Abstract: In a variable stroke internal combustion engine, by determining the relationships of a connecting point (D) between a first link (4) and second link (5) and a connecting point (B) between the second link (5) and a control link (12) with respect to a center (A) of a crankpin (9) to be such that ?D<?B holds over an entire rotational angle of the crankshaft, where ?D is the distance between D and A and ?B is the distance between B and A, an adequate durability of the engine can be ensured without increasing the weight thereof.

Abstract: The present invention provides an X-ray detecting element that can obtain radiation images by X-rays of different energies by irradiation of X-rays a single time, without positional offset arising. A first scintillator is provided at an outer side of a sensor portion and a sensor portion of one surface side of a substrate. A second scintillator is provided at another surface side of the substrate. X-rays that are irradiated from the one surface side or the other surface side of the substrate are converted into light at the first and second scintillators. The sensor portion detects light that is illuminated from the first scintillator of the one surface side, and the sensor portion detects light that is illuminated from the second scintillator of the other surface side of the substrate.

Abstract: The present invention provides an X-ray detecting element that obtains radiation images by X-rays of different energies by irradiation of X-rays at a single time, without positional offset arising. Two X-ray detecting sections are provided so as to be layered at a substrate in a direction of irradiation of X-rays. A first X-ray detecting section detects irradiated X-rays, and a second X-ray detecting section detects X-rays that are transmitted through the first X-ray detecting section.

Abstract: An active matrix substrate includes a transistor, a pixel electrode connected with one of the current-flowing electrodes of the transistor, a storage capacitor wiring, a lead wiring extending from one of the current-flowing electrodes of the transistor, and a repair wiring extending from the storage capacitor wiring. The repair wiring overlaps a portion of the lead wiring with an insulating layer interposed therebetween. As a result, TFT defects (for example, a short circuit between a source electrode and a drain electrode) can be repaired, and performance of fast display and reduction in electric power consumption can be realized.

Abstract: The present invention provides a detection element that can suppress generation of a residual image. A sensor portion includes a semiconductor layer, an upper electrode and a lower electrode. The semiconductor layer generates charges due to light being illuminated thereto. The upper electrode applies a bias voltage to the semiconductor layer. The lower electrode collects charges that have been generated at the semiconductor layer. The charges that have been generated at the semiconductor layer are collected and accumulated by the lower electrode. In the detection element, a saturation prevention circuit (diode and second bias line) is provided through which the accumulated charges flow-out when the charges that have been generated at the semiconductor layer are collected and a voltage level of the lower electrode becomes a saturation prevention voltage level Vs.

Abstract: The present invention provides an electromagnetic wave detection element that can raise the speed of image read-out. Scan lines are each disposed to plural pixel lines for each of the pixel lines in a row direction of plural pixels disposed in a matrix array, and switches each TFT switch provided to respective pixels in the plural pixel lines by the respective scan lines. Plural signal lines are each disposed to each of the pixel lines in the column direction of the matrix array. In each of the pixel lines in the column direction, the respective signal line is connected to a different TFT switch from the TFT switches that are connected to the same respective scan line, and the charge accumulated in storage capacitors is read out through each of the signal lines according to the state of the TFT switches.

Abstract: A semiconductor integrated device comprises: a light-shielding film which shields at least some part of a transfer section of the semiconductor integrated device from light; a first wiring formed in the same layer as the light-shielding film, with one end connected to a pad electrode and an other end extended to a side edge of the semiconductor substrate; a second wiring arranged to go around a side face of the semiconductor substrate, and connected to the first wiring; and a sealing member which seals the solid-state image sensor.

Abstract: An image detection device has an image detector equipped with a detection section having a charge generation section that receives irradiation of electromagnetic waves and generates charges, a storage capacitor in which two electrodes are disposed so as to oppose one another and which accumulates charges generated at the charge generation section, and a TFT switching element for reading out charges accumulated in the storage capacitor. At a time before a point in time of reading out of charges from the storage capacitor via the switching element of the image detector, a reference potential of the storage capacitor is varied by a variable Cs power source, and leak current sufficiently flows before reading out of a charge signal from the image detector. Leak current is thereby reduced sufficiently at a time of reading out the charge signal.

Abstract: An active matrix substrate includes a plurality of transistors. A source electrode is connected with a data signal line, and a drain electrode is connected with a pixel electrode in each transistor. The source electrode is located on a semiconductor layer, and at least a portion of the drain electrode is overlapped with the gate electrode. A gate insulating film covering the gate electrode of each transistor has a thin section having a reduced film thickness, at a portion where the gate insulating film is overlapped with each gate electrode. An overlapping area of the thin section with the source electrode is smaller than an overlapping area of the thin section with the drain electrode. Thus, the active matrix substrate can prevent the generation of short-circuits between the signal lines (between the data signal line and a scanning signal line) in a TFT forming region, while guaranteeing TFT characteristics.

Abstract: The present invention provides an electromagnetic wave detecting element that can suppress occurrence of cracking at a substrate peripheral portion, and occurrence of breakage of lead-out wires. An interlayer insulating film is formed so as to cover TFT switches on a substrate. An interlayer insulating film is formed so as to cover semiconductor layer of sensor portions that generate charges due to electromagnetic waves that are an object of detection being irradiated, and cover a region on the substrate where the interlayer insulating film is formed.

