Abstract: A photovoltaic cell having a hetero junction of amorphous silicon and amorphous silicon carbide has at least one of its p and n layers composed of amorphous silicon carbide of the general formula a-Si.sub.1-x C.sub.x obtained by glow discharge decomposition of a mixture of at least one gas selected from among silane, silicon fluoride and the derivatives thereof, and at least one gas selected from among hydrocarbons, alkylsilanes, the fluorides thereof and the derivatives thereof.

Abstract: A photovoltaic cell having a hetero junction of amorphous silicon and amorphous silicon carbide has at least one of its p and n layers composed of amorphous silicon carbide of the general formula a-Si.sub.1-x C.sub.x obtained by glow discharge decomposition of a mixture of at least one gas selected from among silane, silicon fluoride and the derivatives thereof, and at least one gas selected from among hydrocarbons, alkylsilanes, the fluorides thereof and the derivatives thereof.

Abstract: A photovoltaic device including a plurality of amorphous silicon unit cells each having a p-i-n structure layered in succession on a substrate made of stainless steel. A transparent electrically conductive layer, for withdrawing a photoelectromotive force in cooperation with the electrically conductive substrate, is formed on the uppermost unit cell, so that rays of light may be incident upon the photovoltaic device from the uppermost unit cell. Preferably, the thickness of the unit cells closer to the light incidence surface is selected to be less than the thickness of the unit cells farther from the light incident surface. Each of the unit cells is structured such that the n type, i type and p type layers are disposed in the above described order from the light incidence surface in terms of the impurity type.