Abstract: In a thin film capacitor, a first electrode layer 1 has one or more regions B in which a distance Hb between a boundary surface I of the first electrode layer 1 and a dielectric layer 2, and a surface of the first electrode layer 1, becomes maximum, and an outer layer 12 has one or more regions T in which a distance Ht between the boundary surface I and a surface of the outer layer 12 becomes maximum, as well as one or more regions t in which the distance Ht between the boundary surface I and the surface of the outer layer 12 does not become maximum. A projected area SHb, a projected area SHt, and a projected area S, satisfy equations (1) and (2): 60%?(SHb/S)??(1); 60%?(SHt/S)??(2).

Abstract: A thin film capacitor is provided with a lower electrode layer, a dielectric layer arranged on the lower electrode layer, and an upper electrode layer formed on the dielectric layer. An insulator patch material, circular when projected from above, is formed at a boundary of the dielectric layer and the upper electrode layer of the thin film capacitor of this invention. The circular insulator patch improves a withstand voltage, by reducing accumulation of charges.

Abstract: A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer, the columnar crystal has a perovskite crystal structure represented by AyBO3, an element A is at least one of Ba, Ca, Sr, and Pb, an element B is at least one of Ti, Zr, Sn, and Hf, y?0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Al per 100 mol of AyBO3.

Abstract: A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer. The columnar crystal has a perovskite crystal structure represented by AyBO3. An element A is at least one of Ba, Ca, Sr, and Pb, and an element B is at least one of Ti, Zr, Sn, and Hf. Further, y?0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Mg per 100 mol of AyBO3.

Abstract: A thin film capacitor comprises: a laminated body in which a dielectric layer and an upper electrode layer are successively laminated on a base electrode; a protective layer that covers a part of the base electrode, the dielectric layer and the upper electrode layer and includes a through-hole respectively on the base electrode and on the upper electrode layer; and terminal electrodes that are electrically connected with the base electrode and the upper electrode layer through the through-holes of the protective layer, and a modulus of longitudinal elasticity (Young's modulus) of the protective layer is 0.1 GPa to 2.0 GPa.

Abstract: A thin film capacitor is provided with a lower electrode layer, a dielectric layer arranged on the lower electrode layer, and an upper electrode layer formed on the dielectric layer. An insulator patch material, circular when projected from above, is formed at a boundary of the dielectric layer and the upper electrode layer of the thin film capacitor of this invention. The circular insulator patch improves a withstand voltage, by reducing accumulation of charges.

Abstract: A thin film capacitor includes a lower electrode layer, a dielectric layer that is provided on said lower electrode layer, and an upper electrode layer that is formed on the dielectric layer. Wherein, the lower electrode layer contains at least a Ni electrode layer, the upper electrode layer configured with at least two layers of a Ni electrode layer and a Cu electrode layer, and the dielectric layer is in contact with both the Ni electrode layer of the lower electrode layer and the Ni electrode layer of the upper electrode layer.

Abstract: A thin film capacitor includes two or more of dielectric body layers that are alternately laminated on an under-electrode, and internal electrode layers that are laminated between the dielectric body layers, and are exposed off the dielectric body layer, and a connection electrode that is electrically connected to the internal electrode layers via the exposed portion of the internal electrode layers, A relationship between an average grain size D of crystal grains in the internal electrode layers and an average grain size d of crystal grains in the connection electrode is D>d.

Abstract: A thin film capacitor includes an under electrode, a plurality of dielectric body layers and a plurality of internal electrode layers that are alternately laminated on the under electrode, the internal electrode layers respectively including protrusion parts that each protrude from the dielectric body layers viewed in the lamination direction, and connection electrodes to which at least a portion of each of the protrusion parts contacts. Assuming that protrusion amounts of the protrusion parts of the internal electrode layers that are connected to the same connection electrode are regarded as L, a protrusion amount Ln of a protrusion part of nth (n?2) internal electrode layer from the under electrode side is smaller than another protrusion amount Ln-1 of another protrusion part of (n?1)th internal electrode layer.

Abstract: A thin film capacitor includes a lower electrode layer, a dielectric layer that is provided on said lower electrode layer, and an upper electrode layer that is formed on the dielectric layer. Wherein, the lower electrode layer contains at least a Ni electrode layer, the upper electrode layer configured with at least two layers of a Ni electrode layer and a Cu electrode layer, and the dielectric layer is in contact with both the Ni electrode layer of the lower electrode layer and the Ni electrode layer of the upper electrode layer.

