Abstract: To provide a manufacturing method of thin film transistors (TFT) using poly-silicone and having an LDD structure. In particular, the LDD sections of the TFTs are formed in an improved method so as to achieve a high throughput and stable performance of the TFTs. To be specific, the LD region is doped at a low concentration in the ion implantation method which includes mass spectrometry because high controllability over a dose is required. On the other hand, the source and drain regions are doped at a higher concentration than the LD region in the ion showering method which does not include mass spectrometry. Using the ion showering method, poly-crystal silicon can be doped such that less doping damage is caused thereto. This makes it possible to apply a lower temperature for annealing, such as RTA, to activate doped impurities so as to prevent the substrate from being curved.

Abstract: A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.

Abstract: In a starter including a planetary gear reducer for reducing a rotational output of a motor and transmitting the reduced rotational output to a starting object, the motor includes an armature 3, a motor output shaft 31 and a cylindrical yoke 1. The planetary gear reducer includes a ring gear 8 fitted in and engaged with the yoke at its one end and having an inner peripheral gear portion 11 formed on the inner periphery thereof, a bearing 13 mounted on the side wall of the ring gear at the center thereof, a plurality of planetary gears 4 rotatably interposed between the outer peripheral gear portion 32 of the motor output shaft and the inner peripheral gear portion of the ring gear and a starter output shaft 21 rotatably supported by the ring gear side wall, the starter output shaft being connected at its one end with the planetary gears and adapted to be engageable at its other end with the starting object.

Abstract: A dry etching method includes the steps of etching a transparent electrode film by reactive ion etching with a first etching gas, changing the first etching gas to a second etching gas, and etching the transparent electrode film by reactive ion etching with the second etching gas. A chlorine containing gas is employed as the second etching gas.

Abstract: A liquid crystal display unit is described, which includes a first substrate, a second substrate opposing to the first substrate, pixel driving elements, first and second insulation layers, a planarizing film and a liquid crystal layer. The pixel driving elements are disposed on the first substrate and between the first and second substrates. The first insulation layer is deposited over the first substrate and the pixel driving elements. The planarizing film is formed on the first insulation layer. This planarizing film provides a substantially flat surface over the first substrate to minimize a height of a step present between an area corresponding to each pixel driving element and an area locating adjacent to the pixel driving element on the first substrate. The second insulation layer is formed on the planarizing film. The display electrodes are formed on the second insulation layer and electrically connected to the pixel driving elements, respectively.

Abstract: A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amorphous silicon film is formed on the first polycrystalline silicon film and oxide layer. The amorphous silicon film is subjected to a solid phase growth process to be converted to a second polycrystalline silicon film. The field effect mobility of the second polycrystalline silicon film can be adjusted to a desired value by controlling the relative thicknesses of the first and second polycrystalline silicon films.

Abstract: A permanent magnet type motor comprising:a field magnet including permanent magnet arranged inside a yoke in an 8-pole structure; andan armature including an armature coil and armature core, the armature coil and the armature core arranged inside the field magnet through an air gap;wherein the field magnet has a pole arc set in a range from 31.degree. to 37.degree., and wherein the length (lm) of main poles in an axial direction is set with respect to the length (Lc) of the armature core in the axial direction so as to satisfy the inequality of 1.0<Lm/Lc<1.4.

Abstract: The invention relates to a method of growing a single crystal CaF.sub.2 film on a single crystal Si substrate having a principal plane of (100). According to the invention, the substrate temperature is first set at 550.degree.-600.degree. C. to grow a first CaF.sub.2 film (first stage) and the substrate temperature is then raised to 750.degree. C. or higher to grow a second CaF.sub.2 film on the first CaF.sub.2 film (second stage), thus the growth of the CaF.sub.2 films is performed separately in two stages. Since, in the second stage, the growth of CaF.sub.2 film is possible even at higher substrate temperature, the method of growing according to the invention makes it possible to grow a single crystal CaF.sub.2 film with flat surface morphology and excellent crystal quality.

Abstract: An automobile front body construction which includes a reinforced beam assembly extending between a pair of front pillars. The reinforced beam assembly includes an elongated main frame member of generally U-shaped cross-section, having a wall section and upper and lower flanges protruding from the wall section generally at right angles thereto. The main frame member also has a generally rectangular opening extending in face-to-face relation to the wall section and over the entire length thereof. An elongated closure member closes the rectangular opening and is positioned in spaced and face-to-face relation to the wall section, the opposite end portions of the wall section being rigidly secured to an upper dash panel. The opposite ends of the closure member are rigidly connected to the respective front pillars.