Abstract: A plasma processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) providing a substrate including a silicon-containing film and a mask formed on the film; (b) etching the silicon-containing film through the mask to the first depth, thereby forming a recess in the silicon-containing film; (c) forming a protection film at least on the mask and a side wall of the recess formed on the silicon-containing film after (a); and (d) etching the silicon containing film through the mask to a second depth, the second depth being greater than the first depth.

Abstract: A processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film; (b) forming a protection film on a side wall of the recess with a second plasma in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and (c) etching the silicon-containing film to a second depth with the third plasma in the chamber, the second depth being greater than the first depth.

Abstract: A processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film; (b) forming a protection film on a side wall of the recess with a second plasma in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and (c) etching the silicon-containing film to a second depth with the third plasma in the chamber, the second depth being greater than the first depth.

Abstract: A plasma processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) providing a substrate including a silicon-containing film and a mask formed on the film; (b) etching the silicon-containing film through the mask to the first depth, thereby forming a recess in the silicon-containing film; (c) forming a protection film at least on the mask and a side wall of the recess formed on the silicon-containing film after (a); and (d) etching the silicon containing film through the mask to a second depth, the second depth being greater than the first depth.

Abstract: There is provided a substrate processing system including an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon, a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon.

Abstract: A protrusion forming device includes a holding portion holding an object that is be processed, a tool bit having a cutting portion capable of cutting an object held by a holding portion, and a drive portion capable of driving the tool bit. The tool bit is movable along a cut-in pathway so that the cutting portion is inserted into the object. The cutting portion is movable along a further-cut pathway so as to form a protrusion part that is cut in a linear shape and is connected to the object. The tool bit continuously contacts the protrusion part while moving along a forming pathway such that the protrusion part extends perpendicular to an outer surface of the object.

Abstract: A plasma processing apparatus can efficiently perform a pulse modulation method of switching a high frequency power to be used in a plasma process between a high level and a low level alternately according to a duty ratio of a modulation pulse. In this plasma processing apparatus, when performing a high/low pulse modulation on the high frequency power for plasma generation, if a weighted variable K is set to be 0.5<K<1, a constant reflection wave power PRH is generated on a high frequency transmission line of a plasma generation system even during a pulse-on period Ton. Meanwhile, during a pulse-off period Toff, a reflection wave power PRL decreases. By adjusting the value of K, a balance between the reflection wave power PRH during the pulse-on period Ton and the reflection wave power PRL during the pulse-off period Toff can be controlled.

Abstract: A plasma etching method can form a hole having a required opening diameter in a silicon nitride layer, while suppressing a tip end portion of the hole from being narrowed. The plasma etching method includes a first process of supplying a processing gas containing oxygen and fluorocarbon into a plasma processing apparatus; and a second process of etching a silicon nitride layer 106a of a processing target object with a first mask 106 by exciting the processing gas into plasma. Further, the second process is performed in a state where an organic film ad generated from the processing gas is formed on an inner wall of an opening of the first mask 106 by gradually reducing a temperature of the processing target object from a first temperature T1 (80° C.) to a second temperature T2 (40° C.).

Abstract: Provided is a packaged beverage subjected to heat sterilization, including the following components (A) and (B): (A) 2.5 mass % or more of a protein; and (B) non-polymer catechins, the packaged beverage having: a mass ratio between the component (A) and the component (B), [(B)/(A)], of from 0.02 to 0.1; a viscosity of from 15 to 35 mPa·s; and a pH of 6.3 or more.

Abstract: There is provided a substrate processing system including an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon, a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon.

Abstract: A protrusion forming device includes a holding portion holding an object that is be processed, a tool bit having a cutting portion capable of cutting an object held by a holding portion, and a drive portion capable of driving the tool bit. The tool bit is movable along a cut-in pathway so that the cutting portion is inserted into the object. The cutting portion is movable along a further-cut pathway so as to form a protrusion part that is cut in a linear shape and is connected to the object. The tool bit continuously contacts the protrusion part while moving along a forming pathway such that the protrusion part extends perpendicular to an outer surface of the object.

Abstract: A plasma etching method can form a hole having a required opening diameter in a silicon nitride layer, while suppressing a tip end portion of the hole from being narrowed. The plasma etching method includes a first process of supplying a processing gas containing oxygen and fluorocarbon into a plasma processing apparatus; and a second process of etching a silicon nitride layer 106a of a processing target object with a first mask 106 by exciting the processing gas into plasma. Further, the second process is performed in a state where an organic film ad generated from the processing gas is formed on an inner wall of an opening of the first mask 106 by gradually reducing a temperature of the processing target object from a first temperature T1 (80° C.) to a second temperature T2 (40° C.).

