Patents by Inventor Yoshinori Toumiya

Yoshinori Toumiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190312074
    Abstract: A solid-state imaging device includes: a first lens layer; and a second lens layer, wherein the second lens layer is formed at least at a periphery of each first microlens formed based on the first lens layer, and the second lens layer present at a central portion of each of the first microlenses is thinner than the second lens layer present at the periphery of the first microlens or no second lens layer is present at the central portion of each of the first microlenses.
    Type: Application
    Filed: June 13, 2019
    Publication date: October 10, 2019
    Applicant: Sony Corporation
    Inventors: Yoichi Ootsuka, Tomoyuki Yamashita, Kiyotaka Tabuchi, Yoshinori Toumiya, Akiko Ogino
  • Patent number: 10355038
    Abstract: A solid-state imaging device includes: a first lens layer; and a second lens layer, wherein the second lens layer is formed at least at a periphery of each first microlens formed based on the first lens layer, and the second lens layer present at a central portion of each of the first microlenses is thinner than the second lens layer present at the periphery of the first microlens or no second lens layer is present at the central portion of each of the first microlenses.
    Type: Grant
    Filed: July 19, 2017
    Date of Patent: July 16, 2019
    Assignee: Sony Corporation
    Inventors: Yoichi Ootsuka, Tomoyuki Yamashita, Kiyotaka Tabuchi, Yoshinori Toumiya, Akiko Ogino
  • Publication number: 20170317128
    Abstract: A solid-state imaging device includes: a first lens layer; and a second lens layer, wherein the second lens layer is formed at least at a periphery of each first microlens formed based on the first lens layer, and the second lens layer present at a central portion of each of the first microlenses is thinner than the second lens layer present at the periphery of the first microlens or no second lens layer is present at the central portion of each of the first microlenses.
    Type: Application
    Filed: July 19, 2017
    Publication date: November 2, 2017
    Applicant: Sony Corporation
    Inventors: Yoichi Ootsuka, Tomoyuki Yamashita, Kiyotaka Tabuchi, Yoshinori Toumiya, Akiko Ogino
  • Patent number: 9741757
    Abstract: A solid-state imaging device includes: a first lens layer; and a second lens layer, wherein the second lens layer is formed at least at a periphery of each first microlens formed based on the first lens layer, and the second lens layer present at a central portion of each of the first microlenses is thinner than the second lens layer present at the periphery of the first microlens or no second lens layer is present at the central portion of each of the first microlenses.
    Type: Grant
    Filed: September 22, 2015
    Date of Patent: August 22, 2017
    Assignee: Sony Corporation
    Inventors: Yoichi Ootsuka, Tomoyuki Yamashita, Kiyotaka Tabuchi, Yoshinori Toumiya, Akiko Ogino
  • Patent number: 9263493
    Abstract: Provided is an image pickup element, including: condenser lenses made of a resin containing fine metal particles; photoelectric conversion elements formed in a silicon substrate and each configured to photoelectrically convert incident light that enter from an outside through corresponding one of the condenser lenses; and a protective film made of a silicon compound, the protective film being formed between the condenser lenses and the silicon substrate.
    Type: Grant
    Filed: July 24, 2014
    Date of Patent: February 16, 2016
    Assignee: SONY CORPORATION
    Inventors: Sintaro Nakajiki, Yukihiro Sayama, Yoshinori Toumiya, Tadayuki Dofuku, Toyomi Jinwaki
  • Publication number: 20160013234
    Abstract: A solid-state imaging device includes: a first lens layer; and a second lens layer, wherein the second lens layer is formed at least at a periphery of each first microlens formed based on the first lens layer, and the second lens layer present at a central portion of each of the first microlenses is thinner than the second lens layer present at the periphery of the first microlens or no second lens layer is present at the central portion of each of the first microlenses.
    Type: Application
    Filed: September 22, 2015
    Publication date: January 14, 2016
    Inventors: Yoichi Ootsuka, Tomoyuki Yamashita, Kiyotaka Tabuchi, Yoshinori Toumiya, Akiko Ogino
  • Patent number: 9159760
    Abstract: A solid-state imaging device with microlenses having a first lens layer and a second lens layer, the second lens layer being formed at least at a periphery of each microlens with either a portion of the second lens layer present at a central portion of each of the microlenses being thinner than a portion of the second lens layer present at the periphery of the microlens or no portion of the second lens layer being present at the central portion of each of the first microlenses. Between first pixel portions there is an interpixel gap, and the solid-state imaging device includes light blocking layers in alignment with the gaps.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: October 13, 2015
    Assignee: SONY CORPORATION
    Inventors: Yoichi Ootsuka, Tomoyuki Yamashita, Kiyotaka Tabuchi, Yoshinori Toumiya, Akiko Ogino
  • Patent number: 9131100
    Abstract: A solid-state imaging device includes a pixel that has a photoelectric conversion section which converts incident light into an electric signal; a color filter which is formed corresponding to the pixel; a micro lens which focuses the incident light to the photoelectric conversion section via the color filter; and an in-layer lens which is formed between the color filter and the micro lens and has a refractive index smaller than that of the micro lens.
