Abstract: There is provided an electrode sheet for organic device capable of, only by cutting, providing desired organic device elements with a high degree of freedom in shape without causing damage, which has both the functions of a supporting base material and an organic semiconductor and also has a superior humidity resistance, oxygen impermeability, flexibility, low resistivity and mass productivity. The electrode sheet for organic device comprises a metal foil; and a plurality of organic semiconductor layers provided apart from each other on said metal foil.

Abstract: There are provided an electrode foil which has both the functions of a supporting base material and a reflective electrode and also has a superior thermal conductivity and heat resistance; and an organic device using the same. The electrode foil comprises a metal foil; a diffusion prevention layer for preventing diffusion of metal derived from the metal foil, the diffusion prevention layer being provided directly on the metal foil; and a reflective layer provided directly on the diffusion prevention layer.

Abstract: There are provided an electrode foil which has both the functions of a supporting base material and a reflective electrode and also has a superior thermal conductivity; and an organic device using the same. The electrode foil comprises a metal foil and a reflective layer provided directly on the metal foil.

Abstract: There are provided an electrode foil which has all the functions of a supporting base material, an electrode and a reflective layer and also has a superior thermal conductivity; and an organic device using the same. The electrode foil comprises a metal foil, wherein the electrode foil has at least one outermost surface which is an ultra-smooth surface having an arithmetic average roughness Ra of 10.0 nm or less as measured in accordance with JIS B 0601-2001.

Abstract: There are provided an electrode foil which has both the functions of a supporting base material and a reflective electrode and also has a superior thermal conductivity and heat resistance; and an organic device using the same. The electrode foil comprises a metal foil; a diffusion prevention layer for preventing diffusion of metal derived from the metal foil, the diffusion prevention layer being provided directly on the metal foil; and a reflective layer provided directly on the diffusion prevention layer.

Abstract: The present invention relates to an anode structure for use in a top-emission type organic EL device which comprises a laminated structure comprising an anode layer made of at least one selected from the group consisting of aluminum, aluminum alloys, silver and silver alloys; and a buffer layer directly provided on the anode layer and made of an electrically conductive amorphous carbon having a hydrogen concentration of 15 at. % or less. According to the present invention, there is provided an anode structure which is superior in alkali resistance and can lengthen lifetime of an organic EL device as well as can ensure a high work function suitable for an anode for a high-luminance, high-power-efficient organic EL device.

Abstract: The present invention relates to an anode structure for use in a top-emission type organic EL device which comprises a laminated structure comprising an anode layer made of at least one selected from the group consisting of aluminum, aluminum alloys, silver and silver alloys; and a buffer layer directly provided on the anode layer and made of an electrically conductive amorphous carbon having a hydrogen concentration of 15 at. % or less. According to the present invention, there is provided an anode structure which is superior in alkali resistance and can lengthen lifetime of an organic EL device as well as can ensure a high work function suitable for an anode for a high-luminance, high-power-efficient organic EL device.

Abstract: With respect to a reflection-type display device, an Al-based alloy material for a reflective film, which has excellent reflective characteristics and can be directly bonded to a transparent electrode layer such as ITO and IZO is provided. The present invention is Al—Ni—B alloy material for a reflective film, comprising aluminum containing nickel and boron, wherein a nickel content is 1.5-4 at %, a boron content is 0.1-0.5 at %, and the balance is aluminum. It is more preferable if the nickel content is 1.5-3 at %, and the boron content is 0.1-0.4 at %.

Abstract: To provide an Al—Ni alloy wiring electrode material, which has flexibility suitable for organic EL, can be directly bonded to a transparent electrode layer of ITO or the like, and is excellent in corrosion resistance against developers. An Al—Ni alloy wiring electrode material containing aluminum, nickel and boron, wherein the material contains a total of 0.35 at % to 1.2 at % of nickel and boron with the balance being aluminum. It is also preferred that the Al—Ni alloy wiring electrode material contain 0.3 at % to 0.7 at % of nickel and 0.05 at % to 0.5 at % of boron.

Abstract: A time zone start time point calculating unit calculates a time zone to be set in a VOBU in accordance with audio bit rate. A time zone comparing unit compares a time point at which an audio pack is to be multiplexed with the time zone calculated by the time zone start time point calculating unit. A flag setting unit sets whether the audio pack is to be completed or not in accordance with the result of comparison by the time zone comparing unit. Therefore, a completing process takes place before a VOBU boundary, and a completed PCK will not be generated immediately after the VOBU boundary. Thus, generation of a buffer overflow can be prevented.

Abstract: An Aluminum-Nickel alloy wiring material includes Aluminum, Nickel, Cerium, and Boron. A thin film transistor includes the Aluminum-Nickel alloy wiring material. A sputtering target comprises Aluminum, Nickel, Cerium and Boron. A method of manufacturing a thin film transistor substrate comprises disposing a thin film transistor on a substrate, wherein the thin film transistor includes a wiring circuit layer comprising Aluminum, Nickel, Cerium, and Boron. The Nickel, Cerium and Boron satisfy the following inequalities; 0.5?X?5.0, 0.01?Y?1.0, and 0.01?Z?1.0, respectively, wherein X represents an atomic percentage of Nickel content, Y represents an atomic percentage of Cerium content, and Z represents an atomic percentage of Boron content.

