Abstract: The present invention provides a polishing composition capable of polishing a simple substance of silicon at a higher polishing speed. The present invention is a polishing composition which is used for polishing a polishing object containing a simple substance of silicon and a silicon-containing compound other than the simple substance of silicon, the polishing composition including: abrasive grains; and a dispersing medium, wherein the number of silanol groups per unit surface area of the abrasive grains is more than 0/nm2 but 2.0/nm2 or less.

Abstract: The purpose of the present invention is to provide a means to sufficiently remove impurities remaining on the surface of a polishing object after CMP. The polishing composition of the present invention is a polishing composition which is used after polishing has been performed by using a polishing composition (A) including abrasive grains or an organic compound (A), and is characterized by including an organic compound (B) which includes at least one atom selected from the group consisting of a fluorine atom, an oxygen atom, a nitrogen atom, and a chlorine atom and has a molecular weight of 100 or more, a pH adjusting agent, and 0 to 1% by mass of abrasive grains.

Abstract: A polishing composition is used to polish a polishing subject having a phase change alloy. The polishing composition includes abrasive grains and a brittle film formation agent. The brittle film formation agent is at least one or more selected from a saturated monocarboxylic acid and an organophosphorus compound.

Abstract: The present invention is the invention of a polishing composition comprising a silica in which a functional group satisfying at least one of condition (1) and condition (2) described below is fixed on the surface, and a pH-adjusting agent; condition (1): the functional group has an amino group; and condition (2): the functional group has a halogeno group, and the polishing composition of the invention can sufficiently control a polishing rate of a Si-containing material.

Abstract: A polishing composition contains a water-soluble polymer, a polishing accelerator, and an oxidizing agent. The water-soluble polymer is a polyamide-polyamine polymer having an amine value of 150 mg KOH/1 g·solid or greater.

Abstract: To provide a polishing composition, in which a high polishing rate for a barrier layer and an insulation film can sufficiently be maintained, a polishing rate of a low dielectric material can sufficiently be suppressed, and aggregation of abrasive grains can be prevented. The invention is a polishing composition to be used for an application of polishing a polishing object having a barrier layer, a metal wiring layer, and an insulation film, comprising an oxidizing agent, and a nonionic compound having a weight average molecular weight of 1,000 or less.

Abstract: A polishing composition is used to polish a polishing subject having a phase change alloy. The polishing composition includes abrasive grains and a brittle film formation agent. The brittle film formation agent is at least one or more selected from a saturated monocarboxylic acid and an organophosphorus compound.

Abstract: A polishing composition of the present invention is used for polishing an object containing a phase-change alloy and is characterized by containing ammonium ions (NH4+). The polishing composition may further contain abrasive grains, such as colloidal silica.

Abstract: A polishing composition of the present invention is used for polishing an object containing a phase-change alloy and is characterized by containing an ionic additive. Examples of the ionic additive include a cationic surfactant, an anionic surfactant, an amphoteric surfactant, and a cationic water-soluble polymer.

Abstract: A polishing composition contains a water-soluble polymer, a polishing accelerator, and an oxidizing agent. The water-soluble polymer is a polyamide-polyamine polymer having an amine value of 150 mg KOH/1 g·solid or greater.

Abstract: A polishing composition contains a nitrogen-containing compound and abrasive grains, and the pH of the composition is in the range of 1 to 7. The nitrogen-containing compound in the polishing composition preferably has a structure expressed by a formula: R1—N(—R2)—R3 in which R1, R2, and R3 each represent an alkyl group with or without a characteristic group, two of R1 to R3 may form a part of a heterocycle, and two of R1 to R3 may be identical and form a part of a heterocycle with the remaining one. Alternatively, the nitrogen-containing compound is preferably selected from a group consisting of a carboxybetaine type ampholytic surfactant, a sulfobetaine type ampholytic surfactant, an imidazoline type ampholytic surfactant, and an amine oxide type ampholytic surfactant. A polishing composition may contain a water-soluble polymer and abrasive grains, and the pH of the composition is in the range of 1 to 8.

Abstract: An apparatus for laser depilation according to the present invention uses a semiconductor laser diode, which is controlled in respect of its energy level, thereby permitting an economical, effective and safe cosmetic treatment. The power output of light of the semiconductor laser diode ranges from 5 to 1500 mW, and the peak wavelength ranges from 600 to 1600 nm. The controller of the semiconductor laser diode comprises pulsating power output control means and radiation period control means for setting a desired length of time for radiation. With these control means the energy level of the beam of light from the laser may be so controlled that a strong beam of light may be thrown for a relatively short time, or that a weak beam of light may be thrown for a relatively long time. Thus, hairs of different thickness and colors can be removed.

