Abstract: An autofocus system is provided that includes a focus-verification image-recapturing processor and a focus-verification image display processor. The focus-verification image-recapturing processor sets ISO sensitivity to a value lower than a predetermined value and increases an exposure value by adjusting at least one of an aperture value and an exposure time to carry out a focus-verification image-recapturing operation under focusing conditions applied in an antecedent autofocus operation when ISO sensitivity that is set in said auto focus operation exceeds the predetermined value. The focus-verification image display processor displays a focus-verification image obtained by the focus-verification image-recapturing operation when the ISO sensitivity that is set in the auto focus operation exceeds the predetermined value.

Abstract: There is provided a non-linear signal separation method using the non-linear state space projection method capable of separating an effective non-linear signal even if the S/N ratio is low by performing the time domain high speed non-linear state space projection when a signal is a multi-channel signal and has a periodicity. In the non-linear signal separation method using the non-linear state space projection method, an original signal having a complex signal which is a multi-channel and cyclic signal measured from one phenomenon is processed by using the time domain high-speed non-linear state space projection method so as to estimate a noise in the original signal and subtract the estimated noise from the original signal, thereby separating the signal to be measured in the original signal as a non-linear signal even when the S/N ratio is low.

Abstract: A hydrothermal decomposition apparatus 17 as a biomass processing apparatus that decomposes a biomass material 11 into cellulose, hemicellulose, and lignin under a high temperature and high pressure condition to remove a lignin component and a hemicellulose component, a biomass solid discharging unit 18 that discharges a biomass solid (a hot-water insoluble component) 20 processed in the hydrothermal decomposition apparatus 17, and a slurrying vessel 21 communicating with the biomass solid discharging unit 18, into which water 19 is injected and the discharged biomass solid 20 is added to make it slurried are provided to an apparatus body 13, which is a processing vessel having a gas-liquid interface 13a.

Abstract: A biomass hydrothermal decomposition system includes a hydrothermal decomposition unit 17 that transports the fed biomass material from a lower side to an upper side in an apparatus body 13 by screw means 14, feeds pressurized hot water 15 from an upper side different from a feed position of the biomass material 11 into the apparatus body 13, which is pressurized hot water to be discharged, so as to separate a lignin component and a hemicellulose component from the biomass material; a biomass solid discharging unit 18 that discharges a biomass solid 20 from the upper side of the apparatus body 13; and a slurrying vessel 21 communicating with the biomass solid discharging unit 18, into which water 19 is injected and the discharged biomass solid 20 is added to obtain a slurried biomass solid are provided.

Abstract: A plug includes a plug housing and a metal terminal group. The metal terminal group includes a mating electrode group on the first end side thereof and a connection electrode group on the second end side, the mating electrode group including mating electrode sections that are disposed with an insulating resin interposed therebetween and are to be in contact with the contacts of a mating jack, the connection electrode group including connection electrode sections that are disposed with an insulating resin interposed therebetween and are connected to the electrodes of a connection member. The mating electrode sections are disposed coaxially with an axis P of the plug, and at least two of the connection electrode sections are disposed around the axis P so as to surround the axis P side by side.

Abstract: A solenoid valve driving apparatus includes switching means for ON/OFF-controlling application of a direct current voltage to a solenoid of a solenoid valve, and signal outputting means. A first period and a consecutive second period are set as a valve opening operation period of the solenoid valve. When the signal outputting means outputs the PWM signal to the switching means, a duty ratio of the output signal is set to be higher in the second period than in the first period so that a power supplied to the solenoid is larger in the second period than in the first period. As a result, a valve opening operation is performed in the solenoid valve reliably, and loud noise generation during the valve opening operation is suppressed.

Abstract: A plug includes a plug housing and a metal terminal group. The metal terminal group includes a mating electrode group on the first end side thereof and a connection electrode group on the second end side, the mating electrode group including mating electrode sections that are disposed with an insulating resin interposed therebetween and are to be in contact with the contacts of a mating jack, the connection electrode group including connection electrode sections that are disposed with an insulating resin interposed therebetween and are connected to the electrodes of a connection member. The mating electrode sections are disposed coaxially with an axis P of the plug, and at least two of the connection electrode sections are disposed around the axis P so as to surround the axis P side by side.

Abstract: An exemplary semiconductor integrated circuit is formed on a surface of a semiconductor chip includes a circuit region and a dummy region on the surface of the semiconductor chip. The circuit region includes a plurality of circuit patterns, which form circuit elements of the semiconductor integrated circuit, in a plurality of pattern layers. The dummy region includes a plurality of character dummies, which do not contribute to an operation of the semiconductor integrated circuit. The character dummies have a fixed shape and dimension, and arranged in a character pattern layer selected from the plurality of pattern layers with a fixed pitch. The dummy region further includes an identification sign formed by connecting selected ones of the character dummies chosen from the plurality of the character dummies.

Abstract: The present invention provides a production facility of hot dip galvannealed steel plate able to produce hot dip galvannealed steel plate on production conditions optimal at all times despite rapid changes in the steel type, plating deposition, and other external factors, wherein the production facility 1 of hot dip galvannealed steel plate is provided with a soaking/cooling furnace 7 for treating steel plate I running after leaving a rapid heating furnace 6 by at least one of soaking and cooling. Further, the soaking/cooling furnace 7 is configured to enable a change of the ratio in the furnace of the soaking region 15 for soaking steel plate I by soaking means 21 at a soaking temperature of 500° C. to 650° C. and the cooling region 16 for cooling the steel plate I by spray nozzles 22 by a 5° C./sec or more average cooling rate.

