Patents by Inventor Yoshishige OKUNO

Yoshishige OKUNO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210357546
    Abstract: Efficiency of a material search is improved. An apparatus according to one embodiment of the present invention includes a composition obtaining unit configured to obtain a candidate composition, a thermodynamic calculation unit configured to perform thermodynamic calculation on the candidate composition, a manufacturing determining unit configured to determine whether the candidate composition is a manufacturable material based on a correspondence relation between a result of the thermodynamic calculation performed on a predetermined composition and manufacturability indicating whether a material having the predetermined composition is manufacturable, and an output unit configured to output a composition that is determined to be the manufacturable material.
    Type: Application
    Filed: October 29, 2019
    Publication date: November 18, 2021
    Inventors: Katsuki OKUNO, Yoshishige OKUNO
  • Publication number: 20210292462
    Abstract: A polyisocyanurate raw material composition containing a polyfunctional isocyanate, a compound (I) represented by general formula (I) shown below, and an epoxy compound. In general formula (I), each of R1 to R5 represents a hydrogen atom, an alkoxy group of 1 to 10 carbon atoms, an alkyl group of 2 to 10 carbon atoms (or an alkyl group of 1 to 10 carbon atoms in the case of R3 to R5), an aryl group of 6 to 12 carbon atoms, an amino group, a monoalkylamino group of 1 to 10 carbon atoms, a dialkylamino group of 2 to 20 carbon atoms, a carboxy group, a cyano group, a fluoroalkyl group of 1 to 10 carbon atoms, or a halogen atom (provide that R1 and R2 are not both hydrogen atoms).
    Type: Application
    Filed: July 11, 2019
    Publication date: September 23, 2021
    Applicant: SHOWA DENKO K.K.
    Inventors: Hiroki KURAMOTO, Kenichi NAKANISHI, Shohei NISHIZAWA, Yoshishige OKUNO
  • Patent number: 11126695
    Abstract: A polymer design device according to an embodiment of the present disclosure receives a requirement for a target physical property of a desired polymer, and acquires structural information of polymers. For each polymer corresponding to the acquired structural information, the polymer design device estimates physical property information of the polymer including a mean value and a standard deviation, based on the structural information of the polymer and a regression model, and calculates a score of the polymer based on the requirement for the target physical property and based on the mean value and the standard deviation. From among the acquired structural information of the polymers, the polymer design device selects at least one polymer as the desired polymer, based on the score of each of the polymers, and outputs information of the selected at least one polymer.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: September 21, 2021
    Assignee: SHOWA DENKO K.K.
    Inventors: Takuya Minami, Yoshishige Okuno, Katsumi Murofushi, Toshio Fujita
  • Patent number: 10988857
    Abstract: A SiC single crystal growth apparatus of an embodiment includes a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material; a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member; and a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member.
    Type: Grant
    Filed: April 19, 2019
    Date of Patent: April 27, 2021
    Assignee: SHOWA DENKO K.K.
    Inventors: Rimpei Kindaichi, Yoshishige Okuno, Tomohiro Shonai
  • Patent number: 10975227
    Abstract: A curing accelerator can exhibit good curing acceleration performance and is excellent in storage stability, while maintaining sufficient pot life in a curing reaction of radical-polymerizable resins, and a radical-polymerizable resin composition uses the curing accelerator. The curing accelerator for radical-polymerizable resins includes a metal-containing compound (A), a thiol compound (B) and an aprotic solvent (C) having a dielectric constant of 10 or less, wherein the metal-containing compound (A) is one or more compounds selected from a metal soap (A1) and a ?-diketone skeleton-having metal complex (A2), the thiol compound (B) is one or more compounds selected from a mono-functional primary thiol compound (B1), a secondary thiol compound (B2) and a tertiary thiol compound (B3), and the content of the aprotic solvent (C) is 10 to 1,000 parts by mass relative to 100 parts by mass of the total of the metal-containing compound (A) and the thiol compound (B).
    Type: Grant
    Filed: September 4, 2017
    Date of Patent: April 13, 2021
    Assignee: SHOWA DENKO K.K.
    Inventors: Yoichiro Sakaguchi, Takuya Minami, Yoshishige Okuno, Atsushi Umino, Yoshitaka Ishibashi
  • Publication number: 20210035702
    Abstract: A silver nanowire ink capable of obtaining a transparent electroconductive pattern having a preferable conductivity and a superior migration resistance, and capable of being produced by smaller steps, as well as a transparent electroconductive film using the silver nanowire ink. A silver nanowire ink including a low molecular weight urea compound having a urea bond in a molecule and having a molecular weight of 60 to 250, a silver nanowire, a binder resin, and a dispersion medium, and a transparent electroconductive film obtained by coating the silver nanowire ink on a transparent substrate and drying the same.
    Type: Application
    Filed: March 26, 2019
    Publication date: February 4, 2021
    Applicant: SHOWA DENKO K. K.
