Patents by Inventor Yoshinori Yamauchi
Yoshinori Yamauchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9252565Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.Type: GrantFiled: October 20, 2014Date of Patent: February 2, 2016Assignee: Sony CorporationInventors: Tomoyuki Oki, Yuji Masui, Yoshinori Yamauchi, Rintaro Koda, Takahiro Arakida
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Publication number: 20150349494Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.Type: ApplicationFiled: August 11, 2015Publication date: December 3, 2015Inventors: Tomoyuki Oki, Yuji Masui, Yoshinori Yamauchi, Rintaro Koda, Takahiro Arakida
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Publication number: 20150325981Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.Type: ApplicationFiled: June 10, 2015Publication date: November 12, 2015Inventors: Tomoyuki Oki, Yuji Masui, Yoshinori Yamauchi, Rintaro Koda, Takahiro Arakida
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Publication number: 20150293319Abstract: A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.Type: ApplicationFiled: May 29, 2015Publication date: October 15, 2015Inventors: Yoshiaki Watanabe, Hironobu Narui, Yuichi Kuromizu, Yoshinori Yamauchi, Yoshiyuki Tanaka
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Publication number: 20150036710Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.Type: ApplicationFiled: October 20, 2014Publication date: February 5, 2015Inventors: Tomoyuki Oki, Yuji Masui, Yoshinori Yamauchi, Rintaro Koda, Takahiro Arakida
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Publication number: 20150010032Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.Type: ApplicationFiled: May 8, 2014Publication date: January 8, 2015Applicant: SONY CORPORATIONInventors: Tomoyuki Oki, Yuji Masui, Yoshinori Yamauchi, Rintaro Koda, Takahiro Arakida
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Patent number: 8761221Abstract: A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.Type: GrantFiled: April 3, 2008Date of Patent: June 24, 2014Assignee: Sony CorporationInventors: Tomoyuki Oki, Yuji Masui, Yoshinori Yamauchi, Rintaro Koda, Takahiro Arakida
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Patent number: 8514905Abstract: A laser diode with which separation of a current narrowing layer is able to be prevented is provided. The laser diode includes a mesa that has a first multilayer film reflector, an active layer, and a second multilayer film reflector in this order, and has a current narrowing layer for narrowing a current injected into the active layer and a buffer layer adjacent to the current narrowing layer. The current narrowing layer is formed by oxidizing a first oxidized layer containing Al. The buffer layer is formed by oxidizing a second oxidized layer whose material and a thickness are selected so that an oxidation rate is higher than that of the first multilayer film reflector and the second multilayer film reflector and is lower than that of the first oxidized layer. A thickness of the buffer layer is 10 nm or more.Type: GrantFiled: August 23, 2010Date of Patent: August 20, 2013Assignee: Sony CorporationInventors: Yuji Masui, Rintaro Koda, Tomoyuki Oki, Takahiro Arakida, Naoki Jogan, Yoshinori Yamauchi
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Patent number: 8497141Abstract: A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.Type: GrantFiled: August 8, 2011Date of Patent: July 30, 2013Assignee: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Kayoko Kikuchi, Rintaro Koda, Norihiko Yamaguchi
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Patent number: 8385381Abstract: In a VCSEL, a first multilayer film reflector, an active layer having a light emitting central region, a second multilayer film reflector, and a transverse mode adjustment layer are layered in this order. The first multilayer film reflector has a quadrangle current injection region with an intersection of diagonal lines corresponding to the light emitting central region. The second multilayer film reflector has a light emitting window provided in a region corresponding to one diagonal line of the current injection region and a pair of grooves provided with the light emitting window in between. The transverse mode adjustment layer is provided correspondingly to the light emitting window, and reflectance of a peripheral region thereof is lower than that of a central region thereof.Type: GrantFiled: June 28, 2006Date of Patent: February 26, 2013Assignee: Sony CorporationInventors: Osamu Maeda, Masaki Shiozaki, Norihiko Yamaguchi, Yoshinori Yamauchi, Yuji Masui
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Patent number: 8102890Abstract: A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer.Type: GrantFiled: March 21, 2011Date of Patent: January 24, 2012Assignee: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Rintaro Koda, Tomoyuki Oki, Naoki Jogan
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Publication number: 20110294236Abstract: A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.Type: ApplicationFiled: August 8, 2011Publication date: December 1, 2011Applicant: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Kayoko Kikuchi, Rintaro Koda, Norihiko Yamaguchi
