Abstract: A liquid crystal display element including a first supporting substrate having a first orienting film for controlling liquid crystal molecules so that the molecules in adjacent orienting domains out of a plurality of orienting domains that are formed by dividing one display unit are oriented in directions that make an angle of 180.degree. with each other, a second supporting substrate having a second orienting film, and facing the first supporting substrate for controlling liquid crystal molecules so that the molecules are oriented in directions that make an angle of 90.degree. with the direction of orientation provided by the first orienting film, and setting a pretilt angle given to the molecules by the first orienting film at a value that is equal to or larger than that given to the molecules by the second orienting film. The second supporting substrate has the alignment in both regions in the same direction.

Abstract: By etching, a first groove and a second groove are formed in a silicon substrate. Surfaces of the side walls of these grooves have a surface orientation of (111). The first and second grooves sandwich a silicon thin plate therebetween, which is formed as a part of the silicon substrate. The silicon thin plate is sufficiently thin so as to act as a quantum well. Further, a pair of silicon oxide films acting as tunneling barriers are formed on the surfaces of the side walls of the silicon thin plate, thus forming a double barrier structure. In addition, a pair of polysilicon electrodes are formed and sandwich the double barrier structure. As a result, the structure of a resonance tunneling diode, which utilizes the resonance tunneling effect, is provided. Adding a third electrode to the above structure provides a hot electron transistor.

Abstract: For removing an unnecessary substance on a silicon substrate surface, a temperature of the unnecessary substance on the silicon substrate surface is not less than 750.degree. C. when the unnecessary substance is exposed to a gas including ozone.

Abstract: A polymerization process, comprises a polymerization vessel, a reflux condenser installed outside the polymerization vessel and a pipe connected between the reflux condenser and a wall of the polymerization vessel with an end thereof opening into a gaseous phase region inside the polymerization vessel, for returning the liquid condensate to the polymerization vessel, wherein said end projects from an inner surface of the wall of the polymerization vessel into the gaseous phase region. In polymerizing a monomer having an ethylenically unsaturated double bond using the polymerization apparatus, the quantity of heat removed by the reflux condenser is increased stepwise or continuously with progress of the polymerization, such that not less than 20% of the total reaction heat generated during the whole course of the polymerization is removed by the reflux condenser. With 100 or more repeated polymerization runs, polymer scale deposition inside the vessel is minimal even below the pipe end.

Abstract: A quantum device including a plate-like conductor part having a necking portion made by forming a first mask layer having a first strip portion on a conductor substrate; forming a second mask layer having a second strip portion on the conductor substrate; etching a region of the conductor substrate which is not covered with the first and second mask layers, by using the first and second mask layers as an etching mask, to form a plurality of first recess portions on a surface of the conductor substrate; selectively covering side faces of the plurality of first recess portions, and side faces of the first and second mask layers with a side wall film; selectively removing only the second mask layer; etching another region of the conductor substrate which is not covered with the first mask layer and the side wall film, by using the first mask layer and the side wall film as an etching mask, to form a plurality of second recess portions on the surface of the conductor substrate; selectively removing part of anothe

Abstract: A method is disclosed of forming semiconductor hetero interfaces that will contribute to the performance improvement of devices having semiconductor hetero interfaces such as MOS transistors, quantum devices, capacitors and the like. The method comprises the steps of making the surface of a semiconductor substrate clean and flat in terms of atomic level by heating said semiconductor substrate in vacuum to a temperature at which reconstruction of the surface atoms of said semiconductor substrate takes place, then forming a structural buffer layer such as a native oxide layer and the like on said semiconductor substrate surface after the temperature of said semiconductor substrate was lowered to room temperature and finally subjecting the semiconductor substrate with said structural buffer layer formed on its surface to a thermal treatment performed in certain specified temperature and atmosphere.

Abstract: A silicon substrate comprises, at least two surfaces extending substantially along respective crystal faces of (111) crystal orientation of the silicon, the crystal faces of (111) crystal orientation crossing with each other, an electrically insulating layer formed by oxidizing the silicon substrate from the surfaces, and an electrically conductive portion insulated electrically by the electrically insulating layer from an outside of the silicon substrate.

Abstract: A resonant electron transfer device includes a plurality of units each of which has of at least one one-dimensional quantum wire having a quantum well elongated in a direction, a zero-dimensional quantum dot having a base quantization level higher than that of the one-dimensional quantum wire an electrode for controlling respective internal levels of the quantum wire and dot wherein the quantum wire and dot forming one unit is connected via a potential barrier capable of exhibiting a tunnel effect therebetween.

Abstract: A quantum wire is formed at the top of triangular protrusion of silicon substrate. A quantum wire is isolated from the substrate by silicon oxide layers. A quantum wire is isolated from the substrate by impurity layers of a conduction type different from that of the substrate. An insulator film and a gate electrode are formed at the edge of triangular protrusion of a silicon substrate, and a quantum wire is induced by applying a voltage to the gate electrode. A quantum wire structure is fabricated by forming saw-tooth-like protrusions having (111) side planes by performing anisotropic crystalline etching and by oxidizing the silicon substrate with use of the oxide protection film to remain only around the top of the protrusions unoxidized. In another method, an oxide film is formed except around the top of the protrusions whereby a quantum wire is formed at the unoxidized region. In a different method, impurity layers are formed except around the top of the protrusions by ion implantation.

