Abstract: A liquid composition contains an inorganic oxide and an organic solvent represented by the following Chemical Formula 1, where R1 and R2 each, independently represent straight chain alkyl groups or straight chain alkoxy groups, wherein the organic solvent has a topological index chai4v of 0.9 or greater.

Abstract: A liquid composition containing a solvent, an inorganic solid electrolyte, and a dispersant is provided. The dispersant is soluble in the solvent. A 10% volume fraction-component's particle diameter (D10), a 50% volume fraction-component's particle diameter (D50), a 90% volume fraction-component's particle diameter (D90), and a mode diameter (Dm) of solids contained in the liquid composition satisfy D90/D10>10, D50<1 ?m, and Dm<2 ?m, where D10, D50, D90, and Dm are measured by a laser diffraction method.

Abstract: To provide a non-aqueous electrolyte electricity-storage element including a positive electrode including a positive-electrode active material capable of inserting and releasing anions, a negative electrode including a negative-electrode active material capable of inserting and releasing cations, and a non-aqueous electrolyte, wherein the positive-electrode active material is porous carbon having pores having a three-dimensional network structure, and wherein a changing rate of a cross-sectional thickness of a positive electrode film including the positive-electrode active material defined by Formula (1) below is less than 45%.

Abstract: A non-aqueous electrolyte electricity-storage element which includes a positive electrode including a positive-electrode active material capable of inserting and releasing anions, a negative electrode including a negative-electrode active material, and a non-aqueous electrolyte, wherein the positive-electrode active material is formed of a carbonaceous material, and a surface of the carbonaceous material includes fluorine.

Abstract: To provide a non-aqueous electrolyte electricity-storage element including a positive electrode including a positive-electrode active material capable of inserting and releasing anions, a negative electrode including a negative-electrode active material capable of inserting and releasing cations, and a non-aqueous electrolyte, wherein the positive-electrode active material is porous carbon having pores having a three-dimensional network structure, and wherein a changing rate of a cross-sectional thickness of a positive electrode film including the positive-electrode active material defined by Formula (1) below is less than 45%.

Abstract: To provide a non-aqueous electrolyte electricity-storage element including a positive electrode including a positive-electrode active material capable of inserting and releasing anions, a negative electrode including a negative-electrode active material capable of inserting and releasing cations, and a non-aqueous electrolyte, wherein the positive-electrode active material is porous carbon having pores having a three-dimensional network structure, and wherein a changing rate of a cross-sectional thickness of a positive electrode film including the positive-electrode active material defined by Formula (1) below is less than 45%.

Abstract: An active material is provided. The active material comprises a porous carbon having a plurality of pores forming a three-dimensional network structure and a conductive polymer, and at least a part of the plurality of pores contains the conductive polymer.

Abstract: To provide a non-aqueous electrolyte storage element including a positive electrode including a positive-electrode active material capable of inserting and eliminating anions, a negative electrode including a negative-electrode active material, and a non-aqueous electrolyte, wherein the positive-electrode active material includes a carbon material which has a plurality of pores constituting a three-dimensional network structure and has a solid electrolyte interface (SEI) material on a surface of the carbon material.

Abstract: A non-aqueous electrolyte storage element has a positive electrode including a positive electrode active material allowing intercalation or deintercalation of anions, a negative electrode including a negative electrode active material, a non-aqueous electrolytic solution, and a separator disposed between the positive electrode and the negative electrode to hold the non-aqueous electrolytic solution. The positive electrode active material is carbon having pores of a three-dimensional network structure, and the carbon contains a carbonate salt. The carbon may contain the carbonate salt at least inside the three-dimensional network structure. The carbonate salt may be mixed into the carbon. At least a portion of a surface of the carbon may be covered with the carbonate salt.

Abstract: Provided is a non-aqueous electrolyte electricity-storage element, which includes: a positive electrode including a positive-electrode active material capable of inserting and eliminating anions; a negative electrode including a negative-electrode active material; a non-aqueous electrolyte; and a separator that is disposed between the positive electrode and the negative electrode and retains the non-aqueous electrolyte, wherein the non-aqueous electrolyte includes a dinitrile compound, and an amount of the dinitrile compound is 33% by mass or less relative to the non-aqueous electrolyte.

Abstract: A nonaqueous electrolytic solution storage element is provided. The nonaqueous electrolytic solution storage element includes a cathode containing a cathode active material, an anode containing an anode active material to which sodium ion is insertable and from which the sodium ion is separable, and a nonaqueous electrolytic solution. The anode active material comprises a porous carbon having a plurality of pores forming a three-dimensional network structure, and the porous carbon has crystallinity.

