Patents by Inventor Yoshihiro Yokota

Yoshihiro Yokota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210039680
    Abstract: A driving handover control device includes a memory and a processor coupled to the memory. In a case in which driving is handed over from a first state in which a vehicle is traveling by remote driving by a first driver from outside the vehicle or by occupant driving by the first driver in the vehicle, to a second state in which the vehicle travels by the remote driving or the occupant driving by a second driver who is different from the first driver, the processor is configured to cause transition from the first state to a third state in which the vehicle is caused to travel by automatic driving, and then cause transition from the third state to the second state.
    Type: Application
    Filed: July 20, 2020
    Publication date: February 11, 2021
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Toshiki KINDO, Yuji SUZUKI, Mutsumi MATSUURA, Tomoaki MIYAZAWA, Shunsuke TANIMORI, Kuniaki JINNAI, Kohta TARAO, Yoshihiro MAEKAWA, Hiroki AWANO, Tae SUGIMURA, Tomoyuki KURIYAMA, Yusuke YOKOTA, Makoto MATSUSHITA, Yasuki NAKAGAWA, Atsushi HANAWA
  • Patent number: 10800467
    Abstract: A door handle that has an elongated shape and is mounted onto a vehicle door in a state where a longitudinal direction thereof is aligned with a vehicle front-and-rear direction, the door handle includes: a front part and a rear part each of which has a connection surface to be connected to the vehicle door; and a grip part provided between the front part and the rear part, wherein a rear end of the front part protrudes outward in the longitudinal direction more than the front end thereof on the connection surface of the front part, and a curvature radius of a protruding portion of the rear end of the front part on the connection surface of the front part is R4 or less.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: October 13, 2020
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Yuichi Yokota, Akihide Fukuyama, Shigeru Sato, Koshi Yamada, Hajime Ichikawa, Yoshihiro Fujiura
  • Publication number: 20190225284
    Abstract: A door handle that has an elongated shape and is mounted onto a vehicle door in a state where a longitudinal direction thereof is aligned with a vehicle front-and-rear direction, the door handle includes: a front part and a rear part each of which has a connection surface to be connected to the vehicle door; and a grip part provided between the front part and the rear part, wherein a rear end of the front part protrudes outward in the longitudinal direction more than the front end thereof on the connection surface of the front part, and a curvature radius of a protruding portion of the rear end of the front part on the connection surface of the front part is R4 or less.
    Type: Application
    Filed: November 26, 2018
    Publication date: July 25, 2019
    Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Yuichi YOKOTA, Akihide FUKUYAMA, Shigeru SATO, Koshi YAMADA, Hajime ICHIKAWA, Yoshihiro FUJIURA
  • Patent number: 10347877
    Abstract: Presented is battery packaging material which is made of a laminate including, as the essentials, a base material layer, a metal layer and a sealant layer in this order. When a product obtained by packaging a battery element with the packaging material in a hermetically sealed state through heat sealing is heated, the packaging material delaminates at least at a part of the interface between the metal layer and the outside surface of the sealant layer with the hermetically sealed state being kept, and thereafter works so as to make the product unsealed.
    Type: Grant
    Filed: February 5, 2014
    Date of Patent: July 9, 2019
    Assignee: DAI NIPPON PRINTING CO., LTD.
    Inventors: Hiroki Douke, Yoshihiro Shinohara, Tsuyoshi Suzuki, Rikiya Yamashita, Kazuhiko Yokota, Masakazu Kandori, Yaichiro Hori, Tetsuya Ojiri
  • Patent number: 10274422
    Abstract: The present invention is one adapted to correct the effect of a second gas component on a first gas component in real time even when the concentration of the second gas component as a coexistent component varies every moment, and includes: a first gas analysis part adapted to measure the concentration of the first gas component contained in sample gas; a second gas analysis part adapted to measure the concentration of the second gas component contained in the sample gas; a correction coefficient storage part adapted to store a correction coefficient for correcting the effect of the second gas component on the first gas component; and a concentration correction part adapted to correct the first gas component concentration on the basis of the correction coefficient, the second gas component concentration of calibration gas used for calibrating the first gas analysis part, and the second gas component concentration.
    Type: Grant
    Filed: November 20, 2017
    Date of Patent: April 30, 2019
    Assignee: HORIBA, LTD.
    Inventor: Yoshihiro Yokota
  • Publication number: 20180149586
    Abstract: The present invention is one adapted to correct the effect of a second gas component on a first gas component in real time even when the concentration of the second gas component as a coexistent component varies every moment, and includes: a first gas analysis part adapted to measure the concentration of the first gas component contained in sample gas; a second gas analysis part adapted to measure the concentration of the second gas component contained in the sample gas; a correction coefficient storage part adapted to store a correction coefficient for correcting the effect of the second gas component on the first gas component; and a concentration correction part adapted to correct the first gas component concentration on the basis of the correction coefficient, the second gas component concentration of calibration gas used for calibrating the first gas analysis part, and the second gas component concentration.
