Abstract: A termination circuit including: a first circuit provided in a first path that couples a first signal terminal and a first power supply node, the first circuit being configured to enable the first path; a second circuit provided in a second path that couples the first signal terminal and a second power supply node, the second circuit being configured to enable the second path; and a control circuit that is configured to perform a first operation including controlling an operation of the first circuit to enable the first path during a first period that corresponds to a rising edge of a first input signal at the first signal terminal, and controlling an operation of the second circuit to enable the second path during a second period that corresponds to a falling edge of the first input signal.

Abstract: A semiconductor light emitting device includes: a substrate including a substrate front surface; an edge light emitting element mounted on the substrate front surface, the edge light emitting element including a first element end surface facing a first direction intersecting a thickness direction perpendicular to the substrate front surface and a second element end surface facing an opposite direction to the first element end surface, the edge light emitting element configured such that light is emitted from the first element end surface and the second element end surface; a light receiving sub-mount provided over the substrate front surface and including a mounting surface facing the second element end surface; and a light receiving element mounted on the mounting surface and including a light receiving portion provided at a light receiving element front surface and facing the second element end surface.

Abstract: A semiconductor laser device includes a semiconductor substrate, a light emitting unit, a contact layer, an insulating film, and a first electrode. The contact layer has an electrode connection surface facing the Z direction. The insulating film has a pair of contact layer covering parts that cover both end regions of the electrode connection surface in the X direction, and a first opening that exposes a portion of the electrode connection surface. The first electrode is connected to the electrode connection surface exposed from the first opening. The insulation coverage factor, which is the ratio of the width of the pair of contact layer covering parts in the X direction to the width of the electrode connection surface in the X direction, is 10% or less. The thickness of the contact layer in the Z direction is 2 ?m or greater.

Abstract: According to one embodiment, the transparent layer has a plurality of band portions, each of which has a triangular shape with a first edge, second edge and third edge, the first edge is shorter than the second edge and third edge, the second edge is shorter than the edge side, the first edge extends along the first direction, a direction of extension of an imaginary line connecting a first point at a center of the first edge and a second point where the second and third edges intersect is a direction of extension of each of the band portions, the direction of extension is tilted at 4° to the second direction, and a length of the first edge is shorter than an interval between each adjacent pair of the signal lines.

Abstract: A surface emitting laser element includes a substrate and a hexagonal semiconductor structure layer formed on the substrate which emits a light from an upper surface side or a bottom surface side The semiconductor structure layer includes a first clad layer of a first conductivity type, a first guide layer of the first conductivity type having a photonic crystal layer and a first embedding layer, a second embedding layer, an active layer, second guide layer, and a second clad layer of a second conductivity type. The photonic crystal layer has a plurality of voids disposed having two-dimensional periodicity when viewed from above. The first embedding layer is formed on an upper side of the photonic crystal layer and closes openings of the voids. And an oxygen concentration of the second embedding layer is less than an oxygen concentration of the first embedding layer.

Abstract: A method for separating a fluorocarbon, the method including separating a fluorocarbon having n carbon atoms from a mixture including the fluorocarbon having n carbon atoms and a fluorocarbon having n+m or more carbon atoms, where the fluorocarbon having n carbon atoms is separated by bringing the mixture and an adsorbent into contact with each other, n is an integer of 1 or more; and m is an integer of 1 or more.

Abstract: This rubbing determination device determines rubbing of a rotary machine which comprises a fixed part and a rotary part. The present device acquires an AE signal detected by means of an AE sensor provided in the rotary machine and acquires a gap amount between the fixed part and the rotary part. A rubbing determination evaluation index is generated on the basis of the AE signal and the gap amount, and rubbing in the rotary machine is determined on the basis of the rubbing determination evaluation index.

Abstract: A display device includes a first nitride insulating film arranged on a first substrate, a gate electrode arranged along a first direction on the first nitride insulating film, a second nitride insulating film arranged on the gate electrode, a first oxide insulating film arranged on the second nitride insulating film, and an oxide semiconductor layer arranged on the first oxide insulating film, wherein the gate electrode has a first titanium layer, an aluminum layer, and a second titanium layer stacked in order from the first nitride insulating film side, and a thickness of the second titanium layer is greater than a thickness of the first titanium layer.

Abstract: An ion analysis device includes a sampling unit configured to sample condensate of exhaust gas flowing through an exhaust gas line in a fuel cell; and a sensor unit configured to measure an ion concentration of the condensate, in which the sampling unit is configured to sample the condensate of the exhaust gas from a first reservoir that is provided to the exhaust gas line and where the condensate of the exhaust gas is collected, or to sample the exhaust gas from the exhaust gas line and to collect condensate of the sampled exhaust gas in a second reservoir.

Abstract: An unnecessary circuit operation in a clock enabler circuit accompanying toggling of a clock signal is suppressed. A state holding unit performs a holding operation of a state as to whether or not to output an output clock signal according to an internal clock signal. A clock signal output unit controls output of the output clock signal according to the state held in the state holding unit. A control unit supplies, to the state holding unit, the internal clock signal and a value of the state that are necessary for the holding operation in the state holding unit on a basis of a clock signal and a clock enable signal from an outside.

