Abstract: A photoelectric conversion element is disposed in each of a plurality of recesses of a support. Light reflected by the inside surface of the recess shines on the photoelectric conversion element. The photoelectric conversion element has an approximately spherical shape and has the following structure. The outer surface of a center-side n-type amorphous silicon (a-Si) layer is covered with a p-type amorphous SiC (a-SiC) layer having a wider optical band gap than a-Si does, whereby a pn junction is formed. A first conductor of the support is connected to the p-type a-SiC layer of the photoelectric conversion element at the bottom or its neighborhood of the recess. A second conductor, which is insulated from the first conductor by an insulator, of the support is connected to the n-type a-Si layer of the photoelectric conversion element.

Abstract: A photoelectric conversion element is disposed in each of a plurality of recesses of a support. Light reflected by the inside surface of the recess shines on the photoelectric conversion element. The photoelectric conversion element has an approximately spherical shape and has the following structure. The outer surface of a center-side n-type amorphous silicon (a-Si) layer is covered with a p-type amorphous SiC (a-SiC) layer having a wider optical band gap than a-Si does, whereby a pn junction is formed. A first conductor of the support is connected to the p-type a-SiC layer of the photoelectric conversion element at the bottom or its neighborhood of the recess. A second conductor, which is insulated from the first conductor by an insulator, of the support is connected to the n-type a-Si layer of the photoelectric conversion element.

Abstract: There is provided a magnetoresistive head which is capable of suppressing the fluctuation of read output while ensuring a sufficient dielectric breakdown voltage of the shielding portions by constituting the shielding portions with a Co-based material. Namely, the lower shield film is formed of a 2-ply composite film wherein the film (12′) of the lower shield film which is disposed contacting with the lower gap insulation film (13) is constituted by an amorphous soft magnetic film, while the film (12) which is disposed away from the lower gap insulation film is constituted by a crystalline soft magnetic film, thereby making it possible to suppress the fluctuation of read output even if the gap is narrowed without deteriorating the yield relative to the dielectric breakdown.

Abstract: A photoelectric conversion element is disposed in each of a plurality of recesses of a support. Light reflected by the inside surface of the recess shines on the photoelectric conversion element. The photoelectric conversion element has an approximately spherical shape and has the following structure. The outer surface of a center-side n-type amorphous silicon (a-Si) layer is covered with a p-type amorphous SiC (a-SiC) layer having a wider optical band gap than a-Si does, whereby a pn junction is formed. A first conductor of the support is connected to the p-type a-SiC layer of the photoelectric conversion element at the bottom or its neighborhood of the recess. A second conductor, which is insulated from the first conductor by an insulator, of the support is connected to the n-type a-Si layer of the photoelectric conversion element.

Abstract: A magnetic head is provided with a magnetoresistive sensor scarcely susceptible to heat and provided with a fixed layer capable of creating a pinned magnetic field of a sufficient intensity. The magnetic head comprises a magnetoresistive effect film having a free layer (21), a fixed layer (105) and an intermediate layer (104), and a pair of electrodes (25a, 25b) for supplying current to the magnetoresistance effect film. The free layer (21) is formed of a ferromagnetic material and the intermediate layer (104) is formed of a nonmagnetic material. The fixed layer (105) has a first ferromagnetic film (22), a second ferromagnetic film (24) and a nonmagnetic film (23) sandwiched between the first and the second ferromagnetic films (22, 24). The second ferromagnetic film (24) farther from the free layer (21) than the first ferromagnetic layer (22) is formed of a material having the property of permanent magnets.

Abstract: A magnetic head of storage/read separation type in which both a reproducing head of magnetoresistive type and a write head of magnetic induction type are formed through a magnetic shield. The magnetic head includes a ferromagnetic material and an antiferromagnetic material in intimate contact with said ferromagnetic material. At least a part of the antiferromagnetic material acts to bring about unidirectional anisotropy in the ferromagnetic material, and is made of Cr--Mn-based alloy, and at least a part of the ferromagnetic material in intimate contact with the antiferromagnetic material is made of Co or Co-based alloy.

