Abstract: Provided is an image processing apparatus that stereoscopically displays a two-dimensional image, comprising a generating section that generates a left-side image and a right-side image by shifting the two-dimensional image left and right in a display region; a right-edge processing section that attaches a right-edge image, which is displayed within a prescribed range from a right edge of the display region, to a right side of the left-side image; a left-edge processing section that attaches a left-edge image, which is displayed within a prescribed range from a left edge of the display region, to a left side of the right-side image; and an output section that outputs the left-side image with the right-edge image attached thereto to a left eye of a user and outputs the right-side image with the left-edge image attached thereto to a right eye of the user.

Abstract: Provided is an image processing apparatus that stereoscopically displays a two-dimensional image, comprising a generating section that generates a left-side image and a right-side image by shifting the two-dimensional image left and right in a display region; and an output section that outputs the left-side image to a left eye of the user and the right-side image to a right eye of the user. The generating section generates the left-side image and the right-side image by shifting the two-dimensional image to the left and right within the display region by a distance no greater than a distance between pupils of a user.

Abstract: An image display apparatus for displaying plural sets of a pair of right-eye image and left-eye image to their corresponding viewing points is provided, which includes: a multi-view image generating unit which receives a right image and left image corresponding to predetermined two viewing points, and generates right-eye images and left-eye images corresponding to a plurality of viewing points by shifting the entireties of the received right image and left image; and a display unit which displays the right-eye images and left-eye images generated by the multi-view image generating unit to their corresponding viewing points.

Abstract: Provided is an image processing apparatus that stereoscopically displays a two-dimensional image, comprising a generating section that generates a left-side image and a right-side image by shifting the two-dimensional image left and right in a display region; and an output section that outputs the left-side image to a left eye of the user and the right-side image to a right eye of the user. The generating section generates the left-side image and the right-side image by shifting the two-dimensional image to the left and right within the display region by a distance no greater than a distance between pupils of a user.

Abstract: Provided is an image processing apparatus that stereoscopically displays a two-dimensional image, comprising a generating section that generates a left-side image and a right-side image by shifting the two-dimensional image left and right in a display region; a right-edge processing section that attaches a right-edge image, which is displayed within a prescribed range from a right edge of the display region, to a right side of the left-side image; a left-edge processing section that attaches a left-edge image, which is displayed within a prescribed range from a left edge of the display region, to a left side of the right-side image; and an output section that outputs the left-side image with the right-edge image attached thereto to a left eye of a user and outputs the right-side image with the left-edge image attached thereto to a right eye of the user.

Abstract: In step S11, quantities that are varied (parameters) are respectively varied in a stepwise manner at a specified pitch, and standard working conditions consisting of combinations of these parameters are determined. For all of the standard working conditions, a working is actually performed, and the treated shapes that are obtained as a result are taken as the standard treated shapes for the respective standard working conditions (step S12). In cases where an appropriate simulation program is available, the standard treated shapes may be determined by simulation without actually performing a working. The standard working conditions and standard treated shapes thus determined are stored in a memory device. When the desired shape that is to be obtained by working is given in step S13, a standard treated shape that is close to the desired shape is sought in step S14. Thus, when a treated shape is given, the working conditions for this treated shape can be determined.

Abstract: The preparation apparatus 4 determines the target distribution of the amount of polishing on the basis of the film thickness of the wafer 2 measured by the measuring apparatus 3. The preparation apparatus 4 assumes a control program for the purpose of controlling the polishing apparatus 1, and predicts the distribution of the amount of polishing that is obtained after the wafer 2 is polished by the polishing apparatus 1 in accordance with the assumed control program. In this case, the amount of polishing in individual partial regions of the polished surface of the wafer 2 is predicted using an indicator that indicates the height distribution of the polishing surface of the polishing pad 14 (when no pressure is applied to this polishing pad) as one parameter. The preparation apparatus 4 judges the acceptability of the assumed control program by comparing the predicted distribution of the amount of polishing and the target distribution of the amount of polishing.

Abstract: Methods and apparatus are disclosed for detecting a thickness of a surficial layer (e.g., metal or insulating layer) on a workpiece (e.g., semiconductor wafer) during a process for planarizing the layer, so as to stop the process when a suitable process endpoint is reached. Layer thickness is detected based on a spectral-characteristic signal of reflected or transmitted signal light, obtained by directing a probe light onto the surface of the workpiece. Example spectral characteristics are local maxima and minima of signal-light waveform, differences or quotients of the same, a dispersion of the signal-light waveform, a component of a Fourier transform of the signal waveform, a cross-correlation function of the signal waveform. Alternatively, the zeroth order of signal light is selected for measurement, or a spatial coherence length of the probe light is compared with the degree of fineness of the pattern on the surface illuminated with the probe light.

