Abstract: A motor includes a rotor, a stator having a cylindrical shape, disposed on a radial-direction outer side of the rotor, and surrounding the rotor, and a housing having a cylindrical shape, disposed on the radial-direction outer side of the stator, and housing the rotor and the stator. The stator includes teeth disposed along a circumferential direction and extending in a radial direction, and coils wound around the teeth. A hermetically sealed chamber filled with a cooling medium is provided between the housing and the rotor. A space housing the rotor core is provided on a radial-direction inner side of the sealed chamber that includes an inner chamber housing the coils, outer chambers disposed on the radial-direction outer side of the inner chamber and extend in the circumferential direction, and upper and lower connection portions located vertically above or below a shaft and connect the inner chamber to the outer chambers.

Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

Abstract: A motor includes a rotating shaft, a rotor, a stator, a bracket, and a control device mounted on the bracket. The bracket includes a cylindrical bracket main body, and a stator frame which faces the bracket main body across a clearance and holds an outer surface of the stator on the radially inward side of the bracket main body. The control device is mounted on the bracket main body. The bracket is provided with a cooling passage, and an inflow port and an outflow port connected with the cooling passage. The cooling passage includes a control device cooling passage provided between the bracket main body and the control device, a stator cooling passage provided between the bracket main body and the stator frame, and a communication passage coupling the control device cooling passage and the stator cooling passage.

Abstract: Disclosed is a granular adhesive comprising adhesive particles, wherein the adhesive particles include a core containing an adhesive composition, a shell covering the core, and an enclosed gas, and the shell includes solid particles.

Abstract: An organic EL display apparatus includes a substrate, and a pixel circuit provided for each pixel. The pixel circuit includes a first oxide semiconductor TFT having a first oxide semiconductor layer, and a second oxide semiconductor TFT having a second oxide semiconductor layer. The first oxide semiconductor TFT has a top-gate structure. The second oxide semiconductor TFT has a bottom-gate structure. The second oxide semiconductor TFT has a shield electrode that is disposed on an insulating layer disposed on the second oxide semiconductor layer, facing the second oxide semiconductor layer.

Abstract: A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.

Abstract: In a demultiplexer circuit, each unit circuit includes at least n TFTs 30 and n branch lines connected with one video signal line. Each TFT 30 includes an oxide semiconductor layer 7, an upper gate electrode 11 provided on the oxide semiconductor layer with a gate insulating layer 9 interposed therebetween, and a first electrode 13 and a second electrode 15. The demultiplexer circuit further includes a first interlayer insulating layer 21 covering the oxide semiconductor layer and the upper gate electrode and a second interlayer insulating layer 23 provided on the first interlayer insulating layer. The first electrode 13 is provided between the first interlayer insulating layer 21 and the second interlayer insulating layer 23 and is in contact with the oxide semiconductor layer inside a first contact hole CH1 formed in the first interlayer insulating layer.

Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

Abstract: Provided is an image processing apparatus including a print image generation section that generates print image data to be supplied to a printing device by executing a rasterizing process and an additional process for printing on print data, and an image density calculation section that executes the rasterizing process on the print data without the additional process and calculates image density information used in control of an image forming process in the printing device from raster image data generated through the rasterizing process to process the print data at a speed higher than a speed in print image generation section, wherein a difference in a processing speed between the print image generation section and the image density calculation section causes image density information of a page prior to a page of the print image data printed by the printing device to be supplied to the printing device.

Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

Abstract: Provided is an image processing apparatus including a print image generation section that generates print image data to be supplied to a printing device by executing a rasterizing process with a resolution for printing on print data, and an image density calculation section that executes the rasterizing process on the print data with a resolution lower than the resolution for printing and calculates image density information used in control of an image forming process in the printing device based on raster image data which is generated through the rasterizing process and has a resolution lower than the resolution for printing, wherein a difference in a processing speed between the print image generation section and the image density calculation section causes the image density information of a page prior to a page of the print image data being printed by the printing device to be supplied to the printing device.

