Abstract: In a computer for executing processing based on a storage management program, a management information storing unit designates, from the data blocks having the same content, main-data used as an access destination and sub-data used as a backup, and stores management information that registers storage nodes as allocation destinations of the respective main-data and sub-data; a load information collecting unit continuously collects load information on the storage nodes; a replacement object detecting unit detects a pair of the main-data and the sub-data having the same content and having a predetermined condition such that a load difference between the allocation destination of the main-data and that of the sub-data exceeds a predetermined allowable value; and a management information updating unit replaces roles of the main-data and the sub-data between the detected pair of data blocks.

Abstract: According to an aspect of the embodiment, a packet analyzing apparatus monitors a concentration level of input and output access from an access apparatus to a disk device, specifies a data area to which the concentration level of input and output access exceeds a first threshold, and instructs a storage server to cache the data area. The packet analyzing apparatus monitors a concentration level of input and output access to a data area to which the data area is cached, and, when the concentration level of input and output access is below a second threshold, instructs the storage server to release the caching.

Abstract: A storage management apparatus that performs a read/write check on each of a plurality of data-storing areas of a storage device, and is formed by a storage node that performs reading/writing of the data in the storage device. A computer determines whether or not the data exits, by referring to a flag provided in each data-storing area. The computer performs only an operation of writing the data into the data-storing area in which the data does not exist, and perform operations of reading and writing the data from and into the data-storing area in which the data exists.

Abstract: Provided is a thin-film magnetic head that can stably generate electromagnetic field with a desired frequency, even under the existence of significantly strong write field with frequently reversed direction. The head comprises an electromagnetic-field generating element between the first and second magnetic poles. The electromagnetic-field generating element comprises a spin-wave excitation layer provided adjacent to the first magnetic pole and having a magnetization with its direction varied according to external magnetic fields, for generating an high frequency electromagnetic field by an excitation of spin wave. And a magnetization of the spin-wave excitation layer is biased in a direction substantially perpendicular to its layer surface by a portion of magnetic field generated from the first magnetic pole, and pin-wave excitation current flows in the electromagnetic-field generating element in a direction from the second pole to the first pole.

Abstract: A simultaneous failure occurrence degree calculation section calculates a simultaneous failure occurrence degree a value of which becomes smaller with an increase in a difference between numeric values indicative of manufacture date information on a computer which performs a process on the basis of a duplication combination management program. A combination pattern generation section then combines two of a plurality of storage apparatus and generates a plurality of combination patterns. A simultaneous failure occurrence degree adding section then calculates a total of simultaneous failure occurrence degrees corresponding to combinations of storage apparatus for each of the plurality of combination patterns. A duplication combination pattern determination section then determines that a combination pattern for which the total of simultaneous failure occurrence degrees is the smallest is a duplication combination pattern.

Abstract: A magneto resistance effect element includes a first magnetic layer, a second magnetic layer and a spacer layer interposed between the first and second magnetic layers. The magneto resistance effect element is configured to allow sense current to flow in a direction that is perpendicular to film planes of the first magnetic layer, the second magnetic layer and the spacer layer so that a relative angle between a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer varies depending on an external magnetic field. The present invention aims at providing a magneto resistance effect element which ensures high resistance to sense current, while limiting the influence of the current limiting layer on the magnetic layer, and which thereby achieves a high magneto resistance ratio.

Abstract: The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer which are located and formed such that the magnetoresistive unit is sandwiched between them with a sense current applied in a stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is sandwiched between them. The first shield layer and the second shield layer are each controlled by magnetization direction control means in terms of magnetization direction to create an antiparallel magnetization state where their magnetizations are in opposite directions.

Abstract: The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first, substantially soft magnetic shield layer positioned below and a second, substantially soft magnetic shield layer positioned above, which are located and formed such that the magnetoresistive effect is sandwiched between them from above and below, with a sense current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them. At least one of the first shield layer positioned below and the second shield layer positioned above is configured in a framework form having a planar shape (X-Y plane) defined by the width and length directions of the device.

Abstract: Processing time required from transmission of a request packet including a processing request from a client, until return of a reply packet in which internal information including an operation status of a plurality of servers is added to an execution result of processing corresponding to the processing request, obtained by the servers in cooperation with each other, is calculated by a function incorporated beforehand in the respective servers. Moreover, the internal information added to the reply packet is extracted and stored in an internal information DB in association with the calculated required time of the processing. Furthermore predetermined statistical processing is performed with respect to the internal information and the required time associated with the internal information stored in the internal information DB to analyze the operation status of the plurality of servers.

Abstract: The invention provides a process for the formation of a sensor site of a magnetoresistive device in which the first ferromagnetic layer and a nonmagnetic intermediate layer are formed in order, then surface treatment is applied to the surface of the nonmagnetic intermediate layer, and thereafter the second ferromagnetic layer is formed on the thus treated surface of the nonmagnetic intermediate layer. The surface treatment is implemented by a method of letting a modification element hit right on the surface of the nonmagnetic intermediate layer using a vacuum. The nonmagnetic intermediate layer is composed mainly of an oxide or nitride, and the modification element is a low-melting element having a melting point of 500° C. or lower. It is thus possible to reduce spin scattering while reducing oxidization or nitriding of the surfaces of the ferromagnetic layers used for the sensor site, thereby achieving high MR change rates.

