Abstract: A NAND EEPROM is disclosed which is capable of variously setting, for each chip, the voltage to be applied to the control gates of memory cells. The semiconductor chip includes a NAND memory cell array and a high-voltage generating circuit for generating data writing internal voltage VPP required when data is written on the memory cell array. Moreover, the semiconductor chip includes a set voltage selection circuit for arbitrarily setting the level of the voltage VPP generated by the high-voltage generating circuit for each chip and a multiplexer for extracting, to the outside of the chip, setting signal LTF which is a signal for enabling the level of the voltage VPP set arbitrarily.

Abstract: Electrically erasable and writable nonvolatile memory cells are arranged. After erasing the data in at least part of the memory cells, light-writing is done by applying, to the memory cells erased from, a bias whose pulse width is shorter or whose write voltage is lower than in an ordinary write operation. Then, a property-degraded cell which is in a written state is detected from among the memory cells subjected to light-writing. Because the property-degraded cell can be found in this way, the lifetime of the chip can be improved by, for example, replacing the defective cell with a normal cell.

Abstract: The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite oepration, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.

Abstract: A non-volatile semiconductor memory device includes a flip-flop circuit for holding write data in one of first and second states. A bit line is connected to the flip-flop circuit via a switching element and a transistor charges the bit line and line. A non-volatile memory cell, connected to the bit line and having a MOS transistor structure, stores data when a threshold thereof is set in one of first and second threshold ranges, wherein at the time of a write mode the threshold of the memory cell is shifted from the first threshold range towards the second threshold range while the flip-flop circuit remains in the first state and the shift of the threshold is not effected while the flip-flop circuit remains in the second state, and at the time of a verify mode following the write mode the bit line is kept at a charge potential by the charging transistor while the threshold remains in the second threshold range.

Abstract: A NAND cell type electrically erasable programmable read-only memory has a memory array section containing NAND cell units. Each NAND cell unit has a series array of floating gate type metal-oxide semiconductor field effect transistors as memory cell transistors. The memory section is associated with a control-gate controller, a data-latch circuit, a sense amplifier section, and a data comparator, which is connected via an output buffer to a verify-termination detector. When a data is once written into a selected memory cell in a data programming mode, a specific basing voltage is applied to the selected cell so that the actual electrical data write condition of the selected memory cell is verified. If the comparator detects that the verified write condition is dissatisfied, data-rewriting operations are repeatedly executed by additionally supplied the selected cell with a suitable voltage which compensates for the dissatisfaction of the verified write condition in the selected memory cell transistor.

Abstract: The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite operation, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.

Abstract: A NAND EEPROM is disclosed which is capable of variously setting, for each chip, the voltage to be applied to the control gates of memory cells. The semiconductor chip includes a NAND memory cell array and a high-voltage generating circuit for generating data writing internal voltage VPP required when data is written on the memory cell array. Moreover, the semiconductor chip includes a set voltage selection circuit for arbitrarily setting the level of the voltage VPP generated by the high-voltage generating circuit for each chip and a multiplexer for extracting, to the outside of the chip, setting signal LTF which is a signal for enabling the level of the voltage VPP set arbitrarily.

Abstract: A semiconductor storage apparatus and a method of writing data to the semiconductor storage apparatus can restrict the threshold value of the memory cells, to which data has been written or from which data has been erased, to be included in a predetermined range without excessive writing by performing a verifying operation. In the writing operation, writing is performed such that a first determining level is set to a loose level which is the same as the level set for the reading operation or higher than the loose level but lower than a finally required determining level. In accordance with the first determining level, a first writing operation is performed. Then, a second writing operation is performed in accordance with a second determining level.

Abstract: The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite oepration, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.

Abstract: A potential transfer circuit consists of a first pad, a second pad, a voltage detection circuit, a level shift circuit and a switching MOS transistor. The voltage detection circuit is connected to the first pad and detects a high voltage applied to the first pad and generates a control signal which is supplied to the level shift circuit. The level shift circuit receives the control signal and generates a drive signal which is in turn supplied to the gate of the MOS transistor, causing the MOS transistor to supply to a circuit under test a test signal supplied through the second pad to the drain of the MOS transistor. In preferred embodiments, the power supply of the level shift circuit is derived from the high voltage signal supplied to the first pad.

Abstract: A semiconductor memory device according to he present invention comprises a first conductivity-type semiconductor substrate in which a second conductivity-type well is formed, a memory cell array composed of a plurality of memory cells arranged in a matrix in the second conductivity-type well, and a substrate voltage control circuit selectively outputting an output voltage to the substrate according to an external input signal.