Abstract: A cooling device and a motor are provided. The cooling device that cools a heating element is provided with: a cooling chamber for cooling the heating element with a first cooling medium; a radiator chamber for releasing the heat of the first cooling medium to the outside; and a first connection path and a second connection path for connecting the cooling chamber and the radiator chamber. When part of the first cooling medium in the cooling chamber is gasified, at least part of the gasified first cooling medium moves into the first connection path, thus causing a circulation in which the first cooling medium in the cooling chamber flows into the radiator chamber via the first connection path, and the first cooling medium in the radiator chamber flows into the cooling chamber via the second connection path.

Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

Abstract: There are provided a granular adhesive agent including a core portion and a shell portion, wherein the core portion including an adhesive composition and the shell portion is formed from solid particles, and a method for producing a granular adhesive agent. It is preferred that the solid particles include fine particles with a number average particle diameter of less than or equal to 500 ?m as the main component. The granular adhesive agent according to the present invention is excellent in handling properties.

Abstract: To provide an apparatus for manufacturing a rubber strip in which damages such as cracks occurring in ceramic outer layers of calender rolls can be suppressed, and which is capable of rolling the rubber strip continuously for a long period of time. [Solution] It is an apparatus 1 for manufacturing a rubber strip having a rubber extruder 2 having a discharge port 2a for continuously discharging the rubber, and a pair of upper and lower calender rolls 3, 3 for rolling the rubber discharged from the discharge port 2a to form a rubber strip G. Each of the calender rolls 3 includes a roll main body 7 which is driven to rotate, and a cylindrical outer layer 8 which is concentrically disposed on the outside of the roll main body 7 to roll the rubber by its outer peripheral surface 8S. The outer layer 8 is made of a ceramic. Between the outer layer 8 and the roll main body 7, a gap P is provided. In the gap P, an O-ring 10 for rotating the outer layer 8 integrally with the roll main body 7 is inserted.

Abstract: A motor may include a stator having coil groups of plural phases and a connector, the stator comprising a plurality of split stators. Each of the split stators may include a split core having an arc-shaped core back section and a tooth section, an insulator, a coil which has a lead-out line that is connected to the connector. The insulator may have a first void extending between a first inner wall and a first outer wall. The first inner wall may have a lead-in groove. The stator may have a support ring disposed on the upper side of the first void. The support ring may have a second void extending between a second inner wall and a second outer wall. A plurality of lead-out lines of different phases may respectively accommodated in the first void and the second void.

Abstract: An object of the present invention is to provide a motor which has a maintenance port and of which the wire is insusceptible to disturbance noise. The motor includes: a bracket housing a rotor and a stator; a control device housing part located on the radial direction outside of the bracket; a control device located inside the control device housing part; a sensor housing part located at the end of the bracket on the side opposite to an output end; a motor sensor mounted at the end of a rotating shaft on the side opposite to the output end; and a coupling connector connecting the motor sensor and the control device with each other. The control device housing part and the sensor housing part communicate with each other. The coupling connector is located inside the sensor housing part. The sensor housing part has a port which has an opening in the axial direction, and the port and the coupling connector at least partially overlap with each other in the axial direction.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes processing a substrate by supplying a process gas to the substrate in a process chamber. The method further includes performing a purge to an interior of the process chamber while periodically changing an internal pressure of the process chamber based on a pressure width by setting a process of supplying a purge gas into the process chamber to increase the internal pressure of the process chamber and a process of vacuum-exhausting an interior of the process chamber to decrease the internal pressure of the process chamber to one cycle and repeating the cycle a plurality of times.

Abstract: A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times after supplying a nitriding gas to the substrate. The cycle includes performing the following steps in the following order: supplying a carbon-containing gas to the substrate; supplying a predetermined element-containing gas to the substrate; supplying the carbon-containing gas to the substrate; supplying an oxidizing gas to the substrate; and supplying the nitriding gas to the substrate.