Abstract: A light-emitting layer of a light-emitting element contains halogen ligands and organic ligands coordinated to each of quantum dots. The light-emitting layer includes: a first region toward a hole-transport layer; and a second region toward an electron-transport layer. In the first region, a concentration of the halogen ligands is higher than a concentration of the organic ligands, and, in the second region, the concentration of the halogen ligands is lower than the concentration of the organic ligands.

Abstract: A display device comprises: a display region having a plurality of pixels; and a frame region, the display region including: a thin-film transistor layer; a light-emitting-element layer provided above the thin-film transistor layer; and a sealing layer provided above the light-emitting-element layer, the light-emitting-element layer including: a first electrode; a second electrode; a light-emitting layer provided between the first electrode and the second electrode; and an electron-transport layer provided between the light-emitting layer and the second electrode, and the electron-transport layer containing: nanoparticles of metal oxide; and a binding resin.

Abstract: A light-emitting element includes: an electron transport layer; a hole transport layer; and a light-emitting layer between the electron transport layer and the hole transport layer, the light-emitting layer including: quantum dots; and ligands coordinated to the quantum dots, wherein the ligands in the light-emitting layer have a lower concentration on an electron transport layer side of the light-emitting layer than on a hole transport layer side of the light-emitting layer.

Abstract: A light-emitting element includes: a first electrode; a second electrode; a quantum dot layer including layered quantum dots between the first electrode and the second electrode; and a hole transport layer formed of LaNiO3 between the quantum dot layer and the first electrode.

Abstract: This light-emitting device includes: a light-emitting diode including a light-emitting layer of quantum dots or an organic light-emitting material; and a protection diode located adjacent to, and connected in parallel with, the light-emitting diode, wherein the protection diode is operated in reverse bias to protect the light-emitting diode.

Abstract: A light-emitting element includes a hole transport layer between a light-emitting layer and an anode, the hole transport layer containing either a metal oxide of (NiO)1-x(LaNiO3)x (composition formula 1) or (CuyO)1-x(LaNiO3)x (composition formula 2), where 0<x?1 and 1?y?2.

Abstract: A light-emitting element includes: an anode; a cathode; a quantum-dot layer provided between the anode and the cathode, and containing quantum dots; and an electron-transport layer provided between the cathode and the quantum-dot layer, and placed in contact with the quantum-dot layer. In an interface between the quantum-dot layer and the electron-transport layer, the quantum-dot layer is greater in ionization potential than the electron-transport layer, and the quantum-dot layer is greater in bandgap than the electron-transport layer.

Abstract: A light-emitting element includes a positive electrode, a negative electrode, a quantum dot layer provided between the positive electrode and the negative electrode and including quantum dots, and a first electron transport layer provided in contact with the quantum dot layer between the quantum dot layer and the negative electrode and containing a compound having a composition of ZnMO, constituent elements M in the composition being an element of at least one of Co, Rh, and Ir.

Abstract: A light-emitting element includes a first electrode, a light-emitting layer, a first DLC layer formed from diamond-like carbon, a second electrode, and a second DLC layer formed from DLC, wherein the first electrode, the light-emitting layer, the first DLC layer, the second electrode, and the second DLC layer are layered in this order.

Abstract: A light-emitting element is provided to improve light emission efficiency of a light-emitting element. The light-emitting element includes: a first electrode; a second electrode; a quantum dot layer provided between the first electrode and the second electrode, in which quantum dots are layered; and a hole-transport layer provided between the quantum dot layer and the first electrode, wherein the hole-transport layer includes a plurality of layers each containing a different material, the plurality of layers of the hole-transport layer each have an ionization potential increasing from the first electrode toward the quantum dot layer, and, among the plurality of layers of the hole-transport layer, a layer in contact with the quantum dot layer is higher in ionization potential than the quantum dot layer.

Abstract: A light-emitting element is provided with an anode, a light-emitting layer including quantum dots, and a cathode. The light-emitting element includes: an electron transport layer provided between the cathode and the light-emitting layer; and a hole tunneling insulating layer provided between the anode and the light-emitting layer and in contact with the anode and the light-emitting layer.