    Type: Application
    Filed: November 20, 2017
    Publication date: May 31, 2018
    Applicant: HORIBA, Ltd.
    Inventor: Yoshihiro YOKOTA
  • Patent number: 9459058
    Abstract: This heat sink has bonded on one surface a member to be bonded, and has a cooling member in contact with the other surface. The heat sink is provided with a metal plate having a thermal expansion coefficient larger than that of the member to be bonded, and the metal plate is provided with a center portion where the member to be bonded is bonded, and a plurality of linear peripheral slits formed in a whirl-like radial manner such that the linear peripheral slits surround the center portion.
    Type: Grant
    Filed: July 26, 2012
    Date of Patent: October 4, 2016
    Assignee: Kobe Steel, Ltd.
    Inventors: Yoshihiro Yokota, Kenichi Inoue, Koji Inoue, Kyoji Zaitsu, Koichi Makii
  • Patent number: 9153536
    Abstract: Provided is an Al alloy film for semiconductor devices, which has excellent heat resistance and is suppressed in the generation of hillocks even in cases where the Al alloy film is exposed to high temperatures, and which has low electrical resistivity as a film. The present invention relates to an Al alloy film for semiconductor devices, which is characterized by satisfying all of the features (a)-(c) described below after being subjected to a heat treatment wherein the Al alloy film is held at 500° C. for 30 minutes and by having a film thickness from 500 nm to 5 ?m. (a) The maximum grain diameter of the Al matrix is 800 nm or less. (b) The hillock density is less than 1×109 pieces/m2. (c) The electrical resistivity is 10 ??cm or less.
    Type: Grant
    Filed: May 16, 2012
    Date of Patent: October 6, 2015
    Assignee: Kobe Steel, Ltd.
    Inventors: Hiroyuki Okuno, Toshihiro Kugimiya, Yoshihiro Yokota, Takeaki Maeda
  • Publication number: 20150171016
    Abstract: Provided is an Al alloy film for semiconductor devices, which has excellent heat resistance and is suppressed in the generation of hillocks even in cases where the Al alloy film is exposed to high temperatures, and which has low electrical resistivity as a film. The present invention relates to an Al alloy film for semiconductor devices, which is characterized by satisfying all of the features (a)-(c) described below after being subjected to a heat treatment wherein the Al alloy film is held at 500° C. for 30 minutes and by having a film thickness from 500 nm to 5 ?m. (a) The maximum grain diameter of the Al matrix is 800 nm or less. (b) The hillock density is less than 1×109 pieces/m2. (c) The electrical resistivity is 10 ??cm or less.
    Type: Application
    Filed: May 16, 2012
    Publication date: June 18, 2015
    Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
    Inventors: Hiroyuki Okuno, Toshihiro Kugimiya, Yoshihiro Yokota, Takeaki Maeda
  • Publication number: 20140224467
    Abstract: This heat sink has bonded on one surface a member to be bonded, and has a cooling member in contact with the other surface. The heat sink is provided with a metal plate having a thermal expansion coefficient larger than that of the member to be bonded, and the metal plate is provided with a center portion where the member to be bonded is bonded, and a plurality of linear peripheral slits formed in a whirl-like radial manner such that the linear peripheral slits surround the center portion.
    Type: Application
    Filed: July 26, 2012
    Publication date: August 14, 2014
    Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)
    Inventors: Yoshihiro Yokota, Kenichi Inoue, Koji Inoue, Kyoji Zaitsu, Koichi Makii
  • Publication number: 20140151886
    Abstract: Provided is a semiconductor element in which atomic interdiffusion between a semiconductor region and an electrode is suppressed and increase in the contact resistance is suppressed even in cases where the semiconductor element is exposed to high temperatures during the production processes or the like. A semiconductor element of the present invention is provided with: a semiconductor region that contains silicon; an electrode that contains aluminum; and a diffusion barrier layer that is interposed between the semiconductor region and the electrode and contains germanium. The germanium content in at least a part of the diffusion barrier layer is 4 at % or more.
    Type: Application
    Filed: July 19, 2012
    Publication date: June 5, 2014
    Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel, Ltd.)