Abstract: To provide a non-aqueous electrolyte storage element including a positive electrode including a positive-electrode active material capable of inserting and eliminating anions, a negative electrode including a negative-electrode active material, and a non-aqueous electrolyte, wherein the positive-electrode active material includes a carbon material which has a plurality of pores constituting a three-dimensional network structure and has a solid electrolyte interface (SEI) material on a surface of the carbon material.

Abstract: To provide a non-aqueous electrolyte electricity-storage element including a positive electrode including a positive-electrode active material capable of inserting and releasing anions, a negative electrode including a negative-electrode active material capable of inserting and releasing cations, and a non-aqueous electrolyte, wherein the positive-electrode active material is porous carbon having pores having a three-dimensional network structure, and wherein a changing rate of a cross-sectional thickness of a positive electrode film including the positive-electrode active material defined by Formula (1) below is less than 45%.

Abstract: A non-aqueous electrolyte electricity-storage element which includes a positive electrode including a positive-electrode active material capable of inserting and releasing anions, a negative electrode including a negative-electrode active material, and a non-aqueous electrolyte, wherein the positive-electrode active material is formed of a carbonaceous material, and a surface of the carbonaceous material includes fluorine.

Abstract: A device of an example of the invention comprises a first section of which performs inverse fast Fourier transform for a channel estimation value obtained by channel estimation to obtain a channel impulse response, a second section which selects paths that belong to a group having a large element based on elements of paths for the channel impulse response, a third section which calculates autocorrelation values by time averaging for each of the paths selected by the second section, a fourth section which obtains an ensemble average value of the autocorrelation values by time averaging obtained by the third section, and a fifth section which obtains a Doppler frequency associated with the ensemble average value based on a characteristic of a relationship between an autocorrelation value and a Doppler frequency and the ensemble average value.

Abstract: A method for manufacturing a semiconductor device formed by fractionization and division after a plurality of semiconductor elements are formed over a semiconductor substrate, includes forming a first resist portion over the semiconductor substrate prior to its fractionization. Trenches are formed in areas for dicing the semiconductor substrate. A second resin portion different in composition from the first resin portion is formed in each of the trenches. The semiconductor substrate is diced with respect to the second resin portion with widths each narrower than the trench thereby to bring the semiconductor device into fractionization and division.

Abstract: The semiconductor device comprises a first area and a second area positioned adjacent to the outside of the first area, the semiconductor substrate having a main surface and side surfaces and disposed in such a manner that the main surface is positioned in the first area and each of the side surfaces is positioned at a boundary between the first area and the second area, a plurality of pads formed over the main surface of the semiconductor substrate and a plurality of external connecting terminals formed thereon, which are respectively electrically connected to the pads, a first resin portion which is formed over the main surface of the semiconductor substrate so as to cover the pads and has a main surface and side surfaces, and which is formed in such a manner that the external connecting terminals are exposed from the main surface and each of the side surfaces is positioned at the boundary, and a second resin portion which is positioned in the second area and formed so as to cover the side surfaces of the s

Abstract: A device of an example of the invention comprises a first section which performs IFFT for a channel estimation value obtained by channel estimation to obtain a channel impulse response, a second section which selects paths that belong to a group having a large element based on elements of paths for the channel impulse response, a third section which calculates autocorrelation values by time averaging for each of the paths selected by the second section, a fourth section which obtains an ensemble average value of the autocorrelation values by time averaging obtained by the third section, and a fifth section which obtains a Doppler frequency associated with the ensemble average value based on a characteristic of a relationship between an autocorrelation value and an Doppler frequency and the ensemble average value.

Abstract: The semiconductor device comprises a first area and a second area positioned adjacent to the outside of the first area, the semiconductor substrate having a main surface and side surfaces and disposed in such a manner that the main surface is positioned in the first area and each of the side surfaces is positioned at a boundary between the first area and the second area, a plurality of pads formed over the main surface of the semiconductor substrate and a plurality of external connecting terminals formed thereon, which are respectively electrically connected to the pads, a first resin portion which is formed over the main surface of the semiconductor substrate so as to cover the pads and has a main surface and side surfaces, and which is formed in such a manner that the external connecting terminals are exposed from the main surface and each of the side surfaces is positioned at the boundary, and a second resin portion which is positioned in the second area and formed so as to cover the side surfaces of the s

Abstract: A method of making a semiconductor device includes the steps of etching, with a resist pattern (3) used as a mask, a contact pattern (4) in at least one interlayer insulation film (2) made on a silicon substrate (1); forming on the contact pattern an insulation film (5) containing silicon as a main component; and oxidizing by heat treatment the insulation film to provide an oxide film (6) including a side wall oxide film on an inside wall of the contact pattern.