Abstract: In step S11, quantities that are varied (parameters) are respectively varied in a stepwise manner at a specified pitch, and standard working conditions consisting of combinations of these parameters are determined. For all of the standard working conditions, a working is actually performed, and the treated shapes that are obtained as a result are taken as the standard treated shapes for the respective standard working conditions (step S12). In cases where an appropriate simulation program is available, the standard treated shapes may be determined by simulation without actually performing a working. The standard working conditions and standard treated shapes thus determined are stored in a memory device. When the desired shape that is to be obtained by working is given in step S13, a standard treated shape that is close to the desired shape is sought in step S14. Thus, when a treated shape is given, the working conditions for this treated shape can be determined.

Abstract: The preparation apparatus 4 determines the target distribution of the amount of polishing on the basis of the film thickness of the wafer 2 measured by the measuring apparatus 3. The preparation apparatus 4 assumes a control program for the purpose of controlling the polishing apparatus 1, and predicts the distribution of the amount of polishing that is obtained after the wafer 2 is polished by the polishing apparatus 1 in accordance with the assumed control program. In this case, the amount of polishing in individual partial regions of the polished surface of the wafer 2 is predicted using an indicator that indicates the height distribution of the polishing surface of the polishing pad 14 (when no pressure is applied to this polishing pad) as one parameter. The preparation apparatus 4 judges the acceptability of the assumed control program by comparing the predicted distribution of the amount of polishing and the target distribution of the amount of polishing.

Abstract: Prior to the polishing of the wafer, a reflective body which has the same shape and dimensions as the wafer is held on the polishing head instead of the wafer. A polishing agent is interposed between the window of the polishing head and the reflective body, and the reflective body is pressed against the polishing pad with the same pressure as that applied during the polishing of the wafer. In this state, the reflective body is irradiated via the window with a probe light emitted from the light source, and the spectroscopic intensity of the reflected light is obtained from the sensor as a reference spectrum. During the polishing of the wafer, the spectroscopic intensity of the reflected light from the wafer is successively obtained as measured spectra from sensor; the intensity ratio of these measured spectra to the above-mentioned reference spectrum is determined, and the polishing state of the wafer is monitored on the basis of this intensity ratio.

Abstract: Methods and apparatus are disclosed for detecting a thickness of a surficial layer (e.g., metal or insulating layer) on a workpiece (e.g., semiconductor wafer) during a process for planarizing the layer, so as to stop the process when a suitable process endpoint is reached. Layer thickness is detected based on a spectral-characteristic signal of reflected or transmitted signal light, obtained by directing a probe light onto the surface of the workpiece. Example spectral characteristics are local maxima and minima of signal-light waveform, differences or quotients of the same, a dispersion of the signal-light waveform, a component of a Fourier transform of the signal waveform, a cross-correlation function of the signal waveform. Alternatively, the zeroth order of signal light is selected for measurement, or a spatial coherence length of the probe light is compared with the degree of fineness of the pattern on the surface illuminated with the probe light.

Abstract: Apparatus and methods are disclosed that measure the thickness of a layer on a workpiece such as a semiconductor wafer, especially as the layer is undergoing a process such as polishing to achieve planarization of the layer. The apparatus comprises a probe light optical system that directs a beam of probe light to be incident on a surface of the layer, and produce a signal light from reflection of the probe light from or transmission of the probe light through the layer. A light detector retrieves and detects sufficient wavelengths of the signal light to produce a corresponding electronic signal encoding data regarding the intensity at various wavelengths of the signal light.

Abstract: After a hole is formed in a polishing pad, a transparent window plate is inserted into the hole. Here, a gap is left between the upper surface of the transparent window plate and the outermost surface constituting the working surface of the polishing pad. During polishing, the polishing head holding the wafer applies a load to the polishing pad by means of a load-applying mechanism, so that the polishing pad and transparent window plate are compressed. In this case, the system is arranged so that the gap remains constant, and so that a dimension equal to or greater than a standard value is maintained. Since the upper surface of the transparent window plate is recessed from the upper surface of the polishing pad, there is no scratching of the surface of the transparent window plate during dressing. Accordingly, the polishing pad has a long useful life.

