Patents by Inventor Yoshihide Tada
Yoshihide Tada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240094585Abstract: According to one embodiment, a display device including a first substrate including a first pixel and a second pixel, a second substrate, a liquid crystal layer containing polymer and liquid crystal molecules, and a light emitting element, wherein the second pixel is located between the light emitting element and the first pixel, the first substrate includes a switching element including a semiconductor layer arranged in the first pixel, a pixel electrode, and a first light shielding portion arranged in the second pixel and being adjacent to the semiconductor layer, the first light shielding portion is located between the semiconductor layer and the light emitting element in planar view and located on a side closer to the first pixel than a center of the second pixel.Type: ApplicationFiled: November 22, 2023Publication date: March 21, 2024Inventors: Kentaro OKUYAMA, Yoshihide OHUE, Hiroki SUGIYAMA, Tomoyuki TADA
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Patent number: 11934057Abstract: According to one embodiment, a display device includes a first substrate, a second substrate, a liquid crystal layer including polymers and liquid crystal molecules, and a light-emitting element. The first substrate includes a transparent substrate, a scanning line, a signal line crossing the scanning line, a switching element electrically connected to the scanning line and the signal line, an organic insulating film overlapping the switching element, and a pixel electrode electrically connected to the switching element. A thickness of the organic insulating film located between the transparent substrate and the pixel electrode is less than a thickness of the organic insulating film overlapping the switching element.Type: GrantFiled: December 12, 2022Date of Patent: March 19, 2024Assignee: Japan Display Inc.Inventors: Kentaro Okuyama, Yoshihide Ohue, Hiroki Sugiyama, Tomoyuki Tada
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Patent number: 8021987Abstract: An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.Type: GrantFiled: December 7, 2009Date of Patent: September 20, 2011Assignee: Tokyo Electron LimitedInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki, Seiji Matsuyama, Kazuhide Hasebe, Shigeru Nakajima, Tomonori Fujiwara
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Publication number: 20100105215Abstract: An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.Type: ApplicationFiled: December 7, 2009Publication date: April 29, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Takuya SUGAWARA, Yoshihide TADA, Genji NAKAMURA, Shigenori OZAKI, Toshio NAKANISHI, Masaru SASAKI, Seiji MATSUYAMA, Kazuhide HASEBE, Shigeru NAKAJIMA, Tomonori FUJIWARA
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Publication number: 20100096707Abstract: In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.Type: ApplicationFiled: December 28, 2009Publication date: April 22, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki, Seiji Matsuyama
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Patent number: 7662236Abstract: In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.Type: GrantFiled: June 25, 2008Date of Patent: February 16, 2010Assignee: Tokyo Electron LimitedInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki, Seiji Matsuyama
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Patent number: 7655574Abstract: An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.Type: GrantFiled: November 30, 2005Date of Patent: February 2, 2010Assignee: Tokyo Electron LimitedInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki, Seiji Matsuyama, Kazuhide Hasebe, Shigeru Nakajima, Tomonori Fujiwara
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Patent number: 7622402Abstract: The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.Type: GrantFiled: March 31, 2003Date of Patent: November 24, 2009Assignee: Tokyo Electron LimitedInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki, Seiji Matsuyama, Kazuhide Hasebe, Shigeru Nakajima, Tomonori Fujiwara
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Publication number: 20080274370Abstract: In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.Type: ApplicationFiled: June 25, 2008Publication date: November 6, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki, Seiji Matsuyama
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Patent number: 7446052Abstract: In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.Type: GrantFiled: March 31, 2003Date of Patent: November 4, 2008Assignee: Tokyo Electron LimitedInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasakii, Seiji Matsuyama
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Publication number: 20070224837Abstract: A process for producing electronic device (for example, high-performance MOS-type semiconductor device) structure having a good electric characteristic, wherein an SiO2 film or SiON film is used as an insulating film having an extremely thin (2.5 nm or less, for example) film thickness, and poly-silicon, amorphous-silicon, or SiGe is used as an electrode. In the presence of process gas comprising oxygen and an inert gas, plasma including oxygen and the inert gas (or plasma comprising nitrogen and an inert gas, or plasma comprising nitrogen, an inert gas and hydrogen) is generated by irradiating a wafer W including Si as a main component with microwave via a plane antenna member SPA. An oxide film (or oxynitride film) is formed on the wafer surface by using the thus generated plasma, and as desired, an electrode of poly-silicon, amorphous-silicon, or SiGe is formed, to thereby form an electronic device structure.Type: ApplicationFiled: January 26, 2007Publication date: September 27, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Takuya Sugawara, Toshio Nakanishi, Shigenori Ozaki, Seiji Matsuyama, Shigemi Murakawa, Yoshihide Tada
