Abstract: The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the group consisting of Zn, Ge, V, and Cr in a content of 0.05 to 0.90 at %: there is the advantage obtained that ever higher MR ratios are achievable while holding back an increase in the area resistivity AR.

Abstract: A method for manufacturing a thermally-assisted magnetic recording head is provided, in which a light source unit including a light source and a slider including an optical system are bonded. A unit substrate is made of a material transmitting light having a predetermined wavelength, and a unit adhesion material layer that contains Sn, Sn alloy, Pb alloy or Bi alloy is formed on the light source unit and/or the slider. The manufacturing method includes: aligning the light source unit and the slider in such a way that a light from the light source can enter the optical system and the unit adhesion material layer is sandwiched therebetween; and causing a light including the predetermined wavelength to enter the unit substrate to melt the unit adhesion material layer. The unit adhesion material layer melted by the light including the predetermined wavelength can ensure high alignment accuracy as well as higher bonding strength and less change with time.

Abstract: Provided is a light source unit that is to be joined to a slider to form a thermally-assisted magnetic recording head. The light source unit comprises: a unit substrate having a source-installation surface; a light source provided in the source-installation surface and emitting thermal-assist light; and a photodetector bonded to a rear joining surface of the unit substrate in such a manner that a rear light-emission center of the light source is covered with a light-receiving surface of the photodetector. The photodetector can be sufficiently close to the light source; thus, constant feedback adjustment with high efficiency for the light output of the light source can be performed. This adjustment enables light output from the light source to be controlled in response to changes in light output due to surroundings and to changes with time to stabilize the intensity of light with which a magnetic recording medium is irradiated.

Abstract: A method for manufacturing a thermally-assisted magnetic recording head is provided, in which a light source unit including a light source and a slider including an optical system are bonded. A unit substrate is made of a material transmitting light having a predetermined wavelength, and an adhesion material layer is formed on the light source unit and/or the slider. The manufacturing method includes: aligning the light source unit and the slider in such a way that a light from the light source can enter the optical system and the adhesion material layer is sandwiched therebetween; irradiating the adhesion material layer with a light including the predetermined wavelength through the unit substrate; and bonding them. The adhesion material layer melted by the light including the predetermined wavelength and transmitted through the unit substrate can ensure high alignment accuracy as well as higher bonding strength and less change with time.

Abstract: A magnetoresistive element includes a pair of shield portions, and an MR stack and a bias magnetic field applying layer that are disposed between the pair of shield portions. The shield portions respectively include single magnetic domain portions. The MR stack includes a pair of ferromagnetic layers magnetically coupled to the pair of single magnetic domain portions, and a spacer layer disposed between the pair of ferromagnetic layers. The MR stack has a front end face, a rear end face and two side surfaces. The magnetoresistive element further includes two flux guide layers disposed between the pair of single magnetic domain portions and respectively adjacent to the two side surfaces of the MR stack. Each of the two flux guide layers has a front end face and a rear end face. The bias magnetic field applying layer has a front end face that faces the rear end face of the MR stack and the respective rear end faces of the two flux guide layers.

Abstract: A data management device includes a memory including a multistage Bloom Filter, a first stage being divided into filter parts of which the number is same as that of data blocks, and a pth stage being divided into filter parts of which a size is a combination of filter parts of a (p?1)th stage; a registration unit registering an entry of data in a filter part of the first stage corresponding to a data block where the data is stored, and the entry of the data to a filter part of the pth stage corresponding to the filter part of the first stage where the entry of the data is registered; and a search unit determining which filter part of the first stage an entry of data being searched is registered in by narrowing down filter parts from the Bloom Filter of which a stage number is large.

Abstract: A magnetic recording element has a substrate, a main pole for recording that includes an edge part positioned on an air bearing surface (ABS), a waveguide through which a laser light propagates, and a plasmon generator. The plasmon generator is positioned away from the substrate and extends to the ABS as facing a part of the waveguide. The plasmon generator has a propagation edge extending in a longitudinal direction. The propagation edge has an overlapping part overlapping the waveguide in the longitudinal direction, and a near field light generator positioned on the ABS and located in the vicinity of the edge part of the recording magnetic pole. The overlapping part of the propagation edge is coupled with the laser light propagating through the waveguide in a surface plasmon mode so that a surface plasmon is generated. The propagation edge propagates the surface plasmon generated in the overlapping part to the near field light generator.

Abstract: A magneto-resistive element includes a lower magnetic shield film and a magneto-resistive film disposed above the lower magnetic shield film. The lower magnetic shield film includes a lower shield layer and an upper shield layer. The upper shield layer is amorphous or microcrystalline, made of a NiFe or CoFe composition containing B or P, and deposited on the lower shield layer. The lower shield layer is a magnetic conductive layer which is amorphous or microcrystalline with a crystal grain size equal to or less than 20 nm.

Abstract: The thickness of the semiconductor layer forming a part of the spacer layer is set in the thickness range for a transitional area showing conduction performance halfway between ohmic conduction and semi-conductive conduction in relation to the junction of the semiconductor layer with the first nonmagnetic metal layer and the second nonmagnetic metal layer. This permits the specific resistance of the spacer layer to be greater than that of an ohmic conduction area, so that spin scattering and diffusion depending on a magnetized state increases, resulting in an increase in the MR ratio. The CPP-GMR device can also have a suitable area resistivity (AR) value. If the device can have a suitable area resistivity and a high MR ratio, it is then possible to obtain more stable output power in low current operation. The device is also lower in resistance than a TMR device, so that significant noise reductions are achievable.