    Inventors: Takeaki Maeda, Hiroyuki Okuno, Yoshihiro Yokota
  • Patent number: 8535997
    Abstract: Provided is a direct contact technology by which a barrier metal layer between a Cu alloy wiring composed of pure Cu or a Cu alloy and a semiconductor layer can be eliminated, and the Cu alloy wiring can be directly and surely connected to the semiconductor layer within a wide process margin. The wiring structure is provided with the semiconductor layer and the Cu alloy film composed of pure Cu or the Cu alloy on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer and the Cu alloy film. The laminated structure is composed of an (N, C, F) layer, which contains at least one element selected from among a group composed of nitrogen, carbon and fluorine, and a Cu—Si diffusion layer, which contains Cu and Si, in this order from the substrate side. Furthermore, at least the one element selected from among the group composed of nitrogen, carbon and fluorine is bonded to Si contained in the semiconductor layer.
    Type: Grant
    Filed: July 3, 2009
    Date of Patent: September 17, 2013
    Assignee: Kobe Steel, Ltd.
    Inventors: Nobuyuki Kawakami, Shinya Fukuma, Aya Miki, Mototaka Ochi, Shinya Morita, Yoshihiro Yokota, Hiroshi Goto
  • Patent number: 8299614
    Abstract: An interconnection structure, containing a substrate and, in the following order from a side of the substrate: (I) a semiconductor layer; (II) a multilayer structure including (II-a) a first layer containing at least one type of an element selected from the group consisting of nitrogen, carbon and fluorine and (II-b) an Al—Si diffusion layer containing Al and Si; and (III) an Al film of pure Al or an Al alloy, wherein the at least one of element selected from the group consisting of nitrogen, carbon, and fluorine in the first layer is bonded with Si contained in the semiconductor layer.
    Type: Grant
    Filed: April 17, 2009
    Date of Patent: October 30, 2012
    Assignee: Kobe Steel, Ltd.
    Inventors: Nobuyuki Kawakami, Mototaka Ochi, Aya Miki, Shinya Morita, Yoshihiro Yokota, Shinya Fukuma, Hiroshi Goto
  • Publication number: 20120237645
    Abstract: A process for preparation of an alcoholic beverage produced by mixing an alcoholic beverage base mix containing alcohol and at least one type of water-soluble substance with ice pieces in a proportion of 20:80 to 80:20, and conducting aeration, agitation and cooling so that the volume fraction of contained gas is in the range of 1 to 150% and the mixing temperature is lower than ?1° C., thereby obtaining a gas-containing matter having an alcohol concentration of ?1.0 vol. % and being fluid at ?15° to ?2° C., wherein fine ice pieces of 0.06 to 0.8 mm major axis length are present in an amount of at least 80 wt. % based on the total weight so that at least part of the fine ice pieces are sensed.
    Type: Application
    Filed: June 1, 2012
    Publication date: September 20, 2012
    Applicant: LOTTE CO., LTD.
    Inventors: Yutaka Masuda, Yoshihiro Yokota, Masakatsu Usui, Keiko Seki
  • Patent number: 8001854
    Abstract: A soil for metal analysis having a high water content of 40% or more is dried up to 20% or less in water content within a short period of time. A filter paper 5 is laid over an inner bottom surface plate 2 of a nutsche 1. Powder of a super absorbent polymer 6 is uniformly spread (filled) on an upper surface thereof. Further, another filter paper 7 is laid thereon. A soil sample with a high water content is packed on an upper surface thereof, thereupon carrying out predrying to approximately 30% in water content. After that, the predried soil sample is added with ethanol, stirred and received in a receiving pan 38. The receiving pan 38 is arranged in a drying chamber 37. Water is supplied by a syringe 43 to a reaction vessel 42 having been filled with calcium oxide or barium oxide, thereby reacting calcium oxide or barium oxide with water. The receiving pan 38 is heated by a reaction heat generated at that moment, thereupon carrying out postdrying to make the water content 20% or less.
    Type: Grant
    Filed: February 29, 2008
    Date of Patent: August 23, 2011
    Assignees: Railway Technical Research Institute, HORIBA, Ltd.
    Inventors: Hiroyuki Sakai, Shintaro Komatani, Yoshihiro Yokota
  • Publication number: 20110121297
    Abstract: Provided is a direct contact technology by which a barrier metal layer between a Cu alloy wiring composed of pure Cu or a Cu alloy and a semiconductor layer can be eliminated, and the Cu alloy wiring can be directly and surely connected to the semiconductor layer within a wide process margin. The wiring structure is provided with the semiconductor layer and the Cu alloy film composed of pure Cu or the Cu alloy on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer and the Cu alloy film. The laminated structure is composed of an (N, C, F) layer, which contains at least one element selected from among a group composed of nitrogen, carbon and fluorine, and a Cu—Si diffusion layer, which contains Cu and Si, in this order from the substrate side. Furthermore, at least the one element selected from among the group composed of nitrogen, carbon and fluorine is bonded to Si contained in the semiconductor layer.
