Patents by Inventor Yoshihiro Umezawa

Yoshihiro Umezawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11348768
    Abstract: A plasma processing apparatus includes a processing container; a placement table provided in the processing container and including a placement region on which a workpiece is placed for a plasma processing; a baffle structure that defines a first space and a second space, and including a first member and at least one second member; a gas supply portion connected to the first space; a first pressure gauge connected to the first space; an exhaust apparatus connected to the second space; a second pressure gauge connected to the second space; a driving mechanism that moves the at least one second member in a vertical direction; a displacement gauge configured to measure a position or a distance of the second member; and a controller that controls the driving mechanism. The controller controls the driving mechanism such that a pressure of the first space becomes a predetermined pressure designated by a recipe.
    Type: Grant
    Filed: May 7, 2020
    Date of Patent: May 31, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Mayo Uda
  • Publication number: 20220005672
    Abstract: A plasma processing apparatus includes a chamber; a dielectric window, a first antenna for generating plasma within the chamber, and a first power supply for supplying RF power to the first antenna. Power is fed to a first line constituting the first antenna from the first power supply and the vicinity of the midpoint is grounded so that the first antenna resonates at a wavelength that is ½ of a wavelength of the RF power. The first antenna includes a first portion close to a first end with reference to a first position separated from the first end by a first distance toward a central portion of the first line, a second portion close to a second end with reference to a second position separated from the second end by a second distance toward the central portion, and a first intermediate portion between the first and second portions.
    Type: Application
    Filed: June 29, 2021
    Publication date: January 6, 2022
    Inventors: Takehisa SAITO, Yoshihiro UMEZAWA, Naoki FUJIWARA
  • Publication number: 20210375597
    Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting cable and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.
    Type: Application
    Filed: August 13, 2021
    Publication date: December 2, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA
  • Publication number: 20210320009
    Abstract: A plasma processing apparatus includes a baffle plate, a shutter, and a driving device. The baffle plate has a cylindrical shape, and has a plurality of through holes formed in a sidewall thereof. The shutter has a cylindrical shape and is provided around the baffle plate to be movable in an axial direction of the baffle plate along the sidewall of the baffle plate. The driving device moves the shutter along the sidewall of the baffle plate. The plurality of through holes are disposed in the sidewall of the baffle plate so that synthesized conductance of the through holes, which are not covered by the shutter, is increased with respect to a movement amount of the shutter as the shutter is moved downward.
    Type: Application
    Filed: June 24, 2021
    Publication date: October 14, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA
  • Patent number: 11101114
    Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.
    Type: Grant
    Filed: June 5, 2015
    Date of Patent: August 24, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima
  • Patent number: 10950467
    Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: March 16, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Mayo Uda, Kenichi Shimono
  • Publication number: 20210020418
    Abstract: A measurement part controls power supplied to a heater such that a temperature of the heater becomes constant by using a heater controller, and measures the supplied power in an unignited state in which plasma is not ignited and a transient state in which the power supplied to the heater decreases after plasma is ignited. A parameter calculator performs fitting on a calculation model, which includes a heat input amount from the plasma as a parameter, for calculating the power supplied in the transient state by using the power supplied in the unignited state and the transient state and measured by the measurement part, and calculates the heat input amount. An output part configured to output information based on the heat input amount calculated by the parameter calculator.
    Type: Application
    Filed: June 17, 2019
    Publication date: January 21, 2021
    Inventors: Daisuke HAYASHI, Yoshihiro UMEZAWA, Shinsuke OKA
  • Publication number: 20200266034
    Abstract: A plasma processing apparatus includes a processing container; a placement table provided in the processing container and including a placement region on which a workpiece is placed for a plasma processing; a baffle structure that defines a first space and a second space, and including a first member and at least one second member; a gas supply portion connected to the first space; a first pressure gauge connected to the first space; an exhaust apparatus connected to the second space; a second pressure gauge connected to the second space; a driving mechanism that moves the at least one second member in a vertical direction; a displacement gauge configured to measure a position or a distance of the second member; and a controller that controls the driving mechanism. The controller controls the driving mechanism such that a pressure of the first space becomes a predetermined pressure designated by a recipe.
    Type: Application
    Filed: May 7, 2020
    Publication date: August 20, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA
  • Patent number: 10685816
    Abstract: A method MT includes etching a wafer W using plasma generated in a processing container. The etching includes a process of inclining and rotating a holding structure holding the wafer W during execution of the etching and the process successively creating a plurality of inclined rotation states RT(?, t) with respect to the holding structure. In the inclined rotation states, the wafer W is rotated about a central axis of the wafer W over a predetermined process time while maintaining a state where the central axis is inclined with respect to a reference axis of the processing container which is in the same plane as the central axis. A combination of a value ? of an inclination angle AN of the central axis with respect to the reference axis and the process time t differs for each of the plurality of inclined rotation states.