Abstract: A storage-management apparatus and method that manages storage areas. The storage-management apparatus includes a collecting unit that collects valid-area-determination information items, each of which shows whether a corresponding one of the storage areas is a valid or invalid area, and timestamp information items, each of which shows that a corresponding one of the storage areas has been accessed. In accordance with the valid-area-determination information items and the timestamp information items, data from a storage area which is selected from among valid areas and whose timestamp information item is oldest is copied to a storage area which is selected from among invalid areas and whose timestamp information item is oldest, and timestamp information items and valid-area-determination information items concerning the storage area from which the data is copied and concerning the storage area to which the data is copied is updated.

Abstract: The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, having a magneto-resistive effect unit, and a first shield layer and a second shield layer located and formed such that the magneto-resistive effect unit is sandwiched between them, with a sense current applied in a stacking direction.

Abstract: The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer which are located and formed such that the magnetoresistive unit is sandwiched between them with a sense current applied in a stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is sandwiched between them. The first shield layer and the second shield layer are each controlled by magnetization direction control means in terms of magnetization direction to create an antiparallel magnetization state where their magnetizations are in opposite directions.

Abstract: A computer in a disk node executes a data management program. A deduplication-eligible data unit detection module detects a data unit whose deduplication grace period after last write time has expired. A deduplication address fetch module interacts with an index server to obtain a deduplication address associated with a unique value of data stored in a constituent storage space allocated to the data unit that is found to be deduplication-eligible. A constituent storage space deallocation module stores the obtained deduplication address in a data unit record memory, together with information indicating the detected data unit. Simultaneously a constituent storage space deallocation module releases the allocated constituent storage space from the detected data unit.

Abstract: A method for manufacturing a thin film magnetic head includes a step for forming an MR layered body; a step for forming a first sacrificial layer made of material removable by wet etching, and subsequently, forming a cap layer on the upper surface of the first sacrificial layer; further, a step for patterning the MR layered body and the cap layer and then filling part of the removed areas of the MR layered body and the cap layer with a bias magnetic layer and the remaining with insulating layers; a step for removing the cap layer by dry etching and, subsequently, removing the first sacrificial layer by wet etching; and a step for forming a second shield layer above the MR layered body and the bias magnetic layer.

Abstract: An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located in the outer surface of the MR stack. The magnetoresistive element further includes a layered film that touches the periphery of the spacer layer. The spacer layer includes a semiconductor layer formed using an oxide semiconductor as a material. The layered film includes a first layer, a second layer, and a third layer stacked in this order. The first layer is formed of the same material as the semiconductor layer, and touches the periphery of the spacer layer. The second layer is a metal layer that forms a Schottky barrier at the interface between the first layer and the second layer. The third layer is an insulating layer.

Abstract: The present invention relates to a method of manufacturing a DFL type thin film magnetic head. The method includes laminating each of the layers from the lower magnetization control layer to the upper exchange coupling layer above the substrate; laminating an auxiliary magnetization control layer including at least a CoZrTa layer above the upper exchange coupling layer; forming at least each of the layers from the lower exchange coupling layer to the auxiliary magnetization control layer in pillar shape, and disposing the bias magnetic field application layer at an opposite position with respect to the ABS of each of the pillar shaped layers; trimming the auxiliary magnetization control layer by removing a part of the auxiliary magnetization control layer that is formed in the pillar shape, and disposing the upper shield layer such that the trimmed auxiliary magnetization control layer is at least covered.

Abstract: A non-transitory computer-readable recording medium stores therein a charge calculating program that causes a computer that manages a database of different data items to execute recording for each data item, information indicating the number of clients that receive the data item; extracting from the information recorded at the recording and for each data item to be received by a given client, information indicating the number of clients receiving the data item; calculating charges for the given client, based on the extracted information; and outputting the calculated charges.

Abstract: A magnetic thin film has a pinned layer whose magnetization direction is fixed with respect to an external magnetic field, a free layer whose magnetization direction is changed according to the external magnetic field, and a spacer layer which is sandwiched between said pinned layer and said free layer. Sense current is configured to flow in a direction that is perpendicular to film surfaces of said pinned layer, said spacer layer, and said free layer. Said spacer layer has a CuZn metal alloy which includes an oxide region, said oxide region consisting of an oxide of any of Al, Si, Cr, Ti, Hf, Zr, Zn, and Mg.

Abstract: A giant magneto-resistive effect device having a CPP structure including a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with said spacer layer interposed between them. The free layer functions such that its magnetization direction changes depending on an external magnetic field. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material. A semiconductor oxide layer is interposed between them. The semiconductor oxide layer forming a part of the spacer layer comprises zinc oxide as a main ingredient.

Abstract: An MR element includes a stack of layers including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The stack of layers has an outer surface, and the spacer layer has a periphery located in the outer surface of the stack of layers. The magnetoresistive element further includes an insulating film that touches the periphery of the spacer layer. The spacer layer includes a layer made of an oxide semiconductor composed of an oxide of a first metal. The insulating film includes a contact film that touches the periphery of the spacer layer and that is made of an oxide of a second metal having a Pauling electronegativity lower than that of the first metal by 0.1 or more.