    Inventors: Shuhei YONEDA, Suguru SAKAGUCHI, Takashi SATO, Yoshishige OKUNO
  • Publication number: 20200395102
    Abstract: A polymer physical property prediction device includes a processor, and a memory storing program instructions that cause the processor to read a structural unit from a storage unit and use the structural unit to calculate numbers each indicating how many substructures are in a polymer, the polymer being formed of repetition of the structural unit, calculate a number indicating how many atoms are in the structural unit, calculate number densities of the substructures from the numbers of substructures and the number of atoms in the structural unit, construct a regression model that predicts a physical property value by using an experimental value of a physical property of the polymer and the number densities of the substructures, input a polymer structure of which the physical property value is to be predicted, and predict the physical property value corresponding to the input polymer structure by using the regression model.
    Type: Application
    Filed: September 1, 2020
    Publication date: December 17, 2020
    Inventors: Takuya MINAMI, Yoshishige OKUNO
  • Patent number: 10801128
    Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: October 13, 2020
    Assignee: SHOWA DENKO K.K.
    Inventors: Yasunori Motoyama, Yoshishige Okuno, Yoshikazu Umeta, Keisuke Fukada
  • Publication number: 20200257855
    Abstract: A cause-effect sentence analysis device including: a cause-effect sentence extraction unit configured to extract a cause-effect sentence including a cause expression and an effect expression from a text; an acquisition unit configured to acquire information indicating a reference expression for analyzing the degree of similarity; a similarity degree analysis unit, for a cause-effect sentence extracted by the cause-effect sentence extraction unit, configured to calculate a cause similarity degree, namely, the degree of similarity between the reference expression and the cause expression included in the cause-effect sentence, and an effect similarity degree, namely, the degree of similarity between the reference expression and the effect expression; and a desired cause-effect sentence extraction unit for extracting a cause-effect sentence in which one of the cause expression and the effect expression included in the cause-effect sentence is similar to the reference expression and the other is not similar to the
    Type: Application
    Filed: October 30, 2018
    Publication date: August 13, 2020
    Applicants: SHOWA DENKO K.K., School Juridical Person Seikei Gakuen
    Inventors: Takuya MINAMI, Yoshishige OKUNO, Chinatsu TANABE, Yusuke YAMAZAKI, Hiroyuki SAKAI, Hiroki SAKAJI
  • Publication number: 20200199745
    Abstract: Provided is a SiC chemical vapor deposition apparatus including: a furnace body inside of which a growth space is formed; and a placement table which is positioned in the growth space and has a placement surface on which a SiC wafer is placed, in which the furnace body comprises a first hole which is positioned on an upper portion which faces the placement surface and through which a raw material gas is introduced into the growth space, a second hole which is positioned on a side wall of the furnace body and through which a purge gas flows into the growth space, a third hole which is positioned on the side wall of the furnace body at a lower position than the second hole and discharges the gases in the growth space, and a protrusion which is protrudes towards the growth space from a lower end of the second hole to adjust a flow of the raw material gas.
    Type: Application
    Filed: December 17, 2019
    Publication date: June 25, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Yoshikazu UMETA, Yoshishige OKUNO, Rimpei KINDAICHI
  • Publication number: 20200190665
    Abstract: A SiC chemical vapor deposition device according to the present embodiment includes a placement table on which a SiC wafer is placed; and a furnace body that covers the placement table, in which the furnace body has a side wall and a ceiling that has a gas supply port for supplying raw material gas to the inside of the furnace body, covers a periphery of the gas supply port, and is positioned above the placement table, and emissivity of an inner surface of the ceiling is lower than that of an inner surface of the side wall.
    Type: Application
    Filed: December 11, 2019
    Publication date: June 18, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Yoshikazu UMETA, Yoshishige OKUNO, Rimpei KINDAICHI
  • Publication number: 20200181797
    Abstract: A crystal growing apparatus includes: a crucible which includes a main body portion, and a first portion having a radiation rate different from that of the main body portion, and is capable of controlling a temperature of a specific region inside during heating to a higher or lower temperature than that of the other regions; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the first portion is at a position where the crucible and a line segment connecting a heating center of the heating unit and the specific region intersect with each other.
    Type: Application
    Filed: December 4, 2019
    Publication date: June 11, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Rimpei KINDAICHI, Yoshishige OKUNO, Tomohiro SHONAI
  • Publication number: 20200181365
    Abstract: A curing accelerator can exhibit good curing acceleration performance and is excellent in storage stability, while maintaining sufficient pot life in a curing reaction of radical-polymerizable resins, and a radical-polymerizable resin composition uses the curing accelerator. The curing accelerator for radical-polymerizable resins includes a metal-containing compound (A), a thiol compound (B) and an aprotic solvent (C) having a dielectric constant of 10 or less, wherein the metal-containing compound (A) is one or more compounds selected from a metal soap (A1) and a ?-diketone skeleton-having metal complex (A2), the thiol compound (B) is one or more compounds selected from a mono-functional primary thiol compound (B1), a secondary thiol compound (B2) and a tertiary thiol compound (B3), and the content of the aprotic solvent (C) is 10 to 1,000 parts by mass relative to 100 parts by mass of the total of the metal-containing compound (A) and the thiol compound (B).