    Type: Grant
    Filed: May 28, 2014
    Date of Patent: September 8, 2015
    Assignee: SONY CORPORATION
    Inventors: Yoshinori Toumiya, Yoichi Ootsuka
  • Patent number: 9124822
    Abstract: Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film.
    Type: Grant
    Filed: April 10, 2013
    Date of Patent: September 1, 2015
    Assignee: SONY CORPORATION
    Inventors: Youichi Otsuka, Kazuaki Ogawa, Taichi Natori, Atsushi Yamamoto, Yasunori Koshino, Hitomi Kamiya, Yoshinori Toumiya, Tadayuki Dofuku, Ina Hori, Takayuki Shoya, Yukihiro Sayama, Masaya Shimoji, Yoshikazu Tanaka
  • Patent number: 8981275
    Abstract: A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
    Type: Grant
    Filed: July 13, 2011
    Date of Patent: March 17, 2015
    Assignee: Sony Corporation
    Inventors: Yoshinori Toumiya, Keiji Tatani, Haruhiko Ajisawa, Yuji Inoue, Tetsuhiro Iwashita, Hideaki Kato
  • Publication number: 20150035105
    Abstract: Provided is an image pickup element, including: condenser lenses made of a resin containing fine metal particles; photoelectric conversion elements formed in a silicon substrate and each configured to photoelectrically convert incident light that enter from an outside through corresponding one of the condenser lenses; and a protective film made of a silicon compound, the protective film being formed between the condenser lenses and the silicon substrate.
    Type: Application
    Filed: July 24, 2014
    Publication date: February 5, 2015
    Inventors: Sintaro Nakajiki, Yukihiro Sayama, Yoshinori Toumiya, Tadayuki Dofuku, Toyomi Jinwaki
  • Patent number: 8884392
    Abstract: Disclosed herein is a method of manufacturing a solid state imaging device, including the steps of: forming a light receiving portion in a light receiving area of a semiconductor substrate; forming a pad portion in a pad area of the semiconductor substrate; forming a microlens material layer over the light receiving portion and the pad portion; providing the microlens material layer with a microlens corresponding to the light receiving portion; forming a low-reflection material layer on the microlens material layer; etching the microlens material layer and the low-reflection material layer over the pad portion to form an opening; and imparting hydrophilicity to a surface of the low-reflection material layer and an inside portion of the opening by a normal temperature oxygen radical treatment.
    Type: Grant
    Filed: November 22, 2013
    Date of Patent: November 11, 2014
    Assignee: Sony Corporation
    Inventors: Yoshinori Toumiya, Ina Hori, Tadayuki Dofuku, Hitomi Kamiya, Atsushi Yamamoto, Taichi Natori
  • Publication number: 20140267847
    Abstract: A solid-state imaging device includes a pixel that has a photoelectric conversion section which converts incident light into an electric signal; a color filter which is formed corresponding to the pixel; a micro lens which focuses the incident light to the photoelectric conversion section via the color filter; and an in-layer lens which is formed between the color filter and the micro lens and has a refractive index smaller than that of the micro lens.
    Type: Application
    Filed: May 28, 2014
    Publication date: September 18, 2014
    Applicant: Sony Corporation
    Inventors: Yoshinori Toumiya, Yoichi Ootsuka
  • Patent number: 8779541
    Abstract: A solid-state imaging device including a plurality of pixels arranged two-dimensionally, wherein each of the pixels has at least a planarizing film formed on the upper side of a photoelectric conversion element, a filter formed on the upper side of the planarizing film, and a microlens formed on the upper side of the filter. The filter of some of the pixels is a color filter permitting transmission therethrough of light of a predetermined color component, whereas the filter of other pixels is a white filter permitting transmission therethrough of light in the whole visible spectral range. The refractive indices of the white filter, the microlens and the planarizing film have the following relationship: (Refractive index of white filter)?(Refractive index of microlens)>(Refractive index of planarizing film).
