Abstract: The present invention provides a practically effective three-dimensional photonic crystal, and a process for the production thereof as well as a probe used therefor wherein a three-dimensional photonic crystal comprises a plurality of two-dimensional photonic crystal plates each provided with through holes and different types of two-dimensional photonic crystals; a plurality of positioning members to be located in the above-described through holes in the plurality of the two-dimensional photonic crystal plates; and the above-described positioning members being located in the through holes in the two-dimensional photonic crystal plates adjacent to each other among the pluralities of two-dimensional photonic crystal plates to be laminated in such that the pluralities of the two-dimensional photonic crystal plates obtain a periodic structure in response to wavelengths of light.

Abstract: A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.

Abstract: The present invention provides a practically effective three-dimensional photonic crystal, and a process for the production thereof as well as a probe used therefor wherein a three-dimensional photonic crystal comprises a plurality of two-dimensional photonic crystal plates each provided with through holes and different types of two-dimensional photonic crystals; a plurality of positioning members to be located in the above-described through holes in the plurality of the two-dimensional photonic crystal plates; and the above-described positioning members being located in the through holes in the two-dimensional photonic crystal plates adjacent to each other among the pluralities of two-dimensional photonic crystal plates to be laminated in such that the pluralities of the two-dimensional photonic crystal plates obtain a periodic structure in response to wavelengths of light.

Abstract: The present invention provides a practically effective three-dimensional photonic crystal, and a process for the production thereof as well as a probe used therefor wherein a three-dimensional photonic crystal comprises a plurality of two-dimensional photonic crystal plates each provided with through holes and different types of two-dimensional photonic crystals; a plurality of positioning members to be located in the above-described through holes in the plurality of the two-dimensional photonic crystal plates; and the above-described positioning members being located in the through holes in the two-dimensional photonic crystal plates adjacent to each other among the pluralities of two-dimensional photonic crystal plates to be laminated in such that the pluralities of the two-dimensional photonic crystal plates obtain a periodic structure in response to wavelengths of light.

Abstract: Disclosed is a terminal for an organic material, which comprises a carbon nanotube to be in contact with an organic material having a 6-membered carbon ring, and a metal that is in contact with a part of the carbon nanotube. The carbon nanotube remarkably improves an electric conductivity between the organic material and the metal.

Abstract: An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.

Abstract: The invention provides a laser and a method for the production thereof by which it is possible to fabricate a device on a Si substrate, and to fabricate further an optical device such as an optical memory on the Si substrate. The laser has an Er-doped nano-ultrafine crystalline Si waveguide formed on the Si substrate wherein the Er-doped nano-ultrafine crystalline Si layer is co-doped with oxygen to result in a structure in which Er ion is surrounded by at least one or more oxygen atom(s).

Abstract: A method for the formation of a semiconductor layer by which a defect density of structural defects, particularly a dislocation density of threading dislocations in the resulting semiconductor layer can be remarkably reduced, so that hours of work can be shortened as well as a manufacturing cost can be reduced without requiring any complicated process comprises supplying a structural defect suppressing material for suppressing structural defects in the semiconductor layer onto a surface of the layer of a material from which the semiconductor layer is to be formed.

Abstract: The present invention provides a practically effective three-dimensional photonic crystal, and a process for the production thereof as well as a probe used therefor wherein a three-dimensional photonic crystal comprises a plurality of two-dimensional photonic crystal plates each provided with through holes and different types of two-dimensional photonic crystals; a plurality of positioning members to be located in the above-described through holes in the plurality of the two-dimensional photonic crystal plates; and the above-described positioning members being located in the through holes in the two-dimensional photonic crystal plates adjacent to each other among the pluralities of two-dimensional photonic crystal plates to be laminated in such that the pluralities of the two-dimensional photonic crystal plates obtain a periodic structure in response to wavelengths of light.

Abstract: To provide a low dislocation buffer, which can be formed by a simple process for a short period of time, and there is no fear of producing cracks, a first layer made of a nitride semiconductor containing an impurity at a concentration exceeding its doping level is laminated a predetermined number of times alternately with a second layer made of a nitride semiconductor containing no impurity on a substrate to form a superlattice structure in a low dislocation buffer formed between the substrate and a nitride semiconductor as a device material to be formed for constituting a device structure on the substrate.

Abstract: In order to make preparation of a semiconductor material having a high conductance possible by increasing a carrier concentration even in a case where a crystal layer is doped with p-type impurity raw materials and n-type impurity raw materials, an impurity doping method for semiconductor wherein a crystal layer made of crystal raw materials is doped with impurities, comprises each of plural types of impurity raw materials being supplied at close timings in a pulsed manner within one cycle wherein all types of the crystal raw materials are supplied in one time each in the case when plural types of the crystal raw materials are alternately supplied in a pulsed manner with maintaining each of predetermined purge times.

