Abstract: One embodiment provides a semiconductor device having a first chip for lowering an input voltage and a second chip for performing signal processing, mounted on a die pad. Lead terminals are divided into a first lead row and a second lead row. The first lead row are connected with the first chip, the first chip are connected with the second chip or the second lead row, and the second chip are connected with the second lead row. A distance between the lead terminals of the first lead row is set longer than a distance between the lead terminals of the second lead row, and a sealing resin is provided to fill at least between the lead terminals of the first lead row.

Abstract: There is provided a mounting structure of electronic components wherein the heat sink is disposed so as to allow a high heat releasing property to be achieved and ensure that manufacturing is easy. The resin film is provided at the lower surface side of the whole circuit element to which the lead is connected; a molding resin is molded at the upper side from the lower surface of the lead including the side portions of the lead, the circuit element and the connecting portions of the lead and the circuit element; the lead is connected to the electrode of the circuit board so that flattened back surfaces of a plurality of one side resin-molded elements are on the same horizontal plane; and a single heat sink is mounted on the back surfaces of the plurality of one side resin-molded elements.

Abstract: One embodiment provides a semiconductor device having a first chip for lowering an input voltage and a second chip for performing signal processing, mounted on a die pad. Lead terminals are divided into a first lead row and a second lead row. The first lead row are connected with the first chip, the first chip are connected with the second chip or the second lead row, and the second chip are connected with the second lead row. A distance between the lead terminals of the first lead row is set longer than a distance between the lead terminals of the second lead row, and a sealing resin is provided to fill at least between the lead terminals of the first lead row.

Abstract: A circuit package having an inner lead, an outer lead and a circuit element is provided, in which the circuit element is connected a first surface of the inner lead. The circuit package has a first molded resin portion and second molded resin portions. The first molded resin portion is formed from a second surface, opposite to the first surface, of the inner lead toward the first surface inner lead embedding the inner lead and the circuit element. And the second molded resin portions are formed on side portions of the outer lead excluding the first and second surfaces of the outer lead.

Abstract: An aluminum material can be used on a surface of the electrode of a semiconductor element, this aluminum layer need not be formed thick unnecessarily, a copper wire is bonded strongly to the semiconductor element irrespective of a diameter of the wire, and high heat resistance can be achieved. Silicon carbide (SiC) is used as a substrate of the semiconductor element 10, the titanium layer 20 and the aluminum layer 21 are formed as the electrode 15 on the silicon carbide substrate, and by a ball bonding or a wedge bonding of the copper wire 16 to the aluminum layer 21 of the electrode 15 while applying ultrasonic wave, the copper-aluminum compound layer 23 (Al4Cu9, AlCu or the like) is formed between the copper wire 16 and the titanium layer 20.

Abstract: A semiconductor device having high breakdown voltage and high reliability without forming an embedded injection layer with high position accuracy. The semiconductor device includes a base as an active area of a second conductivity type formed on a surface layer of a semiconductor layer of a first conductivity type to constitute a semiconductor element; guard rings as a plurality of first impurity regions of the second conductivity type formed on the surface layer of the semiconductor layer spaced apart from each other to respectively surround the base in plan view; and an embedded injection layer as a second impurity region of the second conductivity type embedded in the surface layer of the semiconductor layer to connect at least two bottom portions of the plurality of guard rings.

Abstract: There is provided a mounting structure of electronic components wherein the heat sink is disposed so as to allow a high heat releasing property to be achieved and ensure that manufacturing is easy. The resin film is provided at the lower surface side of the whole circuit element to which the lead is connected; a molding resin is molded at the upper side from the lower surface of the lead including the side portions of the lead, the circuit element and the connecting portions of the lead and the circuit element; the lead is connected to the electrode of the circuit board so that flattened back surfaces of a plurality of one side resin-molded elements are on the same horizontal plane; and a single heat sink is mounted on the back surfaces of the plurality of one side resin-molded elements.

Abstract: There is provided a circuit package which makes it possible to reduce equipment investment and production cost, change a package size easily according to specifications, and produce a lead frame having an outer lead with a proper length. In the circuit package in which a circuit element is connected to the top surface of the inner lead of the lead frame, the circuit package has a first molded resin portion formed at an upper side of a bottom surface of the lead frame so as to cover the inner lead of the lead frame and a portion of the circuit element to be connected to the inner lead and a second molded resin portion formed at side portions of the outer lead except the top and bottom surfaces of the outer lead.

Abstract: A semiconductor device capable of suppressing generation of a high electric field and preventing a dielectric breakdown from occurring, and a method of manufacturing the same. The method of manufacturing a semiconductor device includes (a) preparing an n+ substrate to be a ground constituted by a silicon carbide semiconductor of a first conductivity type, (b) forming a recess structure surrounding an element region on the n+ substrate by using a resist pattern, and (d) forming a guard ring injection layer to be an impurity layer of a second conductivity type in a recess bottom surface and a recess side surface in the recess structure by impurity injection through the resist pattern, and a corner portion of the recess structure is covered with the impurity layer.

Abstract: A semiconductor device having high breakdown voltage and high reliability without forming an embedded injection layer with high position accuracy. The semiconductor device includes a base as an active area of a second conductivity type formed on a surface layer of a semiconductor layer of a first conductivity type to constitute a semiconductor element; guard rings as a plurality of first impurity regions of the second conductivity type formed on the surface layer of the semiconductor layer spaced apart from each other to respectively surround the base in plan view; and an embedded injection layer as a second impurity region of the second conductivity type embedded in the surface layer of the semiconductor layer to connect at least two bottom portions of the plurality of guard rings.

