Abstract: A distance sensor according to an embodiment of the present disclosure includes: a controller that instructs a light source section to emit a first light pulse; a light receiver that includes a photodiode which causes a signal charge to be generated by receiving a first reflected light pulse corresponding to the first light pulse, and generates a light reception signal by storing the signal charge and converting the signal charge into a voltage; a signal change detector that performs a first detection operation of detecting a first signal change corresponding to the first reflected light pulse in the light reception signal; and a time measurement section that performs, on a basis of the first signal change, a first measurement operation of measuring a first time interval from an emission timing of the first light pulse in the light source section to a reception timing of the first reflected light pulse in the light receiver.

Abstract: A distance sensor according to an embodiment of the present disclosure includes: a controller that instructs a light source section to emit a first light pulse; a light receiver that includes a photodiode which causes a signal charge to be generated by receiving a first reflected light pulse corresponding to the first light pulse, and generates a light reception signal by storing the signal charge and converting the signal charge into a voltage; a signal change detector that performs a first detection operation of detecting a first signal change corresponding to the first reflected light pulse in the light reception signal; and a time measurement section that performs, on a basis of the first signal change, a first measurement operation of measuring a first time interval from an emission timing of the first light pulse in the light source section to a reception timing of the first reflected light pulse in the light receiver.

Abstract: An electronic apparatus for detecting distances from the electronic apparatus to external objects is provided, the apparatus comprising a substrate 551, a light receiving sensor of a distance measurement sensor 523 arranged over the substrate 511, one or more light sources 521, 522 arranged over the substrate 511, a first lens 32 arranged over a first light source 522 of the one or more light sources and arranged to direct light emitted by the first light source 522, a second lens 33 arranged over the light receiving sensor and configured to direct light received by the second lens 33 onto the light receiving sensor of the distance measurement sensor 523, and a transparent member 553 arranged between the second lens 33 and the light receiving sensor and configured to transmit the light directed by the second lens 33 onto the light receiving sensor, and reflect light from at least one 521 of the one or more light sources 521, 522 onto the light receiving sensor of the distance measurement sensor 523.

Abstract: According to one embodiment, a photoelectric converting layer, a charge accumulating layer, and a light collecting unit are provided. The photoelectric converting layer is formed at a back surface side of a semiconductor substrate. The charge accumulating layer is formed at a front surface side of the semiconductor substrate, and accumulates charges photoelectric-converted by the photoelectric converting layer. The light collecting unit makes light incident to the back surface side of the semiconductor substrate to be collected on the photoelectric converting layer not to be incident to the charge accumulating layer.

Abstract: According to one embodiment, pixels are divided by a grid set diagonally to a column direction, a green photoelectric conversion film is provided for each of the pixels and arranged to overlap a red photoelectric conversion layer in a depth direction, and a blue photoelectric conversion layer is arranged to be overlapped by the green photoelectric conversion film in a depth direction.

Abstract: According to one embodiment, a solid state image sensor has a photoelectric conversion element array, a light collecting optical element array, wavelength-selective elements and a reflecting unit. Wavelength-selective elements pass light of the color which is to be detected, and reflect other colors. The reflecting unit further reflects the light that has been reflected by the wavelength-selective elements. The cell includes photoelectric conversion elements for three different light colors. A microlens serving as a light collecting optical element is arranged corresponding to the cell. The reflecting unit includes at least a first reflecting surface and a second reflecting surface. The first reflecting surface faces the wavelength-selective elements. In every cell, the second reflecting surface is enclosed between wavelength-selective elements and the first reflecting surface.

Abstract: According to one embodiment, a photoelectric converting layer, a charge accumulating layer, and a light collecting unit are provided. The photoelectric converting layer is formed at a back surface side of a semiconductor substrate. The charge accumulating layer is formed at a front surface side of the semiconductor substrate, and accumulates charges photoelectric-converted by the photoelectric converting layer. The light collecting unit makes light incident to the back surface side of the semiconductor substrate to be collected on the photoelectric converting layer not to be incident to the charge accumulating layer.

Abstract: According to one embodiment, a solid-state imaging device includes a pixel that includes a photoelectric conversion unit accumulating charges obtained by photoelectric conversion, the photoelectric conversion unit being disposed in a semiconductor substrate, a photo gate that controls potential of the photoelectric conversion unit from a plane opposite to a light incident plane of the photoelectric conversion unit, a voltage converting unit that converts signal charges read from the photoelectric conversion unit into a voltage, and a conversion capacity control unit that controls a conversion capacity of the voltage converting unit.

Abstract: According to one embodiment, pixels each in which first and second photoelectric conversion units each of which accumulate charges obtained by photoelectric conversion are arranged to be adjacent in a certain direction are arranged in a row direction and a column direction in a form of a matrix, micro lenses each of which is shared by the first and second photoelectric conversion units, and a read timing is controlled such that a read order of the first photoelectric conversion units and the second photoelectric conversion units in first and second lines of a same color is changed.

Abstract: According to one embodiment, a solid-state imaging device includes a division transistor that divides a voltage converting unit that converts charges generated by a photo diode into a voltage into a first voltage converting unit at a read transistor side and a second voltage converting unit at an amplifying transistor side.