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Patent number: 8035187Abstract: The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductivity type layer, a light absorbing layer, and a second conductivity type layer having a light incidence plane in order. The semiconductor light receiving element has an oxidation layer including a non-oxidation region and an oxidation region in a stacking in-plane direction in the light absorbing layer or between the first conductivity type layer and the light absorbing layer.Type: GrantFiled: January 29, 2009Date of Patent: October 11, 2011Assignee: Sony CorporationInventors: Yoshinori Yamauchi, Takahiro Arakida, Rintaro Koda, Norihiko Yamaguchi, Yuji Masui, Tomoyuki Oki
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Patent number: 8022424Abstract: A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.Type: GrantFiled: June 5, 2007Date of Patent: September 20, 2011Assignee: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Kayoko Kikuchi, Rintaro Koda, Norihiko Yamaguchi
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Publication number: 20110176570Abstract: A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer.Type: ApplicationFiled: March 21, 2011Publication date: July 21, 2011Applicant: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Rintaro Koda, Tomoyuki Oki, Naoki Jogan
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Patent number: 7965750Abstract: A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer.Type: GrantFiled: April 21, 2009Date of Patent: June 21, 2011Assignee: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Rintaro Koda, Tomoyuki Oki, Naoki Jogan
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Patent number: 7920615Abstract: A surface-emitting laser diode capable of being manufactured easily at low cost, and capable of stabilizing the polarization direction of laser light in one direction and achieving higher output is provided. A light emission section 20 in which a lower first DBR mirror layer 12, a lower second DBR mirror layer 13, a lower spacer layer 14, an active layer 15 including a light emission region 15A, an upper spacer layer 16, a current confinement layer 17, an upper DBR mirror layer 18 and a contact layer 19 are laminated in this order is included on a substrate 10. The lower first DBR mirror layer 12 includes an oxidation section 30 nonuniformly distributed in a direction rotating around the light emission region 15A in a periphery of a region corresponding to the light emission region 15A. The oxidation section 30 includes a pair of multilayer films 31 and 32, and is formed by oxidizing a low refractive index layer 12A.Type: GrantFiled: June 4, 2007Date of Patent: April 5, 2011Assignee: Sony CorporationInventors: Osamu Maeda, Masaki Shiozaki, Norihiko Yamaguchi, Yoshinori Yamauchi
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Publication number: 20110064109Abstract: A laser diode with which separation of a current narrowing layer is able to be prevented is provided. The laser diode includes a mesa that has a first multilayer film reflector, an active layer, and a second multilayer film reflector in this order, and has a current narrowing layer for narrowing a current injected into the active layer and a buffer layer adjacent to the current narrowing layer. The current narrowing layer is formed by oxidizing a first oxidized layer containing Al. The buffer layer is formed by oxidizing a second oxidized layer whose material and a thickness are selected so that an oxidation rate is higher than that of the first multilayer film reflector and the second multilayer film reflector and is lower than that of the first oxidized layer. A thickness of the buffer layer is 10 nm or more.Type: ApplicationFiled: August 23, 2010Publication date: March 17, 2011Applicant: Sony CorporationInventors: Yuji Masui, Rintaro Koda, Tomoyuki Oki, Takahiro Arakida, Naoki Jogan, Yoshinori Yamauchi
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Patent number: 7873092Abstract: The present invention provides a laser diode realizing improved light detection precision. The laser diode includes a stack structure in which a first semiconductor layer of a first conduction type, an active layer, and a second semiconductor layer of a second conduction type are included in this order; a photodetection layer; and a plurality of light absorption layers provided on the corresponding position of antinodes or nodes of standing waves of light output from the active layer.Type: GrantFiled: October 31, 2007Date of Patent: January 18, 2011Assignee: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Norihiko Yamaguchi, Rintaro Koda, Tomoyuki Oki
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Patent number: 7871841Abstract: A method of manufacturing a semiconductor light-emitting device includes steps of forming a vertical cavity structure including a layer to be oxidized on a semiconductor substrate, and then forming a circular groove having a depth which penetrates at least the layer to be oxidized from an upper surface of the vertical cavity structure, thereby forming a columnar mesa whose side face is surrounded by the groove, oxidizing the layer to be oxidized from the side face of the mesa, thereby forming a current confinement layer, and forming a mask layer covering at least a central region of the upper surface of the mesa and exposing at least an edge of the upper surface and the side face of the mesa to an external, and then etching at least the edge of the upper surface and the side face of the mesa by using the mask layer as a mask.Type: GrantFiled: October 1, 2008Date of Patent: January 18, 2011Assignee: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Rintaro Koda, Tomoyuki Oki