    Type: Application
    Filed: July 3, 2009
    Publication date: May 26, 2011
    Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
    Inventors: Nobuyuki Kawakami, Shinya Fukuma, Aya Miki, Mototaka Ochi, Shinya Morita, Yoshihiro Yokota, Hiroshi Goto
  • Publication number: 20110024761
    Abstract: Provided is a direct contact technology by which a barrier metal layer between an Al alloy interconnection composed of pure Al or an Al alloy and a semiconductor layer can be eliminated and the Al alloy interconnection can be directly and surely connected to the semiconductor layer within a wide process margin. In an interconnection structure, the semiconductor layer, and the Al alloy film composed of the pure Al or the Al alloy are provided on the substrate in this order from the substrate side. A multilayer structure of an (N, C, F) layer containing at least one type of an element selected from among a group composed of nitrogen, carbon and fluorine, and an Al—Si diffusion layer containing Al and Si is included in this order from the substrate side, between the semiconductor layer and the Al alloy film. At least the one type of the element, i.e., nitrogen, carbon or fluorine contained in the (N, C, F) layer is bonded with Si contained in the semiconductor layer.
    Type: Application
    Filed: April 17, 2009
    Publication date: February 3, 2011
    Applicant: Kabushiki Kaisha Kobe Seiko Shoo (Kobe Steel, Ltd. )
    Inventors: Nobuyuki Kawakami, Mototaka Ochi, Aya Miki, Shinya Morita, Yoshihiro Yokota, Shinya Fukuma, Hiroshi Goto
  • Publication number: 20100219350
    Abstract: A beam detector and a beam monitor using the same are provided, the beam detector being capable of precisely and stably detecting, for a long period of time, the position, the intensity distribution, and the change with time of radiation beams, soft x-ray beams, and the like and being manufactured at a low cost as compared to that of a conventional detection device. In a beam detector 2 for detecting the position and intensity of beams, a beam irradiation portion 6 to be irradiated with beams 7 is formed of a polycrystalline diamond (C) film 4 containing at least one element (X) selected from the group consisting of silicon (Si), nitrogen (N), lithium (Li), beryllium (Be), boron (B), phosphorus (P), sulfur (S), nickel (Ni), and vanadium (V) at an X/C of 0.1 to 1,000 ppm, and this polycrystalline diamond film 4 has a light emission function of performing light emissions 8 and 8a when it is irradiated with the beams 7.
    Type: Application
    Filed: February 27, 2007
    Publication date: September 2, 2010
    Inventors: Koji Kobashi, Takeshi Tachibana, Yoshihiro Yokota, Kazushi Hayashi
  • Publication number: 20100200758
    Abstract: A radiation detecting apparatus of the present invention is an apparatus comprising a scintillator for converting incident radiation into ultraviolet radiation having a wavelength of 220 nm or less, the scintillator being composed of, for example, Nd-doped LaF3 crystals; and a diamond thin film sensor for guiding the resulting ultraviolet radiation and converting it into an electrical signal, the radiation detecting apparatus being adapted to transform the incident radiation to the electrical signal. The radiation detecting apparatus can detect radiation, such as X-rays, ? rays, ? rays, ? rays, or neutron rays, with high sensitivity. The radiation detecting apparatus also has a fast response, is very easy to downsize, has high resistance to radiation, and can be preferably used in the medical field, the industrial field, or the security field.
    Type: Application
    Filed: February 9, 2010
    Publication date: August 12, 2010
    Inventors: Kentaro Fukuda, Noriaki Kawaguchi, Toshihisa Suyama, Akira Yoshikawa, Takayuki Yanagida, Yuui Yokota, Yoshihiro Yokota, Takeshi Tachibana
  • Publication number: 20100031758
    Abstract: A soil for metal analysis having a high water content of 40% or more is dried up to 20% or less in water content within a short period of time. A filter paper 5 is laid over an inner bottom surface plate 2 of a nutsche 1. Powder of a super absorbent polymer 6 is uniformly spread (filled) on an upper surface thereof. Further, another filter paper 7 is laid thereon. A soil sample with a high water content is packed on an upper surface thereof, thereupon carrying out predrying to approximately 30% in water content. After that, the predried soil sample is added with ethanol, stirred and received in a receiving pan 38. The receiving pan 38 is arranged in a drying chamber 37. Water is supplied by a syringe 43 to a reaction vessel 42 having been filled with calcium oxide or barium oxide, thereby reacting calcium oxide or barium oxide with water. The receiving pan 38 is heated by a reaction heat generated at that moment, thereupon carrying out postdrying to make the water content 20% or less.
    Type: Application
    Filed: February 29, 2008
    Publication date: February 11, 2010
    Applicants: Railway Technical Research Institute, Horiba, Ltd.
    Inventors: Hiroyuki Sakai, Shintaro Komatani, Yoshihiro Yokota