Patents by Inventor Yoshinori Toumiya

Yoshinori Toumiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080135732
    Abstract: A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
    Type: Application
    Filed: December 5, 2007
    Publication date: June 12, 2008
    Applicant: SONY CORPORATION
    Inventors: Yoshinori Toumiya, Keiji Tatani, Haruhiko Ajisawa, Yuji Inoue, Tetsuhiro Iwashita, Hideaki Kato
  • Publication number: 20060151818
    Abstract: The present invention relates to a CMOS-type solid-state imaging device and a method for manufacturing thereof, and provides a solid-state imaging device capable of optimally condensing light by a single intra-layer lens and a manufacturing method capable of forming an intra-layer lens with high precision. The solid-state imaging device according to the present invention includes a plurality of wirings and a plurality of lenses above a light-receiving portion, in which at least one of the plurality of lenses is formed of a single intra-layer lens. The method for manufacturing the solid-state imaging device according to the present invention includes the processes of forming a concave surface or convex surface onto a first insulation layer with a first refractive index using a selective etching method and forming a second insulation layer with a second refractive index onto the concave surface or convex surface to form the intra-layer lens corresponding to the light-receiving portion.
    Type: Application
    Filed: September 18, 2003
    Publication date: July 13, 2006
    Inventor: Yoshinori Toumiya