Abstract: A solid state image sensing device having a semiconductor substrate, a first diffusion region of a positive or negative conductive type provided on the semiconductor substrate, a plurality of second diffusion regions each of which is an opposite conductive type relative to the first diffusion region and is provided in the first diffusion region, and a semiconductor thin layer provided on at least the second diffusion regions.

Abstract: A solid state image sensing device having a semiconductor substrate, a first diffusion region of a positive or negative conductive type provided on the semiconductor substrate, a plurality of second diffusion regions each of which is an opposite conductive type relative to the first diffusion region and is provided in the first diffusion region, and a semiconductor thin layer provided on at least the second diffusion regions.

Abstract: A ferromagnetic and antiferromagnetic material having a high exchange coupling and a high thermal stability, and a magnetic storage system using this material which has excellent reliability and recording density, and a magnetoresistive storage/read separation head having a high sensitivity and a low noise property. The magnetic storage/read system of the invention mounts a magnetoresistive head using a chromium-manganese antiferromagnetic layer/a cobalt alloy layer as a pinning layer or the longitudinal bias layer of the spin-valve type magnetoresistive layered film.

Abstract: In an inductive-write, magnetoresistive-read type magnetic head having a magnetoresistive read head and an inductive write head superimposed on each other, the magnetic center of the read head is made more coincident with the physical center of the write head by a changing of a magnetization direction of a magnetoresistive element. The recording/reproducing apparatus using this magnetic head can thus have a good S/N ratio even if the track width is narrow.

Abstract: A high performance thin film semiconductor device having a heterojunction such as a photoelectric conversion device is disclosed. In accordance with the present invention, the thin film semiconductor device comprises a thin semiconductor layer which forms a heterojunction with a non-single crystal silicon layer or non-single crystal silicon-germanium layer, wherein the valence band discontinuity at the heterointerface arising from the difference in optical energy bandgap is as small as 0.3 eV or less and wherein the thin semiconductor layer has an optical energy bandgap greater than 2.8 eV, so that hole transport performance may not be degraded. Such a thin semiconductor layer may be formed by using silane gas and methane gas with a flow rate ratio greater than 30 at a deposition rate less than 0.5 .ANG./sec.

Abstract: A magnetoresistive read head includes a magnetoresistive layer having a central active region and end domain control regions, an electrode layer connected to both ends of the magnetoresistive layer, a pattern for providing a transverse bias to the magnetoresistive layer, a soft magnetic film provided on both sides of the magnetoresistive layer for magnetically shielding the magnetoresistive layer, and a substrate for supporting the magnetoresistive layer, pattern and soft magnetic film. A distance between the two end domain control regions of the magnetoresistive layer indicative of a length of the central active region is smaller than a distance between inner end faces of the electrode layer and the distance between the inner end faces of the magnetoresistive substantially corresponds to a read track width.

Abstract: A flexible photovoltaic device includes a flexible substrate and a photovoltaic device body. The flexible substrate is a metal foil or film provided with an electric insulating layer of a material having an electric conductivity of not more than 10.sup.-7 (.OMEGA..cm.).sup.-1 at the time of light impinging and selected from a heat resistant polymer, a metal oxide, a crystalline or amorphous silicon compound and an organometallic compound.

Abstract: A separation type optical head according to the present invention includes at least a light source portion for emitting collimated beams, a focusing device (a focusing lens) for focusing the collimated beams onto an information recording surface of an optical disc medium, a focal point control mechanism for the position of the spot on the information recording surface, and a photo-detection portion for receiving beams reflected by the information recording surface. The structure is divided into a fixed portion including the light source portion and the photo-detection portion and a movable portion including the focusing device (focusing lens) and the focal point control mechanism. At least the movable portion of the separation type optical head is movably accommodated n a frame (sealing case) for the optical head so as to prevent irregular vibrations of the movable portion due to high speed air flows or turbulence.

