Abstract: A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; a second electrode layer contacting the dielectric film without contacting the metal foil; and an insulating member provided on the upper surface of the metal foil to surround the first and second electrode layers. The metal foil has an outer peripheral area which is positioned outside an area surrounded by the insulating member and which is not covered with the first and second electrode layers. A height of the electrode layer is equal to or higher than a height of the insulating member. This makes the outer peripheral portion of the thin film capacitor have a step-like shape.

Abstract: To provide a thin film capacitor in which peeling-off of an electrode layer is less likely to occur. A thin film capacitor includes a metal foil having a roughened upper surface, a dielectric film covering the upper surface of the metal foil and having an opening for partly exposing the metal foil therethrough, a first electrode layer contacting the metal foil through the opening and further contacting the dielectric film, and a second electrode layer contacting the dielectric film without contacting the metal foil. With this configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, the first electrode layer contacts not only the metal foil but also the dielectric film, making peeling of the first electrode layer less likely to occur.

Abstract: To provide a thin film capacitor in which warpage is less likely to occur. A thin film capacitor includes: a metal foil having roughened upper and lower surfaces; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a dielectric film covering the lower surface of the metal foil and made of a dielectric material having a thermal expansion coefficient smaller than that of the metal foil; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the first dielectric film without contacting the metal foil. The lower surface of the metal foil is thus covered with the dielectric film having a small thermal expansion coefficient, thereby making it possible to prevent the occurrence of warpage.

Abstract: A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; a second electrode layer contacting the dielectric film without contacting the metal foil; and an insulating member separating the first and second electrode layers. The insulating member has a tapered shape in cross section. With the above configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, since the insulating member has a tapered shape in cross section, adhesion performance of the insulating member can be enhanced, thus making it possible to prevent short-circuit between the first and second electrode layers.

Abstract: To provide a thin film capacitor having high adhesion with respect to a circuit substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. An angle ?a formed by the other main surface of the metal foil and a side surface thereof is more than 20° and less than 80°. The side surface is thus tapered at an angle of more than 20° and less than 80°, so that it is possible to suppress warpage and to enhance adhesion with respect to a multilayer substrate when the thin film capacitor is embedded in the multilayer substrate.

Abstract: To provide a thin film capacitor having high flexibility. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. The particle diameter of crystal at a non-roughened center part of the metal foil is less than 15 ?m in the planar direction and less than 5 ?m in the thickness direction. This can not only enhance the flexibility of the metal foil to reduce a short-circuit failure in a state where the thin film capacitor is incorporated in a multilayer substrate but also enhance positional accuracy.

Abstract: To provide a thin film capacitor in which a pair of terminal electrodes can be disposed on the same plane. A thin film capacitor includes a metal foil having a roughened upper surface, a dielectric film covering the upper surface of the metal foil and having an opening for partly exposing the metal foil therethrough, a first electrode layer contacting the metal foil through the opening, and a second electrode layer contacting the dielectric film without contacting the metal foil. With this configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, since the metal foil is surface-roughened, a larger capacitance can be obtained.

Abstract: To provide a thin film capacitor having high adhesion performance with respect to a multilayer substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. A height of the first electrode layer is lower than a height of the second electrode layer. This enhances adhesion performance when the thin film capacitor is embedded in a multilayer substrate and improves ESR characteristics.

Abstract: To provide a thin film capacitor having high adhesion performance with respect to a circuit substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. The first and second electrode layers are formed in an area surrounded by an outer peripheral area of the upper surface of the metal foil so as not to cover the outer peripheral area. The outer peripheral area of the roughened upper surface of the metal foil is thus exposed, so that adhesion performance with respect to a circuit substrate can be enhanced.

Abstract: A dielectric thin film element including a first electrode layer, a dielectric layer, and a second electrode layer located in this order from a substrate side. A relationship of 0.75?Rsk1?5.0 is satisfied, in which skewness of a roughness curve of the first electrode layer on the dielectric layer side is set as Rsk1.

Abstract: In a thin film capacitor, a first electrode layer 1 has one or more regions B in which a distance Hb between a boundary surface I of the first electrode layer 1 and a dielectric layer 2, and a surface of the first electrode layer 1, becomes maximum, and an outer layer 12 has one or more regions T in which a distance Ht between the boundary surface I and a surface of the outer layer 12 becomes maximum, as well as one or more regions t in which the distance Ht between the boundary surface I and the surface of the outer layer 12 does not become maximum. A projected area SHb, a projected area SHt, and a projected area S, satisfy equations (1) and (2): 60%?(SHb/S)??(1); 60%?(SHt/S)??(2).