    Type: Application
    Filed: September 4, 2017
    Publication date: June 11, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Yoichiro SAKAGUCHI, Takuya MINAMI, Yoshishige OKUNO, Atsushi UMINO, Yoshitaka ISHIBASHI
  • Publication number: 20200181796
    Abstract: A crystal growing apparatus includes: a crucible including a main body portion and a low radiation portion having a radiation rate lower than that of the main body portion; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the low radiation portion is provided on an outer surface of a first point which is a heating center, in a case where the crucible does not include the low radiation portion.
    Type: Application
    Filed: December 4, 2019
    Publication date: June 11, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Rimpei KINDAICHI, Yoshishige OKUNO, Tomohiro SHONAI
  • Publication number: 20200147590
    Abstract: An oxygen reduction catalyst containing as constituent elements cobalt, sulfur, and a transition metal element M being at least one element selected from chromium and molybdenum, the oxygen reduction catalyst being ascertained to have a crystal structure of a cobalt disulfide cubic crystal in powder X-ray diffraction measurement, and having a molar ratio of the transition metal element M to cobalt (M/cobalt) of 5/95 to 15/85. Also disclosed is an electrode having a catalyst layer containing the oxygen reduction catalyst, a membrane electrode assembly including a polymer electrolyte membrane wherein the electrode serves as a cathode and/or an anode, and a fuel cell including the membrane electrode assembly.
    Type: Application
    Filed: December 27, 2017
    Publication date: May 14, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Takuya IMAI, Kazuo FURUYA, Kunchan LEE, Suguru SAKAGUCHI, Yoshishige OKUNO
  • Publication number: 20200142951
    Abstract: A polymer design device according to an embodiment of the present disclosure receives a requirement for a target physical property of a desired polymer, and acquires structural information of polymers. For each polymer corresponding to the acquired structural information, the polymer design device estimates physical property information of the polymer including a mean value and a standard deviation, based on the structural information of the polymer and a regression model, and calculates a score of the polymer based on the requirement for the target physical property and based on the mean value and the standard deviation. From among the acquired structural information of the polymers, the polymer design device selects at least one polymer as the desired polymer, based on the score of each of the polymers, and outputs information of the selected at least one polymer.
    Type: Application
    Filed: October 29, 2019
    Publication date: May 7, 2020
    Inventors: Takuya MINAMI, Yoshishige OKUNO, Katsumi MUROFUSHI, Toshio FUJITA
  • Patent number: 10573902
    Abstract: The present invention relates to an oxygen reduction catalyst, an electrode, a membrane electrode assembly, and a fuel cell, and the oxygen reduction catalyst is an oxygen reduction catalyst containing substituted CoS2, in which the substituted CoS2 has a cubic crystal structure, the oxygen reduction catalyst contains the substituted CoS2 within 0.83 nm from the surface thereof, and the substituted CoS2 has at least one substitutional atom selected from the group consisting of Cr, Mo, Mn, Tc, Re, Rh, Cu, and Ag in some of Co atom sites.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: February 25, 2020
    Assignee: SHOWA DENKO K.K.
    Inventors: Suguru Sakaguchi, Yoshishige Okuno, Takuya Imai, Kunchan Lee
  • Publication number: 20200010619
    Abstract: A fluorine-containing ether compound of the present invention is represented by the following General Formula (1). (In the General Formula (1), X is a trivalent atom or a trivalent atom group, A is a linking group including at least one polar group, B is a linking group having a perfluoropolyether chain, and D is a polar group or a substituent having a polar group at the end.) [Chem.
    Type: Application
    Filed: February 6, 2018
    Publication date: January 9, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Takuya MINAMI, Yoshishige OKUNO, Yuta YAMAGUCHI, Ryuuta MIYASAKA, Naoya FUKUMOTO, Hiroko HATTORI, Hiroyuki TOMITA, Michio SERI, Naoko ITO, Ichiro OTA, Katsumi MUROFUSHI
  • Publication number: 20190386321
    Abstract: The present invention relates to an oxygen reduction catalyst, an electrode, a membrane electrode assembly, and a fuel cell, and the oxygen reduction catalyst is an oxygen reduction catalyst containing substituted CoS2, in which the substituted CoS2 has a cubic crystal structure, the oxygen reduction catalyst contains the substituted CoS2 within 0.83 nm from the surface thereof, and the substituted CoS2 has at least one substitutional atom selected from the group consisting of Cr, Mo, Mn, Tc, Re, Rh, Cu, and Ag in some of Co atom sites.
    Type: Application
    Filed: December 27, 2017
    Publication date: December 19, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Suguru SAKAGUCHI, Yoshishige OKUNO, Takuya IMAI, Kunchan LEE
  • Publication number: 20190330761
    Abstract: A SiC single crystal growth apparatus of an embodiment includes a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material; a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member; and a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member.
    Type: Application
    Filed: April 19, 2019
    Publication date: October 31, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Rimpei KINDAICHI, Yoshishige OKUNO, Tomohiro SHONAI