Abstract: A technique is provided that improves the efficiency of electron and hole injection in a light-emitting element containing quantum dots in a light-emitting layer thereof and hence improves the luminous efficiency thereof The light-emitting element includes on a substrate: a positive electrode; a negative electrode; a quantum-dot layer between the positive electrode and the negative electrode, the quantum-dot layer including a stack of a plurality of luminous, first quantum dots and a plurality of non-luminous, second quantum dots; a hole transport layer between the positive electrode and the quantum-dot layer; and an electron transport layer between the negative electrode and the quantum-dot layer, the plurality of second quantum dots being more numerous in an electron transport layer side than in a hole transport layer side.

Abstract: The light-emitting device includes, between an anode electrode and a cathode electrode, a light-emitting layer, a hole transport layer, and an electron transport layer. The light-emitting layer includes quantum dots configured to emit light as a result of combination of positive holes and electrons. The electron transport layer includes a metal oxide, and an energy level of a lower end of a conduction band of the metal oxide is less than or equal to an energy level of a lower end of a conduction band of the quantum dots.

Abstract: A light-emitting element includes: an anode; a hole transport layer of a p-type semiconductor; a n-type semiconductor layer containing a Group 13 element; a light-emitting layer containing quantum dots; an electron transport layer; and a cathode, arranged in this order.

Abstract: A light-emitting element includes: a first electrode; a second electrode; a quantum dot layer provided between the first electrode and the second electrode, and containing quantum dots; and a hole-transport layer provided between the quantum dot layer and the first electrode, and containing a compound ZnM2O4 (where an element M is a metal element).

Abstract: A light-emitting element is provided to improve light emission efficiency of a light-emitting element. The light-emitting element includes: a first electrode; a second electrode; a quantum dot layer provided between the first electrode and the second electrode, in which quantum dots are layered; and a hole-transport layer provided between the quantum dot layer and the first electrode, wherein the hole-transport layer includes a plurality of layers each containing a different material, the plurality of layers of the hole-transport layer each have an ionization potential increasing from the first electrode toward the quantum dot layer, and, among the plurality of layers of the hole-transport layer, a layer in contact with the quantum dot layer is higher in ionization potential than the quantum dot layer.

Abstract: A light-emitting element includes: a first electrode; a second electrode; a quantum dot layer including layered quantum dots between the first electrode and the second electrode; and a hole transport layer formed of LaNiO3 between the quantum dot layer and the first electrode.

Abstract: The light-emitting device includes, between an anode electrode and a cathode electrode, a light-emitting layer, a hole transport layer, and an electron transport layer. The light-emitting layer includes quantum dots configured to emit light as a result of combination of positive holes and electrons. The electron transport layer includes a metal oxide, and an energy level of a lower end of a conduction band of the metal oxide is less than or equal to an energy level of a lower end of a conduction band of the quantum dots.

Abstract: A vertically structured, aluminum nitride-based semiconductor deep ultraviolet light-emitting device is provided that exhibits a high light emission efficiency and an improved yield. The aluminum nitride-based semiconductor deep ultraviolet light-emitting device includes: a conductive support substrate; a porous metal film having a conductive macroporous structure with a pore rate of from 10% to 50% inclusive; and an aluminum nitride-based semiconductor layer structural body with a light-emitting layer, the conductive support substrate and the aluminum nitride-based semiconductor layer structural body being bonded with the porous metal film interposed therebetween for electrical connection, wherein the aluminum nitride-based semiconductor deep ultraviolet light-emitting device has an emission peak wavelength of from 220 nm to 300 nm inclusive.

Abstract: A vertically structured, aluminum nitride-based semiconductor deep ultraviolet light-emitting device is provided that exhibits a high light emission efficiency and an improved yield. The aluminum nitride-based semiconductor deep ultraviolet light-emitting device includes: a conductive support substrate; a porous metal film having a conductive macroporous structure with a pore rate of from 10% to 50% inclusive; and an aluminum nitride-based semiconductor layer structural body with a light-emitting layer, the conductive support substrate and the aluminum nitride-based semiconductor layer structural body being bonded with the porous metal film interposed therebetween for electrical connection, wherein the aluminum nitride-based semiconductor deep ultraviolet light-emitting device has an emission peak wavelength of from 220 nm to 300 nm inclusive.