Abstract: A flexible photovoltaic device includes a flexible substrate and a photovoltaic device body. The flexible substrate is a metal foil or film provided with an electric insulating layer of a material having an electric conductivity of not more than 10.sup.-7 (.OMEGA..multidot.cm.).sup.-1 at the time of light impinging and selected from a heat resistant polymer, a metal oxide, a crystalline or amorphous silicon compound and an organometallic compound.

Abstract: A thin film magnetic head has a first magnetic core member carried by a substrate, a gap layer formed on the first magnetic core member, and a second magnetic core member formed in a spaced relation with the first magnetic core member. The second magnetic core member is coupled to the first magnetic core member to form a magnetic path and to have an end portion of the gap layer sandwiched by gap defining portions of the first and second magnetic core members. A coil conductor is wound about the magnetic path. In one embodiment, the first magnetic core member includes a first magnetic layer made of a magnetic material having stable magnetic properties during heat treatment and the second magnetic core member includes a second magnetic layer made of a material having a saturation flux density higher than that of the material of the first magnetic core member.

Abstract: A microcrystalline silicon-containing silicon carbide semiconductor film has an optical energy gap of not less than 2.0 eV, and a dark electric conductivity of less than 10.sup.-6 Scm.sup.-1. The Raman scattering light of the microcrystalline silicon-containing silicon carbide semiconductor film, which shows the presence of silicon crystal phase, has a peak in the vicinity of 530 cm.sup.-1. This microcrystalline silicon-containing silicon carbide semiconductor film is formed on a substrate by preparing a mixture gas having a hydrogen dilution rate .gamma., which is the ratio of the partial pressure of hydrogen gas to the sum of the partial pressure of a silicon-containing gas and the partial pressure of a carbon-containing gas, of 30, transmitting microwave of a frequency of not less than 100 MHz into the mixture gas near a substrate with an electric power density of not less than 4.4.times.10.sup.-2, and generating plasma at a temperature of the substrate of not less than 200.degree. C.

Abstract: A thin film magnetic head having a first magnetic layer of a saturation magnetic flux density greater than that of a Ni-Fe alloy and a second magnetic layer of a saturation magnetic flux density grater than that of a Ni-Fe alloy supported by a base layer, the magnetic layers for forming a magnetic core of the head with a non-magnetic material gap layer interposed therebetween, and an electrically insulating layer provided between the magnetic layers so that turns of coil wound about the magnetic core are partly formed in electrically insulated relation within the insulating layer, in which a metal film is provided between the first magnetic layer and the electrically insulating layer so that the electrically insulating layer does not contact with the first magnetic layer and/or another metal film is formed on the second magnetic layer so that the other metal layer is sandwiched between the non-magnetic layer and the second magnetic layer.

Abstract: In a thin film magnetic head of the type wherein a lower magnetic pole, a gap layer, a first insulating layer, a coil, a second insulating layer and an upper magnetic pole are formed sequentially on a substrate, the present invention provides a thin film magnetic head characterized in that a surface active layer made of aluminum oxide, for example, is disposed between the first insulating layer and the second insulating layer except where the coil is formed on the first insulating layer so that the surface active layer is disposed between the coil and the second insulating layer. According to the present invention, it is possible to prevent the occurrence of bubbles between coil conductors, and eventually to improve flatness of the surface of the second insulating layer and to prevent degradation of the characteristics of the upper magnetic pole.

Abstract: A flexible photovoltaic device includes a flexible substrate and a photovoltaic device body. The flexible substrate is a metal foil or film provided with an electric insulating layer of a material having an electric conductivity of not more than 10.sup.-7 (.OMEGA..multidot.cm.).sup.-1 at the time of light impinging and selected from a heat resistant polymer, a metal oxide, a crystalline or amorphous silicon compound and an organometallic compound.