Abstract: An electric work machine (1; 201) includes: a motor housing (6; 212) having a tube part (6C; 212C) and a bottom part (6M; 212M); a brushless motor (5; 228) having a stator (20), which has a first contact surface (58F; 258F), and a rotor (21; 231) disposed in the stator; a baffle plate (25; 285); and an output shaft (31; 292). The stator includes a tube-shaped stator core (50) having a ring-shaped second contact surface (50S; 250S) that is opposite of the first contact surface, and coils (56; 256) wound on the stator core. The stator is held by the motor housing with the first contact surface in contact with the bottom part. A protruding part (25S; 285S) of the baffle plate contacts the entire circumference of the second contact surface of the stator core and is fixed to the motor housing by three or more screws (68; 288).

Abstract: Provided is a cemented carbide comprising a plurality of tungsten carbide grains and a binder phase, wherein the cemented carbide comprises the tungsten carbide grains and the binder phase in a total of 89% by volume or more, the cemented carbide comprises 1.8% by volume or more and 20.0% by volume or less of the binder phase, the binder phase contains cobalt, the cemented carbide contains 1.0% by mass or more of cobalt, and a percentage (H2/H1)×100 of a hardness of the binder phase at 600° C., H2 GPa, to a hardness at 25° C., H1 GPa, as measured by a nanoindenter method is 25% or more.

Abstract: Provided is a cemented carbide comprising a plurality of tungsten carbide grains and a binder phase, wherein the cemented carbide comprises the tungsten carbide grains and the binder phase in a total of 89% by volume or more, the cemented carbide comprises 1.5% by volume or more and 23% by volume or less of the binder phase, the binder phase contains 40% by mass or more of cobalt, the binder phase further contains at least one first element selected from the group consisting of silicon, phosphorus, germanium, tin, rhenium, ruthenium, osmium, iridium, and platinum, the first element is not segregated in a first interface region between the tungsten carbide grains that are adjacent to each other, and the first element is not segregated in a second interface region between the tungsten carbide grain and binder phase that are adjacent to each other.

Abstract: A cemented carbide comprising a plurality of tungsten carbide particles and a binder phase, wherein the cemented carbide comprises a total of 80% by volume or more of the tungsten carbide particles and the binder phase, the cemented carbide comprises 0.1% by volume or more and 20% by volume or less of the binder phase, the cemented carbide comprises at least one first element selected from the group consisting of titanium, tantalum, niobium, zirconium, hafnium, and molybdenum, the cemented carbide comprises a total of 0.01 atomic % or more and 10.0 atomic % or less of the first element, the binder phase comprises 50% by mass or more of cobalt, and the first element is not segregated in a first interface region between the tungsten carbide particles adjacent to each other.

Abstract: Provided is a cemented carbide comprising a plurality of tungsten carbide grains and a binder phase, wherein the cemented carbide comprises the tungsten carbide grains and the binder phase in a total of 89% by volume or more, the cemented carbide comprises 1.8% by volume or more and 20.0% by volume or less of the binder phase, the binder phase contains cobalt, the cemented carbide contains 1.0% by mass or more of cobalt, and a Young's modulus of the binder phase at 25° C. is 170 GPa or more, as measured by a nanoindenter method.

Abstract: Provided is a cemented carbide comprising a plurality of tungsten carbide grains and a binder phase, wherein the cemented carbide comprises the tungsten carbide grains and the binder phase in a total of 89% by volume or more, the cemented carbide comprises 1.8% by volume or more and 20.0% by volume or less of the binder phase, the binder phase contains cobalt, the cemented carbide contains 1.0% by mass or more of cobalt, and a percentage (Y2/Y1)×100 of a Young's modulus of the binder phase at 600° C., Y2 GPa, to a Young's modulus at 25° C., Y1 GPa, as measured by a nanoindenter method is 50% or more.

