Abstract: Provided is a polishing composition capable of polishing a layer containing an element in group 13 of the periodic table in a content of 40 mass % or more at a high polishing speed while reducing surface defects due to polishing. Provided is a polishing composition for use in polishing an object to be polished having a layer containing an element in group 13 of the periodic table in a content of 40 mass % or more, the polishing composition containing a cationically modified silica, a trialkylamine oxide, and an oxidizing agent, wherein the content of the trialkylamine oxide is 3 mass ppm or more and 40 mass ppm or less with respect to the total mass of the polishing composition, and the pH is less than 5.

Abstract: A polishing method according to the present invention, includes polishing a polishing object containing a silicon material by using a polishing composition containing abrasive grains, a tri- or more polyvalent hydroxy compound and a dispersing medium and having pH of less than 6.0.

Abstract: A cosmetic treatment device includes a treatment surface that faces a human body, at least three head portions, and an oscillation portion. The head portions are arranged at a spacing with each other on the treatment surface, each head portion including an ultrasonic vibrator and being configured to vibrate together with the ultrasonic vibrator. The oscillation portion is configured to cause the ultrasonic vibrators to vibrate.

Abstract: A polishing method according to the present invention, includes polishing a polishing object containing a silicon material by using a polishing composition containing abrasive grains, a tri- or more polyvalent hydroxy compound and a dispersing medium and having pH of less than 6.0.

Abstract: Provided is a means capable of sufficiently removing residues remaining on a surface of a polished object. Provided is a composition for surface treatment for use in reducing a residue on a surface of a polished object, containing a solvent and a water-soluble polymer, wherein an adsorption amount of the water-soluble polymer adsorbed to a quartz crystal microbalance electrode is 100 ng/cm2 or more and 600 ng/cm2 or less per unit area of the quartz crystal microbalance electrode.

Abstract: An object of the present invention is to provide a means for reducing the surface roughness (Ra) and suppressing occurrence of scratches while maintaining a high polishing rate in polishing an object to be polished containing a resin. Provided is a polishing composition including particulate alumina and a dispersing medium, in which an ? conversion rate of the particulate alumina is 50% or more, and a sphericity of the particulate alumina is 80% or more.

Abstract: An object of the present invention is to provide a unit capable of improving redispersibility in a concentrated liquid of a polishing composition containing alumina as abrasive grains. There is provided a concentrated liquid of a polishing composition which includes: particulate alumina; colloidal alumina having an aspect ratio of more than 5 and 800 or less; at least one phosphorus-containing acid selected from the group consisting of phosphoric acid, phosphoric acid condensates, organic phosphoric acids, phosphonic acids, and organic phosphonic acids; and water, where a pH of the concentrated liquid of the polishing composition is 2 or more and 4.5 or less.

Abstract: The present invention provides a polishing composition which can polish an object to be polished at a high polishing speed and with fewer scratches (defects). The present invention is a polishing composition containing silica of which a maximum peak height in a weight change rate distribution curve obtained by thermogravimetric measurement in a range of 25° C. or higher and 250° C. or lower is ?0.011 or more and less than 0, a pH at 25° C. of the polishing composition being less than 6.0.

Abstract: A method for producing a polishing composition including: preparing a first dispersion liquid by mixing a dispersing element containing abrasive grains and a dispersing medium with a pH adjusting agent, and changing the pH of the dispersing element so as to pass an isoelectric point of the abrasive grains; and preparing a second dispersion liquid by mixing the first dispersion liquid with an electrical conductivity adjusting agent.

Abstract: The present invention provides a method for producing a polishing composition which can polish an object to be polished at a high polishing speed and with fewer scratches (defects). The present invention is a method for producing a polishing composition, the method including: preparing silica in which an intensity of a peak of a silica four-membered ring structure and an intensity of a peak derived from a silica random network structure when analyzed by Raman spectroscopy satisfy a predetermined requirement; and mixing the silica with a dispersing medium.

Abstract: A polishing composition according to the present invention contains: silica particles; a polishing speed adjusting agent for an object to be polished containing a silicon material having silicon-silicon bonding; and a biocide. The biocide includes a carbon atom, a hydrogen atom, and an oxygen atom.

