Patents by Inventor Yoshiro Nomoto
Yoshiro Nomoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10613253Abstract: A metasurface is capable of modulating input light including a wavelength in a range of 880 nm to 40 ?m. The metasurface includes: a GaAs substrate including a light input surface into which input light is input and a light output surface facing the light input surface; an interlayer having a lower refractive index than GaAs and disposed on the light output surface side of the GaAs substrate; and a plurality of V-shaped antenna elements disposed on a side of the interlayer which is opposite to the GaAs substrate side and including a first arm and a second arm continuous with one end of the first arm.Type: GrantFiled: September 12, 2017Date of Patent: April 7, 2020Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yoshiro Nomoto, Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Soh Uenoyama
-
Publication number: 20200106240Abstract: The present embodiment relates to a semiconductor light-emitting element or the like including a structure for suppressing deterioration in the quality of an optical image caused by an electrode blocking a part of light outputted from a phase modulation layer. The semiconductor light-emitting element includes a phase modulation layer having a basic layer and a plurality of modified refractive index regions, and the phase modulation layer includes a first region at least partially overlapping the electrode along a lamination direction and a second region other than the first region. Among the plurality of modified refractive index regions, only one or more modified refractive index regions in the second region are disposed so as to contribute to formation of an optical image.Type: ApplicationFiled: December 2, 2019Publication date: April 2, 2020Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Yuu TAKIGUCHI, Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Takahiro SUGIYAMA, Yoshiro NOMOTO, Soh UENOYAMA
-
Publication number: 20190356113Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.Type: ApplicationFiled: June 25, 2019Publication date: November 21, 2019Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Yoshitaka KUROSAKA, Yuu Takiguchi, Takahiro Sugiyama, Kazuyoshi Hirose, Yoshiro Nomoto
-
Publication number: 20190312412Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.Type: ApplicationFiled: June 7, 2019Publication date: October 10, 2019Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Yoshitaka KUROSAKA, Kazuyoshi HIROSE, Takahiro SUGIYAMA, Yuu TAKIGUCHI, Yoshiro NOMOTO
-
Publication number: 20190312410Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.Type: ApplicationFiled: June 5, 2019Publication date: October 10, 2019Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Takahiro SUGIYAMA, Yuu TAKIGUCHI, Yoshitaka KUROSAKA, Kazuyoshi HIROSE, Yoshiro NOMOTO, Soh UENOYAMA
-
Publication number: 20190288483Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.Type: ApplicationFiled: June 6, 2019Publication date: September 19, 2019Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Takahiro SUGIYAMA, Yuu TAKIGUCHI, Yoshitaka KUROSAKA, Kazuyoshi HIROSE, Yoshiro NOMOTO, Soh UENOYAMA
-
Patent number: 10389088Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.Type: GrantFiled: March 11, 2016Date of Patent: August 20, 2019Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yoshitaka Kurosaka, Yuu Takiguchi, Takahiro Sugiyama, Kazuyoshi Hirose, Yoshiro Nomoto
-
Publication number: 20190252856Abstract: The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.Type: ApplicationFiled: March 5, 2019Publication date: August 15, 2019Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Takahiro SUGIYAMA, Yuu TAKIGUCHI, Yoshiro NOMOTO
-
Publication number: 20190181613Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.Type: ApplicationFiled: August 10, 2017Publication date: June 13, 2019Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Yoshitaka KUROSAKA, Kazuyoshi HIROSE, Takahiro SUGIYAMA, Yuu TAKIGUCHI, Yoshiro NOMOTO
-
Patent number: 10161857Abstract: A metamaterial optical member 100 includes a light collecting optical member 1 having a light-entering surface IN1 and a light-exiting surface OUT1 and having a light collecting function and an antireflection film 2 disposed in the light-exiting surface OUT1 of the light collecting optical member 1. The antireflection film 2 has a first metamaterial structure in which a refractive index is gradually reduced in the light travelling direction. The metamaterial optical member 100 includes the antireflection film 2 having the metamaterial structure, thereby externally extracting light.Type: GrantFiled: April 3, 2015Date of Patent: December 25, 2018Assignee: HAMAMATSU PHOTONICS K.K.Inventor: Yoshiro Nomoto
-
Patent number: 10090636Abstract: Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.Type: GrantFiled: January 7, 2016Date of Patent: October 2, 2018Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yuu Takiguchi, Kazuyoshi Hirose, Yoshiro Nomoto, Takahiro Sugiyama, Yoshitaka Kurosaka