Abstract: A color LCD panel includes a lower substrate, an upper substrate and a liquid crystal which is sealed between the lower substrate and the upper substrate. A plurality of pixels are provided on the lower substrate so as to form a matrix of a plurality of rows and columns. Each pixel includes a substantially rectangular pixel electrode. A plurality of scan driver lines are provided on the lower substrate in the rows in the matrix. Each scan driver line extends in parallel to shorter sides of the rectangular pixel electrodes of the pixels. A plurality of data driver lines of a transparent conductor are formed in the columns in the matrix. Each data driver line extends in parallel to the longer sides of the pixel electrodes of the pixels.

Abstract: The method of fabricating a quantum device of the invention includes the steps of: forming a quantum dot having side faces on a first insulating layer; forming a second insulating layer which can function as a tunnel film, on at least the side faces of the quantum dot; depositing a non-crystal semiconductor layer on the first insulating layer so as to cover the quantum dot; removing at least a portion of the non-crystal semiconductor layer which is positioned above the quantum dot; single-crystallizing a predetermined portion of the non-crystal semiconductor layer which is in contact with the second insulating layer; and forming a quantum wire which includes the single-crystallized semiconductor portion and the quantum dot, on the first insulating layer.

Abstract: In the case of manufacturing a dynamic memory of 256 MGbits or more according to a batch transfer process using a beam of electrons or a beam of charged particles, although the central resist pattern does not suffer from the insufficient exposure due to contribution of backscattered electrons from the surroundings to the resist exposure, but the peripheral resist pattern suffers from the insufficient exposure due to the proximity effect resulting from reduced backscattering of electrons during the exposure process. To cope with this, aperture portions of a mask for the peripheral resist pattern are corrected beforehand so as to make correction for the proximity effect of electrons on the peripheral resist pattern.

Abstract: In thin film two terminal element type active matrix liquid crystal displays obtained by holding liquid crystal between a substrate on which is formed a transparent electrode and a substrate on which is formed in matrix form thin film two terminal elements having a metal-insulator-metal structure using a silicon nitride film as the insulator, the active matrix liquid crystal display characterized in that an impurity-doped silicon nitride layer or a silicon carbide layer is inserted between the metal and the insulator.

Abstract: A liquid crystal display includes liquid crystal display pixels, thin film diodes that are connected respectively to the liquid crystal display pixels, a plurality of rows of scan lines connected to the liquid crystal display pixels, data lines connected to the liquid crystal display pixels via the thin film diodes, and means for supplying a signal voltage, between the scan line and the data line, that changes its polarity for each frame, and has an absolute value that is different for different polarity. By varying the absolute value of the signal voltage that is applied between the scan line and the data line corresponding to different polarity, the asymmetry that exists in the thin film diode can be compensated.

Abstract: A liquid crystal display comprises a plurality of first parallel electrodes arranged on a first plane, and a plurality of second parallel electrodes extending in a direction normal to the first parallel electrodes and arranged on a second plane spaced from the first plane. Between the first and second plane is a layer of twisted nematic liquid crystal. A matrix array of pixel electrodes are respectively arranged on the first plane at intersections of the first and second parallel electrodes. A matrix array of switching elements are associated respectively with the pixel electrodes. The switching elements are subdivided into groups which are associated respectively with the first parallel electrodes. Each switching element comprises a plurality of metal-insulator-metal laminated structures with the insulator having a nonlinear resistance characteristic.

Abstract: A liquid crystal display device includes first board having a reference voltage electrode on one surface, a second board having, on a main surface, a lattice of conductive stripes, a plurality of pairs of a transistor and a picture element electrode, each pair being disposed at each crossing point of the conductive stripes and the transistors being thin film transistors using polycrystalline or amorphous silicon, and a driving circuit for driving the conductive stripes, the driving circuit being formed in a monocrystalline silicon in a form of semiconductor integrated circuit directly connected to the conductive stripes, and a liquid crystal interposed between the one surface of the first board and the main surface of the second board.

Abstract: In a matrix-type liquid crystal display driven by a driver, a scan decoder has a first number of input terminals connected to the driver and a second number of output terminals connected to scan electrodes, respectively, with the first number substantially logarithmically related to the second number. Preferably, a data decoder has a third number of input terminals connected to the driver and a fourth number of output terminals connected to data electrodes, respectively, with the third number rendered substantially equal to four times a square root of the fourth number. For the scan decoder, the driver delivers a bipolar source voltage to one of the input terminals and negative-logic and positive-logic voltages to other input terminals to make the output terminals supply a bipolar output voltage to the scan electrodes in a prescribed order.

Abstract: Between a display electrode and a counter electrode, an all-solid-state organic electrochromic display device comprises a polymer layer comprising at least one organic electrochromic material and at lest one ionic material. The layer may be a polymer film of at least one polymer material in which film the electrochromic and the ionic materials are dispersed, a polymer electrochromic film comprising the electrochromic material in which film the ionic material is dispersed, a polymer ionic film comprising the ionic material in which film the electrochromic material is dispersed, or a polymer electrochromic and ionic film comprising the electrochromic and the ionic materials. Between the electrochromic layer and the counter electrode, the device may comprise a polymer redox layer which is similar in structure to the electrochromic layer and preferably comprises at least one ionic material.