Abstract: The semiconductor light-emitting element substrate is provided with: a reference surface which includes a flat surface parallel to a crystal plane of the material of the semiconductor light-emitting element substrate; and a plurality of protrusions which protrude from the reference surface, the protrusions being arranged on a two-dimensional lattice along the crystal plane and including a flat surface parallel with the crystal plane as a distal face. In a plane including the reference surface, mutually adjacent protrusions have a pitch P of not less than 100 nm and not more than 5.0 ?m, wherein 0.76?S1/S2?7.42 is satisfied, where S1 is a first area which is the total area of the distal faces per unit area as viewed in plan opposing the reference surface, and S2 is a second area which is the total area of the reference surface per unit area.

Abstract: A mold for manufacturing an optical element is provided with a base material, and a recessing and protruding layer formed on a surface of the base material. The recessing and protruding structure of the recessing and protruding layer having a plurality of areas continuously arranged in a positional relationship in which the central point of seven adjacent protrusions is an intersection point of diagonal lines of six vertices of a regular hexagon, and the areas, shapes, and crystal orientations of the plurality of areas are random.

Abstract: A method of manufacturing a semiconductor light emitting device, the method including arranging multiple particles M in a monolayer on a substrate S, dry etching the multiple particles M arranged to provide a void between the particles M in a condition by which the particles M are etched while the substrate S is not substantially etched; and dry etching the substrate S by using the multiple particles M1 after the particle etching as an etching mask, thereby forming an uneven structure on one surface X the substrate S.

Abstract: A method of manufacturing a semiconductor light emitting device, including arranging a plurality of particles in a monolayer on a substrate, dry etching the plurality of particles arranged to provide a void between the particles in a condition IN which the particles are etched while the substrate is not substantially etched; and dry etching the substrate using the plurality of particles after the particle etching step as an etching mask, thereby forming an uneven structure on one surface of the substrate.

Abstract: A semiconductor light emitting device substrate including an uneven structure on one surface, the uneven structure including numerous convex portions and a flat surface between the convex portions, and multiple areas in which the central portions of seven adjacent convex portions are continuously and positionally aligned to become six vertices and intersection points of diagonal lines of a regular hexagon, and the area, shape and lattice orientation of the plurality of areas are random. A semiconductor light emitting device including the semiconductor light emitting device substrate; and a semiconductor functional layer laminated on the semiconductor light emitting device substrate.

Abstract: A method of manufacturing a semiconductor light emitting device, including arranging a plurality of particles in a monolayer on a substrate, dry etching the plurality of particles arranged to provide a void between the particles in a condition IN which the particles are etched while the substrate is not substantially etched; and dry etching the substrate using the plurality of particles after the particle etching step as an etching mask, thereby forming an uneven structure on one surface of the substrate.

Abstract: A mold for manufacturing an optical element is provided with a base material, and a recessing and protruding layer formed on a surface of the base material. The recessing and protruding structure of the recessing and protruding layer having a plurality of areas continuously arranged in a positional relationship in which the central point of seven adjacent protrusions is an intersection point of diagonal lines of six vertices of a regular hexagon, and the areas, shapes, and crystal orientations of the plurality of areas are random.

Abstract: A method of manufacturing a semiconductor light emitting device, the method including: a particle arranging step for arranging a plurality of particles M in a monolayer on a substrate S, a particle etching step for dry etching the plurality of particles M arranged to provide a void between the particles M in a condition by which the particles M are etched while the substrate S is not etched substantially; and a substrate etching step for dry etching the substrate S by using the plurality of particles M1 after the particle etching step as an etching mask, thereby forming an uneven structure on one surface X the substrate S.

Abstract: A system for displaying images is provided. The system includes an emissive display device including a plurality of pixel elements arranged in an array. Each pixel element includes a first substrate and a second substrate disposed thereunder, wherein the first substrate includes at least three subpixel regions. An organic light-emitting device is disposed between the first and second substrates and on the second substrate. At least one patterned polarizer film is disposed between the first and second substrates to be correspondingly located at one of the subpixel regions. At least one retarder film is disposed between the first and second substrates and affixed to the patterned polarizer film.

Abstract: A top-emission organic light-emitting diode (OLED) structure is provided. The top-emission OLED structure includes a substrate, a reflective layer, a first conductive layer, a second conductive layer and an emissive layer. The reflective layer is disposed above the substrate. The reflective layer includes a first material, a second material and a third material. The first material is aluminum (Al), the second material is nickel (Ni), and the third material is selected form a group consisting of group 13 elements and group 14 elements of a periodic table of elements. The first conductive layer is disposed above the reflective layer. The second conductive layer is disposed above the first conductive layer. The emissive layer is disposed between the first conductive and the second conductive layer.

