Abstract: An MR element in a CPP structure includes an MR part configured with a nonmagnetic layer, a first ferromagnetic layer that functions as first free layer and a second ferromagnetic layer that functions as a second free layer, and first and second ferromagnetic layers are laminated to sandwich the nonmagnetic intermediate layer, and a sense current flows in a lamination direction of the MR part, an orthogonalizing bias function part, which influences a substantial orthogonalization function for magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer, is formed on the rear side the MR part, side shield layers are disposed on both sides in the width direction of the MR part, the side shield layers are perpendicular magnetized layers with a magnetic shield function, and magnetization directions of the perpendicular magnetized layers are in an orthogonal direction that corresponds to the thickness direction.

Abstract: Provided is a near-field light transducer with a propagation edge in which the generation of defects is suppressed. The transducer is formed of a Ag alloy and comprises an edge, the edge comprising a portion to be coupled with a light in a surface plasmon mode, the edge extending from the portion to a near-field light generating end surface, and the edge being configured to propagate surface plasmon excited by the light. Further, a curvature radius of the rounded edge is set in the range from 6.25 nm to 20 nm. In the edge and its vicinity, the generation of defects such as cracking and chipping is suppressed. Thereby improved are a propagation efficiency of surface plasmon and a light use efficiency of the transducer. The Ag alloy preferably contains at least one element selected from a group of Pd, Au, Cu, Ru, Rh and Ir.

Abstract: According to an aspect of the embodiment, a packet analyzing apparatus monitors a concentration level of input and output access from an access apparatus to a disk device, specifies a data area to which the concentration level of input and output access exceeds a first threshold, and instructs a storage server to cache the data area. The packet analyzing apparatus monitors a concentration level of input and output access to a data area to which the data area is cached, and, when the concentration level of input and output access is below a second threshold, instructs the storage server to release the caching.

Abstract: Provided is a method for manufacturing a thermally-assisted magnetic recording head including a light source unit with a light source and a slider with an optical system. The method comprises steps of: adhering by suction the light source unit with a back holding jig; moving the back holding jig, then aligning a light-emission center of the light source with a light-receiving end surface of the optical system in directions within a slider back surface of the slider; bringing the light source unit into contact with the slider back surface, with a suction surface of the back holding jig tilted from the normal to the slider back surface; applying a load to a load application surface of the unit substrate by a loading means to bring a joining surface of the light source unit into conformity with the slider back surface; and bonding the light source unit and the slider. This method can improve the conformity, thereby achieving adequately strong junction and adequately high accuracy in position.

Abstract: A storage management apparatus manages a plurality of storage apparatuses connected to each other over a network in a storage system that distributes data among the storage apparatuses and stores the data therein. The storage management apparatus has a patrol process executing unit configured to execute a patrol process to confirm whether a storage area of each storage apparatus operates normally and a patrol flow controlling unit configured to control a patrol flow indicating the speed of the patrol process executed by the patrol process executing unit.

Abstract: An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 ?·?m2, an MR element that has a large variation of a resistance is obtained.

Abstract: Provided is a light source unit that is to be joined to a slider to form a thermally-assisted magnetic recording head. The light source unit comprises: a unit substrate having a source-installation surface; a light source provided in the source-installation surface and emitting thermal-assist light; and a photodetector bonded to a rear joining surface of the unit substrate in such a manner that a rear light-emission center of the light source is covered with a light-receiving surface of the photodetector. The photodetector can be sufficiently close to the light source; thus, constant feedback adjustment with high efficiency for the light output of the light source can be performed. This adjustment enables light output from the light source to be controlled in response to changes in light output due to surroundings and to changes with time to stabilize the intensity of light with which a magnetic recording medium is irradiated.

Abstract: An information processing system includes a management apparatus having a transmission preventing part preventing transmission of a predetermined usage allowing signal allowing usage of a predetermined device, in response to receiving a predetermined usage preventing instruction for the predetermined device.

Abstract: Provided is a method for manufacturing a thermally-assisted magnetic recording head in which a light source unit including a light source and a slider including an optical system are joined. The method comprises steps of: adhering by suction the light source unit with a back holding jig; bringing the light source unit into contact with a slider back surface of the slider; applying a load to a load application surface of the light source unit by a loading means to bring a joining surface of the light source unit into conformity with the slider back surface; positioning the light source unit apart from the slider, and then aligning the light source with the optical system; bringing again the light source unit into contact with the slider; and applying a load again to the load application surface to bring the joining surface into conformity with the slider back surface.

Abstract: A data allocation control program manages data allocation when data is distributively stored in a plurality of disk nodes that are shifted to a power saving mode unless access is performed for a certain time. The program produces a plurality of allocation pattern candidates each indicating the disk nodes in which the respective data are to be stored. The program calculates a no-access period expectation that represents an expected value of occurrence of a no-access period during which access is not performed to some of the disk nodes. The program selects as an allocation pattern for data reallocation, one of the plurality of produced allocation pattern candidates with the largest calculated no-access period expectation. The program instructs the disk nodes to reallocate the respective data in accordance with the selected allocation pattern.

Abstract: The present invention relates to a method of manufacturing a DFL type thin film magnetic head. The method includes laminating each of the layers from the lower magnetization control layer to the upper exchange coupling layer above the substrate; laminating an auxiliary magnetization control layer including at least a CoZrTa layer above the upper exchange coupling layer; forming at least each of the layers from the lower exchange coupling layer to the auxiliary magnetization control layer in pillar shape, and disposing the bias magnetic field application layer at an opposite position with respect to the ABS of each of the pillar shaped layers; trimming the auxiliary magnetization control layer by removing a part of the auxiliary magnetization control layer that is formed in the pillar shape, and disposing the upper shield layer such that the trimmed auxiliary magnetization control layer is at least covered.