Abstract: A light-diffusing sheet includes a plurality of depressed portions formed in an approximately inverted polygonal pyramid on at least a first surface. Ridgelines that partition the plurality of depressed portions have a depressed shape between intersections of the ridgelines with respect to straight lines that connect the intersections. When an array pitch of the plurality of depressed portions is denoted by P and a dimension occupied by a curved portion of a vertex of each of the ridgelines in an array direction of the plurality of depressed portions is denoted by Wr, a ratio Wr/P is 0.3 or lower. A maximum height difference d between the straight lines connecting the intersections of the ridgelines and the ridgelines is 1 ?m or more and 10 ?m or less. The plurality of depressed portions include a depressed portion of which a vertex of the approximately inverted polygonal pyramid is formed in a linear shape.

Abstract: A method for manufacturing a semiconductor device include: providing a submount that has a first surface, a second surface located on a side opposite the first surface, and at least one lateral surface located between the first surface and the second surface, the submount including: a groove located at the second surface, a heat dissipation portion located at the second surface, at least one end face through channel located at the at least one lateral surface, and an electrode pattern on the first surface; physically joining the heat dissipation portion to a package substrate by a first joint material; and after the step of physically joining the heat dissipation portion to the package substrate, disposing a second joint material inside the at least one end face through channel to electrically connect the electrode pattern and the package substrate.

Abstract: Provided is a surface inspection device 1 comprising a sample-driving unit 4 that stably holds a sample 2 irrespective of a rotation angle and that can precisely control the position of the sample 2 relative to vertical-direction driving. The sample-driving unit 4 has a support member 4a that holds the sample 2 and that can displace a sample-holding unit 3 in the vertical direction, and a sample drive source 4b that generates drive force for driving the sample 2. Based on the in-plane position and vertical-direction position of the sample 2 as sensed by a displacement sensor 10 while a spindle shaft 5 is rotating, a controller 13 calculates a different vertical-direction adjustment amount for each in-plane position of the sample 2 and drives the sample 2 by a first adjustment amount in the vertical direction by using a vertical driving stage 6. The sample-driving unit 4 drives the sample 2 in the vertical direction by a second adjustment amount smaller than the first adjustment amount.

Abstract: A cemented carbide comprising a plurality of tungsten carbide particles and a binder phase, wherein the cemented carbide comprises at least one first element selected from the group consisting of titanium, tantalum, niobium, zirconium, cerium, yttrium, and boron, and wherein in a first graph in a coordinate system where an X axis is a distance from a position at which cobalt exhibits a maximum intensity, and a Y axis is a normalized intensity, a maximum peak M of each of the first element is present between a peak W1 of tungsten closest to an origin and a further peak W2 of tungsten closest to the peak W1, a ratio IB/IA of an intensity IB to a maximum peak intensity IA of the maximum peak M is more than 0.5 in each of the first element, and the intensity IB is an intensity of the first element at a distance P2.

Abstract: A cemented carbide comprising a plurality of tungsten carbide particles and a binder phase, wherein in a first region of a first graph showing results obtained by carrying out line analysis along a first direction going from position X1 provided in the tungsten carbide particles to position X2 provided in the binder phase adjacent to the tungsten carbide particles, a distance PW at a maximum intensity IW of tungsten, a maximum distance PW70 showing an intensity IW70 of 70% of the maximum intensity IW, a distance PV at a maximum intensity IV of vanadium, a distance PCr at a maximum intensity ICr of chromium, a minimum distance PCo70 showing an intensity ICo70 of 70% of a maximum intensity ICo of cobalt, and a distance PCo at the maximum intensity ICo show a relationship PW<PW70<PV<PCr<PCo70<PCo.

Abstract: A cemented carbide includes a plurality of tungsten carbide particles and a binder phase, wherein the cemented carbide comprises at least one first element selected from the group consisting of titanium, tantalum, niobium, zirconium, cerium, yttrium, and boron, and wherein in a first graph in a coordinate system where an X axis is a distance from a position at which cobalt exhibits a maximum intensity, and a Y axis is a normalized intensity, a maximum peak M of each of the first element is present between a peak W1 of tungsten closest to an origin and a further peak W2 of tungsten closest to the peak W1, a ratio IB/IA of an intensity IB to a maximum peak intensity IA of the maximum peak M is 0.5 or less in each of the first element, and the intensity IB is an intensity of the first element at a distance P2.