Abstract: A single-flux-quantum digital device includes a first superconducting line extended in a large ring, a second superconducting line connected to the first superconducting line, a superconducting single electron transistor for regulating a supercurrent flowing through the second superconducting line, and a small tunnel junction device for detecting a change in the supercurrent flowing through the first superconducting line. The first superconducting line is extended in a large ring. The second superconducting line divides the large ring into two small rings which are substantially the same in shape and area. The small tunnel junction device is connected to a point where the first and the second superconducting line are joined.

Abstract: For the purpose of emitting light in an ultraviolet short-wavelength region having a wavelength of 360 nm or shorter, it is arranged in InAlGaN in such that a ratio of composition of In is 2% to 20%, a ratio of composition of Al is 10% to 90%, and a total of ratios of composition in In, Al, and Ga is 100%.

Abstract: An apparatus for dry cleaning a surface includes a laser generator, a laser beam homogenizer, an aperture and a lens that are controlled by a CPU. The laser is preferably a KrF excimer laser although any laser capable of generating a pulsed output in the ultraviolet spectrum may be used. The lens is preferably a plano-convex lens. Articles to be cleaned are placed on a conveyor that transports the article through the laser beam. The CPU can store parameters for optimizing removal of a particular contaminant. These parameters may include the frequency of the pulse beam generated by the laser, the shape of the aperture, the position of the lens is controlled by a stage, and the speed of the conveyor belt.

Abstract: A method for the formation of a semiconductor layer by which a defect density of structural defects, particularly a dislocation density of threading dislocations in the resulting semiconductor layer can be remarkably reduced, so that hours of work can be shortened as well as a manufacturing cost can be reduced without requiring any complicated process comprises supplying a structural defect suppressing material for suppressing structural defects in the semiconductor layer onto a surface of the layer of a material from which the semiconductor layer is to be formed.

Abstract: An X-ray generating apparatus in which X-rays are emitted from laser plasma, the X-ray generating apparatus including a strong magnetic field generating device for generating a magnetic field component substantially parallel with the target surface in the vicinity of the laser plasma. The magnetic field component is arranged to generate a magnetic force which acts directly on charged particles in the laser plasma to bend the tracks of the charged particles, causing the charged particles to be confined in a magnetic field formed by the magnetic field component. The magnetic flux of the strong magnetic field is directed to a direction which is different from the direction in which the laser plasma is generated. An X-ray supply object is disposed in the laser plasma generating direction. Charged particles, liable to be directed to the X-ray supply object, are mainly confined in the strong magnetic field.

Abstract: An X-ray microscope utilizing X-rays radiating from a laser-irradiated target so as to form an X-ray image of a specimen placed in a sample cell, the X-ray microscope includes a target for radiating X-rays when the same is irradiated with a laser beam, a sample cell for housing a specimen, the sample cell provided near the surface of target placed opposite to where the target is irradiated with the laser beam, and a detector for forming an X-ray image of the specimen by X-ray penetration, wherein the target, the sample cell and the detector are unified in a unit. The unit is placed at a place where the laser beam is irradiated to the target. A spacer is provided between the target and the sample cell, wherein the size of the spacer is determined depending on a distance between the specimen and the target. With this construction, this facilitates the fabrication of the unit.

Abstract: An X-ray generating apparatus generates X-rays from plasma formed by irradiating a laser beam to a target. The apparatus includes an X-ray transmitting film disposed at at least one side of the target with a predetermined gap provided therebetween. The X-ray transmitting film has a thickness such that the film is not broken due to an action in the X-ray generating process. The X-rays are taken out through the X-ray transmitting film. An X-ray microscope can employ such an X-ray generating apparatus, with the X-rays from the apparatus being guided to the sample, with the sample to be observed being disposed in the vicinity of the X-ray transmitting film, and with a detecting device for detecting an X-ray image formed by X-rays transmitted through the sample.

Abstract: An ion-producing apparatus comprises an electron-producing vessel having an electron-producing chamber, an ion-producing vessel having an ion-producing chamber communicating with the electron-producing chamber, a cathode provided at one end of the electron-producing vessel, an accelerating electrode provided within the ion-producing chamber, for allowing passage of electrons, an anode provided between the cathode and the accelerating electrode, and a power supply circuit for providing a potential difference between the cathode and the anode, thereby to produce electrons in the gap between the cathode and the anode. A vacuum pump is provided for evacuating gas from the ion-producing chamber. A partition is provided within the electron-producing vessel, between the cathode and the anode to divide the electron-producing vessel into a cathode-side chamber and an anode-side chamber, and hinders a gas flow from the cathode-side chamber to the anode-side chamber to apply a pressure difference between both chambers.

Abstract: An electron beam-excited ion beam source having a plasma region, an accelerating cathode, an electron beam accelerating region, an accelerating anode, an ion producing region and a target cathode in this order, and further comprising means for applying a negative electric potential to the target cathode as against the accelerating cathode and an ion extracting electrode for extracting positive ions or negative ions produced in the ion producing region whereby a high current ion beam can be obtained in a low input power.