Abstract: An image detector which includes an active matrix substrate and a protection substrate bonded to the active matrix substrate by an insulating bonding member, in which the insulating bonding member is bonded to the active matrix substrate through an inorganic insulating film disposed in an area around the periphery of the semiconductor layer.

Abstract: The present invention provides a sensor panel and an image detecting device that can suppress generation of artifacts and an increase in noise. A sensor panel has an image detecting region formed from plural image sensor portions, data lines reading signals out from the image sensor portions, bidirectional diodes disposed at a peripheral edge of the image detecting region and connected to the data lines, and, at an upper layer of the bidirectional diodes, a semiconductor film that generates charges due to irradiation of electromagnetic waves. At the sensor panel, shield electrodes, that are connected to a common line, are disposed between the bidirectional diodes and the semiconductor film.

Abstract: An active matrix substrate includes a transistor, a pixel electrode connected with one of the current-flowing electrodes of the transistor, a storage capacitor wiring, a lead wiring extending from one of the current-flowing electrodes of the transistor, and a repair wiring extending from the storage capacitor wiring. The repair wiring overlaps a portion of the lead wiring with an insulating layer interposed therebetween. As a result, TFT defects (for example, a short circuit between a source electrode and a drain electrode) can be repaired, and performance of fast display and reduction in electric power consumption can be realized.

Abstract: An image detecting device includes a substrate including plural accumulating portions, plural data lines, plural first protection lines, plural first diodes, and plural second diodes. The plural accumulating portions, due to the irradiation of incident electromagnetic waves expressing an image which is an object of detection, charges expressing the image are accumulated. In the plural data lines, the plural accumulating portions are respectively connected individually via switching elements. The plural first protection lines are for protecting a circuit from excess voltage. In the plural first diodes, anodes are connected to a portion of the plural first protection lines respectively, and cathodes are connected to the plural data lines respectively. In the plural of second diodes, cathodes are connected to another portion of the plural first protection lines respectively, and anodes are connected to the plural data lines respectively.

Abstract: In one embodiment of the present invention, the image display period of the first sub frame of an N-th frame is arranged to partly overlap the image display period of the second sub frame of the N-th frame and the image display period of the second sub frame of the (N?1)-th frame. Also, in each sub frame, a period in which grayscale display voltages are written into all horizontal lines of the display screen is arranged to be identical with the image signal input period of one frame of an input image signal. In addition, the grayscale display voltages with which pixels that are horizontally or vertically neighbored are charged are arranged to have inverse polarities, and the polarity of the grayscale display voltage charging each pixel is reversed in each frame. Furthermore, a short circuit period is provided and in this period neighboring data signal lines are short-circuited each time the polarity of the grayscale display voltage output to each data signal line is reversed.

Abstract: A radiation image detector including a charge generation layer, and a detection layer including: many pixels, each having a collection electrode for collecting charges generated in the charge generation layer, a storage capacitor for storing charges collected by the collection electrode, and a TFT switch for reading out charges from the storage capacitor; many scanning lines; and many data lines. Each storage capacitor is formed between a storage capacitor electrode connected to the drain electrode of a TFT switch and the scanning line connected to a TFT switch adjacent to the TFT switch to which the drain electrode belongs, an array of the TFT switches is divided into upper and lower halves, each data line is divided into upper and lower halves, and a dummy wire is provided at the division boundary for forming a storage capacitor of a pixel disposed at the division boundary section.

Abstract: An image detection device includes a sensor panel and a light. The sensor panel includes a semiconductor layer, which is formed on a substrate formed of a member having a light transmitting property and generates charges in response to X-rays radiated thereto, two pairs of electrodes each pair disposed in confrontation with each other, and a plurality of accumulating portions formed between the semiconductor layer and the substrate to accumulate the charges generated to the semiconductor layer as the information of the pixels constituting an image. The light radiates light to the surface of the sensor panel on the substrate side thereof. The respective electrodes of the accumulating portions are formed so that light having at least a predetermined intensity is radiated from the light to the regions of the semiconductor layer where the accumulating portions are formed.

Abstract: An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member.

Abstract: An image detection device has an image detector equipped with a detection section having a charge generation section that receives irradiation of electromagnetic waves and generates charges, a storage capacitor in which two electrodes are disposed so as to oppose one another and which accumulates charges generated at the charge generation section, and a TFT switching element for reading out charges accumulated in the storage capacitor. At a time before a point in time of reading out of charges from the storage capacitor via the switching element of the image detector, a reference potential of the storage capacitor is varied by a variable Cs power source, and leak current sufficiently flows before reading out of a charge signal from the image detector. Leak current is thereby reduced sufficiently at a time of reading out the charge signal.