Abstract: A cemented carbide comprising a plurality of tungsten carbide particles and a binder phase, wherein the cemented carbide comprises a total of 80% by volume or more of the tungsten carbide particles and the binder phase, the cemented carbide comprises 0.1 vol % or more and 20 vol % or less of the binder phase, the cemented carbide comprises at least one first element selected from the group consisting of boron, aluminum, silicon, iron, nickel, germanium, ruthenium, rhenium, osmium, iridium, and platinum, the cemented carbide comprises a total of 0.01 atomic % or more and 10 atomic % or less of the first element, the binder phase comprises 50% by mass or more of cobalt, the first element is segregated in a first interface region between the tungsten carbide particles adjacent to each other, and the first element is present at a C site of tungsten carbide in the first interface region.

Abstract: A light source device includes: a laser diode configured to emit laser light; a substrate directly or indirectly supporting the laser diode; and a cap secured to the substrate and covering the laser diode, the cap including: a first portion configured to transmit the laser light that is emitted from the laser diode, and a second portion that is bonded to the first portion. The second portion includes: a pair of lateral wall portions that are located at lateral sides of the laser diode, the pair of lateral wall portions being bonded to the first portion, a cover portion that is located above the laser diode and connects the pair of lateral wall portions together, and a rear wall portion that faces the first portion with the laser diode disposed between the first portion and the rear wall portion of the second portion.

Abstract: A method for manufacturing a semiconductor device include: providing a submount that has a first surface, a second surface located on a side opposite the first surface, and at least one lateral surface located between the first surface and the second surface, the submount including: a groove located at the second surface, a heat dissipation portion located at the second surface, at least one end face through channel located at the at least one lateral surface, and an electrode pattern on the first surface; physically joining the heat dissipation portion to a package substrate by a first joint material; and after the step of physically joining the heat dissipation portion to the package substrate, disposing a second joint material inside the at least one end face through channel to electrically connect the electrode pattern and the package substrate.

Abstract: A light-emitting device includes a substrate, a base disposed on the substrate, a light-emitting element disposed over the base, a frame body, and at least one of a functional element and a wire. The frame body includes an inner wall surface surrounding the base and the light-emitting element, an upper surface, and a lower surface connected to the substrate. At least one of the functional element and the wire is disposed on the substrate. At least a part of the at least one of the functional element and the wire is disposed below the light-emitting element. The inner wall surface includes an inclined surface that is inclined so that a distance between the inclined surface and the light-emitting element increases from an upper surface side toward a lower surface side. The at least one of the functional element and the wire is disposed between the inclined surface and the base.

Abstract: Provided is a novel device or a novel implantation device. The implantation device is one of the following: (1) an implantation device comprising a material (A) having a density of 12 mg/cm3 or more and a dissolution rate of 80% or less as determined after immersion of the material (A) in physiological saline at 37° C. for 24 hours; and (2) an implantation device comprising a material (A) having a dissolution rate of 80% or less as determined after immersion of the material (A) in physiological saline at 37° C. for 24 hours and a ratio of X/Y of 0.24 or more wherein X is a density (mg/cm3) of the material (A) and Y is a degree of swelling of the material (A) expressed in terms of fold increase as determined after immersion of the material (A) in physiological saline at 37° C. for 60 minutes.

Abstract: A light source device includes a substrate, an edge-emitting laser element, a surface-emitting laser element, and an optical member. The substrate has a supporting surface. The edge-emitting laser element is directly or indirectly supported by the supporting surface and configured to emit a first light beam in a first direction. The surface-emitting laser element is directly or indirectly supported by the supporting surface and configured to emit a second light beam in a second direction different from the first direction. The optical member is configured to receive the first light beam and the second light beam and to cause the first light beam and the second light beam to exit the optical member as light beams traveling along a same axis.

Abstract: Provided is a novel device (implantation device) containing a gelatin. The implantation device is made of a bioabsorbable non-woven fabric containing a gelatin.