Abstract: A surface emitting laser element formed of a group III nitride semiconductor, comprising: a first clad layer of a first conductivity type; a first guide layer of the first conductivity type having a photonic crystal layer formed on the first clad layer including voids disposed having two-dimensional periodicity in a surface parallel to the layer and a first embedding layer formed on the photonic crystal layer; a second embedding layer formed on the first embedding layer by crystal growth; an active layer formed on the second embedding layer; a second guide layer formed on the active layer; and a second clad layer of a second conductivity type formed on the second guide layer, the second conductivity type being a conductivity type opposite to the first conductivity type. The first embedding layer has a surface including pits disposed at surface positions corresponding to the voids.

Abstract: According to one embodiment, an illumination device emits light toward a display panel and includes a transparent substrate having a first main surface opposed to the display panel, a second main surface on a side opposite to the first main surface, and a first side surface connecting the first main surface with the second main surface, and a light source emitting light toward the first side surface. The first side surface has a first intersection surface intersecting a thickness direction from the first main surface to the second main surface.

Abstract: A display device includes a wiring region including a gate wiring, a source wiring intersecting the gate wiring, and a first insulating layer between the gate wiring and the source wiring and an opening region including a pixel electrode on the first insulating layer and adjacent to the wiring region. The first insulating layer includes a first oxide insulating layer and a first nitride insulating layer, the first oxide insulating layer is disposed over the wiring region and the opening region, the first nitride insulating layer is disposed in the wiring region and includes a first opening overlapping the opening region, and the pixel electrode overlaps the first opening.

Abstract: Gas generator includes decomposition unit and supply unit. Decomposition unit reacts with at least a portion of a supply liquid to generate at least one of hydrogen gas or oxygen gas. Supply unit collects moisture in the atmosphere, and supplies the collected moisture to decomposition unit as supply liquid.

Abstract: A display device including a first substrate, a second substrate, a liquid crystal layer arranged between the first substrate and the second substrate, a first light guide plate adhered and fixed to the first substrate via a first adhesive layer, a second light guide plate adhered and fixed to the second substrate via a second adhesive layer, a light source unit arranged at a position facing a first side surface of the second light guide plate, and a low refractive index layer interposed in a part of a region between the second light guide plate and the second adhesive layer and having a refractive index lower than that of the first light guide plate, in which a thickness of the low refractive index layer is larger than 800 nm is used.

Abstract: A semiconductor laser device includes a light emitting unit including an active layer and an n-type semiconductor layer and a p-type semiconductor layer that sandwich the active layer. The n-type semiconductor layer includes a first n-type cladding layer and a second n-type cladding layer. The p-type semiconductor layer includes a first p-type cladding layer and a second p-type cladding layer. The n-type semiconductor layer has a greater thickness than the p-type semiconductor layer. An n-type thickness ratio, which is a ratio of a thickness of the first n-type cladding layer to a thickness of the second n-type cladding layer, is equal to a p-type thickness ratio, which is a ratio of a thickness of the first p-type cladding layer to a thickness of the second p-type cladding layer. The n-type thickness ratio and the p-type thickness ratio are each greater than 1.25 and less than or equal to 3.75.

Abstract: A light guide unit includes a light guide member and a protection member surrounding the light guide member. The light guide member includes an optical fiber having an outer diameter. The protection member is formed in a network structure by knitting a metal member having a flat cross-sectional shape by bending the metal member in a direction in which the thickness of the metal material is thin, and a gap smaller than the outer diameter is formed along the axial direction.

Abstract: A semiconductor device, including a first MOS device, a second MOS device, a first dielectric layer, a stop layer, and a second dielectric layer, is provided. The first MOS device and the second MOS device are located on a substrate. The first dielectric layer is beside the first MOS device and the second MOS device. The stop layer is disposed on the first dielectric layer. The second dielectric layer covers the stop layer. The thickness of the second dielectric layer above the first MOS device is greater than the thickness of the second dielectric layer above the second MOS device.

Abstract: A display device includes a first substrate, a gate wiring on the first substrate, a first insulating layer on the gate wiring, a source wiring on the first insulating layer and intersecting the gate wiring, a second insulating layer on the source wiring, a pixel electrode on the second insulating layer; and a first buffer layer between the first substrate and the first insulating layer. A refractive index of the first buffer layer is higher than a refractive index of the first substrate, at an interface between the first buffer layer and the first substrate, and the refractive index of the first buffer layer is lower than a refractive index of the first insulating layer, at an interface between the first buffer layer and the first insulating layer.

Abstract: A base station apparatus includes a controller which determines a value of a modulation and channel coding scheme to be applied at a transmission timing of a data packet required to have the decoding error probability not more than a target error rate, and a transmitter which transmits data to a terminal apparatus, wherein the controller acquires a distribution of variations between first communication quality used when the value of the modulation and channel coding scheme is determined and second communication quality at a time of data transmission and determines a correction value of the first communication quality according to the distribution of the variations and the target error rate, and the transmitter transmits the data by using the modulation and channel coding scheme which is determined by communication quality corrected with the correction value.