Abstract: A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.

Abstract: A vapor deposition mask includes: a metal mask in which a metal mask opening is provided; and a resin mask in which a resin mask opening corresponding to a pattern to be produced by vapor deposition is provided at a position overlapping with the metal mask opening, the metal mask and the resin mask being stacked, wherein an arithmetic average height (Sa) of a surface of the resin mask exposed from the metal mask opening is not more than 0.8 ?m.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.

Abstract: In a method for forming a vapor deposition pattern using a vapor deposition mask provided with a plurality of openings corresponding to a pattern that is produced by vapor deposition, and forming a vapor deposition pattern in a vapor deposition target, the method includes a close contact step of disposing the vapor deposition mask on one surface side of the vapor deposition target, disposing a pressing member and a magnetic plate in layer in this order on the other surface side of the vapor deposition target, and bringing the vapor deposition target and the vapor deposition mask into close contact with each other by using magnetism of the magnetic plate, and a vapor deposition pattern forming step of causing a vapor deposition material released from a vapor deposition source to adhere to the vapor deposition target through openings after the close contact step, and forming the vapor deposition pattern in the vapor deposition target.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.

Abstract: In a method for forming a vapor deposition pattern using a vapor deposition mask provided with a plurality of openings corresponding to a pattern that is produced by vapor deposition, and forming a vapor deposition pattern in a vapor deposition target, the method includes a close contact step of disposing the vapor deposition mask on one surface side of the vapor deposition target, disposing a pressing member and a magnetic plate in layer in this order on the other surface side of the vapor deposition target, and bringing the vapor deposition target and the vapor deposition mask into close contact with each other by using magnetism of the magnetic plate, and a vapor deposition pattern forming step of causing a vapor deposition material released from a vapor deposition source to adhere to the vapor deposition target through openings after the close contact step, and forming the vapor deposition pattern in the vapor deposition target.

Abstract: A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.

Abstract: A vapor deposition mask includes: a metal mask in which a metal mask opening is provided; and a resin mask in which a resin mask opening corresponding to a pattern to be produced by vapor deposition is provided at a position overlapping with the metal mask opening, the metal mask and the resin mask being stacked, wherein an arithmetic average height (Sa) of a surface of the resin mask exposed from the metal mask opening is not more than 0.8 ?m.

Abstract: A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.

Abstract: To provide a vapor deposition mask in which a metal layer is provided on a resin mask, in which the resin mask has an opening required to form a vapor deposition pattern, the resin mask contains a resin material, the metal layer contains a metal material, and provided that a glass transition temperature (Tg) of the resin material plus 100° C. is an upper limit temperature, in a linear expansion graph whose vertical axis indicates linear expansion rate and whose horizontal axis indicates temperature, an integrated value of a linear expansion curve for the resin mask over a range from a temperature of 25° C. to the upper limit temperature divided by an integrated value of a linear expansion curve for the metal layer over the range from the temperature of 25° C. to the upper limit temperature falls within a range from 0.55 to 1.45 inclusive.

Abstract: A method for producing a multiple-surface imposition vapor deposition mask that enhances definition and reduces weight even when a size is increased. Each of multiple masks in an open space in a frame is configured by a metal mask having a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows. In formation of the plurality of masks, after each of the metal masks and a resin film material for producing the resin mask are attached to the frame, the resin film material is processed, and the openings corresponding to the pattern to be produced by vapor deposition are formed in a plurality of rows lengthwise and crosswise, whereby the multiple-surface imposition vapor deposition mask of the above described configuration is produced.

Abstract: A vapor deposition mask includes: a metal mask in which a metal mask opening is provided; and a resin mask in which a resin mask opening corresponding to a pattern to be produced by vapor deposition is provided at a position overlapping with the metal mask opening, the metal mask and the resin mask being stacked, wherein an arithmetic average height (Sa) of a surface of the resin mask exposed from the metal mask opening is not more than 0.8 ?m.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.

Abstract: A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.

Abstract: A method for producing a multiple-surface imposition vapor deposition mask that enhances definition and reduces weight even when a size is increased. Each of multiple masks in an open space in a frame is configured by a metal mask having a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows. In formation of the plurality of masks, after each of the metal masks and a resin film material for producing the resin mask are attached to the frame, the resin film material is processed, and the openings corresponding to the pattern to be produced by vapor deposition are formed in a plurality of rows lengthwise and crosswise, whereby the multiple-surface imposition vapor deposition mask of the above described configuration is produced.

Abstract: A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.

Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.

Abstract: A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.