Abstract: A random access memory includes a data signal line, a data-synchronization signal line for a data synchronization signal which provides a synchronization signal when data is transmitted to the data signal line, and a setting module. The setting module determines whether the data signal line is set to be a data signal line for common input/output use, a data signal line for output-only use, or a data signal line for input-only use, and further determines whether the data-synchronization signal line is set to be a data-synchronization signal line for common input/output use, a data-synchronization signal line for output-only use, or a data-synchronization signal line for input-only use.

Abstract: The present invention has an object of providing a high-speed, low-cost, and user-friendly information processing system that can ensure scalability of memory capacity. The information processing system is configured to include an information processing device, a volatile memory, and a nonvolatile memory. By serially connecting the information processing device, the volatile memory, and the nonvolatile memory and reducing the number of connection signals, processing speed is increased while maintaining the scalability of memory capacity. When transferring data of the nonvolatile memory to the volatile memory, error correction is performed, thereby improving reliability. The information processing system including the plurality of chips is configured as an information-processing system module in which the chips are alternately stacked and arranged, and wired by a ball grid array (BGA) or by bonding between the chips.

Abstract: The present invention has an object of providing a high-speed, low-cost, and user-friendly information processing system that can ensure scalability of memory capacity. The information processing system is configured to include an information processing device, a volatile memory, and a nonvolatile memory. By serially connecting the information processing device, the volatile memory, and the nonvolatile memory and reducing the number of connection signals, processing speed is increased while maintaining the scalability of memory capacity. When transferring data of the nonvolatile memory to the volatile memory, error correction is performed, thereby improving reliability. The information processing system including the plurality of chips is configured as an information-processing system module in which the chips are alternately stacked and arranged, and wired by a ball grid array (BGA) or by bonding between the chips.

Abstract: A semiconductor device has a ZQ circuit (40) which generates impedance control information and an output buffer having an impedance controlled in response to the impedance control information. A plurality of control bits constituting the impedance control information are serially transferred from the ZQ circuit.

Abstract: A semiconductor device includes a multiplexer and an output buffer. The multiplexer includes: n switches (n is an integer of 2 or greater) each including an input node receiving a different data signal and an output node coupled to an input node of the output buffer; and a plurality of switch control circuits each corresponding to a respective one of the n switches. Each of the plurality of switch control circuits turns on a corresponding one of the n switches based on a corresponding one of the signals each having a first cycle and a phase different by 1/n of the cycle from adjacent phases. When each of the plurality of switch control circuits detects that an input-side data signal of the corresponding one of the n switches appears at a corresponding output-side node, each of the plurality of switch control circuits turns off the corresponding switch.

Abstract: A semiconductor device has a ZQ circuit (40) which generates impedance control information and an output buffer having an impedance controlled in response to the impedance control information. A plurality of control bits constituting the impedance control information are serially transferred from the ZQ circuit.

Abstract: A semiconductor device includes a multiplexer and an output buffer. The multiplexer includes: n switches (n is an integer of 2 or greater) each including an input node receiving a different data signal and an output node coupled to an input node of the output buffer; and a plurality of switch control circuits each corresponding to a respective one of the n switches. Each of the plurality of switch control circuits turns on a corresponding one of the n switches based on a corresponding one of the signals each having a first cycle and a phase different by 1/n of the cycle from adjacent phases. When each of the plurality of switch control circuits detects that an input-side data signal of the corresponding one of the n switches appears at a corresponding output-side node, each of the plurality of switch control circuits turns off the corresponding switch.

Abstract: A semiconductor memory device includes a plurality of banks, each of which is constituted of a plurality of memory cell arrays that are aligned in series in the longitudinal direction, wherein each memory cell array includes a plurality of memory cells, and wherein memory cell arrays of banks are collectively aggregated into a plurality of blocks, each of which includes memory cell arrays aligned in the perpendicular direction, in connection with a plurality of DQ pads. DQ pads are arranged in proximity to blocks. Substantially the same distance is set between memory cells and DQ pads so as to reduce dispersions in access times with respect to all DQ pads, thus achieving high-speed access in the semiconductor memory device. The wiring region of IO lines is reduced in the center area of the chip.

Abstract: A semiconductor device includes a column decoder that generates a column selecting signal that selects any of a plurality of bit line pairs to which memory cells are connected according to a column address that is input; a bit line selecting switch that connects by the column selecting signal any of a plurality of bit line pairs and a data I/O line pair that outputs data that has been read from a memory cell to the outside; a data amplifier that amplifies a voltage differential of a data I/O line pair and outputs data that has been read to an output buffer; a data I/O line switch that is provided in the data I/O lines; an I/O line precharge circuit that precharges a data I/O line pair that is not on the side of the data amplifier; and an amplifier precharge circuit that precharges a data I/O line pair that is on the side of the data amplifier.

Abstract: The present invention has an object of providing a high-speed, low-cost, and user-friendly information processing system that can ensure scalability of memory capacity. The information processing system is configured to include an information processing device, a volatile memory, and a nonvolatile memory. By serially connecting the information processing device, the volatile memory, and the nonvolatile memory and reducing the number of connection signals, processing speed is increased while maintaining the scalability of memory capacity. When transferring data of the nonvolatile memory to the volatile memory, error correction is performed, thereby improving reliability. The information processing system including the plurality of chips is configured as an information-processing system module in which the chips are alternately stacked and arranged, and wired by a ball grid array (BGA) or by bonding between the chips.