Abstract: To provide a thin-film capacitor capable of improving the stability of electric connection between an internal electrode layer and a connection electrode. The thin-film capacitor comprises: two or more dielectric layers deposited above a base electrode; an internal electrode layer being deposited between the dielectric layers and having a projecting portion which projects from the dielectric layer when seen from a laminating direction; and a connection electrode electrically connected to the internal electrode layer via at least a part of a surface and an end face of the internal electrode layer included in the projecting portion, wherein a ratio L/t between a projection amount L of the projecting portion of the internal electrode layer with respect to the dielectric layer and a thickness t of the internal electrode layer is 0.5 to 120.

Abstract: A thin film capacitor includes two or more of dielectric body layers that are alternately laminated on an under-electrode, and internal electrode layers that are laminated between the dielectric body layers, and are exposed off the dielectric body layer, and a connection electrode that is electrically connected to the internal electrode layers via the exposed portion of the internal electrode layers, A relationship between an average grain size D of crystal grains in the internal electrode layers and an average grain size d of crystal grains in the connection electrode is D>d.

Abstract: A thin film capacitor includes an under electrode, a plurality of dielectric body layers and a plurality of internal electrode layers that are alternately laminated on the under electrode, the internal electrode layers respectively including protrusion parts that each protrude from the dielectric body layers viewed in the lamination direction, and connection electrodes to which at least a portion of each of the protrusion parts contacts. Assuming that protrusion amounts of the protrusion parts of the internal electrode layers that are connected to the same connection electrode are regarded as L, a protrusion amount Ln of a protrusion part of nth (n?2) internal electrode layer from the under electrode side is smaller than another protrusion amount Ln-1 of another protrusion part of (n-1)th internal electrode layer.

Abstract: A thin-film capacitor that is less prone to generation of internal cracking or peeling is provided. In a thin-film capacitor according to the present embodiment, because through holes H are formed in internal electrodes containing Ni as a principal component in a lamination direction, a surface area of at least some of the through holes H is in the range of 0.19 ?m2 to 7.0 ?m2, and a ratio of a surface area of the through holes H to a surface area of an entire main surface of the internal electrodes is in the range of 0.05% to 5%, peeling or cracking is suppressed from occurring at the boundaries between the internal electrodes and dielectric layers, and as a result, the yield is enhanced.

Abstract: An EL element 1 comprises EL functional layers 6, 10 comprising Ga2O3:Eu between a thick film insulator layer 16 and an upper electrode 12 provided on a substrate 2 on which a lower electrode 4 was formed and a light-emitting layer 8 comprising MgGa2O4 formed therebetween. The EL functional layers 6, 10 have the dual functions of insulating layers and electron doping layers. Due to this, the EL element 1 has a low drive voltage and high light-emitting brightness, and the structure of the EL element is simplified.

Abstract: To provide a thin-film capacitor capable of preventing the degradation of electrical characteristics caused by direct contact between an adhesion layer of a terminal electrode and a dielectric layer, to increase the reliability.

Abstract: A method of manufacturing a thin film capacitor, having: a base electrode; dielectric layers consecutively deposited on the base electrode; an internal electrode deposited between the dielectric layers; an upper electrode deposited opposite the base electrode with the dielectric layers and the internal electrode being interposed therebetween; and a cover layer deposited on the upper electrode, has depositing an upper electrode layer which is to be the upper electrode, and a cover film which is to be the cover layer on the unsintered dielectric film which is to be the dielectric layer, to fabricate a lamination component, and sintering the lamination component.

Abstract: A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T1 be the thickness of the lowermost first dielectric layer in contact with the base electrode in the plurality of dielectric layers, and Tmin be the thickness of the thinnest dielectric layer in the plurality of dielectric layers excluding the first dielectric layer, T1>Tmin. Making the first dielectric layer thicker than the thinnest, dielectric layer in the other dielectric layers can increase the distance between a metal part projecting from a metal surface because of the surface roughness of the base electrode and the inner electrode mounted on the lowermost dielectric layer, thereby reducing leakage currents.

Abstract: A thin-film capacitor that is less prone to generation of internal cracking or peeling is provided. In a thin-film capacitor 100 according to the present embodiment, because through holes H are formed in internal electrodes 3, 5, 7, and 9 containing Ni as a principal component in a lamination direction, a surface area of at least some of the through holes H is in the range of 0.19 ?m2 to 7.0 ?m2, and a ratio of a surface area of the through holes H to a surface area of an entire main surface of the internal electrodes 3, 5, 7, and 9 is in the range of 0.05% to 5%, peeling or cracking is suppressed from occurring at the boundaries between the internal electrodes 3, 5, 7, and 9 and dielectric layers 2, 4, 6, 8, and 10, and as a result, the yield is enhanced.

Abstract: To provide a thin-film capacitor capable of preventing the degradation of electrical characteristics caused by direct contact between an adhesion layer of a terminal electrode and a dielectric layer, to increase the reliability.