Abstract: A crosslinked carbon nanotube, in which multiple carbon nanotubes therein are crosslinked with each other at multiple cross-linking sites via a connecting group containing a ?-electron conjugation system, and the bond between the connecting group and the carbon nanotube is not an ester or amido bond.

Abstract: The invention provides an oxo-titanylphthalocyanine crystal which is stable, is superior in dispersibility in a photoreceptive layer and efficiently contributes to improvements in sensitivity and charge retention rate of an electrophotographic photoreceptor when it is used as a charge generating agent, a method for producing the oxo-titanylphthalocyanine crystal, and an electrophotographic photoreceptor.

Abstract: A method of manufacturing a semiconductor device includes the steps of: modifying a semiconductor film by applying a laser beam; and forming a semiconductor device on the modified semiconductor film. In the step of modifying the semiconductor film, the laser beam and the substrate are moved relative to each other in a first direction and a second direction which is opposite to the first direction, a change in an optical characteristic between an area irradiated with the laser beam and an area which is not irradiated with the laser beam in the substrate or an optical characteristic of the irradiated area is measured in each of the first and second directions, and irradiation power of the laser beam is modulated so that the difference between a measurement result in the first direction and a measurement result in the second direction lies in a predetermined range.

Abstract: A two-photon absorbing optical recording material comprising at least one two-photon absorbing compound and a recording component is provided. Recording is made on it by utilizing the two-photon absorption of the two-photon absorbing compound in the material, and then the material is irradiated with light to thereby detect the difference in the reflectance between the recorded area and the unrecorded area thereof, and the recorded information is thereby reproduced from the material, and also provided are a photosensitive polymer composition and a photon-mode recording method for the material.

Abstract: A two-photon absorbing optical recording material comprising at least one two-photon absorbing compound and a recording component is provided. Recording is made on it by utilizing the two-photon absorption of the two-photon absorbing compound in the material, and then the material is irradiated with light to thereby detect the difference in the reflectance between the recorded area and the unrecorded area thereof, and the recorded information is thereby reproduced from the material, and also provided are a photosensitive polymer composition and a photon-mode recording method for the material.

Abstract: A method of forming a semiconductor thin film includes the steps of: forming an amorphous semiconductor thin film on a substrate; partially forming a crystalline semiconductor thin film for each element region by irradiating laser light to the amorphous semiconductor thin film to selectively perform a heating treatment on the amorphous semiconductor thin film, and crystallizing an amorphous semiconductor thin film corresponding to an irradiation region; and inspecting crystallinity of the crystalline semiconductor thin film. The inspection step includes the steps of obtaining an optical step based on an optical phase difference between a crystallized region and an uncrystallized region by irradiating light to the crystalline semiconductor thin film and the amorphous semiconductor thin film, and evaluating one or both of sorting of the crystalline semiconductor thin film and control of crystallinity of the crystalline semiconductor thin film, based on the obtained optical step.

Abstract: A gate insulating film (13) is formed on a substrate (1) so as to cover a gate electrode (11), and an amorphous silicon film (semiconductor thin film) (15) is further formed. A light absorption layer (19) is formed thereon through a buffer layer (17). Energy lines Lh are applied to the light absorption layer (19) from a continuous-wave laser such as a semiconductor laser. This oxidizes only a surface side of the light absorption layer Lh and produces a beautiful crystalline silicon film (15a) obtained by crystallizing the amorphous silicon film (15) using heat generated by thermal conversion of the energy lines Lh at the light absorption layer (19) and heat of the oxidation reaction. This provides a method for crystallizing a thin film with good controllability at low costs achieved with simpler process.

Abstract: A dye composition is provided and includes a non-aqueous dye and an ionic liquid. A dyeing method is provided and includes a process of applying the dye composition to an object, and a process of removing fluidity of the dye composition.

Abstract: An electrophotographic photoconductor having an excellent crack resistance and wear resistance as well as excellent sensitivity characteristics, while keeping good image characteristics of the photoconductor is provided. In addition, an image-forming apparatus equipped with such an electrophotographic photoconductor is also provided. The electrophotographic photoconductor includes a photosensitive layer containing at least a charge-generating agent, a hole-transfer agent, and a binder resin on a conductive substrate.

Abstract: A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.

