Abstract: The present technology relates to an information processing device and an information processing method that enable output of information using a more optimal output modal. Provided is an information processing device including a processing unit configured to perform processes of: acquiring apparatus information regarding an output modal for each electronic apparatus; selecting an electronic apparatus having an output modal that outputs information from among a plurality of electronic apparatuses on the basis of the acquired apparatus information; and outputting the information from an output modal of the selected electronic apparatus. The present technology can be applied to, for example, electronic apparatuses such as information apparatuses, video apparatuses, audio apparatuses, or household electrical appliances.

Abstract: An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

Abstract: An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

Abstract: An oscillating element includes a substrate, negative resistance elements which are electrically connected to the substrate, antennas which are electrically connected one-to-one to each negative resistance element and which transmit or receive an electromagnetic wave, a pad electrically connected to a power supply source for supplying power to the antennas, and a conductor which electrically connects the pad and the antennas to each other. The conductor is constituted of a common wiring that is common to the antennas and individual wirings from the common wiring to each antenna. The individual wirings differ from each other with respect to a sectional area, resistivity, and a length in accordance with a position on the substrate of an antenna connected to each wiring to reduce a difference in wiring resistances caused based on a distance between the antenna connected to each wiring and the pad.

Abstract: There is disclosed a semiconductor device including: a substrate; a plurality of first electrodes arranged away from each other with gaps on the substrate; a first intermediate layer arranged on each of the plurality of first electrode; a second intermediate layer, at least a part of which is arranged on each of the gaps of the plurality of first electrodes; a photoelectric conversion layer arranged on the first intermediate layer and the second intermediate layer; and a second electrode arranged on the photoelectric conversion layer. A content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer.

Abstract: A disclosed method of manufacturing a semiconductor device includes singulating a bonded substrate including a first substrate provided with an interconnection structure layer and a first bonding layer and a second substrate provided with a second bonding layer opposed to the first bonding layer into a plurality of semiconductor devices. The bonded substrate includes functional element regions and a scribe region in a plan view. The singulating includes forming a groove in the scribe region, and cutting the bonded substrate in a region outside an inner side surface of the groove. The groove is formed penetrating one of the first substrate and the second substrate, the interconnection structure layer, and the first and second bonding layers. The groove extends from the one of the first substrate and the second substrate to a position deeper than all interconnection layers provided between the first and second substrates.

Abstract: An oscillating element includes a substrate, negative resistance elements which are electrically connected to the substrate, antennas which are electrically connected one-to-one to each negative resistance element and which transmit or receive an electromagnetic wave, a pad electrically connected to a power supply source for supplying power to the antennas, and a conductor which electrically connects the pad and the antennas to each other. The conductor is constituted of a common wiring that is common to the antennas and individual wirings from the common wiring to each antenna. The individual wirings differ from each other with respect to a sectional area, resistivity, and a length in accordance with a position on the substrate of an antenna connected to each wiring to reduce a difference in wiring resistances caused based on a distance between the antenna connected to each wiring and the pad.

Abstract: An element configured to oscillate or detect an electromagnetic wave, the element comprising: a first dielectric portion having cylindrical shape and including a loop antenna on a first end surface thereof; a second dielectric portion connected to a second end surface of the first dielectric portion which is different from the first end surface; and an electrode portion which is disposed between the second dielectric portion and a substrate and is configured to reflect the electromagnetic wave.

Abstract: An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

Abstract: The disclosed light detecting element includes a first electrode, a second electrode, and a photoelectric conversion film arranged between the first electrode and the second electrode. The first electrode includes a first metal layer, a second metal layer arranged between the first metal layer and the photoelectric conversion film, and an oxide layer arranged between the second metal layer and the photoelectric conversion film and formed of an oxide of a metal that the second metal layer contains as a main component. The reflectance at the first electrode with respect to light having a certain wavelength transmitted through the photoelectric conversion film is higher than a reflectance specific to a material forming the second metal layer with respect to light having the certain wavelength.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: There is disclosed a semiconductor device including: a substrate; a plurality of first electrodes arranged away from each other with gaps on the substrate; a first intermediate layer arranged on each of the plurality of first electrode; a second intermediate layer, at least a part of which is arranged on each of the gaps of the plurality of first electrodes; a photoelectric conversion layer arranged on the first intermediate layer and the second intermediate layer; and a second electrode arranged on the photoelectric conversion layer. A content of oxygen on a molar basis in the second intermediate layer is higher than a content of oxygen on a molar basis in the first intermediate layer.

Abstract: A receiver which is configured to detect a terahertz wave incident on a first surface of a substrate, the receiver comprising: an antenna which is provided on the first surface of the substrate and is configured to receive the terahertz wave; and a through electrode which is electrically connected to the antenna and penetrates the substrate from the first surface to a second surface, the second surface being opposite to the first surface, wherein the through electrode is separated from the antenna by a distance that is 0.25 times a resonance wavelength or more.

Abstract: An element configured to oscillate or detect an electromagnetic wave, the element comprising: a first dielectric portion having cylindrical shape and including a loop antenna on a first end surface thereof; a second dielectric portion connected to a second end surface of the first dielectric portion which is different from the first end surface; and an electrode portion which is disposed between the second dielectric portion and a substrate and is configured to reflect the electromagnetic wave.

Abstract: A receiver which is configured to detect a terahertz wave incident on a first surface of a substrate, the receiver comprising: an antenna which is provided on the first surface of the substrate and is configured to receive the terahertz wave; and a through electrode which is electrically connected to the antenna and penetrates the substrate from the first surface to a second surface, the second surface being opposite to the first surface, wherein the through electrode is separated from the antenna by a distance that is 0.25 times a resonance wavelength or more.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Abstract: An oscillation device includes a waveguide structure including a first conductor layer, a second conductor layer, and a semiconductor layer disposed between the first conductor layer and the second conductor layer and having a gain of an electromagnetic wave, an antenna unit configured to radiate the electromagnetic wave, a first connecting portion configured to connect the waveguide structure and the antenna unit, and a second connecting portion configured to connect the waveguide structure and the antenna unit. A first connecting position of the first connecting portion and the waveguide structure and a second connecting position of the second connecting portion and the waveguide structure are different from each other in a resonance direction in which the electromagnetic wave that resonates the waveguide structure resonates.