Abstract: The present invention provides a method for calibrating an encoder which includes a scale and a light receiving unit configured to receive light reflected by the scale, and detects a change in relative position between the scale and the light receiving unit, the method comprising a measurement step of measuring a deformation amount of a surface shape of the scale, a specifying step of specifying, based on a measurement result in the measurement step, a range which includes a portion of a surface of the scale, where the deformation amount exceeds a threshold, and within which a detection value of the encoder is corrected, and a determination step of determining a correction value for correcting the detection value of the encoder within the range specified in the specifying step.

Abstract: A lithography apparatus includes a measuring station that includes a first measuring device configured to measure a height of a substrate holder, and a second measuring device configured to measure a height of a surface of a substrate held by the holder, and a patterning station that includes a third measuring device configured to measure a height of the holder, and patterns the substrate held by the holder based on an output of the second measuring device. The patterning station includes a fourth measuring device configured to measure a height of a surface of a substrate held by the holder. The lithography apparatus includes a controller configured to obtain a correction value for an output obtained from at least one of the first and third measuring devices based on outputs of the second and fourth measuring devices with respect to a substrate held by the holder.

Abstract: A lithography apparatus includes a measuring station that includes a first measuring device configured to measure a height of a substrate holder, and a second measuring device configured to measure a height of a surface of a substrate held by the holder, and a patterning station that includes a third measuring device configured to measure a height of the holder, and patterns the substrate held by the holder based on an output of the second measuring device. The patterning station includes a fourth measuring device configured to measure a height of a surface of a substrate held by the holder. The lithography apparatus includes a controller configured to obtain a correction value for an output obtained from at least one of the first and third measuring devices based on outputs of the second and fourth measuring devices with respect to a substrate held by the holder.

Abstract: The present invention provides a method for calibrating an encoder which includes a scale and a light receiving unit configured to receive light reflected by the scale, and detects a change in relative position between the scale and the light receiving unit, the method comprising a measurement step of measuring a deformation amount of a surface shape of the scale, a specifying step of specifying, based on a measurement result in the measurement step, a range which includes a portion of a surface of the scale, where the deformation amount exceeds a threshold, and within which a detection value of the encoder is corrected, and a determination step of determining a correction value for correcting the detection value of the encoder within the range specified in the specifying step.

Abstract: A measurement apparatus, which measures a wavefront aberration of an optical system to be measured, comprises: a calculation unit configured to calculate the wavefront aberration based on an interference fringe generated by light which passed through the optical system to be measured; and a determination unit configured to calculate an evaluation value indicating a wavefront state based on the wavefront aberration calculated by the calculation unit, and determine the calculated wavefront aberration as the wavefront aberration of the optical system if the evaluation value falls within an allowable range.

Abstract: The present invention provides an exposure apparatus comprising a projection optical system configured to project a pattern of a reticle onto a substrate, a stage configured to move the substrate; and a sensor unit which is arranged on the stage and configured to receive light having passed through the projection optical system, the sensor unit including an aperture plate which is configured to be used in measuring different optical performances, and on which a plurality of aperture patterns with different shapes or different sizes are formed, and a photoelectric conversion device configured to photoelectrically convert the light beams from the plurality of aperture patterns.

Abstract: An exposure apparatus includes an image sensor, a measurement optical system configured to guide measurement light to obliquely enter the projection optical system, and further, to guide the measurement light returned from the projection optical system to the image sensor, and a control unit configured to calculate surface position information of the substrate based on the output from the image sensor. The control unit calculates the surface position information of the substrate based on an interval between the image, of a mark arranged on the original stage, formed by the measurement light, which has passed through the mark, and the image of the mark formed by the measurement light reflected by the mark.

Abstract: An exposure apparatus includes a projection optical system for projecting an exposure pattern, onto an object to be exposed, and a measuring apparatus for measuring, as an interference fringe, optical performance of the projection optical system, wherein the measuring apparatus includes an optical element having opposing first and second surfaces, wherein the first surface has a first measurement pattern, and the second surface has a second measurement pattern and is closer to the projection optical system than the first measurement pattern, and wherein the measuring apparatus introduces light into the projection optical system via first and second measurement patterns.

Abstract: A measurement apparatus, which measures a wavefront aberration of an optical system to be measured, comprises: a calculation unit configured to calculate the wavefront aberration based on an interference fringe generated by light which passed through the optical system to be measured; and a determination unit configured to calculate an evaluation value indicating a wavefront state based on the wavefront aberration calculated by the calculation unit, and determine the calculated wavefront aberration as the wavefront aberration of the optical system if the evaluation value falls within an allowable range.

Abstract: A projection exposure apparatus 100 projects the pattern of an original 6 onto a substrate 7 via a projection optical system PL. The projection exposure apparatus 100 includes an original stage 5 which holds the original 6, a substrate stage 8 which holds the substrate 7, and a measurement unit. The measurement unit includes a Fizeau interferometer IF including an optical unit 17 and mirror 22. The optical unit 17 includes a Fizeau surface which splits a light beam into a reference light beam and a test light beam. The mirror 22 reflects the test light beam having passed through the projection optical system PL. The optical unit 17 is mounted on the original stage 5. The mirror 22 is mounted on the substrate stage 8.

