Abstract: A semiconductor apparatus including a semiconductor substrate, an insulating layer, a via hole, and a through-hole interconnection is provided. The insulating layer is formed on the semiconductor substrate. The via hole is formed through the semiconductor substrate and the insulating layer. The through-hole interconnection has a conductive layer formed on an insulating layer in the via hole. The surface of the insulating layer formed on the inner surface of the via hole is substantially planarized by filling a recessed portion on a boundary between the semiconductor substrate and the insulating layer formed on the semiconductor substrate.

Abstract: A solid-state imaging device includes a semiconductor substrate having a foreside provided with an imaging area and an electrode pad, the imaging area having an array of optical sensors, the electrode pad being disposed around a periphery of the imaging area; a transparent substrate joined to the foreside of the semiconductor substrate with a sealant therebetween; underside wiring that extends through the semiconductor substrate from the electrode pad to an underside of the semiconductor substrate; and a protective film composed of an inorganic insulating material and interposed between the semiconductor substrate and the sealant, the protective film covering at least the electrode pad.

Abstract: A semiconductor device includes: a mounted body in which a wiring pattern is formed on a first main surface; a semiconductor chip mounted on the surface of the mounted body on which the wiring pattern is formed; an underfill material which is filled between the mounted body and the semiconductor chip and forms a fillet on an outer peripheral part of the semiconductor chip; and an injection section which is disposed on the mounted body and on an outside of a side section, on which the fillet is formed to be longest, of four side sections defining a chip mount area on which the semiconductor chip is mounted, and guides the underfill material to between the mounted body and the semiconductor chip.

Abstract: A semiconductor device includes: a mount body; a semiconductor chip mounted on the mount body via projecting connecting terminals; and a filling resin filled between the mount body and the semiconductor chip to seal the connecting terminals, the filling resin being retained inside the semiconductor chip in such a way as not to run out of at least one side portion in four side portions defining an outer peripheral portion of the semiconductor chip.

Abstract: There are provided with a wiring structure and a method for manufacturing the same wherein in a wiring structure of multi-layered wiring in which a metal wiring is formed on a substrate forming a semiconductor element thereby obtaining connection of the element, no damage to insulation property between the abutting wirings by occurrence of leakage current and no deterioration of insulation resistance property between the abutting wirings are achieved in case that fine metal wiring is formed in a porous insulation film. The insulation barrier layer 413 is formed between an interlayer insulation film and the metal wiring, in the metal wiring structure on the substrate forming the semiconductor element. The insulation barrier layer enables to reduce leakage current between the abutting wirings and to elevate the insulation credibility.

Abstract: Herein disclosed an electronic component having a passivation layer in which an opening that exposes a part of a pad electrode is formed, an underlying metal layer formed on the pad electrode and the passivation layer, and a barrier metal layer formed on the underlying metal layer for an external connection electrode, the electronic component including a recess or/and a projection configured to be provided under the barrier metal layer outside or/and inside the opening, the underlying metal layer being formed on the recess or/and the projection and having a surface shape that follows the recess or/and the projection.

Abstract: There are provided with a wiring structure and a method for manufacturing the same wherein in a wiring structure of multi-layered wiring in which a metal wiring is formed on a substrate forming a semiconductor element thereby obtaining connection of the element, no damage to insulation property between the abutting wirings by occurrence of leakage current and no deterioration of insulation resistance property between the abutting wirings are achieved in case that fine metal wiring is formed in a porous insulation film. The insulation barrier layer 413 is formed between an interlayer insulation film and the metal wiring, in the metal wiring structure on the substrate forming the semiconductor element. The insulation barrier layer enables to reduce leakage current between the abutting wirings and to elevate the insulation credibility.

Abstract: A semiconductor apparatus including a semiconductor substrate, an insulating layer, a via hole, and a through-hole interconnection is provided. The insulating layer is formed on the semiconductor substrate. The via hole is formed through the semiconductor substrate and the insulating layer. The through-hole interconnection has a conductive layer formed on an insulating layer in the via hole. The surface of the insulating layer formed on the inner surface of the via hole is substantially planarized by filling a recessed portion on a boundary between the semiconductor substrate and the insulating layer formed on the semiconductor substrate.

Abstract: A technique is provided for protecting an interlayer insulating film formed of an organic low dielectric constant material from any damage applied in a semiconductor process, and for attaining the decrease leak current in the interlayer insulating film, resulting in the improvement of reliability of a semiconductor device. The semiconductor device according to the present invention has an organic insulating films having openings. The organic insulating films have modified portions facing the openings. The modified portions contains fluorine atoms and nitrogen atoms. The concentration of the fluorine atoms in the modified portions is lower than the concentration of the nitrogen atoms. The above-mentioned modified layers protect the semiconductor device from the damage applied in the semiconductor process, while suppressing the corrosion of the conductors embedded in the openings.

Abstract: A semiconductor device includes a semiconductor substrate having first and second surfaces opposite each other, the first surface being an active surface by provided with an electronic element thereon, a pad electrode formed to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening, formed to reach the pad electrode from a bottom surface of the first opening, having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.

