Patents by Inventor Yoshio Inagaki

Yoshio Inagaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190285445
    Abstract: A first connection line includes a first tube-side wiring pattern formed on an outer periphery of a measuring tube and connected at one end thereof to a first surface electrode, a first substrate-side wiring pattern formed on a preamplifier substrate and connected at one end thereof to a preamplifier, and a first jumper wire connecting the other end of the first tube-side wiring pattern to the other end of the first substrate-side wiring pattern; and a second connection line includes a second tube-side wiring pattern formed on the outer periphery of the measuring tube and connected at one end thereof to a second surface electrode, a second substrate-side wiring pattern formed on the preamplifier substrate and connected at one end thereof to the preamplifier, and a second jumper wire connecting the other end of the second tube-side wiring pattern to the other end of the second substrate-side wiring pattern.
    Type: Application
    Filed: March 12, 2019
    Publication date: September 19, 2019
    Applicant: AZBIL CORPORATION
    Inventors: Osamu MOMOSE, Hiroyuki INAGAKI, Kouichi MAMADA, Yoshio YAMAZAKI, Takumi YAMASHITA
  • Publication number: 20190285446
    Abstract: A preamplifier substrate on which a preamplifier is mounted, the preamplifier being configured to amplify electromotive forces detected by a pair of surface electrodes, is disposed outside a flux region where a magnetic flux is produced, and the preamplifier substrate extends in a direction intersecting a measuring tube.
    Type: Application
    Filed: March 12, 2019
    Publication date: September 19, 2019
    Applicant: AZBIL CORPORATION
    Inventors: Osamu MOMOSE, Hiroyuki INAGAKI, Kouichi MAMADA, Yoshio YAMAZAKI, Takumi YAMASHITA
  • Patent number: 9449732
    Abstract: The present invention provides a charge transport film which is prepared through subjecting a coating film including at least one charge transporting agent to an atmospheric pressure plasma treatment, wherein electron transfer between the charge transport film and a substance that contacts with the charge transport film is promoted, and deterioration in performance due to diffusion and mixing or crystallization of low molecular weight components, such as a charge transporting agent, incorporated in a cured film is suppressed also in the case of film formation by a wet method, and which exhibits excellent charge transportability and stability over time; a production method with good productivity; and a light-emitting element and photoelectric conversion element equipped with the charge transport film, the atmospheric pressure plasma treatment being preferably a treatment that applies plasma, which is generated using a plasma generating apparatus and conveyed using an inert gas, to the coating film.
    Type: Grant
    Filed: November 29, 2010
    Date of Patent: September 20, 2016
    Assignee: FUJIFILM Corporation
    Inventors: Naoyuki Hayashi, Yoshio Inagaki, Tasuku Satou, Kana Morohashi, Koji Takaku, Ryo Nishio
  • Publication number: 20140170405
    Abstract: Provided are novel plasma-assisted processes for preparing cured films having excellent heat resistance and moisture resistance. A process for preparing a cured film, comprising at least: applying a composition containing (A) at least one conductive polymer precursor on a substrate to form a coating layer, and irradiating the coating layer with a plasma to polymerize the conductive polymer precursor (A).
    Type: Application
    Filed: February 25, 2014
    Publication date: June 19, 2014
    Applicant: FUJIFILM Corporation
    Inventors: Masaomi MAKINO, Yoshio INAGAKI
  • Patent number: 8686133
    Abstract: The invention provides an oxo-titanylphthalocyanine crystal which is stable, is superior in dispersibility in a photoreceptive layer and efficiently contributes to improvements in sensitivity and charge retention rate of an electrophotographic photoreceptor when it is used as a charge generating agent, a method for producing the oxo-titanylphthalocyanine crystal, and an electrophotographic photoreceptor.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: April 1, 2014
    Assignee: Kyocera Document Solutions Inc.
    Inventors: Daisuke Kuboshima, Jun Azuma, Yoshio Inagaki, Junichiro Otsubo, Keiji Maruo
  • Patent number: 8679710
    Abstract: The present invention provides an electrophotographic photoreceptor comprising a photosensitive layer that contains at least a charge generating agent, a hole transport agent and a prede mulas (A) and (B). The electrophotographic photoreceptor prevents image defect termined additive. The hole transport agent satisfies the following for from occurring and can meet the demand for higher speed image forming apparatuses, by reducing the adhesion of paper dust and preventing the occurrence of cracks. ? ? M < 1.2 × 10 - 8 ( A ) ? ? > 5.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: March 25, 2014
    Assignee: Kyocera Document Solutions Inc.
    Inventors: Daisuke Kuboshima, Eiichi Miyamoto, Kazunari Hamasaki, Norio Nakai, Yoshio Inagaki, Hideki Okada, Tetsuya Ichiguchi, Keiji Maruo
  • Publication number: 20140079939
    Abstract: A producing method of a plasma polymerized film includes irradiating a composition containing at least one kind of radically polymerizable compound, and at least one of a polymerization initiator and a chain transfer agent with plasma. The plasma polymerized film is formed by polymerizing a composition containing at least one of a polymerization initiator and a chain transfer agent, and at least one kind of radically polymerizable compound by irradiation of plasma.