Abstract: A method of manufacturing a thin film transistor capable of inhibiting the characteristics variation of the thin film transistor without deteriorating the characteristics thereof is provided. A crystalline silicon film is formed by indirect heat treatment through a photothermal conversion layer and a buffer layer. By patterning the buffer layer and an insulating film, a channel protective film is selectively formed in a region corresponding to a channel region on the crystalline silicon film. Further, when an n+ silicon film and a metal layer are selectively removed, the channel protective film functions as an etching stopper. When the crystalline silicon film is formed, heat is uniformly supplied. Further, in etching, the channel region of the crystalline silicon film is protected.

Abstract: The present invention relates to a compound defined by a formula herein, a composition and/or a method relating to one or more of the defined compounds.

Abstract: A method of manufacturing a semiconductor device includes the steps of: modifying a semiconductor film by applying a laser beam; and forming a semiconductor device on the modified semiconductor film. In the step of modifying the semiconductor film, the laser beam and the substrate are moved relative to each other in a first direction and a second direction which is opposite to the first direction, a change in an optical characteristic between an area irradiated with the laser beam and an area which is not irradiated with the laser beam in the substrate or an optical characteristic of the irradiated area is measured in each of the first and second directions, and irradiation power of the laser beam is modulated so that the difference between a measurement result in the first direction and a measurement result in the second direction lies in a predetermined range.

Abstract: A crosslinked carbon nanotube, in which multiple carbon nanotubes therein are crosslinked with each other at multiple cross-linking sites via a connecting group containing a ?-electron conjugation system, and the bond between the connecting group and the carbon nanotube is not an ester or amido bond.

Abstract: Disclosed is a surface-modified carbon material obtained by subjecting a carbon material to react with a benzyne. The surface-modified carbon material has high heat stability.

Abstract: A near infrared fluorescent contrast agent comprising a compound having three or more sulfonic acid groups in a molecule, and a method of fluorescence imaging comprising introducing the near infrared fluorescent contrast agent of the present invention into a living body, exposing the body to an excitation light, and detecting near infrared fluorescence from the contrast agent. The near infrared fluorescent contrast agent of the present invention is excited by an excitation light and emits near infrared fluorescence. This infrared fluorescence is superior in transmission through biological tissues. Thus, detection of lesions in the deep part of a living body has been made possible. In addition, the inventive contrast agent is superior in water solubility and low toxic, and therefore, it can be used safely.

Abstract: A stilbene derivative compound having a specific substituent at the specific position thereof to exert good compatibility with a binder resin and to tend to be uniformly dispersed in a photoconductive layer so as to allow prolonged specified sensitive property, a process for the production thereof, and an electrophotographic photoconductor containing the stilbene derivative compound are provided. For preparing a stilbene derivative compound represented by the general formula (1), a specified formylated triphenylamine derivative compound and a specified diphosphate ester derivative compound are allowed to be reacted with each other in the presence of a catalyst.

Abstract: A photosensitive composition containing a binder polymer, a polymerizable compound, and a compound of formula (I): D-L-A ??formula (I) wherein D represents a light-absorptive portion composed of a group to give a two-photon absorption compound which is 100 GM or larger of two-photon absorption cross-section in a wavelength longer than 400 nm; A represents an active portion capable of interacting with the light-absorptive portion D that is excited by light, to generate free radicals; and L represents a linking group which links the light-absorptive portion D with the active portion A.

Abstract: A recording medium comprises a substrate and a recording layer overlaid on the substrate. The recording layer comprises a material, which has properties such that, when recording light having a predetermined wavelength ?1 is irradiated to the material, the material is capable of being caused to change into a fluorescent material and such that, when excitation light having a wavelength ?2 is then irradiated to the thus formed fluorescent material, the fluorescent material is capable of being caused to produce fluorescence. The wavelength ?1 of the recording light and the wavelength ?2 of the excitation light may be identical or different. The substrate may be constituted of a material having properties such that, when the excitation light is irradiated to the material, the material does not produce fluorescence having a wavelength identical with the wavelength of the fluorescence produced by the fluorescent material.

Abstract: A method of manufacturing a thin film transistor capable of inhibiting the characteristics variation of the thin film transistor without deteriorating the characteristics thereof is provided. A crystalline silicon film is formed by indirect heat treatment through a photothermal conversion layer and a buffer layer. By patterning the buffer layer and an insulating film, a channel protective film is selectively formed in a region corresponding to a channel region on the crystalline silicon film. Further, when an n+ silicon film and a metal layer are selectively removed, the channel protective film functions as an etching stopper. When the crystalline silicon film is formed, heat is uniformly supplied. Further, in etching, the channel region of the crystalline silicon film is protected.