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: July 15, 2014
    Assignee: Sony Corporation
    Inventors: Sintaro Nakajiki, Yukihiro Sayama, Yuichi Seki, Masanori Harasawa, Yoshinori Toumiya
  • Patent number: 8759933
    Abstract: Disclosed herein is a solid-state image pickup element, including: a semiconductor substrate; a pixel portion which is formed on the semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion portion are arranged; an insulating layer formed on the semiconductor substrate so as to cover the photoelectric conversion portion; a hole portion formed in the insulating layer and above the photoelectric conversion portion; a silicon nitride layer formed so as to cover a bottom surface and a side surface of the hole portion; and a buried layer formed on the silicon nitride layer, wherein the silicon nitride layer is formed so as to contain a silicon nitride formed by utilizing an atomic layer deposition method.
    Type: Grant
    Filed: May 27, 2010
    Date of Patent: June 24, 2014
    Assignee: Sony Corporation
    Inventors: Yoshinori Toumiya, Kiyotaka Tabuchi, Yasuyuki Shiga, Iwao Sugiura, Naoyuki Miyashita, Masanori Iwasaki, Katsunori Kokubun, Tomohiro Yamazaki
  • Patent number: 8743265
    Abstract: A solid-state imaging device includes a pixel that has a photoelectric conversion section which converts incident light into an electric signal; a color filter which is formed corresponding to the pixel; a micro lens which focuses the incident light to the photoelectric conversion section via the color filter; and an in-layer lens which is formed between the color filter and the micro lens and has a refractive index smaller than that of the micro lens.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: June 3, 2014
    Assignee: Sony Corporation
    Inventors: Yoshinori Toumiya, Yoichi Ootsuka
  • Patent number: 8729650
    Abstract: A solid-state imaging device includes a layer including an on-chip lens above a sensor section, and the layer including the on-chip lens is composed of an inorganic film which transmits ultraviolet light. The layer including the on-chip lens may further include a planarizing film located below the on-chip lens. A method of fabricating a solid-state imaging device includes the steps of forming a planarizing film composed of a first inorganic film, forming a second inorganic film on the planarizing film, forming a lens-shaped resist layer on the second inorganic film, and etching back the resist layer to form an on-chip lens composed of the second inorganic film. The first inorganic film constituting the planarizing film and the second inorganic film constituting the on-chip lens preferably transmit ultraviolet light.
    Type: Grant
    Filed: April 14, 2008
    Date of Patent: May 20, 2014
    Assignee: Sony Corporation
    Inventors: Kouichi Harada, Yasuhiro Ueda, Nobuhiko Umezu, Kazushi Wada, Yoshinori Toumiya, Takeshi Matsuda
  • Publication number: 20140084406
    Abstract: Disclosed herein is a method of manufacturing a solid state imaging device, including the steps of: forming a light receiving portion in a light receiving area of a semiconductor substrate; forming a pad portion in a pad area of the semiconductor substrate; forming a microlens material layer over the light receiving portion and the pad portion; providing the microlens material layer with a microlens corresponding to the light receiving portion; forming a low-reflection material layer on the microlens material layer; etching the microlens material layer and the low-reflection material layer over the pad portion to form an opening; and imparting hydrophilicity to a surface of the low-reflection material layer and an inside portion of the opening by a normal temperature oxygen radical treatment.
    Type: Application
    Filed: November 22, 2013
    Publication date: March 27, 2014
    Applicant: Sony Corporation
    Inventors: Yoshinori Toumiya, Ina Hori, Tadayuki Dofuku, Hitomi Kamiya, Atsushi Yamamoto, Taichi Natori
  • Patent number: 8603852
    Abstract: Disclosed herein is a method of manufacturing a solid state imaging device, including the steps of: forming a light receiving portion in a light receiving area of a semiconductor substrate; forming a pad portion in a pad area of the semiconductor substrate; forming a microlens material layer over the light receiving portion and the pad portion; providing the microlens material layer with a microlens corresponding to the light receiving portion; forming a low-reflection material layer on the microlens material layer; etching the microlens material layer and the low-reflection material layer over the pad portion to form an opening; and imparting hydrophilicity to a surface of the low-reflection material layer and an inside portion of the opening by a normal temperature oxygen radical treatment.
    Type: Grant
    Filed: June 2, 2010
    Date of Patent: December 10, 2013
    Assignee: Sony Corporation
    Inventors: Yoshinori Toumiya, Ina Hori, Tadayuki Dofuku, Hitomi Kamiya, Atsushi Yamamoto, Taichi Natori
  • Publication number: 20130235230
    Abstract: Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film.
    Type: Application
    Filed: April 10, 2013
    Publication date: September 12, 2013
    Applicant: Sony Corporation
    Inventors: Youichi Otsuka, Kazuaki Ogawa, Taichi Natori, Atsushi Yamamoto, Yasunori Koshino, Hitomi Kamiya, Yoshinori Toumiya, Tadayuki Dofuku, Ina Hori, Takayuki Shoya, Yukihiro Sayama, Masaya Shimoji, Yoshikazu Tanaka