Abstract: An exposure apparatus, which equipped with a projection optical system that is configured to project a pattern of an original onto a substrate, includes an interferometer configured to measure a wavefront in a first direction and a wavefront in a second direction of light passed through the projection optical system; a focus detecting unit configured to detect focus positions in the first and second directions of the projection optical system; and a calculating unit configured to calculate wavefront aberration of the projection optical system on the basis of the measurement result of the interferometer and the detection result of the focus detecting unit.

Abstract: The present invention provides an exposure apparatus comprising a projection optical system configured to project a pattern of a reticle onto a substrate, a stage configured to move the substrate; and a sensor unit which is arranged on the stage and configured to receive light having passed through the projection optical system, the sensor unit including an aperture plate which is configured to be used in measuring different optical performances, and on which a plurality of aperture patterns with different shapes or different sizes are formed, and a photoelectric conversion device configured to photoelectrically convert the light beams from the plurality of aperture patterns.

Abstract: An exposure apparatus, which equipped with a projection optical system that is configured to project a pattern of an original onto a substrate, includes an interferometer configured to measure a wavefront in a first direction and a wavefront in a second direction of light passed through the projection optical system; a focus detecting unit configured to detect focus positions in the first and second directions of the projection optical system; and a calculating unit configured to calculate wavefront aberration of the projection optical system on the basis of the measurement result of the interferometer and the detection result of the focus detecting unit.

Abstract: Provided is an exposure apparatus including a projection optical system for projecting an exposure pattern onto an object to be exposed, a measurement device for measuring an optical performance of the projection optical system by guiding light to the projection optical system through a measurement pattern to detect interference fringes formed by the light emitted from the projection optical system, and an adjustment portion for adjusting a numerical aperture of the light that illuminates the measurement pattern, in which the adjustment portion adjusts the numerical aperture so that the visibility of the interference fringes V, which is defined as V=(Imax?Imin)/(Imax+Imin), is equal to or more than 0.3, where Imax represents the maximum amount of light of the interference fringes, and Imin represents the minimum amount of light of the interference fringes, when the measurement device measures an optical performance of the projection optical system.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern on a reticle onto an object to be exposed, a reference mark that serves as a reference for an alignment between the reticle and the object, a first fluid that has a refractive index of 1 or greater, and fills a space between at least part of the projection optical system and the object and a space between at least part of the projection optical system and the reference mark, and an alignment mechanism for aligning the object by using the projection optical system and the first fluid.

Abstract: An exposure apparatus includes a projection optical system for projecting an exposure pattern, onto an object to be exposed, and a measuring apparatus for measuring, as an interference fringe, optical performance of the projection optical system, wherein the measuring apparatus includes an optical element having opposing first and second surfaces, wherein the first surface has a first measurement pattern, and the second surface has a second measurement pattern and is closer to the projection optical system than the first measurement pattern, and wherein the measuring apparatus introduces light into the projection optical system via first and second measurement patterns.

Abstract: A projection exposure apparatus 100 projects the pattern of an original 6 onto a substrate 7 via a projection optical system PL. The projection exposure apparatus 100 includes an original stage 5 which holds the original 6, a substrate stage 8 which holds the substrate 7, and a measurement unit. The measurement unit includes a Fizeau interferometer IF including an optical unit 17 and mirror 22. The optical unit 17 includes a Fizeau surface which splits a light beam into a reference light beam and a test light beam. The mirror 22 reflects the test light beam having passed through the projection optical system PL. The optical unit 17 is mounted on the original stage 5. The mirror 22 is mounted on the substrate stage 8.

Abstract: An exposure apparatus is disclosed. The apparatus comprises an image sensor, a measurement optical system configured to guide measurement light to obliquely enter the projection optical system, and further guide the measurement light returned from the projection optical system to the image sensor, and a control unit configured to calculate surface position information of the substrate based on the output from the image sensor. The control unit calculates the surface position information of the substrate based on an interval between the image, of a mark arranged on the original stage, formed by the measurement light which has passed through the mark and the image of the mark formed by the measurement light reflected by the mark.

Abstract: An exposure apparatus includes a projection optical system for projecting an exposure pattern, onto an object to be exposed, and a measuring apparatus for measuring, as an interference fringe, optical performance of the projection optical system, wherein the measuring apparatus includes an optical element having opposing first and second surfaces, wherein the first surface has a first measurement pattern, and the second surface has a second measurement pattern and is closer to the projection optical system than the first measurement pattern, and wherein the measuring apparatus introduces light into the projection optical system via first and second measurement patterns.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern on a reticle onto an object to be exposed, a reference mark that serves as a reference for an alignment between the reticle and the object, a first fluid that has a refractive index of 1 or greater, and fills a space between at least part of the projection optical system and the object and a space between at least part of the projection optical system and the reference mark, and an alignment mechanism for aligning the object by using the projection optical system and the first fluid.