Abstract: With respect to a reflection-type display device, an Al-based alloy material for a reflective film, which has excellent reflective characteristics and can be directly bonded to a transparent electrode layer such as ITO and IZO is provided. The present invention is Al—Ni—B alloy material for a reflective film, comprising aluminum containing nickel and boron, wherein a nickel content is 1.5-4 at %, a boron content is 0.1-0.5 at %, and the balance is aluminum. It is more preferable if the nickel content is 1.5-3 at %, and the boron content is 0.1-0.4 at %.

Abstract: The provided is a technology for forming a circuit for wiring, which can show a lower resistance, and particularly proposes a laminated film for wiring, which can surely decrease wiring resistance even in a large-sized liquid crystal display. The laminated film for wiring according to the present invention is characterized in that the laminated film for wiring comprises a metal layer with low resistance and an Al—Ni-based alloy layer containing 0.5 at % to 10.0 at % Ni laminated thereon. The metal layer with low resistance contains at least one or more elements among Au, Ag, Cu and Al, and has a specific resistance of 3 ??·cm or less.

Abstract: The present invention provides Al-based wiring material that allows, in a display device including thin film transistors and transparent electrode layers, direct bonding to the transparent electrode layer made of ITO, IZO or the like as well as direct bonding to the semiconductor layer, such as n+-Si. The Al—Ni—B alloy wiring material according to the present invention is configured such that the nickel content X at %, the nickel atomic percent, and the boron content Y at %, the boron atomic percent, satisfy the following equations: 0.5?X?10.0, 0.05?Y?11.0, Y+0.25X?1.0 and Y+1.15X?11.5, and the remainder is aluminum.

Abstract: A time zone start time point calculating unit calculates a time zone to be set in a VOBU in accordance with audio bit rate. A time zone comparing unit compares a time point at which an audio pack is to be multiplexed with the time zone calculated by the time zone start time point calculating unit. A flag setting unit sets whether the audio pack is to be completed or not in accordance with the result of comparison by the time zone comparing unit. Therefore, a completing process takes place before a VOBU boundary, and a completed PCK will not be generated immediately after the VOBU boundary. Thus, generation of a buffer overflow can be prevented.

Abstract: A time zone start time point calculating unit calculates a time zone to be set in a VOBU in accordance with audio bit rate. A time zone comparing unit compares a time point at which an audio pack is to be multiplexed with the time zone calculated by the time zone start time point calculating unit. A flag setting unit sets whether the audio pack is to be completed or not in accordance with the result of comparison by the time zone comparing unit. Therefore, a completing process takes place before a VOBU boundary, and a completed PCK will not be generated immediately after the VOBU boundary. Thus, generation of a buffer overflow can be prevented.

Abstract: There is disclosed a method of producing a lever including a pair of side plates, an interconnecting portion interconnecting one ends of the two side plates, a lock arm formed at the interconnecting portion so as to be engaged with a male connector, excessive displacement prevention piece portions formed on and projecting respectively from opposite side portions of the lock arm, and a pair of displacement limitation ribs which are formed respectively at opposite ends of the interconnecting portion, and project in a direction away from the side plates, and are disposed outwardly respectively of the excessive displacement prevention piece portions, each excessive displacement prevention piece portion is disposed between the corresponding displacement limitation rib and the interconnecting portion, and thereafter the bent interconnecting portion is restored into its initial shape, thereby canceling the expansion of the gap between the displacement limitation ribs.

Abstract: To provide a lever-type connector in which a sufficient strength and durability of a lever are secured so that a fitting operation can be effected positively, and also a thin design of the lever is achieved, a lever-type connector 10 includes a female housing, a lever 20 pivotally mounted on the female housing, and a male housing for fitting to the female housing, and the female and male housings are completely fitted to each other by pivotally moving the lever 20 engaged with the male housing.

Abstract: The present invention proposes the technique in which aluminum based alloy is used as a wiring material, and the number of process is sharply reduced in the technique of forming the aluminum based alloy wiring circuit, thereby making it possible to efficiently manufacture the element. The present invention is a method of forming the wiring circuit by the aluminum based alloy, wherein the development process of a resist layer and the etching process of an aluminum based alloy film are simultaneously performed with a developing solution for the aluminum based alloy film laminated with the resist layer. This aluminum based alloy is preferably 5 ?/sec to 40 ?/sec in etching rate by the developing solution.

Abstract: There is disclosed a method of producing a lever including a pair of side plates, an interconnecting portion interconnecting one ends of the two side plates, a lock arm formed at the interconnecting portion so as to be engaged with a male connector, excessive displacement prevention piece portions formed on and projecting respectively from opposite side portions of the lock arm, and a pair of displacement limitation ribs which are formed respectively at opposite ends of the interconnecting portion, and project in a direction away from the side plates, and are disposed outwardly respectively of the excessive displacement prevention piece portions.