Abstract: A method for manufacturing a multilayered substrate for a semiconductor device, as well as a semiconductor device, is provided, the multilayered substrate exhibiting an excellent thermal conduction property and an excellent heat spreading effect without occurrence of warp and deformation. A diamond layer is formed through vapor phase deposition on one principal surface of a first silicon substrate by a CVD method. A SiO2 layer is formed on this diamond layer. A SiO2 layer is formed on a surface of a second silicon substrate by a thermal oxidation method. The diamond layer is bonded to the second silicon substrate with SiO2 layers disposed on both the diamond layer and the second silicon substrate therebetween. The first silicon substrate is removed by dissolution through etching to expose the surface of the diamond layer. A silicon layer serving as a semiconductor layer is formed on the diamond layer by a CVD method.

Abstract: A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat spreader is directly formed on a substrate for the semiconductor device. In particular, the heat spreader is composed of a diamond layer and one or two metal or ceramic members, which are bonded to the diamond layer with one or two polymer adhesive layers. This diamond layer has a fiber structure across the thickness or a microcrystalline structure. Cilia are formed on a surface of the diamond layer facing the one or two metal or ceramic members.

Abstract: A diamond semiconductor device includes a substrate made of single crystal diamond; a first diamond layer, placed on the substrate, containing an impurity; a second diamond layer containing the impurity, the second diamond layer being placed on the substrate and spaced from the first diamond layer; and a third diamond layer which has a impurity content less than that of the first and second diamond layers, which acts as a channel region, and through which charges are transferred from the first diamond layer to the second diamond layer. The first and second diamond layers have a first and a second end portion, respectively, facing each other with a space located therebetween. The first and second end portions have slopes epitaxially formed depending on the orientation of the substrate. The third diamond layer lies over the slopes and a section of the substrate that is located under the space.

Abstract: A highly-oriented diamond film which has a flat surface but does not have non-oriented crystals in the surface can be provided by depositing a first diamond layer on a substrate by {111} sector growth of diamond crystals by a CVD method using a gaseous mixture of methane and hydrogen as material gas, and then depositing a second diamond layer on the first diamond layer by {100} sector growth of diamond crystals by a plasma CVD method using a gaseous mixture of methane, hydrogen, and oxygen as material gas under the conditions that the pressure of the material gas is 133 hPa or more; the material gas composition is determined such that ([C]?[O])/[CH3+H2+O2] is ?0.2×10?2 or more and [O]/[C] is 1.2 or less; and the substrate temperature is between 750° C. and 1000° C.

Abstract: A diamond element is mounted on an insulating base material having a thickness of not more than 3 mm provided with one pair of metal interconnects. In the diamond element, an insulating diamond layer to act as a detection layer is deposited on a substrate, and one pair of interdigitated electrodes are deposited on the surface of this insulating diamond layer. The interdegital electrodes of the diamond element are connected via wires to the metal interconnects deposited on the insulating base material. The insulating base material may transmit ultraviolet radiation to be detected. The diamond sensor is capable of stably detecting ultraviolet radiation even when the distance between a lamp and an irradiation object is short.

Abstract: An ultraviolet sensor includes a substrate; a diamond layer, placed on the substrate, functioning as a detector; and at least one pair of surface electrodes arranged on the diamond layer. The diamond layer has a detecting region present at the surface thereof, the detecting region has at least one sub-region exposed from the surface electrodes, and the sub-region has a covering layer, made of oxide or fluoride, lying thereon. A method for manufacturing the ultraviolet sensor includes a step of forming a diamond layer, functioning as a detector, on a substrate; a step of forming at least one pair of surface electrodes on the diamond layer; and a step of forming a covering layer, made of oxide or fluoride, on at least one sub-region of a detecting region present at the surface of the diamond layer, the sub-region being exposed from the surface electrodes.

Abstract: A diamond semiconductor device includes a substrate made of single crystal diamond; a first diamond layer, placed on the substrate, containing an impurity; a second diamond layer containing the impurity, the second diamond layer being placed on the substrate and spaced from the first diamond layer; and a third diamond layer which has a impurity content less than that of the first and second diamond layers, which acts as a channel region, and through which charges are transferred from the first diamond layer to the second diamond layer. The first and second diamond layers have a first and a second end portion, respectively, facing each other with a space located therebetween. The first and second end portions have slopes epitaxially formed depending on the orientation of the substrate. The third diamond layer lies over the slopes and a section of the substrate that is located under the space.

Abstract: Present invention is relating to a new use of a compound possessing an inhibitory activity on the production of nitric oxide, for increasing an effect caused by IL-2 inhibitor.

Abstract: Methods for increasing graft survival time comprising administering the combination of a compound that inhibits the production of nitric oxide and a compound that is a tricyclic macrolide, such as tacrolimus.

Abstract: A method of forming a diamond film includes synthesizing a diamond film on a surface of a substrate, where the surface of the substrate has trenches. The trenches inhibit delamination of the diamond film.

