Abstract: A semiconductor device includes a semiconductor chip having a plurality of electrodes formed on a first major surface thereof, a resin package sealing the semiconductor chip therein, of leads electrically connected to the electrodes of the semiconductor chip and formed so as to extend inside and outside the resin package, and a support lead supporting the semiconductor chip at a part of a second major surface of the semiconductor chip opposite the first major surface. The semiconductor chip is bonded to the support lead with an adhesive tape.

Abstract: A process is provided for the fabrication of a plastic molded type semiconductor device in which a die pad is formed to have a smaller area than a semiconductor chip to be mounted on a principal surface of the die pad and the semiconductor chip and die pad are sealed with a plastic mold.

Abstract: The invention provides means for effectively preventing a wire disconnection generated due to an increase of calorie applied to a semiconductor integrated circuit device. The semiconductor integrated circuit device is structured such that a metal layer containing a Pd layer is provided in a portion to which a connecting member having a conductivity is connected, and an alloy layer having a melting point higher than that of an Sn—Pb eutectic solder and containing no Pb as a main composing metal is provided outside a portion molded by a resin. Further, a metal layer in which a thickness in a portion to which the connecting member having the conductivity is adhered is equal to or more than 10 &mgr;m is provided in the connecting member.

Abstract: The invention provides means for effectively preventing a wire disconnection generated due to an increase of calorie applied to a semiconductor integrated circuit device. The semiconductor integrated circuit device is structured such that a metal layer containing a Pd layer is provided in a portion to which a connecting member having a conductivity is connected, and an alloy layer having a melting point higher than that of an Sn—Pb eutectic solder and containing no Pb as a main composing metal is provided outside a portion molded by a resin. Further, a metal layer in which a thickness in a portion to which the connecting member having the conductivity is adhered is equal to or more than 10 &mgr;m is provided in the connecting member.

Abstract: A process is provided for the fabrication of a plastic molded type semiconductor device in which a die pad is formed to have a smaller area than a semiconductor chip to be mounted on a principal surface of the die pad and the semiconductor chip and die pad are sealed with a plastic mold.

Abstract: A semiconductor device comprising: a tape substrate which supports a semiconductor chip, said chip having surface electrodes, said tape substrate being provided with a plurality of leads corresponding to the surface electrodes of the semiconductor chip and bonded thereto, and with dummy leads formed in vacant regions in corner portions of the tape substrate where the leads are not formed; conductive members for bonding the surface electrodes of the semiconductor chip to the leads of the tape substrate; and a plurality of external terminals arranged on an outside periphery of the semiconductor chip and mounted on the tape substrate.

Abstract: A semiconductor device comprising: a tape substrate which supports a semiconductor chip, said chip having surface electrodes, said tape substrate being provided with a plurality of leads corresponding to the surface electrodes of the semiconductor chip and bonded thereto, and with dummy leads formed in vacant regions in corner portions of the tape substrate where the leads are not formed; conductive members for bonding the surface electrodes of the semiconductor chip to the leads of the tape substrate; and a plurality of external terminals arranged on an outside periphery of the semiconductor chip and mounted on the tape substrate.

Abstract: In order to improve the package body cracking resistance of an LSI package at the reflow soldering and to provide both a leadframe suitable for fabricating the LSI package according to the flexible manufacturing system and an LSI using the leadframe, the adhered area between a semiconductor chip 2 and a resin is enlarged by making the external size of a die pad 3 smaller than that of the semiconductor chip to be mounted thereon. Moreover, a variety of semiconductor chips 2 having different external sizes can be mounted on the die pad 3 by cutting the leading ends of leads 5 to a suitable length in accordance with the external sizes of the semiconductor chips 2.

Abstract: In order to improve the package body cracking resistance of an LSI package at the reflow soldering and to provide both a leadframe suitable for fabricating the LSI package according to the flexible manufacturing system and an LSI using the leadframe, the adhered area between a semiconductor chip 2 and a resin is enlarged by making the external size of a die pad 3 smaller than that of the semiconductor chip to be mounted thereon. Moreover, a variety of semiconductor chips 2 having different external sizes can be mounted on the die pad 3 by cutting the leading ends of leads 5 to a suitable length in accordance with the external sizes of the semiconductor chips 2.