Abstract: A solid-state imaging device includes a semiconductor substrate having a foreside provided with an imaging area and an electrode pad, the imaging area having an array of optical sensors, the electrode pad being disposed around a periphery of the imaging area; a transparent substrate joined to the foreside of the semiconductor substrate with a sealant therebetween; underside wiring that extends through the semiconductor substrate from the electrode pad to an underside of the semiconductor substrate; and a protective film composed of an inorganic insulating material and interposed between the semiconductor substrate and the sealant, the protective film covering at least the electrode pad.

Abstract: Herein disclosed an electronic component having a passivation layer in which an opening that exposes a part of a pad electrode is formed, an underlying metal layer formed on the pad electrode and the passivation layer, and a barrier metal layer formed on the underlying metal layer for an external connection electrode, the electronic component including a recess or/and a projection configured to be provided under the barrier metal layer outside or/and inside the opening, the underlying metal layer being formed on the recess or/and the projection and having a surface shape that follows the recess or/and the projection.

Abstract: The present invention provides a process of producing a porous insulating film effective as an insulating film constituting a semiconductor device and a process of producing a porous insulating film having high adhesion to a semiconductor material, which is in contact with the upper and lower interfaces of the insulating film. Gas containing molecule vapor of at least one or more organic silica compounds, which have a cyclic silica skeleton in its molecule and have at least one or more unsaturated hydrocarbon groups bound with the cyclic silica skeleton is introduced into plasma to grow a porous insulating film on a semiconductor substrate.

Abstract: A multilayer wiring structure for connecting a semiconductor device is disclosed which is obtained by forming metal wirings on a substrate in which the semiconductor device is formed. The wiring structure free from such conventional problems that insulation between wirings next to each other is damaged or insulation resistance between wirings next to each other is deteriorated by generation of leakage current when fine metal wirings are formed in a porous insulating film. A method for producing such a wiring structure is also disclosed. In the metal wiring structure on the substrate in which the semiconductor device is formed, a insulating barrier layer (413) containing an organic matter is formed between an interlayer insulating film and a metal wiring. This insulating barrier layer reduces leakage current between wirings next to each other, thereby improving insulation reliability.

Abstract: A technique is provided for protecting an interlayer insulating film formed of an organic low dielectric constant material from any damage applied in a semiconductor process, and for attaining the decrease leak current in the interlayer insulating film, resulting in the improvement of reliability of a semiconductor device. The semiconductor device according to the present invention has an organic insulating films (5, 26, 28) having openings. The organic insulating films (5, 26, 28) have modified portions (5a, 26a, 28a) facing the openings. The modified portions (5a, 26a, 28a) contains fluorine atoms and nitrogen atoms. The concentration of the fluorine atoms in the modified portions (5a, 26a, 28a) is lower than the concentration of the nitrogen atoms. The above-mentioned modified layers (5a, 26a, 28a) protect the semiconductor device from the damage applied in the semiconductor process, while suppressing the corrosion of the conductors embedded in the openings.

Abstract: Separation apparatus capable of separating plasma into high molecular weight substances and low molecular weight substances containing albumin, regardless of whether plasma is obtained by separation of corpuscular components in a continuous centrifugal separator or in a batch-type centrifugal separator. The apparatus comprises a filtration membrane module, a plasma feeding circuit connecting the centrifugal separator with the filtration membrane module, a plasma return circuit for returning to a patient purified plasma freed of high molecular weight substances, a supplemental fluid circuit for supplying additional fluid to the plasma return circuit, and a condensed plasma discharge circuit for disposal of high molecular weight substances. The apparatus is controlled independently of the centrifugal separator.

Abstract: A blood processing apparatus which comprises a blood circulating circuit including a plasma filter, a plasma circulating circuit for draining at least a portion of the blood plasma and for supplying a physiologically compatible fluid substitute to the subject through a portion of the blood circulating circuit, a blood pump and a drain pump, a priming fluid source adapted to be connected with the blood outlet and a fluid substitute inlet, a first detector for detecting the flow through the blood circulating circuit, a second detector for detecting the flow through the plasma circulating circuit, a first valve for selectively establishing and interrupting a first fluid circuit between a downstream portion of the plasma circulating circuit adjacent the blood outlet and that portion of the blood circulating circuit downstream of the plasma filter, a second valve for selectively establishing and interrupting a second fluid circuit between the downstream portion of the plasma circulating circuit and the outside of

Abstract: Body cavity fluids, such as ascitic fluid and pleural fluid, are concentrated and filtered to remove bacteria and cancer cells, and the filtered concentrate is returned to the patient intravenously. The concentration and filtration are performed batch-wise, with the concentration being done before the filtration. The apparatus for concentrating and filtering includes a first container for holding the body fluid, a second container for holding the final filtered concentrate, a filter, a concentrator, a pump and two branched tubes connected to the filter and the concentrator which tubes can be selectively closed for concentrating and filtering the body fluid. The fluid outlet of the first container is designed to help prevent precipitated fibrin from passing out of the container and blocking the concentrator or filter membranes.