Abstract: Provided is a packaged beverage subjected to heat sterilization, including the following components (A) and (B): (A) 2.5 mass % or more of a protein; and (B) non-polymer catechins, the packaged beverage having: a mass ratio between the component (A) and the component (B), [(B)/(A)], of from 0.02 to 0.1; a viscosity of from 15 to 35 mPa·s; and a pH of 6.3 or more.

Abstract: Provided is a concentrated coffee extract solution having a rich sweet aroma and a clear aftertaste. The concentrated coffee extract solution contains the following components (A) and (B): (A) at least one pyrazine selected from 2-methylpyrazine, 2,5-dimethylpyrazine, 2,6-dimethylpyrazine, ethylpyrazine, 2-ethyl-5-methylpyrazine, 2-ethyl-6-methylpyrazine, 2-ethyl-3-methylpyrazine, 2-ethyl-3,5-dimethylpyrazine and 3,5-dimethyl-2-methylpyrazine, and (B) at least one guaiacol selected from guaiacol, 4-ethylguaiacol and 4-vinylguaiacol. A content weight ratio [(B)/(A)] of the component (B) to the component (A) is 0.6 or smaller.

Abstract: A plasma processing apparatus can efficiently perform a pulse modulation method of switching a high frequency power to be used in a plasma process between a high level and a low level alternately according to a duty ratio of a modulation pulse. In this plasma processing apparatus, when performing a high/low pulse modulation on the high frequency power for plasma generation, if a weighted variable K is set to be 0.5<K<1, a constant reflection wave power PRH is generated on a high frequency transmission line of a plasma generation system even during a pulse-on period Ton. Meanwhile, during a pulse-off period Toff, a reflection wave power PRL decreases. By adjusting the value of K, a balance between the reflection wave power PRH during the pulse-on period Ton and the reflection wave power PRL during the pulse-off period Toff can be controlled.

Abstract: Provided is a method of etching a silicon oxide film. The method includes exposing a workpiece including the silicon oxide film and a mask formed on the silicon oxide film to plasma of a processing gas to etch the silicon oxide film. The mask includes a first film formed on the silicon oxide film and a second film formed on the first film, and the second film is constituted by a film having an etching rate lower than that of the first film with respect to active species in the plasma.

Abstract: Disclosed is a container-packed black coffee beverage which has an excellent hypertension ameliorating effect and can be ingested in an ordinary manner. A container-packed black coffee satisfying the following requirements (A) to (C): (A) a chlorogenic acid: 0.01 to 1% by mass; (B) hydroxyhydroquinone: 0.1% by mass or less relative to the mass of the chlorogenic acid; and (C) the chlorogenic acid/a coffee solid content ?0.025 (by mass).

Abstract: Provided is a method of etching a silicon oxide film. The method includes exposing a workpiece including the silicon oxide film and a mask formed on the silicon oxide film to plasma of a processing gas to etch the silicon oxide film. The mask includes a first film formed on the silicon oxide film and a second film formed on the first film, and the second film is constituted by a film having an etching rate lower than that of the first film with respect to active species in the plasma.

Abstract: A method of supplying an etching gas includes: supplying a first etching gas used in an etching process into a processing container; and supplying a second etching gas used in the etching process into the processing container, in which, when the first etching gas and the second etching gas are switched therebetween, only a small amount of a gas, which is needed as an etching gas before the switching and is not needed as an etching gas after the switching, is continuously supplied into the processing container.

Abstract: Provided is a concentrated coffee extract solution having a rich sweet aroma and a clear aftertaste. The concentrated coffee extract solution contains the following components (A) and (B): (A) at least one pyrazine selected from 2-methylpyrazine, 2,5-dimethylpyrazine, 2,6-dimethylpyrazine, ethylpyrazine, 2-ethyl-5-methylpyrazine, 2-ethyl-6-methylpyrazine, 2-ethyl-3-methylpyrazine, 2-ethyl-3,5-dimethylpyrazine and 3,5-dimethyl-2-methylpyrazine, and (B) at least one guaiacol selected from guaiacol, 4-ethylguaiacol and 4-vinylguaiacol. A content weight ratio [(B)/(A)] of the component (B) to the component (A) is 0.6 or smaller.