Abstract: In a pixel unit, cells are arranged in rows and columns two-dimensionally. Each of the cells accumulates signal charge obtained by photoelectrically converting light incident on photoelectric conversion section and outputs a voltage corresponding to the accumulated signal charge. On the cells, W, R, G, and B color filters are provided. Analog signals output from the W pixel, R pixel, G pixel, and B pixel are converted into digital signals by an analog/digital converter circuit, which outputs a W signal, an R signal, a G signal, and a B signal separately. A W signal saturated signal quantity is controlled by a saturated signal quantity control circuit. Then, a signal generator circuit corrects the R signal, the G signal, and the B signal using the W signal, the R signal, the G signal, and B signal output from the analog/digital converter circuit and outputs the corrected R, G, and B signals.

Abstract: A solid-state imaging device includes a semiconductor substrate, a first pixel with a green color filter, a second pixel with a blue color filter and a third pixel with a red color filter. The first pixel includes a first area for generating an electric signal by photoelectric conversion, disposed in a first trench that is formed on a surface of the semiconductor substrate, and a first transistor area that outputs the electric signal obtained from the first area. The second pixel includes a second area formed in a flat shape on the surface of the semiconductor substrate, and a second transistor area that outputs the electric signal obtained from the second area. The third pixel includes a third area formed in a flat shape on the surface of the semiconductor substrate, and a third transistor area that outputs the electric signal obtained from the third area.

Abstract: In a pixel unit, W, R, G, and B pixels are arranged in rows and columns. The pixel unit output W, R, G, and B signals obtained by photoelectrically converting light incident on the W, R, G, and B pixels. An edge detection unit determines a specific area having a W pixel provided with a white filter as a central pixel in the pixel unit, divides the specific area into blocks including the central pixel, and detects edge information as to whether there is an edge of an image in each of the blocks. A block select unit selects a block with no edge from the edge information. A ratio calculating unit calculates the ratio coefficients of the R, G, and B signals from the selected block. An RGB signal generator generates new R, G, and B signals from the W signal of the central pixel using the ratio coefficients.

Abstract: There is provided a single-chip color solid-state imager of a backside illumination type having high sensitivity and low noise that facilitates the miniaturization of a pixel size. A pixel readout circuit is selectively disposed on a part of pixels of a readout block consisting of a plurality of pixels that share the pixel readout circuit.

Abstract: An infrared sensor includes an imaging area including infrared detection pixels; row selection lines; a signal line; a row selection circuit generating a column voltage in the signal line; a column amplifier including a first amplifying transistor which generates an amplification voltage obtained by amplifying the column voltage and a first clamp circuit which holds threshold voltage information of the first amplifying transistor in its gate; a removing circuit including a second amplifying transistor and a second clamp circuit which holds threshold voltage information of the second amplifying transistor in its gate, the removing circuit being connected to the column amplifier to remove a bias component from the amplification voltage; and a reading circuit reading an output voltage from the column amplifier, the output voltage is obtained by excluding at least the bias component from the amplification voltage.

Abstract: This disclosure concerns a solid-state imaging device comprising plurality of first pixels each including a colorless filter to convert the visible light into a first electric signal; plurality of second pixels each including a first filter having a peak of a spectral transmission at a first wavelength of the visible light to convert the visible light at the first wavelength into a second electric signal; plurality of third pixels each including a second filter having a peak of a spectral transmission at a second wavelength other than the first wavelength of the visible light to convert the visible light at the second wavelength into a third electric signal; and an arithmetic part receiving the first to the third electric signals and calculating a fourth electric signal corresponding to a third wavelength other than the first wavelength and the second wavelength by using the first to the third electric signals.

Abstract: The present invention provides a solid-state image sensing device that converts long-wavelength light represented by the terahertz band into electric signals without being affected by the fluctuation of radiated heat, and outputs the signals mainly as picture signals; a method for manufacturing the same, and an imaging system. The cell unit has an antenna to generate electrical signals by receiving incident electric waves, an electrical resistor electrically connected to the antenna, and to vary the temperature of the cell unit by generating Joule heat corresponding to the electrical signals, and a thermoelectric conversion element electrically connected to the support structure portion, electrically insulated from the antenna and the electrical resistor, and thermally connected to the electrical resistor, to generate electrical signals by detecting the temperature variation of the cell unit; and the side of the incident electric waves in the cell unit is formed of a material to reflect infrared lights.

Abstract: In an acoustoelectric converter element, a light wave from a light source is introduced into a first optical waveguide of a vibration substrate, and diffracted by a diffraction grating disposed on the first optical waveguide. The diffracted light is directed to and detected by a photo detector. Here, the vibration substrate is so supported as to vibrate with respect to an acoustic wave. Therefore, the diffracted light detected by the photo detector is modulated by the acoustic wave, and a signal is output from the detector in accordance with the acoustic wave.

