Abstract: A semiconductor device includes a semiconductor substrate; a first gate insulation film formed on the semiconductor substrate; a second gate insulation film formed on the semiconductor substrate; a first gate electrode formed on the first gate insulation film and fully silicided; and a second gate electrode formed on the second gate insulation film and fully silicided, a gate length or a gate width of the second gate electrode being larger than that of the first gate electrode, and a thickness of the second gate electrode being smaller than that of the first gate electrode.

Abstract: Disclosed is a semiconductor device comprising a semiconductor substrate having isolation regions a p-type MIS transistor comprising a pair of source/drain regions formed in the semiconductor substrate, a gate insulating film formed on the semiconductor substrate, and a gate electrode formed on the gate insulating film and having a first metal layer at least at the gate electrode/gate insulator interface, and an n-type MIS transistor comprising a pair of source/drain regions formed in the semiconductor substrate, a gate insulating film formed on the semiconductor substrate, and a gate electrode formed on the gate insulating film and having a boride layer of the first metal at least at an interface thereof with the gate insulating film.

Abstract: Disclosed is a semiconductor device comprising a semiconductor substrate having isolation regions, and a MIS transistor comprising a gate electrode formed above the semiconductor substrate with a gate insulating film interposed therebetween, and a pair of contact layers formed on the semiconductor substrate sandwiching the gate electrode, the contact layers having an interfacial layer at an interface between the semiconductor substrate and the contact layers, the interfacial layer comprising a metal silicide containing at least one selected from a group consisting of Er, Gd, Tb, Dy, Ho, Tm, Yb, Lu, and Pt.

Abstract: A silicon substrate is prepared, and a titanium intermediate layer is formed on the silicon substrate. Then, a compound element-containing layer containing compound elements to compose an intended silicide film is formed on the titanium intermediate layer, to form a multilayered intermediate structure, which is thermally treated to form the intended silicide film made of silicon elements of the silicon substrate and the compound elements of the compound element-containing layer.

Abstract: A semiconductor device comprises n-type and p-type semiconductor devices formed on the substrate, the n-type device including an n-channel region formed on the substrate, n-type source and drain regions formed opposite to each other interposing the n-channel region therebetween, a first gate insulator formed on the n-channel region, and a first gate electrode formed on the first gate insulator and including a compound of a metal M and a first group-IV elements Si1?a Gea (0?a?1), the p-type device including a p-channel region formed on the substrate, p-type source and drain regions formed opposite to each other interposing the p-channel region therebetween, a second gate insulator formed on the p-channel region, and a second gate electrode formed on the second gate insulator, and including a compound of the metal M and a second group-IV element Si1?c Gec (0?c?1, a?c).

Abstract: An object of the invention is to develop galactose or mannose derivatives of docetaxel, etc. having improved solubility and physiological activity, to alleviate burden imposed on patients and to provide effective therapeutic drug for tumors. The present invention provides taxoid derivatives comprising any of paclitaxel, docetaxel and 10-deacetyl-baccatin III to which galactose or mannose is linked through a spacer, and methods for producing taxoid derivatives comprising reacting paclitaxel, docetaxel or 10-deacetyl-baccatin III with tetrabenzyl acetyloxygalactoside or tetrabenzyl acetyloxymannoside, subjecting the product to debenzylation reaction, and optionally to detriethylsilylation reaction.