Abstract: The present invention is to provide an electromagnetic wave detecting element that can suppress the trapping of charges in a semiconductor layer. Plural lower electrodes, which collect charges generated in the semiconductor layer, are each provided to cover at least a portion in a length direction and the entire region in a width direction of a scan line adjacent thereto, and the lower electrodes are disposed at positions at which the scan lines are provided.

Abstract: The present invention is to provide an electromagnetic wave detecting element that can suppress a decrease in utilization efficiency of electromagnetic waves at sensor portions. An upper electrode of each of plural sensor portions, that are provided in correspondence with intersection portions of plural scan lines and plural signal lines disposed to intersect one another, is electrically connected to any other adjacent upper electrode. At each group of sensor portions whose upper electrodes are electrically connected, a common electrode line and the upper electrode of any sensor portion belonging to that group of sensor portions are connected by a contact pad via a contact hole formed in an insulating film and at a connection place of a number that is less than a number of sensor portions belonging to that group of sensor portions.

Abstract: An active matrix substrate includes a transistor, a pixel electrode connected with one of the current-flowing electrodes of the transistor, a storage capacitor wiring, a lead wiring extending from one of the current-flowing electrodes of the transistor, and a repair wiring extending from the storage capacitor wiring. The repair wiring overlaps a portion of the lead wiring with an insulating layer interposed therebetween. As a result, TFT defects (for example, a short circuit between a source electrode and a drain electrode) can be repaired, and performance of fast display and reduction in electric power consumption can be realized.

Abstract: A radiation image detector including the following layers stacked on top of another: a charge generation layer that generates charges by receiving radiation; and a detection layer which includes: multitudes of pixels, each having a collection electrode for collecting charges generated in the charge generation layer, a storage capacitor for storing charges collected by the collection electrode, and a TFT switch for reading out charges stored in the storage capacitor; multitudes of scanning lines for switching ON/OFF the TFT switches; and multitudes of data lines through which charges stored in the storage capacitors are read out. Here, each of the storage capacitors is formed between a storage capacitor electrode connected to the drain electrode of a TFT switch and the scanning line connected to a TFT switch adjacent to the TFT switch to which the drain electrode belongs.

Abstract: The present invention is to provide an electromagnetic wave detecting element that can prevent a decrease in light utilization efficiency at sensor portions. The sensor portions are provided so as to correspond to respective intersection portions of scan lines and signal lines, and have semiconductor layer that generate charges due to electromagnetic waves being irradiated, and at whose electromagnetic wave irradiation surface sides upper electrodes are formed, and at whose electromagnetic wave non-irradiation surface sides lower electrodes are formed. Bias voltage is supplied to the respective upper electrodes via respective contact holes by a common electrode line that is formed further toward an electromagnetic wave downstream side than the semiconductor layer.

Abstract: A radiation image detector including: a plurality of image sensing sections, disposed on a substrate in an array, for converting radiation to electrical signals; a plurality of data lines for transferring electrical signals converted by the image sensing sections; a charge amplifier circuit for integrating electrical signals transferred by the data lines; and a selector circuit for connecting a plurality of data lines to the charge amplifier circuit by sequentially switching the data lines.

Abstract: A solid image capturing element comprising a plurality of vertical shift registers arranged to each correspond to a column of a plurality of light receiving pixels in a matrix arrangement, a horizontal shift register provided on an output side of the plurality of vertical shift registers, and an output section provided on an output side of the horizontal shift register. In this solid image capturing element, a reverse conductive semiconductor region is formed over one major surface of one conductive semiconductor substrate, the plurality of light receiving pixels, the plurality of vertical shift registers, the horizontal shift register, and the output section are formed in the semiconductor region, and a portion of the semiconductor region where the output section is formed has a higher dopant concentration than the portion of the semiconductor region where the horizontal shift register is formed.

Abstract: An active matrix substrate includes a transistor, a pixel electrode connected with one of the current-flowing electrodes of the transistor; a storage capacitor wiring; a lead wiring extending from one of the current-flowing electrodes of the transistor; and a repair wiring extending from the storage capacitor wiring. The repair wiring overlaps a portion of the lead wiring with an insulating layer interposed therebetween. As a result, TFT defects (for example, a short circuit between a source electrode and a drain electrode) can be repaired, and performance of fast display and reduction in electric power consumption can be realized.

Abstract: A fuel injection control apparatus of an internal combustion engine is provided with a fuel injection valve that injects fuel directly into a combustion chamber and a controller. When the engine is cold started (i.e., YES in step S10), a first fuel injection is performed and the injected fuel is spark ignited during the compression stroke, and a second fuel injection is performed during the expansion stroke. The controller selects, according to exhaust emissions, one of a first fuel injection rate and a second fuel injection rate that is lower than the first fuel injection rate as a fuel injection rate during at least the expansion stroke and injects fuel at the selected fuel injection rate. The second fuel injection rate is selected as the fuel injection rate of the second fuel injection and the start timing of the injection is advanced compared with the conventional injection start timing (i.e., when a reference fuel pressure is used) (steps S11 to S16).

Abstract: A phase contrast radiation imaging apparatus is includes a radiation source, a diffraction grating, and a radiation image detector. The radiation image detector is equipped with a charge generating layer that generates electric charges when irradiated with radiation, and charge collecting electrodes that collect the electric charges. The charge collecting electrodes are linear electrode groups, constituted by linear electrodes which are arranged at a constant period and are electrically connected to each other, provided to have different phases from each other. Thereby, use of a conventional amplitude diffraction grating is obviated.