Abstract: The invention provides a magnetoresistive device of the CCP (current perpendicular to plane) structure comprising a magnetoresistive unit sandwiched between soft magnetic shield layers with a current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer sandwiched between ferromagnetic layers. A planar framework positions the soft magnetic shield layers and comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer constructed by repeating the stacking of a multilayer unit comprising a nonmagnetic underlay layer and a high coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently directed along a closed magnetic path around the framework to form a single domain of magnetization.

Abstract: An MR element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and second ferromagnetic layers. The spacer layer includes a nonmagnetic metal layer, a first oxide semiconductor layer, and a second oxide semiconductor layer that are stacked in this order. The nonmagnetic metal layer is made of Cu, and has a thickness in the range of 0.3 to 1.5 nm. The first oxide semiconductor layer is made of a Ga oxide semiconductor, and has a thickness in the range of 0.5 to 2.0 nm. The second oxide semiconductor layer is made of a Zn oxide semiconductor, and has a thickness in the range of 0.1 to 1.0 nm.

Abstract: A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions depend upon an external magnetic field, the second magnetic layer being positioned between the first magnetic layer and the third magnetic layer, a first non-magnetic intermediate layer sandwiched between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer sandwiched between the second magnetic layer and the third magnetic layer, wherein the stack is adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack.

Abstract: A computer-readable, non-transitory medium stores therein a search program that causes a computer having access to a data block set that includes data groups respectively registered in data blocks, and a Bloom filter row of n Bloom filters that each have m bits indicating negativity in a given number of the data blocks, to execute a process that includes receiving a transposition request for the Bloom filter row; transposing the Bloom filter row into a transposed Bloom filter row of m transposed Bloom filters respectively of n bits gathered from the Bloom filters according to arrangement position in the Bloom filters; and storing the transposed Bloom filter row to a storage device, if a transposition request has been received at the receiving.

Abstract: A first shield portion located below an MR stack includes a first main shield layer, a first antiferromagnetic layer, and a first magnetization controlling layer including a first ferromagnetic layer exchange-coupled to the first antiferromagnetic layer. A second shield portion located on the MR stack includes a second main shield layer, a second antiferromagnetic layer, and a second magnetization controlling layer including a second ferromagnetic layer exchange-coupled to the second antiferromagnetic layer. The MR stack includes two free layers magnetically coupled to the two magnetization controlling layers. Only one of the two magnetization controlling layers includes a third ferromagnetic layer that is antiferromagnetically exchange-coupled to the first or second ferromagnetic layer through a nonmagnetic middle layer. The first shield portion includes an underlayer disposed on the first main shield layer, and the first antiferromagnetic layer is disposed on the underlayer.

Abstract: A microwave oscillation element of the present invention includes a lamination main part in which an oscillating layer that is a magnetization free layer and that generates a high frequency electromagnetic field by an excitation of a spin wave, a nonmagnetic intermediate layer, a polarizer layer, and a reference layer that is to be a base magnetic layer of a spin transfer due to application of current are layered in this order. The oscillating layer is made of CoIr, the polarizer layer is configured of CoCr or CoRu; and the nonmagnetic intermediate layer is configured of Cr or Ru. As a result, the efficiency of the spin injection is improved and the microwave oscillation element where the oscillation efficiency is excellent can be realized.

Abstract: Provided is a method for manufacturing a thermally-assisted magnetic recording head with “composite slider structure”. In the method, the waveguide is irradiated with a first light from opposed-to-medium surface side, and the passing first light is detected on back surface side to obtain an image of the light-receiving end surface, and a light-receiving center position is determined from the image. Further, the light source is irradiated with a second light from opposite side to joining surface, and the passing second light is detected on the joining surface side to obtain an image of the light-emitting end surface, and a light-emitting center position is determined from the image. Then, the slider and the light source unit are moved based on the determined positions of the light-receiving and light-emitting centers, aligned and bonded. As a result, alignment can be performed with high accuracy in a short process time under simplified process.

Abstract: The inventive fabrication process for magnetoresistive devices (CPP-GMR devices) involves the formation of a zinc oxide or ZnO layer that provides the intermediate layer of a spacer layer, comprising Zn film formation operation for forming a zinc or Zn layer and Zn film oxidization operation for oxidizing the zinc film after the Zn film formation operation. The Zn film formation operation is implemented such that after a multilayer substrate having a multilayer structure before the formation of the Zn film is cooled down to the temperature range of ?140° C. to ?60° C., the formation of the Zn film is set off, and the Zn film oxidization operation is implemented such that after the completion of the Zn film oxidization operation, oxidization treatment is set off at the substrate temperature range of ?120° C. to ?40° C. Thus, excelling in both flatness and crystallizability, the ZnO layer makes sure the device has high MR ratios, and can further have an area resistivity AR best suited for the device.

Abstract: A simultaneous failure occurrence degree calculation section calculates a simultaneous failure occurrence degree a value of which becomes smaller with an increase in a difference between numeric values indicative of manufacture date information on a computer which performs a process on the basis of a duplication combination management program. A combination pattern generation section then combines two of a plurality of storage apparatus and generates a plurality of combination patterns. A simultaneous failure occurrence degree adding section then calculates a total of simultaneous failure occurrence degrees corresponding to combinations of storage apparatus for each of the plurality of combination patterns. A duplication combination pattern determination section then determines that a combination pattern for which the total of simultaneous failure occurrence degrees is the smallest is a duplication combination pattern.