Abstract: A charged particle beam device is provided that performs proper beam adjustment while suppressing a decrease in MAM time, with a simple configuration without adding a lens, a sensor, or the like. The charged particle beam device includes: an optical element which adjusts a charged particle beam emitted from a charged particle source; an adjustment element which adjusts an incidence condition of the charged particle beam with respect to the optical element; and a control device which controls the adjustment element, wherein the control device determines a difference between a first feature amount indicating a state of the optical element based on the condition setting of the optical element, and a second feature amount indicating a state where the optical element reaches based on the condition setting and executes adjustment by the adjustment element when the difference is greater than or equal to a predetermined value.

Abstract: Provided is a charged particle beam apparatus, aiming at obtaining an image and the like focused on the sample surface and the bottom while preventing the visual field deviation occurred when focusing on the sample surface and the bottom respectively. The charged particle beam apparatus forms a first image (301), which is based on detection of the first energy charged particles, based on an irradiation with a beam whose focus is adjusted on a sample surface side, forms a second image (304) which is based on detection of second energy charged particles having a relatively higher energy than the first energy and a third image (303) which is based on the detection of the first energy charged particles, based on the irradiation with a beam whose focus is adjusted on a bottom side of a pattern included in the sample, acquires a deviation between the first image and the third image, and composes the first image and the second image so as to correct the deviation.

Abstract: The objective of the present invention is to provide a charged particle beam device wherein scanning is performed through a scanning pattern that may suppress the influence from charge accumulation without having to perform blanking. In order to achieve this objective, a charged particle beam device is proposed wherein a first scan line is scanned by deflecting a charged particle beam in a first direction. The charged particle beam is deflected in a manner where the ending point of the first scan line is connected to the scan starting point of a second scan line which is arranged to be parallel to the first scan line so as to draw a scanning trajectory, thereby modifying the scan line position. The second scan line is scanned by scanning the charged particle beam from the scan starting point of the second scan line toward a second direction that is opposite to the first direction.

Abstract: Provided is a measurement device including: an irradiation optical system which emits a primary charged quantum beam to a sample for scanning; a detector which detects secondary charged particles generated from the sample; and a signal processing unit which processes an output signal from the secondary charged particle detector which has detected the secondary charged particles, in which the signal processing unit includes a measurement unit which measures widths of a first pattern group calibrated with a well-known first dimension and a second pattern group calibrated with a well-known second dimension, and an operation unit which defines a relationship between the well-known dimensions of the first and second pattern groups and length measurement values of the first and second pattern groups as a function.

Abstract: A charged particle beam device is provided that performs proper beam adjustment while suppressing a decrease in MAM time, with a simple configuration without adding a lens, a sensor, or the like. The charged particle beam device includes: an optical element which adjusts a charged particle beam emitted from a charged particle source; an adjustment element which adjusts an incidence condition of the charged particle beam with respect to the optical element; and a control device which controls the adjustment element, wherein the control device determines a difference between a first feature amount indicating a state of the optical element based on the condition setting of the optical element, and a second feature amount indicating a state where the optical element reaches based on the condition setting and executes adjustment by the adjustment element when the difference is greater than or equal to a predetermined value.

Abstract: Provided is a charged particle beam apparatus, aiming at obtaining an image and the like focused on the sample surface and the bottom while preventing the visual field deviation occurred when focusing on the sample surface and the bottom respectively. The charged particle beam apparatus forms a first image (301), which is based on detection of the first energy charged particles, based on an irradiation with a beam whose focus is adjusted on a sample surface side, forms a second image (304) which is based on detection of second energy charged particles having a relatively higher energy than the first energy and a third image (303) which is based on the detection of the first energy charged particles, based on the irradiation with a beam whose focus is adjusted on a bottom side of a pattern included in the sample, acquires a deviation between the first image and the third image, and composes the first image and the second image so as to correct the deviation.

Abstract: A charged particle beam device is provided that performs proper beam adjustment while suppressing a decrease in MAM time, with a simple configuration without adding a lens, a sensor, or the like. The charged particle beam device includes: an optical element which adjusts a charged particle beam emitted from a charged particle source; an adjustment element which adjusts an incidence condition of the charged particle beam with respect to the optical element; and a control device which controls the adjustment element, wherein the control device determines a difference between a first feature amount indicating a state of the optical element based on the condition setting of the optical element, and a second feature amount indicating a state where the optical element reaches based on the condition setting and executes adjustment by the adjustment element when the difference is greater than or equal to a predetermined value.

Abstract: A charged particle beam device includes a charged particle source that generates a charged particle beam, a focus adjustment unit that adjusts a focal position of the charged particle beam, a deflection unit for scanning the charged particle beam on the sample, a detection unit that detects charged particles generated when the sample is irradiated with the charged particle beam, a detected charged particle selection unit that selects charged particles to be detected by the detection unit, and a control processing unit that makes focus adjustment of the focus adjustment unit and reference adjustment of the detected charged particle selection unit by using information from the detection unit acquired from one scan.

Abstract: A scanning electron microscope capable of properly determining a step of a step pattern formed on a sample regardless of combination of material of a groove of the step pattern and material of a projection of the step pattern, the scanning electron microscope includes a beam source, a detection unit having a first detection unit that detects a secondary electron emitted from the sample at an angle between an optical axis direction of the primary electron beam which is equal to or less than a predetermined value, and a second detection unit that detects a secondary electron emitted from the sample at an angle between the optical axis direction of the primary electron beam which is greater than the predetermined value, and a processing unit to obtain information on the step pattern using the information on a ratio between signals outputted from the first and the second detection unit.

