Abstract: A semiconductor acceleration sensor device has an acceleration sensor chip and a hollow package to house the acceleration sensor chip. A concave section is formed in a predetermined area on a bottom face inside the package. The semiconductor acceleration sensor device also has a low elasticity element with adhesiveness. The low elasticity element is filled in the concave section. The acceleration sensor chip is mounted on the low elasticity element. The adhesive surface between the low elasticity element and the acceleration sensor chip is higher than the bottom face.

Abstract: An acceleration sensor has a semiconductor acceleration sensor chip and a case. The semiconductor acceleration sensor chip has a fixed portion, a plummet portion surrounding the fixed portion without contacting the fixed portion, and a beam portion connecting the fixed portion and the plummet portion, the thickness of the beam portion being thinner than the thickness of the fixed portion. The case has a cavity housing the semiconductor acceleration sensor chip, and a projection portion formed on the bottom face of the cavity, the bottom face of the fixed portion being fixed to the top face of the projection portion.

Abstract: A manufacturing method of a semiconductor device includes a support member for fixing a semiconductor chip, the support member being formed between leads without applying stress to the leads. The semiconductor device includes a plurality of leads composing a lead frame, a resin island (a support member) that is formed between the leads, a semiconductor chip that is fixed on the resin island and is electrically connected to the leads by bonding wires, and sealing resin for partially sealing the semiconductor chip, the bonding wire, and the lead by resin, wherein a liquid cured resin is formed (filled) between the leads to form the resin island (the support member).

Abstract: A lid for sealing a ceramic container receiving a semiconductor device such as an acceleration sensor is provided. The lid has an electrodeposition coating layer having a thickness of approximately 10 ?m, which is formed by plating the outer surface of the 42 alloy plate having a thickness of approximately 100 ?m with chrome and by forming a black color compound at the chrome plating layer. The lid is fixed to the upper end of a sidewall part of the ceramic container by means of a thermosetting resin. The thickness of the thermosetting resin after thermosetting is adjusted to be approximately 20 to 30 ?m. The conventional ceramic lid needs 200 ?m or more in thickness in view of strength, and has difficulty in laser processing. The lid of the present invention allows decreasing the thickness by half, and facilitating the imprint by laser.

Abstract: To provide a manufacturing method of a semiconductor device, in which a support member for fixing a semiconductor chip is formed between leads without giving stress to the leads. The semiconductor device may comprise a plurality of leads composing a lead frame, a resin island (a support member) that is formed between the leads, and a semiconductor chip that is fixed on the resin island and is electrically connected to the leads by bonding wires, and sealing resin for partially sealing the semiconductor chip, the bonding wire, and the lead by resin, wherein a liquid cured resin is formed (filled) between the leads to form the resin island (the support member).

Abstract: A method of making a semiconductor device comprises the steps of coating a first face of an insulative board (1) with a thermally plastic resin (2), bonding at least one semiconductor element (3) onto the thermally plastic resin (2), piercing the thermally plastic resin (2) and the insulative board (1) with at least one capillary that holds a metal wire (4), forming a metal ball (4b) and pulling out the capillary from the insulative board (1) and the thermally plastic resin (2), pressing the capillary onto an electrode (3a) of the semiconductor element (3) and cutting off an extra wire, and attaching at least one metal bump (6) to the second face of the insulative board (1) so as to be connected to the metal ball (4a).

Abstract: A method of making a semiconductor device comprises the steps of coating a first face of an insulative board (1) with a thermally plastic resin (2), bonding at least one semiconductor element (3) onto the thermally plastic resin (2), piercing the thermally plastic resin (2) and the insulative board (1) with at least one capillary that holds a metal wire (4), forming a metal ball (4b) and pulling out the capillary from the insulative board (1) and the thermally plastic resin (2), pressing the capillary onto an electrode (3a) of the semiconductor element (3) and cutting off an extra wire, and attaching at least one metal bump (6) to the second face of the insulative board (1) so as to be connected to the metal ball (4a).

Abstract: A semiconductor device comprises an insulative board (1), a thermally plastic resin (2) coated on the insulative board (1), a semiconductor element (3) secured by the thermally plastic resin (2) and having an electrode (3a), at least one metal wire (4) extending through the thermally plastic resin (2) and the insulative board (1) and having an end (4a) connected to the electrode (3a) and, at the other end, a metal ball (4b) embedded in the insulative board (1), an enveloping resin (5) for covering the metal wire (4), and at least one metal bump (6) connected to the metal ball (4b).

Abstract: A semiconductor device comprises an insulative board (1), a thermally plastic resin (2) coated on the insulative board (1), a semiconductor element (3) secured by the thermally plastic resin (2) and having an electrode (3a), at least one metal wire (4) extending through the thermally plastic resin (2) and the insulative board (1) and having an end (4a) connected to the electrode (3a) and, at the other end, a metal ball (4b) embedded in the insulative board (1), an enveloping resin (5) for covering the metal wire (4), and at least one metal bump (6) connected to the metal ball (4b).