-
Patent number: 9991669Abstract: The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.Type: GrantFiled: July 21, 2017Date of Patent: June 5, 2018Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Kazuyoshi Hirose, Yoshitaka Kurosaka, Takahiro Sugiyama, Yuu Takiguchi, Yoshiro Nomoto
-
Publication number: 20180109075Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.Type: ApplicationFiled: March 11, 2016Publication date: April 19, 2018Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Yoshitaka KUROSAKA, Yuu TAKIGUCHI, Takahiro SUGIYAMA, Kazuyoshi HIROSE, Yoshiro NOMOTO
-
Patent number: 9948060Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM optically coupled to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, a diffraction grating layer 6 optically coupled to the active layer 4, and a drive electrode E3 that is disposed between the cladding layer 2 and the spatial light modulator SLM and supplies an electric current to the active layer 4, and the drive electrode E3 is positioned within an XY plane and has a plurality of openings as viewed from a Z-axis direction and has a non-periodic structure.Type: GrantFiled: December 24, 2015Date of Patent: April 17, 2018Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yuu Takiguchi, Kazuyoshi Hirose, Yoshitaka Kurosaka, Takahiro Sugiyama, Yoshiro Nomoto
-
Publication number: 20180074227Abstract: A metasurface is capable of modulating input light including a wavelength in a range of 880 nm to 40 ?m. The metasurface includes: a GaAs substrate including a light input surface into which input light is input and a light output surface facing the light input surface; an interlayer having a lower refractive index than GaAs and disposed on the light output surface side of the GaAs substrate; and a plurality of V-shaped antenna elements disposed on a side of the interlayer which is opposite to the GaAs substrate side and including a first arm and a second arm continuous with one end of the first arm.Type: ApplicationFiled: September 12, 2017Publication date: March 15, 2018Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Yoshiro NOMOTO, Yoshitaka KUROSAKA, Kazuyoshi HIROSE, Takahiro SUGIYAMA, Soh UENOYAMA
-
Publication number: 20180074226Abstract: A metasurface includes a substrate including a light input surface into which input light is input and a light output surface facing the light input surface, and a plurality of V-shaped antenna elements disposed on the light output surface of the substrate and including a first arm and a second arm continuing on one end of the first arm. The each of the V-shaped antenna elements has a thickness in a range of 100 nm to 400 nm.Type: ApplicationFiled: September 12, 2017Publication date: March 15, 2018Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Yoshiro NOMOTO, Yoshitaka KUROSAKA, Kazuyoshi HIROSE, Takahiro SUGIYAMA, Soh UENOYAMA
-
Publication number: 20180026419Abstract: The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.Type: ApplicationFiled: July 21, 2017Publication date: January 25, 2018Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Takahiro SUGIYAMA, Yuu TAKIGUCHI, Yoshiro NOMOTO
-
Publication number: 20180006426Abstract: Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.Type: ApplicationFiled: January 7, 2016Publication date: January 4, 2018Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Yuu TAKIGUCHI, Kazuyoshi HIROSE, Yoshiro NOMOTO, Takahiro SUGIYAMA, Yoshitaka KUROSAKA
-
Publication number: 20170338624Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM optically coupled to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, a diffraction grating layer 6 optically coupled to the active layer 4, and a drive electrode E3 that is disposed between the cladding layer 2 and the spatial light modulator SLM and supplies an electric current to the active layer 4, and the drive electrode E3 is positioned within an XY plane and has a plurality of openings as viewed from a Z-axis direction and has a non-periodic structure.Type: ApplicationFiled: December 24, 2015Publication date: November 23, 2017Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Yuu TAKIGUCHI, Kazuyoshi HIROSE, Yoshitaka KUROSAKA, Takahiro SUGIYAMA, Yoshiro NOMOTO
-
Patent number: 9793681Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM which is optically connected to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, and a diffraction grating layer 6 which is optically connected to the active layer 4. The spatial light modulator SLM includes a common electrode 25, a plurality of pixel electrodes 21, and a liquid crystal layer LC arranged between the common electrode 25 and the pixel electrodes 21. A laser beam output in a thickness direction of the diffraction grating layer 6 is modulated and reflected by the spatial light modulator SLM and is output to the outside.Type: GrantFiled: July 2, 2014Date of Patent: October 17, 2017Assignee: HAMAMATSU PHOTONICS K.K.Inventors: Yuu Takiguchi, Yoshiro Nomoto