Abstract: In a busbar unit, which is a distributing device arranged to supply electrical currents to coils, a busbar holder is arranged to support coil connection busbars and sensor connection busbars. Conductor wire connection portions of the coil connection busbars are exposed on both axial sides and welded to a conductor wire defining the coils. The sensor connection busbars are combined with a plurality of electronic components to define a Hall IC circuit designed to output and receive electrical signals to or from Hall ICs. Sensor connection portions of the sensor connection busbars are exposed on both axial sides, and welded to terminals of the Hall ICs. Electronic component connection portions of the sensor connection busbars are exposed on both axial sides, and welded to the electronic components.

Abstract: In a busbar unit, which is a distributing device arranged to supply electrical currents to coils, a busbar holder is arranged to support coil connection busbars and sensor connection busbars. A bottom surface portion of a busbar holder body portion includes a bearing holder holding a bearing defined therein, and includes resistors and capacitors defining a portion of a Hall IC circuit arranged thereon. The Hall IC circuit is arranged to input and output electrical signals to or from Hall ICs. An upper surface portion includes sensor holders each holding a separate one of the Hall ICs defined therein. A connector portion is arranged to project radially outward from the busbar holder body portion. The sensor connection busbars and each of the coil connection busbars are arranged one above another along an axial direction.

Abstract: An aluminum material can be used on a surface of the electrode of a semiconductor element, this aluminum layer need not be formed thick unnecessarily, a copper wire is bonded strongly to the semiconductor element irrespective of a diameter of the wire, and high heat resistance can be achieved. Silicon carbide (SiC) is used as a substrate of the semiconductor element 10, the titanium layer 20 and the aluminum layer 21 are formed as the electrode 15 on the silicon carbide substrate, and by a ball bonding or a wedge bonding of the copper wire 16 to the aluminum layer 21 of the electrode 15 while applying ultrasonic wave, the copper-aluminum compound layer 23 (Al4Cu9, AlCu or the like) is formed between the copper wire 16 and the titanium layer 20.

Abstract: A semiconductor device capable of suppressing generation of a high electric field and preventing a dielectric breakdown from occurring, and a method of manufacturing the same. The method of manufacturing a semiconductor device includes (a) preparing an n+ substrate to be a ground constituted by a silicon carbide semiconductor of a first conductivity type, (b) forming a recess structure surrounding an element region on the n+ substrate by using a resist pattern, and (c) forming a guard ring injection layer to be an impurity layer of a second conductivity type in a recess bottom surface and a recess side surface in the recess structure by impurity injection through the resist pattern, and a corner portion of the recess structure is covered with the impurity layer.

Abstract: A connection member which connects an outside portion of a cross member and an inside wall face portion of a side sill includes a cross-member-side connection portion connected to the cross member and a side-sill-side connection portion connected to the side sill, the side-sill-side connection portion is configured to have a lower rigidity than the cross-member-side connection portion, and an outside end portion of the cross member is located at a specified position which is located on the outside of the cross-member-side connection portion and on the inside away from the inside wall face portion of the side sill. Thereby, the impact load in the vehicle side collision can be effectively supported by the cross member with a simple structure.

Abstract: A connection member which connects an outside portion of a cross member and an inside wall face portion of a side sill includes a cross-member-side connection portion connected to the cross member and a side-sill-side connection portion connected to the side sill, the side-sill-side connection portion is configured to have a lower rigidity than the cross-member-side connection portion, and an outside end portion of the cross member is located at a specified position which is located on the outside of the cross-member-side connection portion and on the inside away from the inside wall face portion of the side sill. Thereby, the impact load in the vehicle side collision can be effectively supported by the cross member with a simple structure.

Abstract: An electric pump for use with an engine in a vehicle is provided. The electric pump has an impeller having a plurality of blades for moving coolant. A working surface of each blade is formed to be a flat plane which extends generally straight in both an axial direction and a radial direction. The electric pump is formed by a centrifugal pump. When the electric pump is not operating and is used as a portion of a coolant passage, flowing resistance can be reduced as compared with a case where the working surface of each blade is curved.

Abstract: A method for analyzing a plurality of amino acids in a fluid sample by a user is provided comprising the steps of introducing the sample into a buffer solution, passing the sample in the buffer solution through a separation column and setting a lithium ion concentration in the buffer to no more than 0.3 mols/L up to a time before ?-aminoisobutyric acid (?-AiBA) is eluted.

Abstract: In a busbar unit, which is a distributing device arranged to supply electrical currents to coils, a busbar holder is arranged to support coil connection busbars and sensor connection busbars. A bottom surface portion of a busbar holder body portion includes a bearing holder holding a bearing defined therein, and includes resistors and capacitors defining a portion of a Hall IC circuit arranged thereon. The Hall IC circuit is arranged to input and output electrical signals to or from Hall ICs. An upper surface portion includes sensor holders each holding a separate one of the Hall ICs defined therein. A connector portion is arranged to project radially outward from the busbar holder body portion. The sensor connection busbars and each of the coil connection busbars are arranged one above another along an axial direction.

Abstract: In a busbar unit, which is a distributing device arranged to supply electrical currents to coils, a busbar holder is arranged to support coil connection busbars and sensor connection busbars. Conductor wire connection portions of the coil connection busbars are exposed on both axial sides and welded to a conductor wire defining the coils. The sensor connection busbars are combined with a plurality of electronic components to define a Hall IC circuit designed to output and receive electrical signals to or from Hall ICs. Sensor connection portions of the sensor connection busbars are exposed on both axial sides, and welded to terminals of the Hall ICs. Electronic component connection portions of the sensor connection busbars are exposed on both axial sides, and welded to the electronic components.