Abstract: A storage control apparatus monitors whether or not one or more storage management apparatuses are properly operating. A recovery target extraction unit extracts a recovery target storage area when the existence of a malfunctioning storage management apparatus is detected, the recovery target storage area being a storage area that has been duplexed with a storage area of the malfunctioning storage management apparatus. A duplexing control unit performs control so that, if the recovery target storage area has no data stored therein, the recovery target storage area is duplexed with a storage area that has no data stored therein and that is unused. If the recovery target storage area has data stored therein, the recovery target storage area is duplexed with a non-duplexed storage area and the data stored in the recovery target storage area is copied into the non-duplexed storage area.

Abstract: A storage management device includes a management unit for managing a storage device assigned thereto and a temporary storage unit assigned thereto. The management unit comprises a backup unit for, when data is written into the storage device, storing the data in the previously assigned temporary storage unit before the writing of the data into the storage device is completed, and a take-over unit for, when data which is already stored in the temporary storage unit, but which is not yet written into the storage device exists when the storage device and the temporary storage unit are assigned, writing the not-yet-written data into the storage device.

Abstract: A vacuum cleaner includes an electric blower that sucks dust through a suction connecting port, a first dust separating unit for separating the dust and air sucked into the suction connecting port from each other, and a pleat filter for separating the dust and air passing through a first dust separating unit. The vacuum cleaner further includes an external-air introducing air passage for introducing external air toward an upstream side of the pleat filter, a rotational fan for dropping off dust adhering to the pleat filter by the introduced external air, and a return air passage for returning the dust dropped off from the rotating fan toward the upstream side of the first dust separating unit by the introduced external air.

Abstract: The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, comprising a magneto-resistive effect unit, and a first shield layer and a second shield layer located and formed such that the magneto-resistive effect unit is sandwiched between them, with a sense current applied in a stacking direction. The magneto-resistive effect unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is interposed between them.

Abstract: A magnetic field detecting element has a stack which includes a NiCr layer, a first magnetic layer whose magnetization direction varies in accordance with an external magnetic field, a non-magnetic spacer layer, and a second magnetic layer whose magnetization direction varies in accordance with the external magnetic field, said NiCr layer, said first magnetic layer, said spacer layer and said second magnetic layer being disposed in this order and being arranged in contact with each other, wherein a sense current is adapted to flow in a direction that is perpendicular to a film surface of said stack; and a bias magnetic layer which is disposed on a side of said stack, said side being opposite to an air bearing surface of said stack, wherein said bias magnetic layer is adapted to apply a bias magnetic field to said stack in a direction that is perpendicular to said air bearing surface.

Abstract: A magneto-resistance element according to the present invention has a pinned layer whose magnetization direction is fixed; a free layer whose magnetization direction varies in accordance with an external magnetic field; and a nonmagnetic spacer layer that is arranged between the pinned layer and the free layer, at least the pinned layer or the free layer includes a layer having Heusler alloy represented by composition formula X2YZ (where X is a precious metal element, Y is a transition metal of Mn, V, or Ti group, Z is an element from group III to group V), and a part of composition X is replaced with Co, and an atomic composition ratio of Co in composition X is from 0.5 to 0.85.

Abstract: A free layer functions such that a magnetization direction changes depending on an external magnetic field, and is made up of a multilayer structure including a first Heusler alloy layer, and a fixed magnetization layer takes a form wherein an inner pin layer and an outer pin layer are stacked one upon another with a nonmagnetic intermediated layer sandwiched between them. The inner pin layer is made up of a multilayer structure including a second Heusler alloy layer. The first and second Heusler alloy layers are each formed by a co-sputtering technique using a split target split into at least two sub-targets in such a way as to constitute a Heusler alloy layer composition. When the Heusler alloy layer is formed, therefore, it is possible to bring up a film-deposition rate, improve productivity, and improve the performance of the device.

Abstract: A thin film magnetic head includes a dual spin-valve magneto-resistive element. The dual spin-valve magneto-resistive element has a dual spin-valve magneto-resistive effect multilayer film composed of a first antiferromagnetic layer, a first fixed magnetic layer being a synthetic ferrimagnetic fixed layer, a first nonmagnetic layer, a soft magnetic layer, a second nonmagnetic layer, and a second fixed magnetic layer being a synthetic ferrimagnetic fixed layer. A stacked film thickness relationship of the first fixed magnetic layer, a stacked film thickness relationship of the second fixed magnetic layer, and a magnetostrictive constant are determined, and it is configured such that a static magnetic field produced from the first fixed magnetic layer and a current magnetic field generated by a sense current act to assist magnetization of the second fixed magnetic layer.

Abstract: The invention provides a giant magneto-resistive effect device of the CPP (current perpendicular to plane) structure (CPP-GMR device) comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together with said spacer layer sandwiched between them, with a sense current passed in the stacking direction, wherein the first ferromagnetic layer and the second ferromagnetic layer function such that the angle made between the directions of magnetizations of both layers change relatively depending on an external magnetic field, said spacer layer contains a semiconductor oxide layer, and a nitrogen element-interface protective layer is provided at a position where the semiconductor oxide layer forming the whole or a part of said spacer layer contacts an insulating layer.

Abstract: An MR element has a pinned layer, a spacer layer, and a free layer successively stacked in the order named. The free layer includes a Heusler alloy layer in at least a region thereof adjacent to the spacer layer. An oxide is distributed as sea-islands in the interface between the Heusler alloy layer and the spacer layer. The Heusler alloy layer virtually has a stoichiometric composition. The oxide has an RA in the range from 0.10 ??m2 to 0.36 ??m2.