Abstract: A laser depilating method for depilating treatment by irradiating a skin surface with a laser beam emitted from a semiconductor laser. A treatment region of the skin surface is treated with a semiconductor laser beam for an irradiation time of 100 msec or more per irradiation while controlling the laser beam so that the energy density when irradiating the skin surface may be in a range of 0.01–1 J/mm2. Irradiation of the skin surface with a semiconductor laser beam under such a condition provides a more secure and efficient treatment effect of laser depilation. A plurality of semiconductor laser beams are used as necessary to irradiate a wider area of skin surface at a time.

Abstract: A supersonic beauty treatment device capable of effecting a beauty treatment for the skin and of slimming a selected portion of the body. A face beauty treatment head and body beauty treatment head are prepared, and either one is selectivley attached to the casing of the device. The casing has a tepped receptacle made on its front. Each head has a plug projecting from its base. The plug has threads fromed on its outer circumference. Thus, the head can be attached to the casing by screwing the plug in the receptacle, and two sets of switch contacts are formed on both sides of the center of the insulating bottoem of the receptacle. The electrically conductive inner circumference wall of the receptacle is grounded. The plug has a contact formed at its center, corresponding to the center contact of the receptacle.

Abstract: A beauty culture device capable of effecting facial shape-up in a comfortable and easy manner. Received in a mask (1) to be put on a face with the eye and nose portions cut off is a V-shaped airbag (2) closely contacted with the right and left cheeks with the jaw disposed therebetween, and a pair of right and left planar electrodes (3) to be contacted with the right and left cheeks and the jaw for electric conduction are stuck to the surface on the side opposed to the face. Further, a belt-like restraint (12) for fixing the mask (1) on the face by using a surface fastener for tightening is attached to the back of the mask (1).

Abstract: A supersonic beauty treatment device capable of effecting a beauty treatment for the skin and of slimming a selected portion of the body. A face beauty treatment head and body beauty treatment head are prepared, and either one is selectivley attached to the casing of the device. The casing has a tepped receptacle made on its front. Each head has a plug projecting from its base. The plug has threads fromed on its outer circumference. Thus, the head can be attached to the casing by screwing the plug in the receptacle, and two sets of switch contacts are formed on both sides of the center of the insulating bottoem of the receptacle. The electrically conductive inner circumference wall of the receptacle is grounded. The plug as a contact formed at is center, corresponding to the center contact of the receptacle.

Abstract: Disclosed is an exercise amount measuring device using as an exercise signal generator an inclination detector commercially available, which can detect two-dimensional movements. Use of such inclination detectors facilitates the assembly of exercise amount measuring devices. The inclination detector 1 is connected to a counter circuit via an input circuit, and the input circuit and the counter circuit are connected to an MPU via an input-and-output port. The input circuit comprises a CR circuit or a flip-flop circuit. The counter circuit counts input pulses post-chattering exclusion, which input pulses are caused by the on-and-off switching actions, which are brought every time the contact ball touches selected contact electrodes in the inclination detector.

Abstract: A laser beam projector equipped with a CCD camera for taking a picture of a spot for treatment, thus permitting observation of the spot by sight. The laser beam projector has an annular projection formed around a circular hole made on the front of its casing, and a trapezoid heat sink is fitted in the circular hole with its base caught by the circumference of the annular projection. The annular projection has threads formed on its outer circumference. A tapered cap has a laser beam throwing aperture made on its top end. The tapered cap is screwed and fixed to the annular projection, and the tapered head is applied to the spot with the laser beam aperture closed with the skin. The heat sink has a through hole made at its center, and a magnifying lens is placed deep in the through hole, and is directed to the laser beam throwing aperture. The CCD camera is placed behind the magnifying lens with its focal plan aligned with the lens.

Abstract: The instrument of the present invention irradiates a relatively large skin area evenly with laser beams. A plurality of semiconductor laser diodes are arranged to form two lines with the semiconductor laser diodes of one line staggered with those of the other line, and the semiconductor laser diodes of each line are so inclined that their laser beams may focus on a single line. With this arrangement the plurality of laser beams provide a linear distribution of narrow beam, and the scanning area on the skin can be expanded accordingly. The beauty treatment on the skin or the depilation treatment can be expedited significantly. Advantageously the focusing points of the laser beams are distributed at an increased density, and the irradiation strength averages everywhere to attain the even beauty treatment.

Abstract: A laser depilating method for depilating treatment by irradiating a skin surface with a laser beam emitted from a semiconductor laser. A treatment region of the skin surface is treated with a semiconductor laser beam for an irradiation time of 100 msec or more per irradiation while controlling the laser beam so that the energy density when irradiating the skin surface may be in a range of 0.01-1 J/mm2. Irradiation of the skin surface with a semiconductor laser beam under such a condition provides a more secure and efficient treatment effect of laser depilation. A plurality of semiconductor laser beams are used as necessary to irradiate a wider area of skin surface at a time.