    Type: Grant
    Filed: November 11, 2016
    Date of Patent: June 16, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshihiro Umezawa, Jun Sato, Kiyoshi Maeda, Mitsunori Ohata, Kazuya Matsumoto
  • Patent number: 10636683
    Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: April 28, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Mayo Uda, Kenichi Shimono
  • Patent number: 10510514
    Abstract: According to an aspect, a gas supply mechanism for supplying a gas to a semiconductor manufacturing apparatus is provided. The gas supply mechanism includes a pipe connecting a gas source and the semiconductor manufacturing apparatus to each other, and a valve which is provided on the pipe. The valve includes a plate rotatable about an axis, the axis extending in a plate thickness direction, and a housing provided along the plate without contacting the plate to accommodate the plate, the housing providing a gas supply path along with the pipe. A through hole is formed in the plate, the through hole penetrating the plate at a position on a circle which extends around the axis and intersects the gas supply path.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: December 17, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Mayo Uda, Takashi Kubo
  • Publication number: 20190131136
    Abstract: A plasma processing apparatus includes a baffle plate, a shutter, and a driving device. The baffle plate has a cylindrical shape, and has a plurality of through holes formed in a sidewall thereof. The shutter has a cylindrical shape and is provided around the baffle plate to be movable in an axial direction of the baffle plate along the sidewall of the baffle plate. The driving device moves the shutter along the sidewall of the baffle plate. The plurality of through holes are disposed in the sidewall of the baffle plate so that synthesized conductance of the through holes, which are not covered by the shutter, is increased with respect to a movement amount of the shutter as the shutter is moved downward.
    Type: Application
    Filed: December 2, 2016
    Publication date: May 2, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA
  • Patent number: 10204766
    Abstract: Disclosed is an ion beam irradiation apparatus including: a plurality of plate-like grid electrodes arranged in a beam irradiation direction so as to overlap each other and each having a plurality of apertures; a power supply unit that applies a voltage to each of the grid electrodes; and a controller that controls the voltage applied to each of the grid electrodes by the power supply unit. The plurality of grid electrodes include first to fourth grid electrodes. Central axes of apertures of the first grid electrode and apertures of the second grid electrode are coaxial along the beam irradiation direction, and a central axis of apertures of the third grid electrode is offset in a direction orthogonal to the beam irradiation direction with respect to the central axes of the apertures of the first grid electrode and the second grid electrode.
    Type: Grant
    Filed: October 17, 2017
    Date of Patent: February 12, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshihiro Umezawa, Mitsunori Ohata, Shinji Nagamachi, Kenichi Shimono
  • Patent number: 10192774
    Abstract: A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: January 29, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Koichi Nagakura
  • Publication number: 20180337025
    Abstract: A method MT includes etching a wafer W using plasma generated in a processing container. The etching includes a process of inclining and rotating a holding structure holding the wafer W during execution of the etching and the process successively creating a plurality of inclined rotation states RT(?, t) with respect to the holding structure. In the inclined rotation states, the wafer W is rotated about a central axis of the wafer W over a predetermined process time while maintaining a state where the central axis is inclined with respect to a reference axis of the processing container which is in the same plane as the central axis. A combination of a value ? of an inclination angle AN of the central axis with respect to the reference axis and the process time t differs for each of the plurality of inclined rotation states.
    Type: Application
    Filed: November 11, 2016
    Publication date: November 22, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yoshihiro UMEZAWA, Jun SATO, Kiyoshi MAEDA, Mitsunori OHATA, Kazuya MATSUMOTO
  • Publication number: 20180108516
    Abstract: Disclosed is an ion beam irradiation apparatus including: a plurality of plate-like grid electrodes arranged in a beam irradiation direction so as to overlap each other and each having a plurality of apertures; a power supply unit that applies a voltage to each of the grid electrodes; and a controller that controls the voltage applied to each of the grid electrodes by the power supply unit. The plurality of grid electrodes include first to fourth grid electrodes. Central axes of apertures of the first grid electrode and apertures of the second grid electrode are coaxial along the beam irradiation direction, and a central axis of apertures of the third grid electrode is offset in a direction orthogonal to the beam irradiation direction with respect to the central axes of the apertures of the first grid electrode and the second grid electrode.
    Type: Application
    Filed: October 17, 2017
    Publication date: April 19, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yoshihiro UMEZAWA, Mitsunori OHATA, Shinji NAGAMACHI, Kenichi SHIMONO
  • Publication number: 20170301568
    Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
    Type: Application
    Filed: April 11, 2017
    Publication date: October 19, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA, Mayo UDA, Kenichi SHIMONO
  • Publication number: 20170301518
    Abstract: According to an aspect, a gas supply mechanism for supplying a gas to a semiconductor manufacturing apparatus is provided. The gas supply mechanism includes a pipe connecting a gas source and the semiconductor manufacturing apparatus to each other, and a valve which is provided on the pipe. The valve includes a plate rotatable about an axis, the axis extending in a plate thickness direction, and a housing provided along the plate without contacting the plate to accommodate the plate, the housing providing a gas supply path along with the pipe. A through hole is formed in the plate, the through hole penetrating the plate at a position on a circle which extends around the axis and intersects the gas supply path.
    Type: Application
    Filed: September 24, 2015
    Publication date: October 19, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Mayo UDA, Takashi KUBO
  • Publication number: 20170301579
    Abstract: A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.
    Type: Application
    Filed: September 24, 2015
    Publication date: October 19, 2017
    Inventors: Yuki Hosaka, Yoshihiro Umezawa, Toshiki Nakajima, Koichi Nagakura
  • Publication number: 20170092513
    Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.
    Type: Application
    Filed: June 5, 2015
    Publication date: March 30, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yuki HOSAKA, Yoshihiro UMEZAWA, Toshiki NAKAJIMA