Abstract: A data allocation control program manages data allocation when data is distributively stored in a plurality of disk nodes that are shifted to a power saving mode unless access is performed for a certain time. The program produces a plurality of allocation pattern candidates each indicating the disk nodes in which the respective data are to be stored. The program calculates a no-access period expectation that represents an expected value of occurrence of a no-access period during which access is not performed to some of the disk nodes. The program selects as an allocation pattern for data reallocation, one of the plurality of produced allocation pattern candidates with the largest calculated no-access period expectation. The program instructs the disk nodes to reallocate the respective data in accordance with the selected allocation pattern.

Abstract: An allocation control apparatus may access an address table storing addresses of slice areas allocated in a storage area for an entire storage system having a plurality of storage devices and addresses that do not correspond to allocated slice areas. The allocation control apparatus includes a reception unit receiving a request for allocating an arbitrary storage capacity an allocation unit allocating, by referring to the address table, an address that does not correspond to the allocated slice area for at least a part of the requested storage capacity and allocates an address for the slice area to the remaining storage capacity when the reception unit receives the allocation request, and a transmission unit transmitting the result allocated by the allocation unit to a requesting source of the allocation request.

Abstract: A power consumption monitor device monitors power consumption of one or more devices through a network. The monitor device includes a storage unit, a load information collecting unit and a power consumption estimation unit. The storage unit stores power consumption estimation information indicating a relation between power consumption and processing load of the one or more devices. The load information collecting unit collects load information indicating the processing load of the one or more devices through the network to the monitor device. The power consumption estimation unit estimates power consumption of the one or more device based on the collected load information and the power consumption estimation information.

Abstract: The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic l

Abstract: A magnetoresistive device comprising a magnetoresistive unit, an upper shield layer and a lower shield shield layer stacked such that the magnetoresistive unit is held between them. The magnetoresistive unit comprises a nonmagnetic metal intermediate layer, a first ferromagnetic layer and a second ferromagnetic layer stacked with the nonmagnetic metal intermediate layer in the middle. When no bias magnetic field is applied, the first and second ferromagnetic layers have mutually antiparallel magnetizations. The magnetoresistive unit further comprises first and second side shield layers, and first and second biasing layers located to be magnetically coupled to the first and second side shield layers, wherein magnetic fluxes fed from the bias magnetic fields pass through the first and second side shield layers positioned in proximity to the magnetoresistive unit such that the magnetizations of the first and second ferromagnetic layers become substantially orthogonal to each other.

Abstract: A magnetoresistance effect element comprises: a pair of magnetic layers whose magnetization directions form a relative angle therebetween that is variable depending on an external magnetic field; and a crystalline spacer layer sandwiched between the pair of magnetic layers; wherein sense current may flow in a direction that is perpendicular to a film plane of the pair of magnetic layers and the spacer layer. The spacer layer includes a crystalline oxide, and either or both magnetic layers whose magnetization direction is variable depending on the external magnetic field has a layer configuration in which a CoFeB layer is sandwiched between a CoFe layer and a NiFe layer and is positioned between the spacer layer and the NiFe layer.

Abstract: In a system management apparatus, a failure detection unit detects a readout failure in one of blocks constituting distributed data stored in a first RAID disk array. A request unit requests a computer to supplement one of the blocks of the distributed data stored in the first RAID disk array in which a readout failure irrecoverable by use of only the data stored in the first RAID disk array occurs, where the computer has a second RAID disk array storing a duplicate of the distributed data stored in the first RAID disk array. And an overwriting unit receives data corresponding to the one of the blocks from the computer, and overwrites the one of the blocks with the received data.

Abstract: In an MR element, first and second ferromagnetic layers are antiferromagnetically coupled to each other through a spacer layer, and have magnetizations that are in opposite directions when no external magnetic field is applied thereto and that change directions in response to an external magnetic field. The spacer layer and the second ferromagnetic layer are stacked in this order on the first ferromagnetic layer. The first ferromagnetic layer includes a plurality of ferromagnetic material layers stacked, and an insertion layer made of a nonmagnetic material and inserted between respective two of the ferromagnetic material layers that are adjacent to each other along the direction in which the layers are stacked. The ferromagnetic material layers and the spacer layer each include a component whose crystal structure is a face-centered cubic structure.

Abstract: A storage management apparatus manages a plurality of storage apparatuses connected to each other over a network in a storage system that distributes data among the storage apparatuses and stores the data therein. The storage management apparatus has a patrol process executing unit configured to execute a patrol process to confirm whether a storage area of each storage apparatus operates normally and a patrol flow controlling unit configured to control a patrol flow indicating the speed of the patrol process executed by the patrol process executing unit.

Abstract: A storage control apparatus monitors whether or not one or more storage management apparatuses are properly operating. A recovery target extraction unit extracts a recovery target storage area when the existence of a malfunctioning storage management apparatus is detected, the recovery target storage area being a storage area that has been duplexed with a storage area of the malfunctioning storage management apparatus. A duplexing control unit performs control so that, if the recovery target storage area has no data stored therein, the recovery target storage area is duplexed with a storage area that has no data stored therein and that is unused. If the recovery target storage area has data stored therein, the recovery target storage area is duplexed with a non-duplexed storage area and the data stored in the recovery target storage area is copied into the non-duplexed storage area.