Abstract: The present invention provides a vibration damping apparatus that performs vibration damping of a first optical element among a plurality of optical elements arranged in a barrel, comprising: a holding member connected to the barrel and configured to hold the first optical element; and a mass body supported by the holding member via a damper element, wherein the mass body includes a second optical element different from the first optical element among the plurality of optical elements.

Abstract: A movable iron core, a primary attracting and holding coil, a resistor electrically connected to an upstream start-up electric contact, and an auxiliary attracting and holding coil electrically connected to the upstream start-up electric contact are included. The movable iron core displaces a pinion from a separated position to a contact position. After the pinion is displaced from the separated position to the contact position, the upstream start-up electric contact is electrically disconnected from another start-up electric contact to cut off a current to the motor, and the movable iron core displaces the pinion from the contact position to an engaged position with the magnetomotive force of the primary attracting and holding coil and a magnetomotive force of the auxiliary attracting and holding coil. After the pinion is displaced from the contact position to the engaged position, main electric contacts are electrically connected to resume electric connection to the motor.

Abstract: Provided is an electromagnetic switch device for starter in which an auxiliary relay is provided and which has a small size and can be easily manufactured. The electromagnetic switch device for starter includes: a main contact chamber forming a space in which a pair of main fixed contacts are located and a main movable contact can move; and a sub contact chamber forming a space in which a pair of sub fixed iron cores (A), (B) are located and a sub movable contact can move; and a cylindrical terminal block in which the main contact chamber and the sub coil are arranged so as to be adjacent to each other in the radial direction with a partition wall provided therebetween and separating the sub coil and the main contact chamber from each other.

Abstract: A wedge tapping device for a rotating electrical machine to be inserted through a gap between a rotor and a stator to tap a wedge. The wedge tapping device includes: a tapping portion configured to tap the wedge and having a tapping force measuring portion configured to measure a tapping force of the tapping; an energy supplying portion configured to apply tapping energy to the tapping portion; an absorbing portion configured to suppress energy to be applied to the tapping portion; and a tapping arm, on which the tapping portion is disposed, and which has a longitudinal direction in a direction perpendicular to a direction in which the tapping portion performs tapping. The tapping arm is disposed so that the longitudinal direction is parallel to a rotation axis when the tapping is performed in the gap.

Abstract: The electromagnetic switch device for a starter includes: an A connector which forms a starting circuit, which is connected to a starting resistor, and which has an end at which one of a pair of starting circuit contacts is located; a B connector which forms the starting circuit, which is connected to one of a pair of main fixed contacts, and which has an end at which the other of the pair of starting circuit contacts is located; an insulating member electrically insulating the A connector and the B connector from a main fixed core; and an elastic member sealing a contact chamber, wherein the A connector and the B connector are held between a terminal block and the main fixed core with the insulating member and the elastic member interposed therebetween.

Abstract: An electromagnetic switch device for starter includes a connector assembly which has a plurality of connectors formed by stamping a conductive material and which forms a motor electric circuit and an electric circuit for supplying power to an attraction coil and a holding coil, wherein the connector assembly includes: a connector (A) connecting one of a pair of sub fixed contacts and a battery terminal; a connector (B) connecting the other one of the pair of sub fixed contacts, and one end of the attraction coil and one end of the holding coil; a connector (C) connecting the other end of the attraction coil and a motor terminal; a connector (D) connecting one end of a sub coil and an S terminal; and a resin member integrally fixing at least one pair of the connector (A), the connector (B), the connector (C), and the connector (D).

Abstract: An electromagnetic switch device for starter includes a connector assembly which has a plurality of connectors formed by stamping a conductive material and which forms a motor electric circuit and an electric circuit for supplying power to an attraction coil and a holding coil, wherein the connector assembly includes: a connector (A) connecting one of a pair of sub fixed contacts and a battery terminal; a connector (B) connecting the other one of the pair of sub fixed contacts, and one end of the attraction coil and one end of the holding coil; a connector (C) connecting the other end of the attraction coil and a motor terminal; a connector (D) connecting one end of a sub coil and an S terminal; and a resin member integrally fixing at least one pair of the connector (A), the connector (B), the connector (C), and the connector (D).

Abstract: Provided is an electromagnetic switch device for starter in which an auxiliary relay is provided and which has a small size and can be easily manufactured. The electromagnetic switch device for starter includes: a main contact chamber forming a space in which a pair of main fixed contacts are located and a main movable contact can move; and a sub contact chamber forming a space in which a pair of sub fixed iron cores (A), (B) are located and a sub movable contact can move; and a cylindrical terminal block in which the main contact chamber and the sub coil are arranged so as to be adjacent to each other in the radial direction with a partition wall provided therebetween and separating the sub coil and the main contact chamber from each other.

Abstract: A system for displaying images. The system comprises a thin film transistor (TFT) device comprising a substrate having a pixel region. An active layer is disposed on the substrate of the pixel region, comprising a channel region, a pair of source/drain regions separated by the channel region. The channel region comprises dopants with a first conductivity type and a second conductivity type opposite to the first conductivity type. A gate structure is disposed on the active layer, comprising a stack of a gate dielectric layer and a gate layer. A method for fabricating a system for displaying images including the TFT device is also disclosed.