Abstract: The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, comprising a magneto-resistive effect unit, and an upper shield layer and a lower shield layer located with that magneto-resistive effect unit sandwiched between them, with a sense current applied in a stacking direction, wherein the magneto-resistive effect unit comprises a nonmagnetic metal intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with that nonmagnetic metal intermediate layer sandwiched between them, wherein the first ferromagnetic layer and said second ferromagnetic layer are exchange coupled via the nonmagnetic metal intermediate layer such that where there is no bias magnetic field applied as yet, their magnetizations are anti-parallel with each other, and at least one of the upper shield layer and the lower shield layer has an inclined magnetization structure with its magnetization inclining with respect to a track width direction

Abstract: An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located in the outer surface of the MR stack. The magnetoresistive element further includes a layered film that touches the periphery of the spacer layer. The spacer layer includes a semiconductor layer formed using an oxide semiconductor as a material. The layered film includes a first layer, a second layer, and a third layer stacked in this order. The first layer is formed of the same material as the semiconductor layer, and touches the periphery of the spacer layer. The second layer is a metal layer that forms a Schottky barrier at the interface between the first layer and the second layer. The third layer is an insulating layer.

Abstract: A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, a first non-magnetic intermediate layer which is sandwiched between the first magnetic layer and the second magnetic layer, the first non-magnetic intermediate layer producing a magnetoresistance effect between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer which is sandwiched between the second magnetic layer and the third magnetic layer, the second non-magnetic intermediate layer allowing the second magnetic layer and the third magnetic layer to be exchange-coupled such that magnetization directions thereof are anti-parallel to each other under no magnetic field, the stack being adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opp

Abstract: A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, the second magnetic layer being positioned between the first magnetic layer and the third magnetic layer, a first non-magnetic intermediate layer which is sandwiched between the first magnetic layer and the second magnetic layer, the first non-magnetic intermediate layer producing a magnetoresistance effect between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer which is sandwiched between the second magnetic layer and the third magnetic layer, the second non-magnetic intermediate layer allowing the second magnetic layer and the third magnetic layer to be exchange-coupled such that magnetization directions thereof are anti-parallel to each other under no magnetic field, the stack being adapted such that sense current flows in a direction that is perpendicular to a fi

Abstract: An MR element includes a stack of layers including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The stack of layers has an outer surface, and the spacer layer has a periphery located in the outer surface of the stack of layers. The magnetoresistive element further includes an insulating film that touches the periphery of the spacer layer. The spacer layer includes a layer made of an oxide semiconductor composed of an oxide of a first metal. The insulating film includes a contact film that touches the periphery of the spacer layer and that is made of an oxide of a second metal having a Pauling electronegativity lower than that of the first metal by 0.1 or more.

Abstract: A dust separation section is provided at a suction air passage between a suction opening of a vacuum cleaner main body and an intake opening of a motor fan to separate dust sucked from the suction opening with air and a dust collection section provided at the suction air passage for collecting the dust separated from the air from the dust separation section. Moreover, the dust separation section of the electric vacuum cleaner has a dust guiding space adapted to inflow the dust sucked from the suction opening from one end of the dust guiding space and for guiding the dust from an other end of the dust guiding space to the dust collection section, through a dust strike section, by an inertia force, and an air guiding air passage is provided to guide air from a midstream of the dust guiding space to the intake opening of the motor fan without passing through the dust collection section.

Abstract: A storage-management apparatus and method that manages storage areas. The storage-management apparatus includes a collecting unit that collects valid-area-determination information items, each of which shows whether a corresponding one of the storage areas is a valid or invalid area, and timestamp information items, each of which shows that a corresponding one of the storage areas has been accessed. In accordance with the valid-area-determination information items and the timestamp information items, data from a storage area which is selected from among valid areas and whose timestamp information item is oldest is copied to a storage area which is selected from among invalid areas and whose timestamp information item is oldest, and timestamp information items and valid-area-determination information items concerning the storage area from which the data is copied and concerning the storage area to which the data is copied is updated.

Abstract: A computer to runs access control to a plurality of storage areas by; (a) receiving write data, (b) reconfiguring the received data as split data by separating each byte of the received data into a plurality of bits, and (c) instructing writing the split data into a plurality of different storage areas.

Abstract: The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the free layer functions such that the direction of magnetization changes depending on an external magnetic field, and the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of zinc oxide, tin oxide, indium oxide, and indium tin oxide (ITO), the first nonmagnetic metal layer is made of Cu, and the second nonmagnetic metal layer is substantially made of Zn.

Abstract: A magnetoresistance effect element (MR element) for use in a thin-film magnetic head has a buffer layer, an antiferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer that are successively stacked. A sense current flows in a direction perpendicular to layer surfaces via a lower shield layer and an upper shield layer. The pinned layer comprises an outer layer having a fixed magnetization direction, a nonmagnetic intermediate layer, and an inner layer in the form of a ferromagnetic layer. The spacer layer comprises a first nonmagnetic metal layer, a semiconductor layer made of ZnO, and a second nonmagnetic metal layer. The inner layer or the outer layer includes a diffusion blocking layer made of an oxide of an element whose electronegativity is equal to or smaller than Zn, e.g., ZnO, TaO, ZrO, MgO, TiO, or HfO, or made of RuO.