    Type: Application
    Filed: November 26, 2013
    Publication date: March 20, 2014
    Applicant: Fujifilm Corporation
    Inventors: Naoyuki HAYASHI, Yoshio INAGAKI, Ryo FUJIWARA
  • Patent number: 8647876
    Abstract: An oxygen permeability measuring apparatus for measuring an oxygen permeation rate of oxygen barrier film in a dark room is provided. A container is charged with inert gas, and sealed hermetically by use of the oxygen barrier film at least partially. A chemiluminescent compound is contained in the container, for emitting light by oxidation with the oxygen. A photon detector detects photons emitted by the chemiluminescent compound so as to determine an amount of the oxygen permeated through the oxygen barrier film. Preferably, the container includes a container body. An opening is formed in the container body, and closed hermetically by the oxygen barrier film attached thereto. The photon detector is disposed inside or outside the container. The oxygen permeation rate is equal to or less than 10?2 cc/m2·day·atm. The chemiluminescent compound includes tetrakis(dimethylamino)ethylene.
    Type: Grant
    Filed: March 31, 2011
    Date of Patent: February 11, 2014
    Assignee: Fujifilm Corporation
    Inventors: Tomoyuki Shimoda, Yoshio Inagaki, Kimiaki Miyamoto
  • Patent number: 8518756
    Abstract: A method for crystallizing a thin film A gate insulating film formed on a substrate so as to cover a gate electrode. A light absorption layer is formed thereon through a buffer layer. Energy lines Lh are applied to the light absorption layer from a continuous-wave laser such as a semiconductor laser. This anneals only a surface side of the light absorption layer Lh and produces a crystalline silicon film obtained by crystallizing the amorphous silicon film using heat generated by thermal conversion of the energy lines Lh at the light absorption layer and heat of the annealing reaction.
    Type: Grant
    Filed: April 6, 2012
    Date of Patent: August 27, 2013
    Assignee: Sony Corporation
    Inventors: Nobuhiko Umezu, Koichi Tsukihara, Goh Matsunobu, Yoshio Inagaki, Koichi Tatsuki, Shin Hotta, Katsuya Shirai
  • Patent number: 8482008
    Abstract: A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.
    Type: Grant
    Filed: April 11, 2012
    Date of Patent: July 9, 2013
    Assignee: Sony Corporation
    Inventors: Toshiaki Arai, Yoshio Inagaki
  • Patent number: 8351105
    Abstract: The present invention provides a color tone variable film which is formed by a reaction of a cationic polymer containing a structural unit containing a positive ionic group in a side chain and a compound containing an acid group and a partial structure which can change color tone as a result of energy application, which can be formed by a wet method, which has flexibility and strength in practical use, and which changes color tone with high sensitivity as a result of energy application, a simple manufacturing method thereof, and an electrochromic element obtained by the manufacturing method.
    Type: Grant
    Filed: March 24, 2011
    Date of Patent: January 8, 2013
    Assignee: FUJIFILM Corporation
    Inventors: Yoshio Inagaki, Shinichi Morishima
  • Publication number: 20120296082
    Abstract: The invention provides an oxo-titanylphthalocyanine crystal which is stable, is superior in dispersibility in a photoreceptive layer and efficiently contributes to improvements in sensitivity and charge retention rate of an electophotographic photoreceptor when it is used as a charge generating agent, a method for producing the oxo-titanylphthalocyanine crystal, and an electrophotographic photoreceptor the oxo-titanylphthalocyanine crystal has predetermined optical characteristics and thermal properties and is produced by a production method including the following steps (a) to (d): (a) a step of dissolving a crude oxo-titanylphthalocyanine crystal in an acid to obtain an oxo-titanylphthalocyanine solution; (b) a step of adding the oxo-titanylphthalocyanine solution dropwise in a poor solvent to obtain a wet cake; (c) a step of washing the wet cake with an alcohol having 1 to 4 carbon atoms; and (d) a step of stirring the washed wet cake under heating in a nonaqueous solvent to obtain an oxo-titanylphthalocya
    Type: Application
    Filed: July 11, 2012
    Publication date: November 22, 2012
    Inventors: Daisuke KUBOSHIMA, Jun AZUMA, Yoshio INAGAKI, Junichiro OTSUBO, Keiji MARUO
  • Publication number: 20120256182
    Abstract: A thin film transistor having a crystalline silicon film that is formed by irradiating an amorphous silicon film with a light beam through a photothermal conversion layer and an insulating film to provide the amorphous silicon film with heat treatment.