Abstract: The polishing composition according to the present invention is used to polish an object to be polished having a silicon oxide film, contains an abrasive grain, a compound having a logarithmic value (Log P) of partition coefficient of 1.0 or more, and a dispersing medium, and has a pH of less than 7.

Abstract: The present invention provides a method for producing a polishing composition which can polish an object to be polished at a high polishing speed and with fewer scratches (defects). The present invention is a method for producing a polishing composition, the method including: preparing silica in which an intensity of a peak of a silica four-membered ring structure and an intensity of a peak derived from a silica random network structure when analyzed by Raman spectroscopy satisfy a predetermined requirement; and mixing the silica with a dispersing medium.

Abstract: The present invention provides a polishing composition which polishes an object to be polished at a high polishing speed and with less scratches (defects). The present invention is a polishing composition including silica having a maximum peak temperature of 30° C. or higher and 53° C. or lower in a weight change rate distribution curve obtained by thermogravimetric measurement in a range of 25° C. or higher and 250° C. or lower, and having a pH at 25° C. of less than 6.0.

Abstract: The present invention provides a polishing composition that can polish an object to be polished at a high polishing speed with fewer scratches (defects). The present invention relates to a polishing composition including silica and a dispersing medium, the polishing composition having, when analyzed by pulse NMR spectroscopy, a specific relaxation rate (R2sp) of from 1.60 to 4.20 as determined by the following Formula (1): R2sp=(R(silica))/(R(medium))?1 ??Formula (1): wherein R(silica) represents the reciprocal of the relaxation time of silica (unit:/millisecond), and R(medium) represents the reciprocal of the relaxation time of the dispersing medium (unit:/millisecond).

Abstract: The present invention provides a polishing composition which can polish an object to be polished at a high polishing speed and with fewer scratches (defects). The present invention is a polishing composition containing silica of which a maximum peak height in a weight change rate distribution curve obtained by thermogravimetric measurement in a range of 25° C. or higher and 250° C. or lower is ?0.011 or more and less than 0, a pH at 25° C. of the polishing composition being less than 6.0.

Abstract: A method for producing a polishing composition including: preparing a first dispersion liquid by mixing a dispersing element containing abrasive grains and a dispersing medium with a pH adjusting agent, and changing the pH of the dispersing element so as to pass an isoelectric point of the abrasive grains; and preparing a second dispersion liquid by mixing the first dispersion liquid with an electrical conductivity adjusting agent.

Abstract: A polishing method according to the present invention, includes polishing a polishing object containing a silicon material by using a polishing composition containing abrasive grains, a tri- or more polyvalent hydroxy compound and a dispersing medium and having pH of less than 6.0.

Abstract: The purpose of the present invention is to provide a means to sufficiently remove impurities remaining on the surface of a polishing object after CMP. The polishing composition of the present invention is a polishing composition which is used after polishing has been performed by using a polishing composition (A) including abrasive grains or an organic compound (A), and is characterized by including an organic compound (B) which includes at least one atom selected from the group consisting of a fluorine atom, an oxygen atom, a nitrogen atom, and a chlorine atom and has a molecular weight of 100 or more, a pH adjusting agent, and 0 to 1% by mass of abrasive grains.

Abstract: A polishing composition contains a nitrogen-containing compound and abrasive grains, and the pH of the composition is in the range of 1 to 7. The nitrogen-containing compound in the polishing composition preferably has a structure expressed by a formula: R1—N(—R2)—R3 in which R1, R2, and R3 each represent an alkyl group with or without a characteristic group, two of R1 to R3 may form a part of a heterocycle, and two of R1 to R3 may be identical and form a part of a heterocycle with the remaining one. Alternatively, the nitrogen-containing compound is preferably selected from a group consisting of a carboxybetaine type ampholytic surfactant, a sulfobetaine type ampholytic surfactant, an imidazoline type ampholytic surfactant, and an amine oxide type ampholytic surfactant. A polishing composition may contain a water-soluble polymer and abrasive grains, and the pH of the composition is in the range of 1 to 8.