Abstract: An exposure apparatus configured to expose a substrate to light to transfer a pattern of a reticle onto the substrate includes a reticle stage configured to mount the reticle, a structure configured to support the reticle stage, a plurality of first supporting members configured to support the structure; and a second supporting member configured to support the structure outside an area formed by connecting the three first supporting members. The second supporting member includes a unit configured to dampen vibration of the structure.

Abstract: An image display system has a multi-gate thin film transistor (TFT) disposed on a transparent substrate. The multi-gate TFT includes a silicon film layer, a first electrode and a reflecting layer. The silicon film layer is formed on the transparent substrate and has a first crystallization zone and a second crystallization zone, which are not adjacent to each other. A grain size of the first crystallization zone is smaller than a grain size of the second crystallization zone. The first electrode corresponding to the first crystallization zone is disposed on the silicon film layer. The reflecting layer corresponding to the second crystallization zone is disposed on the transparent substrate. The silicon film layer is disposed on the transparent substrate and the reflecting layer.

Abstract: A system for displaying images comprises a thin film transistor (TFT) device comprising first and second active layers disposed on a substrate in the driving circuit region and in the pixel region, respectively. Each active layer comprises a channel region, a source/drain region and a lightly doped region formed therebetween. Two gate structures are disposed on the first and second active layers, respectively. Each gate structure comprises a stacked first and second gate dielectric layers and a gate layer, and the second gate dielectric layer has a length shorter than that of the first gate dielectric layer but longer than the gate length of the gate layer. The lightly doped region of the first active layer has a length different from that of the second active layer.

Abstract: A system for displaying images. The system comprises a thin film transistor (TFT) device comprising a substrate comprising a driving circuit region and a pixel region. First and second active layers are disposed on the substrate in the driving circuit region and in the pixel region, respectively. The first active layer has a grain size greater than that of the second active layer. Two gate structures are disposed on the first and second active layers, respectively, in which each gate structure comprises a stack of a gate dielectric layer and a gate layer. A reflector is disposed on the substrate under the first active layer and insulated from the first active layer. A method for fabricating a system for displaying images including the TFT device is also disclosed.

Abstract: An exposure apparatus configured to expose a substrate to light to transfer a pattern of a reticle onto the substrate includes a reticle stage configured to mount the reticle, a structure configured to support the reticle stage, a plurality of first supporting members configured to support the structure; and a second supporting member configured to support the structure outside an area formed by connecting the three first supporting members. The second supporting member includes a unit configured to dampen vibration of the structure.

Abstract: For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

Abstract: An image display system has a multi-gate thin film transistor (TFT) disposed on a transparent substrate. The multi-gate TFT includes a silicon film layer, a first electrode and a reflecting layer. The silicon film layer is formed on the transparent substrate and has a first crystallization zone and a second crystallization zone, which are not adjacent to each other. A grain size of the first crystallization zone is smaller than a grain size of the second crystallization zone. The first electrode corresponding to the first crystallization zone is disposed on the silicon film layer. The reflecting layer corresponding to the second crystallization zone is disposed on the transparent substrate. The silicon film layer is disposed on the transparent substrate and the reflecting layer.

Abstract: A system for displaying images. The system comprises a thin film transistor (TFT) device comprising a substrate comprising a driving circuit region and a pixel region. First and second active layers are disposed on the substrate in the driving circuit region and in the pixel region, respectively. The first active layer has a grain size greater than that of the second active layer. Two gate structures are disposed on the first and second active layers, respectively, in which each gate structure comprises a stack of a gate dielectric layer and a gate layer. A reflector is disposed on the substrate under the first active layer and insulated from the first active layer. A method for fabricating a system for displaying images including the TFT device is also disclosed.

Abstract: A system for displaying images. The system comprises a thin film transistor (TFT) device comprising a substrate having a pixel region. An active layer is disposed on the substrate of the pixel region, comprising a channel region, a pair of source/drain regions separated by the channel region. The channel region comprises dopants with a first conductivity type and a second conductivity type opposite to the first conductivity type. A gate structure is disposed on the active layer, comprising a stack of a gate dielectric layer and a gate layer. A method for fabricating a system for displaying images including the TFT device is also disclosed.

Abstract: A system for displaying images comprises a thin film transistor (TFT) device comprising first and second active layers disposed on a substrate in the driving circuit region and in the pixel region, respectively. Each active layer comprises a channel region, a source/drain region and a lightly doped region formed therebetween. Two gate structures are disposed on the first and second active layers, respectively. Each gate structure comprises a stacked first and second gate dielectric layers and a gate layer, and the second gate dielectric layer has a length shorter than that of the first gate dielectric layer but longer than the gate length of the gate layer. The lightly doped region of the first active layer has a length different from that of the second active layer.

Abstract: A method for fabricating a system for displaying images is provided, wherein the system comprises a low temperature polysilicon thin film transistor (LTPS-TFT) substrate. The method comprises providing a substrate comprising a first metal layer and a silicon film layer. The silicon film layer is illuminated t by a laser light having a wavelength larger than 400 nm. The silicon film layer is heated to crystallize by absorbing a part of the laser light, and is heated to re-crystallize by absorbing another part of the laser light, which passes through the silicon film layer and is reflected from the first metal layer to the silicon film layer.