    Type: Application
    Filed: June 21, 2012
    Publication date: October 11, 2012
    Applicant: SONY CORPORATION
    Inventors: Toshiaki Arai, Yoshio Inagaki
  • Publication number: 20120238774
    Abstract: The present invention provides a charge transport film which is prepared through subjecting a coating film including at least one charge transporting agent to an atmospheric pressure plasma treatment, wherein electron transfer between the charge transport film and a substance that contacts with the charge transport film is promoted, and deterioration in performance due to diffusion and mixing or crystallization of low molecular weight components, such as a charge transporting agent, incorporated in a cured film is suppressed also in the case of film formation by a wet method, and which exhibits excellent charge transportability and stability over time; a production method with good productivity; and a light-emitting element and photoelectric conversion element equipped with the charge transport film, the atmospheric pressure plasma treatment being preferably a treatment that applies plasma, which is generated using a plasma generating apparatus and conveyed using an inert gas, to the coating film.
    Type: Application
    Filed: November 29, 2010
    Publication date: September 20, 2012
    Applicant: FUJIFILM CORPORATION
    Inventors: Naoyuki Hayashi, Yoshio Inagaki, Tasuku Satou, Kana Morohashi, Koji Takaku, Ryo Nishio
  • Publication number: 20120205660
    Abstract: A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.
    Type: Application
    Filed: April 11, 2012
    Publication date: August 16, 2012
    Applicant: Sony Corporation
    Inventors: Toshiaki ARAI, Yoshio INAGAKI
  • Patent number: 8242261
    Abstract: The invention provides an oxo-titanylphthalocyanine crystal which is stable, is superior in dispersibility in a photoreceptive layer and efficiently contributes to improvements in sensitivity and charge retention rate of an electrophotographic photoreceptor when it is used as a charge generating agent, a method for producing the oxo-titanylphthalocyanine crystal, and an electrophotographic photoreceptor.
    Type: Grant
    Filed: October 1, 2010
    Date of Patent: August 14, 2012
    Assignee: Kyocera Mita Corporation
    Inventors: Daisuke Kuboshima, Jun Azuma, Yoshio Inagaki, Junichiro Otsubo, Keiji Maruo
  • Publication number: 20120196395
    Abstract: A method for crystallizing a thin film A gate insulating film formed on a substrate so as to cover a gate electrode. A light absorption layer is formed thereon through a buffer layer. Energy lines Lh are applied to the light absorption layer from a continuous-wave laser such as a semiconductor laser. This anneals only a surface side of the light absorption layer Lh and produces a crystalline silicon film obtained by crystallizing the amorphous silicon film using heat generated by thermal conversion of the energy lines Lh at the light absorption layer and heat of the annealing reaction.
    Type: Application
    Filed: April 6, 2012
    Publication date: August 2, 2012
    Applicant: Sony Corporation
    Inventors: Nobuhiko UMEZU, Koichi TSUKIHARA, Goh MATSUNOBU, Yoshio INAGAKI, Koichi TATSUKI, Shin HOTTA, Katsuya SHIRAI
  • Patent number: 8222643
    Abstract: A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.
    Type: Grant
    Filed: October 21, 2009
    Date of Patent: July 17, 2012
    Assignee: Sony Corporation
    Inventors: Toshiaki Arai, Yoshio Inagaki
  • Patent number: 8168518
    Abstract: A gate insulating film (13) is formed on a substrate (1) so as to cover a gate electrode (11), and an amorphous silicon film (semiconductor thin film) (15) is further formed. A light absorption layer (19) is formed thereon through a buffer layer (17). Energy lines Lh are applied to the light absorption layer (19) from a continuous-wave laser such as a semiconductor laser. This oxidizes only a surface side of the light absorption layer Lh and produces a beautiful crystalline silicon film (15a) obtained by crystallizing the amorphous silicon film (15) using heat generated by thermal conversion of the energy lines Lh at the light absorption layer (19) and heat of the oxidation reaction. This provides a method for crystallizing a thin film with good controllability at low costs achieved with simpler process.
    Type: Grant
    Filed: April 30, 2008
    Date of Patent: May 1, 2012
    Assignee: Sony Corporation
    Inventors: Nobuhiko Umezu, Koichi Tsukihara, Goh Matsunobu, Yoshio Inagaki, Koichi Tatsuki, Shin Hotta, Katsuya Shirai
  • Patent number: 8110519
    Abstract: The objective is to present compositions obtained by supporting by polymers micro clusters of transition metals and the like that are useful as catalysts in various reactions and, once used, are readily recovered and reused. A polymer-supported metal cluster composition is obtained by supporting a transition metal by a cross-linked polymer, and the polymer-supported cluster composition is characterized by the cross-linked polymer obtained by cross-linking of a cross-linkable polymer containing a hydrophilic side chain and a hydrophobic side chain group having a cross-linkable functional group. This polymer-supported metal cluster composition is, for example, preferably formed by first forming a micelle composed of the metal clusters supported by the cross-linkable polymer in a suitable solution and subsequently subjecting the cross-linkable polymer to a cross-linking reaction.
    Type: Grant
    Filed: March 7, 2005
    Date of Patent: February 7, 2012
    Assignees: Japan Science & Technology Agency, Wako Pure Chemical Industries, Ltd., Fuji Photo Film Co., Ltd.
    Inventors: Shu Kobayashi, Kuniaki Okamoto, Ryo Akiyama, Keiji Ohno, Yoshio Inagaki