Abstract: Highly oxidative water containing ozone and/or OH radicals dissolved in a large amount is prepared by dissolving an oxygen rich gas at high pressure in water and then the pressure is lowered to form fine bubbles in water from the dissolved oxygen rich gas and the fine bubbles are exposed to pulse discharge. Method of and apparatus capable of forming highly oxidative water containing ozone or OH radicals at high concentration exhibiting an oxidizing performance at a level sufficient to practical use with excellent power efficiency and productivity by discharge in water.

Abstract: An organic LED is provided that can stably and efficiently emit light as a result of a heat resistant hole drift layer. The organic LED can include, in order, a substrate, a hole injection electrode layer, a hole drift layer, an organic light emitting layer, an electron drift layer and an electron injection electrode layer. The hole drift layer comprises a diamond film with a boron concentration of between about 1.0×1019 and about 1.0×1021/cm3. An optically transparent layer can be formed on the electron injection electrode layer.

Abstract: Diamond films and novel method to grow the diamond films can improve the performance of products utilizing diamond films. In the cathodoluminescence taken at room temperature, the integrated intensity ratio of the diamond films, CL.sub.1 /CL.sub.2, is equal or greater than 1/20, where CL.sub.1 is the integrated intensity of the emission band in the wavelength region shorter than 300 nm while CL.sub.2 is the integrated intensity of the emission band in the wavelength region from 300 nm to 800 nm. Such high quality diamond films with intensive coalescence on the surface can be obtained by deposition on the substrates or films, made of at least one member selected from the group consisting of platinum, platinum alloys, iridium, iridium alloys, nickel, nickel alloys, silicon, and metal silicides.

Abstract: A method is related to grow monocrystalline diamond films by chemical vapor deposition on large area at low cost. The substrate materials are either bulk single crystals of Pt or its alloys, or thin films of those materials deposited on suitable supporting materials. The surfaces of those substrates must be either (111) or (001), or must have domain structures consisting of (111) or (001) crystal surfaces. Those surfaces can be inclined within .+-.10 degree angles from (111) or (001). In order to increase the nucleation density of diamond, the substrate surface can be scratched by buff and/or ultrasonic polishing, or carbon implanted. Monocrystalline diamond films can be grown even though the substrate surfaces have been roughened. Plasma cleaning of substrate surfaces and annealing of Pt or its alloy films are effective in growing high quality monocrystalline diamond films.

Abstract: A method is presented to manufacture substrates for growing monocrystalline diamond films by chemical vapor deposition (CVD) on large area at low cost. The substrate materials are either Pt or its alloys, which have been subject to a single or multiple cycle of cleaning, roller press, and high temperature annealing processes to make the thickness of the substrate materials to 0.5 mm or less, or most preferably to 0.2 mm or less, so that either (111) crystal surfaces or inclined crystal surfaces with angular deviations within .+-.10 degrees from (111), or both, appear on the entire surfaces or at least part of the surfaces of the substrates. The annealing is carried out at a temperature above 800.degree. C. The present invention will make it possible to markedly improve various characteristics of diamond films, and hence put them into practical use.

Abstract: A three-dimensional acceleration sensor capable of detecting a small acceleration value and even an acceleration value amounting up to 100 G occurring in the event of a collision has a diaphragm for linking a frame and a massive part, and diaphragms and beams for linking the massive part and a central part. These elements are formed by working a single crystalline silicon plate. Gaps between the massive part and opposing electrodes are changed by acceleration applied to the massive part. A circuit connected to terminals detects the changes in gaps as changes in capacitances and determines direction and level of the applied acceleration.

Abstract: A detector for detecting a physical quantity as a quantity of electricity has a detection portion, a portion for stimulating the detection portion and a signal processing portion, wherein a calibration signal is supplied from the signal processing portion to the detection portion via the stimulating portion so as to measure a specific response of the detection portion, whereby self-calibration and correction of the characteristic of the detector are performed in accordance with an amount of a change in the response.

Abstract: A semiconductor accelerometer includes a mass portion formed at a center of a silicon plate, a frame portion formed around the circumference of the silicon plate so as to surround the mass portion and a diaphragm portion formed in the silicon plate between the mass portion and the frame portion so as to bridge the mass portion with the frame portion, one of major surfaces of the silicon plate serving as a common continuous major surface for the mass portion, frame portion and diaphragm portion. Piezoresistance elements are formed on the common continuous major surface at the diaphraqm portion and an additional Au film is formed on the common continuous major surface at the mass portion. The additional Au film constitutes in combination with the mass portion a weight which responds to an acceleration acting thereon.

Abstract: A three-dimensional acceleration sensor capable of detecting a small acceleration value and even an acceleration value amounting up to 100G occurring in the event of a collision comprises a diaphragm for linking a frame and a massive part and diaphragms and beams for linking the massive part and a central part. These elements are formed by working a single crystalline silicon plate. Gaps between the massive part and opposing electrodes are changed by acceleration applied to the massive part. A circuit connected to terminals detects the changes in gaps as changes in capacitances and determines direction and level of the applied acceleration.

Abstract: A detector for detecting a physical quantity as a quantity of electricity has a detection portion, a portion for stimulating the detection portion and a signal processing portion, wherein a calibration signal is supplied from the signal processing portion to the detection portion via the stimulating portion so as to measure a specific response of the detection portion, whereby self-calibration and correction of the characteristic of the detector are performed in accordance with an amount of a change in the response.