Abstract: A stacked film is a stacked film including an oxide film, and a metal film provided on the oxide film, in which the oxide film includes a ZrO2 film of which a main surface is a (001) plane, the metal film includes a Pt film or a Pd film that has a single orientation and of which a main surface is a (001) plane, and a [100] axis of the ZrO2 film and a [100] axis of the metal film are parallel to an interface between the oxide film and the metal film, and the axes of both are parallel to each other.

Abstract: A thin-film capacitor includes a pair of electrode layers composed of a first electrode layer configured to store positive charges and a second electrode layer configured to store negative charges; and a dielectric layer sandwiched between the pair of electrode layers along a lamination direction. The first electrode layer includes a first main electrode layer in contact with the dielectric layer. The second electrode layer includes a second main electrode layer and a second sub-electrode layer, both of which are formed of different metallic materials. The second sub-electrode layer is sandwiched between the dielectric layer and the second main electrode layer along the lamination direction. The second main electrode layer is formed of a material having a melting point lower than both a melting point of a material of the first electrode layer, or the first main electrode layer, and that of a material of the second sub-electrode layer.

Abstract: The electronic device sheet comprises a pair of electrode layers, a dielectric layer provided between the pair of electrode layers, and one or more insulation patch members provided on one of principal surfaces of the dielectric layer, wherein the number of the insulation patch members is 1 or more and 1000 or less per 1 cm2 of the principal surface, and the total area of the insulation patch members is 10 ?m2 or larger and 3 mm2 or smaller per 1 cm2 of the principal surface.

Abstract: A thin-film capacitor includes a pair of electrode layers composed of a first electrode layer configured to store positive charges and a second electrode layer configured to store negative charges; and a dielectric layer sandwiched between the pair of electrode layers along a lamination direction. The first electrode layer includes a first main electrode layer in contact with the dielectric layer. The second electrode layer includes a second main electrode layer and a second sub-electrode layer, both of which are formed of different metallic materials. The second sub-electrode layer is sandwiched between the dielectric layer and the second main electrode layer along the lamination direction. The second main electrode layer is formed of a material having a melting point lower than both a melting point of a material of the first electrode layer, or the first main electrode layer, and that of a material of the second sub-electrode layer.

Abstract: A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer. The columnar crystal has a perovskite crystal structure represented by AyBO3. An element A is at least one of Ba, Ca, Sr, and Pb, and an element B is at least one of Ti, Zr, Sn, and Hf. Further, y?0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Mg per 100 mol of AyBO3.

Abstract: A stacked film is a stacked film including an oxide film, and a metal film provided on the oxide film, in which the oxide film includes a ZrO2 film of which a main surface is a (001) plane, the metal film includes a Pt film or a Pd film that has a single orientation and of which a main surface is a (001) plane, and a [100] axis of the ZrO2 film and a [100] axis of the metal film are parallel to an interface between the oxide film and the metal film, and the axes of both are parallel to each other.

Abstract: A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer, the columnar crystal has a perovskite crystal structure represented by AyBO3, an element A is at least one of Ba, Ca, Sr, and Pb, an element B is at least one of Ti, Zr, Sn, and Hf, y?0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Al per 100 mol of AyBO3.

Abstract: A thin film capacitor includes: a laminated body in which a dielectric layer and an upper electrode layer are successively laminated on a base electrode; a protective layer that covers a part of the base electrode, the dielectric layer and the upper electrode layer and includes a through-hole respectively on the base electrode and on the upper electrode layer; and terminal electrodes that are electrically connected with the base electrode and the upper electrode layer through the through-holes of the protective layer. A modulus of longitudinal elasticity (Young's modulus) of the protective layer is 0.1 GPa to 2.0 GPa.

Abstract: The electronic device sheet comprises a pair of electrode layers, a dielectric layer provided between the pair of electrode layers, and one or more insulation patch members provided on one of principal surfaces of the dielectric layer, wherein the number of the insulation patch members is 1 or more and 1000 or less per 1 cm2 of the principal surface, and the total area of the insulation patch members is 10 ?m2 or larger and 3 mm2 or smaller per 1 cm2 of the principal surface.