Abstract: A semiconductor memory device includes a semiconductor substrate, a memory cell array having memory cells, each of which stores data, formed in matrix on the semiconductor substrate, a plurality of data latch circuits, each, of which is arranged at one end of at least one bit line connected to the memory cell array and for latching programming data, a control section for judging whether all of a plurality of latched data included in date latch groups constituted by the plurality of data latch circuits are the same as a first data or not and for controlling to change a potential of a plurality of first nodes according to the judging result, a section for detecting potentials of the plurality of the first nodes and for judging whether all data latched by the latch circuits are the same as the first data and for controlling to change a potential of a plurality of second nodes according to the judging result, and a section for detecting the potential of the plurality of second nodes and for outputting a judging r

Abstract: A sense amplifier for signal detection for use in an electrically erasable and programmable read-only memory (EEPROM). The sense amplifier includes a first clock signal-synchronized inverter including a first inverter and first switch for switching between activating and deactivating states of the first inverter, the first clock signal-synchronized inverter having a first input connected to a corresponding one of the bit lines and a first output. A second clock signal-synchronized inverter is arranged in parallel with the first clock signal-synchronized inverter and includes a second inverter and a second switch for switching between activating and deactivating states of the second inverter, the second clock signal-synchronized inverter having an input connected to the output of the first clock signal-synchronized inverter and an output connected to the input of the first clock signal-synchronized inverter.

Abstract: A semiconductor circuit device includes an oscillator for outputting an oscillating signal, a driving signal generator for generating driving signals having respective phases based on a counting of oscillations of the oscillating signal, and a charge pump circuit driven by the driving signals. A pulse width ratio of the driving signals to one another is constant even when an oscillation period of the oscillating signal output by the oscillator changes, whereby the charge pump operates properly under changing conditions.

Abstract: A non-volatile semiconductor memory device includes a flip-flop circuit for holding write data in one of first and second states. A bit line is connected to the flip-flop circuit via a switching element and a transistor charges the bit line. A non-volatile memory cell, connected to the bit line and having a MOS transistor structure, stores data when a threshold thereof is set in one of first and second threshold ranges, wherein at the time of a write mode the threshold of the memory cell is shifted from the first threshold range towards the second threshold range while the flip-flop circuit remains in the first state and the shift of the threshold is not effected while the flip-flop circuit remains in the second state, and at the time of a verify mode following the write mode the bit line is kept at a charge potential by the charging transistor while the threshold remains in the second threshold range.

Abstract: The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite operation, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.

Abstract: A non-volatile semiconductor memory device including a plurality of bit lines; a plurality of word lines insulatively intersecting the bit lines; a memory cell array including a plurality of memory cells coupled to the bit lines and the word lines, each memory cell including a transistor with a charge storage portion; a plurality of programming circuits coupled to the memory cell array (i) for storing data which define whether or not write voltages are to be applied to respective of the memory cells, (ii) for selectively applying the write voltages to a part of the memory cells, which part is selected according to the data stored in the plurality of programing circuits, (iii) for determining actual written states of the memory cells, and (iv) for selectively modifying the stored data based on a predetermined logical relationship between the determined actual written states of the memory cells and the data stored in the plurality of programming circuits, thereby applying the write voltages only to memory cells

Abstract: In a non-volatile semiconductor memory device having a memory cell array formed by arranging a plurality of non-volatile reloadable semiconductor memory cells (Mi) and select gate elements on a semiconductor substrate (11) via a gate insulating film (13), each memory cell being formed by interposing an interlayer insulating film (15) between a charge storage layer and a control gate line (16.sub.i), the memory device comprises a plurality of select gate lines (14.sub.i) formed by a wiring layer the same as the charge storage layer of the memory cells, as gate electrodes of the select gate elements; and select gate over-adjacent connect lines (16.sub.9, 16.sub.10) formed by a wiring layer the same as the control gate lines (16.sub.i) of the memory cells and located over the select gate lines (14.sub.9, 14.sub.10) via an insulating film in such a way as to be kept floated without contacting with any other wires and potential nodes.

Abstract: The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite operation, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.

Abstract: A semiconductor memory device according to the invention comprises a semiconductor substrate, a memory cell array having memory cells, each of which stores data, formed in matrix on the semiconductor substrate, a plurality of data latch circuits, each of which is arranged a one end of at least one bit line connected to the memory cell array and for latching programming data, control section for judging whether all of a plurality of latched data included in data latch groups constituted by the plurality of data latch circuits are the same as a first data or not and for controlling to change a potential of a plurality of first nodes according to the judging result, where there is one first node corresponding to each data latch circuit group, section for detecting potentials of the plurality of the first nodes corresponding to the plurality of data latch circuit groups, judging whether all data latched by the latch circuits includes in the plurality of latch circuit groups are the same as the first data and for