Abstract: Provided is a solid-state imaging device which is capable of improving an image quality by changing a signal charge voltage conversion gain and performing a binning operation. According to one embodiment, a solid-state imaging device includes a pixel array unit including pixels that accumulate charges obtained by photoelectric conversion and are arranged in a row direction and a column direction in a form of a matrix and a switching transistor that is disposed between pixels and capable of changing a signal charge voltage conversion gain of a pixel and performing a binning operation.

Abstract: According to one embodiment, there is a solid-state imaging device including an imaging region. In the imaging region, a plurality of pixels are arranged two-dimensionally. A first inclination angle of a light incidence surface of a dichroic filter in a first pixel among the plurality of pixels relative to a normal to a surface of a semiconductor substrate and a second inclination angle of a light incidence surface of a dichroic filter in a second pixel located farther from a center of the imaging region than the first pixel among the plurality of pixels relative to the normal are decided on so as to make, for light incident on the imaging region, a filter property of the dichroic filter in the first pixel and a filter property of the dichroic filter in the second pixel equalized.

Abstract: According to one embodiment, there is a solid-state imaging device including an imaging region. In the imaging region, a plurality of pixels are arranged two-dimensionally. A first inclination angle of a light incidence surface of a dichroic filter in a first pixel among the plurality of pixels relative to a normal to a surface of a semiconductor substrate and a second inclination angle of a light incidence surface of a dichroic filter in a second pixel located farther from a center of the imaging region than the first pixel among the plurality of pixels relative to the normal are decided on so as to make, for light incident on the imaging region, a filter property of the dichroic filter in the first pixel and a filter property of the dichroic filter in the second pixel equalized.

Abstract: An interlocking source alarm output processing unit outputs alarm indicating an interlocking source and transmits event signal indicating the abnormality to other alarm device. An interlocking destination alarm output processing unit outputs alarm indicating an interlocking destination. An interlocking source alarm stop processing unit transmits the event signal and stops an output of the alarm, upon detecting an operation to an alarm stopping unit while outputting the alarm indicating the interlock source. An interlocking destination alarm stop processing unit stops an output of the alarm indicating the interlocking destination and transmits the event signal for stopping the alarm, when an operation to the alarm stopping unit is detected while outputting the alarm indicating the interlocking destination, while the interlocking destination alarm stop processing unit stops an output of the alarm indicating the interlocking destination, when the event signal from the other alarm device is received.

Abstract: According to one embodiment, a pixel array unit includes a matrix of first and second two-pixel green photoelectric conversion layers that are arranged obliquely with respect to a column direction, a two-pixel blue photoelectric conversion that is arranged adjacent to the first and second green photoelectric conversion layers, and a red photoelectric conversion layer that overlaps the blue photoelectric conversion layer in a depth direction. A green filter that is provided consecutively for two pixels on the first and second green photoelectric conversion layers, and a magenta filter or a white filter is provided consecutively for two pixels on the blue photoelectric conversion layer.

Abstract: According to one embodiment, pixels are divided by a grid set diagonally to a column direction, a green photoelectric conversion film is provided for each of the pixels and arranged to overlap a red photoelectric conversion layer in a depth direction, and a blue photoelectric conversion layer is arranged to be overlapped by the green photoelectric conversion film in a depth direction.

Abstract: According to one embodiment, an image sensor, which is a solid imaging device, includes a photoelectric conversion element array, a condensing optical element array, filter and reflector units, and a reflective unit. The reflective unit further reflects a light reflected by the filter and reflector units. The condensing optical element is arranged so that it contains a first photoelectric conversion element and a portion of a second or a third photoelectric conversion element, which are adjacent to the first photoelectric conversion element. The arrangement of the photoelectric conversion elements may comprise a cell. The reflective unit includes at least a first reflective surface and a second reflective surface. The first reflective surface is opposite to the filter and reflector units. The second reflective surface surrounds the filter and reflector units and the first reflective surface for each cell.

Abstract: According to one embodiment, a solid-state imaging device includes an imaging area, a vertical line drive circuit, and a control circuit. The imaging area is provided with a plurality of unit pixels arrayed like a two-dimensional matrix. Each unit pixel includes a photoelectric conversion element, a read transistor, an amplifier transistor, and a reset transistor. The vertical line drive circuit is configured to select and drive the unit pixels at a unit of row, and to set a signal storage time of the photoelectric conversion element of each driven unit pixel. The control circuit connected to the vertical line drive circuit, is configured to execute a variable control of the signal storage time at a unit of row of the unit pixel.

Abstract: According to one embodiment, provided are a first photoelectric conversion layer provided for a first wavelength band, a second photoelectric conversion layer provided for a second wavelength band, and a color separation element adapted to separate an incident light into a transmission light including the first wavelength band and a reflection light including the second wavelength band, wherein an angle of incidence of the incident light with respect to a reflection surface of the color separation element is set so that a vertically polarized light and a horizontally polarized light are included in the reflection light.

Abstract: According to one embodiment, a solid-state imaging device includes a pixel array unit where pixels are disposed in a matrix and a column amplifying circuit that is disposed at an end of the pixel array unit and amplifies a unit signal of a unit pixel read from each pixel with at least first and second amplification factors, and outputs a plurality of amplified signals.