Abstract: Prior to the polishing of the wafer 4, a reflective body which has the same shape and dimensions as the wafer 4 is held on the polishing head 2 instead of the wafer 4. A polishing agent 5 is interposed between the window 15 of the polishing head 13 and the reflective body, and the reflective body is pressed against the polishing pad 13 with the same pressure as that applied during the polishing of the wafer 4. In this state, the reflective body is irradiated via the window 15 with a probe light emitted from the light source 31, and the spectroscopic intensity of the reflected light is obtained from the sensor 43 as a reference spectrum. During the polishing of the wafer 4, the spectroscopic intensity of the reflected light from the wafer 4 is successively obtained as measured spectra from sensor 43; the intensity ratio of these measured spectra to the above-mentioned reference spectrum is determined, and the polishing state of the wafer 4 is monitored on the basis of this intensity ratio.

Abstract: After a hole is formed in a polishing pad, a transparent window plate is inserted into the hole. Here, a gap is left between the upper surface of the transparent window plate and the outermost surface constituting the working surface of the polishing pad. During polishing, the polishing head holding the wafer applies a load to the polishing pad by means of a load-applying mechanism, so that the polishing pad and transparent window plate are compressed. In this case, the system is arranged so that the gap remains constant, and so that a dimension equal to or greater than a standard value is maintained. Since the upper surface of the transparent window plate is recessed from the upper surface of the polishing pad, there is no scratching of the surface of the transparent window plate during dressing. Accordingly, the polishing pad has a long useful life.

Abstract: ? training Methods and apparatus are disclosed for detecting a thickness of a surficial layer (e.g., metal or insulating layer) on a workpiece (e.g., semiconductor wafer) during a process for planarizing the layer, so as to stop the process when a suitable process endpoint is reached. Layer thickness is detected based on a spectral-characteristic signal of reflected or transmitted signal light, obtained by directing a probe light onto the surface of the workpiece. Example spectral characteristics are local maxima and minima of signal-light waveform, differences or quotients of the same, a dispersion of the signal-light waveform, a component of a Fourier transform of the signal waveform, a cross-correlation function of the signal waveform. Alternatively, the zeroth order of signal light is selected for measurement, or a spatial coherence length of the probe light is compared with the degree of fineness of the pattern on the surface illuminated with the probe light.

Abstract: Methods and apparatus are disclosed for detecting a thickness of a surficial layer (e.g., metal or insulating layer) on a workpiece (e.g., semiconductor wafer) during a process for planarizing the layer, so as to stop the process when a suitable process endpoint is reached. Layer thickness is detected based on a spectral-characteristic signal of reflected or transmitted signal light, obtained by directing a probe light onto the surface of the workpiece. Example spectral characteristics are local maxima and minima of signal-light waveform, differences or quotients of the same, a dispersion of the signal-light waveform, a component of a Fourier transform of the signal waveform, a cross-correlation function of the signal waveform. Alternatively, the zeroth order of signal light is selected for measurement, or a spatial coherence length of the probe light is compared with the degree of fineness of the pattern on the surface illuminated with the probe light.

Abstract: Methods and apparatus are disclosed for detecting a thickness of a surficial layer (e.g., metal or insulating layer) on a workpiece (e.g., semiconductor wafer) during a process for planarizing the layer, so as to stop the process when a suitable process endpoint is reached. Layer thickness is detected based on a spectral-characteristic signal of reflected or transmitted signal light, obtained by directing a probe light onto the surface of the workpiece. Example spectral characteristics are local maxima and minima of signal-light waveform, differences or quotients of the same, a dispersion of the signal-light waveform, a component of a Fourier transform of the signal waveform, a cross-correlation function of the signal waveform. Alternatively, the zeroth order of signal light is selected for measurement, or a spatial coherence length of the probe light is compared with the degree of fineness of the pattern on the surface illuminated with the probe light.

Abstract: Apparatus and methods are disclosed for measuring changes in light absorption of a sample optical component. The sample is held in a sample holder in a sample chamber during irradiation by an intense light, usually pulsatile light. Molecules of a gas are introduced into the sample chamber as the sample is irradiated. The molecules can be of a material suspected to become adhered to or absorbed by the sample in a way that causes an undesired change in light absorption by the sample. Changes in light absorption by the sample are preferably measured photoacoustically. The molecules of the gas can be generated by controlled irradiation of a "source material" with a light (which can be the same as used to irradiate the sample) sufficient to generate such molecules of gas from the source material, and routing the gaseous molecules to the sample as the sample is irradiated.