Abstract: A random access memory includes a data signal line, a data-synchronization signal line for a data synchronization signal which provides a synchronization signal when data is transmitted to the data signal line, and a setting module. The setting module determines whether the data signal line is set to be a data signal line for common input/output use, a data signal line for output-only use, or a data signal line for input-only use, and further determines whether the data-synchronization signal line is set to be a data-synchronization signal line for common input/output use, a data-synchronization signal line for output-only use, or a data-synchronization signal line for input-only use.

Abstract: A semiconductor memory device includes a plurality of banks, each of which is constituted of a plurality of memory cell arrays that are aligned in series in the longitudinal direction, wherein each memory cell array includes a plurality of memory cells, and wherein memory cell arrays of banks are collectively aggregated into a plurality of blocks, each of which includes memory cell arrays aligned in the perpendicular direction, in connection with a plurality of DQ pads. DQ pads are arranged in proximity to blocks. Substantially the same distance is set between memory cells and DQ pads so as to reduce dispersions in access times with respect to all DQ pads, thus achieving high-speed access in the semiconductor memory device. The wiring region of IO lines is reduced in the center area of the chip.

Abstract: A semiconductor device includes a column decoder that generates a column selecting signal that selects any of a plurality of bit line pairs to which memory cells are connected according to a column address that is input; a bit line selecting switch that connects by the column selecting signal any of a plurality of bit line pairs and a data I/O line pair that outputs data that has been read from a memory cell to the outside; a data amplifier that amplifies a voltage differential of a data I/O line pair and outputs data that has been read to an output buffer; a data I/O line switch that is provided in the data I/O lines; an I/O line precharge circuit that precharges a data I/O line pair that is not on the side of the data amplifier; and an amplifier precharge circuit that precharges a data I/O line pair that is on the side of the data amplifier.

Abstract: A user-friendly data processing system apparatus which ensures the expandability of memory capacity and high speed processing with low cost is provided. The data processing system is composed of a data processing unit, a volatile memory and a nonvolatile memory. The data processing unit, the volatile memory and the nonvolatile memory are connected in series and by reducing the number of connection signals fast processing is realized while maintaining the memory capacity expandability. Upon transferring a data of the nonvolatile memory to the volatile memory, an error correction is executed, therefore, the reliability is improved. The data processing system composed of the plurality of memory chips is formed as a data processing system module in which the each chips are stacked and arranged, and wiring is formed by ball grid array (BGA) and bonding between the chips.

Abstract: The positions of the main driver 10, the output pad 20 and the first buffer 61 and the second buffer 62 are changed from the central region 111 to the peripheral region 120, and the first control signal line 31 and the second control signal line 32 are elongated. The distance between the output pad 20 and the main driver 10 is maintained so that the resistance between the output pad 20 and the main driver 10 does not increase.

Abstract: The positions of the main driver 10, the output pad 20 and the first buffer 61 and the second buffer 62 are changed from the central region 111 to the peripheral region 120, and the first control signal line 31 and the second control signal line 32 are elongated. The distance between the output pad 20 and the main driver 10 is maintained so that the resistance between the output pad 20 and the main driver 10 does not increase.

Abstract: A simple structure is provided for a cell accommodating portion of a device, in which a cover of the device is closed whether the device is being used or unused, and a cell lid of the device is prevented from being disengaged from the device. In a structure for a cell accommodating portion of a device, a protrusion piece provided on a cell lid is positioned inside the cover thereof under a condition, where the cell lid for covering the cell accommodating portion of the device, which consists of a body and an openable and closeable cover, is engaged with the device when the cover is closed. As a result, the cell lid is prohibited from sliding on the device and is prevented from being disengaged from the device for as long as the cover is closed.

Abstract: There is provided a simple structure for a cell accommodating portion of a device, in which a cover of the device is closed when the device is being used as usual or when the device is unused and a cell lid of the device resists being disengaged from the device. In a structure for a cell accommodating portion of a device, a protrusion piece provided on a cell lid is in a position inside a cover thereof, under a condition where the cell lid for covering the cell accommodating portion of the device which consists of a body and an openable or closeable cover, is provided with the protrusion piece, the cell lid is engaged with the device, and the cover is closed. As a result, the cell lid is prohibited from sliding on the device and is prevented from being disengaged from the device as long as the cover is opened.

Abstract: Disclosed is a device for supporting a training for prevention against incontinence of urine, comprising: an input unit; an indicator unit; a decision unit; and a display unit. The input unit enters the fact that a user is performing the training for prevention against incontinence of urine, and the indicator unit produces a timing indication for the training for prevention against incontinence of urine. Furthermore, the decision unit determines that the training for prevention against incontinence of urine is correctly performed on the basis of the input signal sent from the input unit, and the display unit performs displaying according to the result of decision made by the decision unit.

Abstract: A semiconductor memory device has a device identification code to see whether or not a packet signal is addressed thereto, and a timing generator starts a control sequence for a data access in response to a hit signal representative of the consistency between the stored device identification code and an input device identification code incorporated in the packet signal, wherein a signal receiving circuit is shared between the packet signal and a test signal representative of instructions for burn-in test, and a logic gate is provided for directly generating the hit signal from an internal mode signal representative of the test mode so that the timing generator starts the control sequence in the burn-in test regardless of the consistency between the test signal and the stored device identification code.