Abstract: A display device which exhibits functional effects in which color separation between sub-pixels constituting a pixel is hardly recognized and white line display is easily recognized as one line, in enlargement of the color reproduction range in image display using multi-primary colors, and thereby improves display quality, and provides a liquid crystal display device including such a display device. The display device displays an image constituted by pixels each including sub-pixels of four or more colors, wherein the pixels constituting the display device mainly include a pixel arranging a sub-pixel of a color having the highest brightness value in a central region of the pixel.

Abstract: Improves the electric current driving capability of a thin film transistor without the yield being decreased due to a defective leak between a source electrode/drain electrode and a gate electrode or due to a decrease in an off-characteristic. A thin film transistor according to the present invention includes a gate electrode; an insulating film covering the gate electrode; a semiconductor layer provided on the insulating film; and a source electrode and a drain electrode provided on the insulating film and the semiconductor layer. The insulating film is a multiple layer insulating film including a first insulating layer and a second insulating layer provided on the first insulating layer. The multiple layer insulating film has a low stacking region excluding the first insulating layer and a high stacking region in which the first insulating layer and the second insulating layer are stacked. The first insulating layer is provided so as to cover at least an edge of the gate electrode.

Abstract: An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member.

Abstract: An active-matrix substrate includes: a base substrate; source lines; gate lines; thin-film transistors; and pixel electrodes. Each transistor is a bottom-gate thin-film transistor. The source lines are arranged under the gate lines with a first interlayer insulating film interposed and are electrically connected to the respective source electrodes of their associated thin-film transistors through contact holes cut through the first interlayer insulating film.

Abstract: An image detection apparatus includes a substrate, a middle layer formed on the substrate, the middle layer having a quadrilateral hole, and a photoelectric conversion layer deposited on the middle layer. The curvature radius of each of the corner portions of the quadrilateral hole is greater than or equal to 2 ?m. Further, the photoelectric conversion layer is made of an amorphous material.

Abstract: The invention provides an image detector capable of improving the quality of detected images by reducing electronic noise, the image detector comprising, a plurality of scan lines disposed in parallel, a plurality of data lines provided so as to cross with the scan lines, thin film transistors connected with the scan and data lines and provided in matrix, sensor sections connected to the thin film transistor and provided in a matrix and a plurality of common lines disposed so as to apply bias voltage commonly to the sensor sections provided in matrix. Each of the scan lines, data lines and common lines are formed by metal layers different from each other and provided with insulating film(s) disposed therebetween.

Abstract: A semiconductor integrated device comprises: a light-shielding film which shields at least some part of a transfer section of the semiconductor integrated device from light; a first wiring formed in the same layer as the light-shielding film, with one end connected to a pad electrode and an other end extended to a side edge of the semiconductor substrate; a second wiring arranged to go around a side face of the semiconductor substrate, and connected to the first wiring; and a sealing member which seals the solid-state image sensor.

Abstract: A radiation image detector including a charge generation layer, and a detection layer including: many pixels, each having a collection electrode for collecting charges generated in the charge generation layer, a storage capacitor for storing charges collected by the collection electrode, and a TFT switch for reading out charges from the storage capacitor; many scanning lines; and many data lines. Each storage capacitor is formed between a storage capacitor electrode connected to the drain electrode of a TFT switch and the scanning line connected to a TFT switch adjacent to the TFT switch to which the drain electrode belongs, an array of the TFT switches is divided into upper and lower halves, each data line is divided into upper and lower halves, and a dummy wire is provided at the division boundary for forming a storage capacitor of a pixel disposed at the division boundary section.

Abstract: A highly oxidation-resistant copper powder for conductive paste, which is a copper powder containing not more than 5 wt % of Si, is characterized in that substantially all of the Si is adhered to the surfaces of the copper particles as SiO2-system gel coating film.

Abstract: There is provided an information recording medium that reduces operation of shifting information backward or putting information forward closer together upon recording/deleting/dividing information to facilitate processes of recording/deleting/dividing information. An information recording medium records Programs 1 composed of image data, etc., UPGR 3 that refers to at least a part of the Programs 1, PGRG 5 that refers to the UPGR 3, a PGRM that collectively records the UPGR 3 and reference information thereof, and a PGRGM that collectively records the PGRG 5 and reference information thereof. When recording the UPGR 3, the information recording medium refers to the reference information contained in the PGRM, and when invalid reference information or reference information giving no reference to any UPGR 3 is present, records the UPGR 3 using the reference information.

Abstract: An image signal readout method for reading out an image signal from an image detector including multitudes of pixels, each having a TFT switch, disposed two-dimensionally, in which a leak level flowing out to each of the data lines are detected with a signal for switching OFF the TFT switches being applied to each of the scanning lines prior to reading out the image signal.