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Publication number: 20070218687Abstract: A process for producing an electronic device material of a high quality MOS-type semiconductor comprising an insulating layer and a semiconductor layer excellent in the electrical characteristic. The process includes: a step of CVD-treating a substrate to be processed comprising single-crystal silicon as a main component, to thereby form an insulating layer; and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots, to thereby modify the insulating film by using the thus generated plasma.Type: ApplicationFiled: May 9, 2007Publication date: September 20, 2007Applicant: Tokyo Electron LimitedInventors: Takuya Sugawara, Toshio Nakanishi, Shigenori Ozaki, Seiji Matsuyama, Shigemi Murakawa, Yoshihide Tada
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Patent number: 7217659Abstract: A process for producing an electronic device material of a high quality MOS-type semiconductor having an insulating layer and a semiconducting layer. The process includes a step of CVD-treating a substrate to be processed having single-crystal silicon as a main component to thereby form an insulating layer, and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots to thereby modify the insulating film by using the thus generated plasma.Type: GrantFiled: March 2, 2005Date of Patent: May 15, 2007Assignee: Tokyo Electron LimitedInventors: Takuya Sugawara, Toshio Nakanishi, Shigenori Ozaki, Seiji Matsuyama, Shigemi Murakawa, Yoshihide Tada
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Publication number: 20060199398Abstract: An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.Type: ApplicationFiled: November 30, 2005Publication date: September 7, 2006Applicant: TOKYO ELECTRON LIMITEDInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki, Seiji Matsuyama, Kazuhide Hasebe, Shigeru Nakajima, Tomonori Fujiwara
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Publication number: 20050255711Abstract: The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.Type: ApplicationFiled: March 31, 2003Publication date: November 17, 2005Applicant: TOKYO ELECTRON LIMITEDInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shiqenori Ozaki, Toshio Nakanishi, Masaru Sasaki, Seiji Matsuyama, Kazuhide Hasebe, Shigeru Nakajima, Tomonori Fujiwara
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Publication number: 20050233599Abstract: A process for producing electronic device (for example, high-performance MOS-type semiconductor device) structure having a good electric characteristic, wherein an SiO2 film or SiON film is used as an insulating film having an extremely thin (2.5 nm or less, for example) film thickness, and poly-silicon, amorphous-silicon, or SiGe is used as an electrode. In the presence of process gas comprising oxygen and an inert gas, plasma including oxygen and the inert gas (or plasma comprising nitrogen and an inert gas, or plasma comprising nitrogen, an inert gas and hydrogen) it generated by irradiating a wafer W including Si as a main component with microwave via a plane antenna member SPA. An oxide film (or oxynitride film) is formed on the wafer surface by using the thus generated plasma, and as desired, an electrode of poly-silicon, amorphous-silicon, or SiGe is formed, to thereby form an electronic device structure.Type: ApplicationFiled: June 16, 2005Publication date: October 20, 2005Applicants: Tokyo Electron Limited, Makoto ANDOInventors: Takuya Sugawara, Toshio Nakanishi, Shigenori Ozaki, Seiji Matsuyama, Shigemi Murakawa, Yoshihide Tada
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Publication number: 20050227500Abstract: A film is formed on the surface of an electronic device substrate by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits in the presence of a process gas comprising at least a gas containing a film-forming substance and a rare gas. An insulating film capable of forming an electronic device substrate with an insulating film having a good electrical property can be formed.Type: ApplicationFiled: March 31, 2003Publication date: October 13, 2005Applicant: TOKYO ELECTRON LIMITEDInventors: Takuya Sugawara, Yoshihide Tada, Tomohiro Ohta
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Patent number: 6933249Abstract: A manufacturing method for semiconductor devices that can improve uniformity in the surface of a silicon nitride film or a nitride film to be formed and improve production efficiency is provided. A step of forming a first film that is a silicon oxide film or a silicon oxynitride film on a silicon substrate, a step of forming a second film that is a tetrachlorosilane monomolecular layer, and a step of forming a third film that is a silicon nitride monomolecular layer by performing a nitriding process on the second film are included. A silicon nitride film having a predetermined film thickness is formed by repeating the step of forming the second film and the step of forming the third film for a predetermined number of times. In a manufacturing apparatus, a plurality of silicon substrates are arranged on a stair-like wafer boat, and a process gas is supplied toward the upper side of a reaction tube from a process gas supply pipe.Type: GrantFiled: May 31, 2002Date of Patent: August 23, 2005Assignee: Tokyo Electron LimitedInventors: Shin Yokoyama, Anri Nakajima, Yoshihide Tada, Genji Nakamura, Masayuki Imai, Tsukasa Yonekawa
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Publication number: 20050176263Abstract: A process for producing an electronic device material of a high quality MOS-type semiconductor comprising an insulating layer and a semiconductor layer excellent in the electrical characteristic. The process includes: a step of CVD-treating a substrate to be processed comprising single-crystal silicon as a main component, to thereby form an insulating layer; and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots, to thereby modify the insulating film by using the thus generated plasma.Type: ApplicationFiled: March 2, 2005Publication date: August 11, 2005Applicant: Tokyo Electron LimitedInventors: Takuya Sugawara, Toshio Nakanishi, Shigenori Ozaki, Seiji Matsuyama, Shigemi Murakawa, Yoshihide Tada
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Publication number: 20050161434Abstract: In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.Type: ApplicationFiled: March 31, 2003Publication date: July 28, 2005Applicant: TOKYO ELECTRON LIMITEDInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki, Seiji Matsuyama