Abstract: The objective of the present invention is to provide a height measurement device capable of highly accurate measurement in the depth direction of a structure on a sample. To achieve this objective, proposed are a charged particle beam device and a height measurement device that is provided with a calculation device for determining the size of a structure on a sample on the basis of a detection signal obtained by irradiating the sample with a charged particle beam, wherein the calculation device calculates the distance from a first charged particle beam irradiation mark formed at a first height on the sample and a second charged particle beam irradiation mark formed at a second height on the sample and on the basis of this distance and the charged particle beam irradiation angle when the first charged particle beam irradiation mark and second charged particle beam irradiation mark were formed, calculates the distance between the first height and the second height.

Abstract: A charged particle beam device includes a charged particle source that generates a charged particle beam, a focus adjustment unit that adjusts a focal position of the charged particle beam, a deflection unit for scanning the charged particle beam on the sample, a detection unit that detects charged particles generated when the sample is irradiated with the charged particle beam, a detected charged particle selection unit that selects charged particles to be detected by the detection unit, and a control processing unit that makes focus adjustment of the focus adjustment unit and reference adjustment of the detected charged particle selection unit by using information from the detection unit acquired from one scan.

Abstract: The objective of the present invention is to provide a charged particle beam device wherein scanning is performed through a scanning pattern that may suppress the influence from charge accumulation without having to perform blanking. In order to achieve this objective, a charged particle beam device is proposed wherein a first scan line is scanned by deflecting a charged particle beam in a first direction. The charged particle beam is deflected in a manner where the ending point of the first scan line is connected to the scan starting point of a second scan line which is arranged to be parallel to the first scan line so as to draw a scanning trajectory, thereby modifying the scan line position. The second scan line is scanned by scanning the charged particle beam from the scan starting point of the second scan line toward a second direction that is opposite to the first direction.

Abstract: A charged particle beam device is provided that performs proper beam adjustment while suppressing a decrease in MAM time, with a simple configuration without adding a lens, a sensor, or the like. The charged particle beam device includes: an optical element which adjusts a charged particle beam emitted from a charged particle source; an adjustment element which adjusts an incidence condition of the charged particle beam with respect to the optical element; and a control device which controls the adjustment element, wherein the control device determines a difference between a first feature amount indicating a state of the optical element based on the condition setting of the optical element, and a second feature amount indicating a state where the optical element reaches based on the condition setting and executes adjustment by the adjustment element when the difference is greater than or equal to a predetermined value.

Abstract: The invention has an object to provide a charged particle beam device in which it is possible to perform proper beam adjustment while suppressing a decrease in MAM time, with a simple configuration without adding a lens, a sensor, or the like.

Abstract: The objective of the present invention is to provide a height measurement device capable of highly accurate measurement in the depth direction of a structure on a sample. To achieve this objective, proposed are a charged particle beam device and a height measurement device that is provided with a calculation device for determining the size of a structure on a sample on the basis of a detection signal obtained by irradiating the sample with a charged particle beam, wherein the calculation device calculates the distance from a first charged particle beam irradiation mark formed at a first height on the sample and a second charged particle beam irradiation mark formed at a second height on the sample and on the basis of this distance and the charged particle beam irradiation angle when the first charged particle beam irradiation mark and second charged particle beam irradiation mark were formed, calculates the distance between the first height and the second height.

Abstract: A scanning electron microscope capable of properly determining a step of a step pattern formed on a sample regardless of combination of material of a groove of the step pattern and material of a projection of the step pattern, the scanning electron microscope includes a beam source, a detection unit having a first detection unit that detects a secondary electron emitted from the sample at an angle between an optical axis direction of the primary electron beam which is equal to or less than a predetermined value, and a second detection unit that detects a secondary electron emitted from the sample at an angle between the optical axis direction of the primary electron beam which is greater than the predetermined value, and a processing unit to obtain information on the step pattern using the information on a ratio between signals outputted from the first and the second detection unit.

Abstract: The invention has an object to provide a charged particle beam device in which it is possible to perform proper beam adjustment while suppressing a decrease in MAM time, with a simple configuration without adding a lens, a sensor, or the like.

Abstract: Provided is a measurement device including: an irradiation optical system which emits a primary charged quantum beam to a sample for scanning; a detector which detects secondary charged particles generated from the sample; and a signal processing unit which processes an output signal from the secondary charged particle detector which has detected the secondary charged particles, in which the signal processing unit includes a measurement unit which measures widths of a first pattern group calibrated with a well-known first dimension and a second pattern group calibrated with a well-known second dimension, and an operation unit which defines a relationship between the well-known dimensions of the first and second pattern groups and length measurement values of the first and second pattern groups as a function.

Abstract: There is provided a technique to correctly select and measure a pattern to be measured even when contours of the pattern are close to each other in a sample including a plurality of patterns on a substantially same plane. A pattern measuring apparatus that scans a sample with charged particles, forms a detected image by detecting secondary charged particles or backscattered charged particles generated from the sample, and measures a pattern imaged on the detected image includes: an image acquiring section acquiring a plurality of detected images taken at a substantially same location on the sample under different imaging conditions; a contour extracting section extracting a plurality of pattern contours from the plurality of detected images; a contour reconstructing section reconstructing a contour to be measured by combining the plurality of pattern contours; and a contour measuring section making a measurement using the reconstructed contour to be measured.

Abstract: An object of the invention is to provide a scanning electron microscope which forms an electric field to lift up, highly efficiently, electrons discharged from a hole bottom or the like even if a sample surface is an electrically conductive material. To achieve the above object, according to the invention, a scanning electron microscope including a deflector which deflects a scanning position of an electron beam, and a sample stage for loading a sample thereon, is proposed. The scanning electron microscope includes a control device which controls the deflector or the sample stage in such a way that before scanning a beam on a measurement target pattern, a lower layer pattern situated in a lower layer of the measurement target pattern undergoes beam irradiation on another pattern situated in the lower layer.