Abstract: Disclosed are a fetus electrocardiogram signal measuring method and its device that are capable of measuring the electrocardiogram signals of a fetus even during fetus movements and even at a gestational age during which the measurement current is weak, without the need for reattaching the electrodes and providing any shield room, even if the mother is a hospitalized or ambulant pregnant woman. The fetus electrocardiogram signal measuring device includes (1) high input impedance electrodes, (2) region-variable ground electrodes, and (3) a differential amplifier circuit and an optimization computing section.

Abstract: A semiconductor integrated circuit having a multilayer wiring structure is provided which includes: a top metal wiring layer (MTOP) including a plurality of top layer power supply wirings and a next-to-top metal wiring layer (MTOP-1) directly below the top metal wiring layer MTOP including a plurality of next-to-top layer power supply wirings. Each of the top layer and the next-to-top layer power supply wirings also includes first potential wirings for supplying a first potential to the circuit elements and second potential wirings for supplying a second potential to the circuit elements. The top layer power supply wirings and the next-to-top layer power supply wirings cross each other and have a top layer insulating film disposed between them. First and second contacts are provided in the insulating film for connecting the first potential wirings and second potential wirings in the top and the next-to-top metal wiring layers with each other.

Abstract: There is provided a non-linear signal separation method using the non-linear state space projection method capable of separating an effective non-linear signal even if the S/N ratio is low by performing the time domain high speed non-linear state space projection when a signal is a multi-channel signal and has a periodicity. In the non-linear signal separation method using the non-linear state space projection method, an original signal having a complex signal which is a multi-channel and cyclic signal measured from one phenomenon is processed by using the time domain high-speed non-linear state space projection method so as to estimate a noise in the original signal and subtract the estimated noise from the original signal, thereby separating the signal to be measured in the original signal as a non-linear signal even when the S/N ratio is low.

Abstract: An exemplary semiconductor integrated circuit is formed on a surface of a semiconductor chip includes a circuit region and a dummy region on the surface of the semiconductor chip. The circuit region includes a plurality of circuit patterns, which form circuit elements of the semiconductor integrated circuit, in a plurality of pattern layers. The dummy region includes a plurality of character dummies, which do not contribute to an operation of the semiconductor integrated circuit. The character dummies have a fixed shape and dimension, and arranged in a character pattern layer selected from the plurality of pattern layers with a fixed pitch. The dummy region further includes an identification sign formed by connecting selected ones of the character dummies chosen from the plurality of the character dummies.

Abstract: [PROBLEMS] An electrocardiogram signal processing method for extracting a fetus electrocardiogram signal included in a biopotential signal detected from an electrode attached to a mother's body.

Abstract: A method of operating a semiconductor integrated circuit including a SRAM block, in which non-volatile data is stored in the SRAM block, is disclosed. In an exemplary embodiment, the non-volatile data is stored by flowing a drain current in one of a pair of pull-down transistors constituting the SRAM cell while supplying a fixed potential to the sources of the pull-down transistors. A semiconductor integrated circuit including a SRAM block and a control circuit that controls the SRAM block to store non-volatile data is also disclosed.

Abstract: A semiconductor integrated circuit having a multilayer wiring structure is provided which includes: a top metal wiring layer (MTOP) including a plurality of top layer power supply wirings and a next-to-top metal wiring layer (MTOP-1) directly below the top metal wiring layer MTOP including a plurality of next-to-top layer power supply wirings. Each of the top layer and the next-to-top layer power supply wirings also includes first potential wirings for supplying a first potential to the circuit elements and second potential wirings for supplying a second potential to the circuit elements. The top layer power supply wirings and the next-to-top layer power supply wirings cross each other and have a top layer insulating film disposed between them. First and second contacts are provided in the insulating film for connecting the first potential wirings and second potential wirings in the top and the next-to-top metal wiring layers with each other.

Abstract: A silicon on insulator (SOI) semiconductor device includes a wire connected to doped regions formed in an active layer of a SOI substrate. A ratio of the area of the wire to the doped region or a ratio of the area of contact holes formed on the wire to the doped region is limited to a predetermined value. When the ratio exceeds the predetermined value, a dummy doped region is added to prevent the device from being damaged during a plasma process.

Abstract: A method of operating a semiconductor integrated circuit including a SRAM block, in which non-volatile data is stored in the SRAM block, is disclosed. In an exemplary embodiment, the non-volatile data is stored by flowing a drain current in one of a pair of pull-down transistors constituting the SRAM cell while supplying a fixed potential to the sources of the pull-down transistors. A semiconductor integrated circuit including a SRAM block and a control circuit that controls the SRAM block to store non-volatile data is also disclosed.

Abstract: A silicon on insulator (SOI) semiconductor device includes a wire connected to doped regions formed in an active layer of a SOl substrate. A ratio of the area of the wire to the doped region or a ratio of the area of contact holes formed on the wire to the doped region is limited to a predetermined value. When the ratio exceeds the predetermined value, a dummy doped region is added to prevent the device from being damaged during a plasma process.

Abstract: A silicon on insulator (SOI) semiconductor device includes a wire connected to doped regions formed in an active layer of a SOI substrate. A ratio of the area of the wire to the doped region or a ratio of the area of contact holes formed on the wire to the doped region is limited to a predetermined value. When the ratio exceeds the predetermined value, a dummy doped region is added to prevent the device from being damaged during a plasma process.