Abstract: A system for displaying images is provided. The system includes an emissive display device including a plurality of pixel elements arranged in an array. Each pixel element includes a first substrate and a second substrate disposed thereunder, wherein the first substrate includes at least three subpixel regions. An organic light-emitting device is disposed between the first and second substrates and on the second substrate. At least one patterned polarizer film is disposed between the first and second substrates to be correspondingly located at one of the subpixel regions. At least one retarder film is disposed between the first and second substrates and affixed to the patterned polarizer film.

Abstract: A top-emission organic light-emitting diode (OLED) structure is provided. The top-emission OLED structure includes a substrate, a reflective layer, a first conductive layer, a second conductive layer and an emissive layer. The reflective layer is disposed above the substrate. The reflective layer includes a first material, a second material and a third material. The first material is aluminum (Al), the second material is nickel (Ni), and the third material is selected form a group consisting of group 13 elements and group 14 elements of a periodic table of elements. The first conductive layer is disposed above the reflective layer. The second conductive layer is disposed above the first conductive layer. The emissive layer is disposed between the first conductive and the second conductive layer.

Abstract: It is an object of the invention to provide a liquid crystal display device which permits both miniaturization and cost reduction to be realized and has a high reliability. A device comprises a driving substrate (11) having wiring layers (18a, 18b), an opposite substrate (21) having an opposite electrode (24), a sealing (31) member disposed between the driving substrate (11) and the opposite substrate (21), and a liquid crystal layer (41) formed by a liquid crystal material sealed by the sealing member (31) in the space between the driving substrate (11) and the opposite substrate (21). A side face (11a) of the driving substrate (11) is flush with a side face (21a) of the opposite substrate (21). The wiring layers (18a, 18b) extend to an edge of the side face (11a) of the driving substrate (11), an end of the wiring layers (18a, 18b) having a possibility to contact with the atmosphere, the opposite electrode (24) extending to or near to an edge of the side face (21a) of the opposite substrate (21).

Abstract: The invention provides a semiconductor device and a method for forming patterns in which the manufacturing cost is reduced while the step coverage is improved. The ITO film 50 and the MoCr film 100 are dry-etched after having formed the ITO film 50 and the MoCr film 100.

Abstract: The invention provides a semiconductor device and a method for forming patterns in which the manufacturing cost is reduced while the step coverage is improved. The ITO film 50 and the MoCr film 100 are dry-etched after having formed the ITO film 50 and the MoCr film 100.

Abstract: The invention provides a semiconductor device and a method for forming patterns in which the manufacturing cost is reduced while the step coverage is improved. The ITO film 50 and the MoCr film 100 are dry-etched after having formed the ITO film 50 and the MoCr film 100.

Abstract: A method of making a circuit board (10) on which surface electronic components (15) are mounted during the method using a solder reflow process. The board comprises a circuit portion (12), a surrounding circumferential portion (13) and at least one elongated opening (14) formed in the surrounding circumferential portion substantially parallel to the direction that the board travels during the reflow direction (16), thereby preventing electronic component soldering failures that may occur as a result of the deflection of the circuit board during the reflow process.

Abstract: In accordance with the invention, a planarization film 9 is exposed using a photo mask 20 and then it is developed, so that the planarization film 9 is provided with recesses 9b. Finally, pixel electrodes 10 are formed on the planarization film 9 comprising those recesses 9b.

Abstract: The invention provides a semiconductor device and a method for forming patterns in which the manufacturing cost is reduced while the step coverage is improved. The ITO film 50 and the MoCr film 100 are dry-etched after having formed the ITO film 50 and the MoCr film 100.

Abstract: The invention provides a method for forming a metal film for a thin film device so as to have certain gentle taper angles. The method is an improved fine work method to produce metal films such as light shutter films for thin film devices through the combined production method of a wet-etching step and a dry-etching step. Preliminarily, the cross sectional shape of the resist film is formed so as to have certain taper angles at both end portions. Accordingly, during the dry-etching step, an etchant gas can smoothly flow through along the sidewall of the resist and accordingly the metal film can be formed so as to have gentle taper angles along the flow line of the etchant gas. Thus, it is possible in accordance with the invention to significantly improve the production efficiency and the quality of such thin film devices as the TFTs to be used for the LCDs.