Abstract: An infrared sensor includes an imaging area including infrared detection pixels; row selection lines; a signal line; a row selection circuit generating a column voltage in the signal line; a column amplifier including a first amplifying transistor which generates an amplification voltage obtained by amplifying the column voltage and a first clamp circuit which holds threshold voltage information of the first amplifying transistor in its gate; a removing circuit including a second amplifying transistor and a second clamp circuit which holds threshold voltage information of the second amplifying transistor in its gate, the removing circuit being connected to the column amplifier to remove a bias component from the amplification voltage; and a reading circuit reading an output voltage from the column amplifier, the output voltage is obtained by excluding at least the bias component from the amplification voltage.

Abstract: An opto-acoustoelectric device encompasses a diaphragm having a diffraction grating, the diaphragm is susceptible to a vibration driven by an external force; a light source oriented to irradiate the diffraction grating; and a photo detector configured to detect the light diffracted by the diffraction grating and to convert the detected light into an electric signal. The electric signal corresponds to a displacement of the vibration in the diaphragm.

Abstract: An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.

Abstract: An opto-acoustoelectric device encompasses a diaphragm having a diffraction grating, the diaphragm is susceptible to a vibration driven by an external force; a light source oriented to irradiate the diffraction grating; and a photo detector configured to detect the light diffracted by the diffraction grating and to convert the detected light into an electric signal. The electric signal corresponds to a displacement of the vibration in the diaphragm.

Abstract: An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.

Abstract: An infrared image sensor comprises, a substrate having an image area on which infrared radiation is made incident and an non-image area out of the image area, plural first heat-sensitive parts arranged in rows and columns on the image area, plural second heat-sensitive parts provided in the non-image area so as to correspond to the respective rows of the first heat-sensitive parts in the image area with the same thermoelectric conversion function as that of the first heat-sensitive parts, a bias current supply circuit supplying a bias current to the first heat-sensitive parts and second heat-sensitive parts, an output circuit outputting an electric signal of the first heat-sensitive parts, and a bias current control circuit controlling the bias current to be fed to the first heat-sensitive parts, according to an electric signal of the second heat-sensitive parts.

Abstract: An infrared sensor includes an imaging area including a thermal non-sensitivity pixel row, an optical non-sensitivity pixel row and a valid pixel row, and the infrared sensor including a column amplifier including a first amplifying transistor, a first clamp circuit, an integration capacitor, and a resetting part connected to the drain of the first amplifying transistor and a storage node of the integration capacitor, the column amplifier being connected to the signal lines, and amplifying a signal voltage generated in the signal line; a column buffer including a driving transistor, a drain of the driving transistor being connected to a source of the first amplifying transistor; a readout circuit connected to the storage node of the integration capacitor; and a signal generating circuit including a circuit configuration equivalent to that of the column amplifier and including a second amplifying transistor equivalent to the first amplifying transistor, a gate of the second amplifying transistor connected to a

Abstract: A solid-state infrared imager comprises a matrix array of infrared sensing pixels which are formed as an imaging area on a semiconductor substrate and each of which contains a pn-junction thermoelectric converter element to sense incident infrared radiation, row selection lines each connected to the pixels of a corresponding row, signal lines each connected to the pixels of a corresponding column, a row selection circuit which selects and drives one of the row selection lines, and a signal readout circuit which reads out signal currents output to the signal lines from the pixels corresponding to the row selection line driven by the row selection circuit. Particularly, the signal readout circuit includes a signal line potential stabilizer which stabilizes the potential of the signal line to a constant level, and a current-voltage converter which converts the signal current flowing in a signal line to a signal voltage.

Abstract: A method for manufacturing an infrared sensor, including preparing a substrate including a supporting member made of single crystalline silicon, a first layer made of silicon oxide formed on the supporting member, and a second layer made of single crystalline silicon formed on the first layer, embedding a silicon oxide layer over the second layer, forming an infrared detection pixel in the second layer, the infrared detection pixel having a function of converting heat into an electric signal, fanning a supporting beam line including a U-shaped electric conductor on the silicon oxide layer, while forming a gate electrode of a MOS transistor of a peripheral circuit on the second layer, the gate electrode having an electric conductor with U-shaped cross section, forming an infrared absorption layer on the second layer, the infrared absorption layer having a function of converting an infrared ray into heat, and etching the second layer to form a hole for isolating the infrared detection pixel from of the substrat

Abstract: An infrared image sensor encompasses (a) a base body, (b) a plurality of signal lines disposed on the base body, (c) a plurality of address lines intersecting the signal lines, (d) a plurality of detector portions provided in the cross region of the signal lines and the address lines, each of the detector portions being connected between the corresponding signal line and the address line, each of the detector portions is configured to detect infrared-ray, (e) a plurality of supporting beams supporting each of the detector portions above the base body, and (f) a plurality of contactors configured to contact each of the detector portions with the base body thermally so as to transport thermal energy to be accumulated in each of the detector portions toward the base body.

Abstract: An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.

Abstract: An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.